公开(公告)号：US06440844B1

公开(公告)日：2002-08-27

申请号：US09111799

申请日：1998-07-08

申请人： Hideo Takagi ,  Kiyoshi Izumi ,  Wataru Futo ,  Satoshi Otsuka ,  Shigetaka Uji ,  Masataka Hoshino ,  Yukihiro Satoh ,  Koji Endo ,  Yuzuru Ohta ,  Nobuhiro Misawa

发明人： Hideo Takagi ,  Kiyoshi Izumi ,  Wataru Futo ,  Satoshi Otsuka ,  Shigetaka Uji ,  Masataka Hoshino ,  Yukihiro Satoh ,  Koji Endo ,  Yuzuru Ohta ,  Nobuhiro Misawa

IPC分类号： H01L214763

CPC分类号： H01L21/7684 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76835 ,  H01L21/76882 ,  H01L23/5226 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： The method of manufacturing a semiconductor device includes the steps of forming copper wiring; reducing an oxide film on the surface of the copper wiring by heating the copper wiring to a temperature in a range of 250° C.-450° C. under reductive gas or by treating the copper wiring in plasma of reductive gas; and then forming a film of a material not containing oxygen on the copper wiring without exposing the copper wiring to external atmosphere, and can provide a semiconductor device with good copper wiring.

摘要翻译： 制造半导体器件的方法包括形成铜布线的步骤; 通过在还原性气体下将铜布线加热到250℃-450℃的温度，或者通过处理还原气体的等离子体中的铜布线来减少铜布线表面上的氧化膜; 然后在铜布线上形成不含氧的材料的膜，而不将铜布线暴露于外部大气，并且可以提供具有良好铜布线的半导体器件。

公开(公告)号：US06373136B1

公开(公告)日：2002-04-16

申请号：US09735478

申请日：2000-12-14

申请人： Satoshi Otsuka ,  Akira Yamanoue

发明人： Satoshi Otsuka ,  Akira Yamanoue

IPC分类号： H01L2348

摘要： A damascene wiring structure having: a lower wiring structure; an interlayer insulating film covering the lower wiring structure; a wiring trench formed in the interlayer insulating film from an upper surface thereof, and a via hole passing through the interlayer insulating film from a lower surface of the wiring trench in an inner area thereof and reaching the lower wiring structure, the via hole having a diameter smaller than a width of the wiring trench; an insulating pillar pattern projecting upward from the lower surface of the wiring trench in an area outside of the via hole, the insulating pillar pattern being made of a same material as the interlayer insulating film, wherein a first occupied area factor of the insulating pillar pattern in a first area of the wiring trench near said via hole is higher than a second occupied area factor of the insulating pillar pattern in a second area of the wiring trench remote from the via hole; and a dual damascene wiring formed by filling the wiring trench and said via hole with conductive material. A damascene wiring structure having a high reliability and a semiconductor device having such a damascene wiring structure can be formed.

公开(公告)号：US5978350A

公开(公告)日：1999-11-02

申请号：US632428

申请日：1996-11-12

申请人： Minoru Tobita ,  Goro Fujita ,  Satoshi Otsuka ,  Tamotsu Yamagami

发明人： Minoru Tobita ,  Goro Fujita ,  Satoshi Otsuka ,  Tamotsu Yamagami

IPC分类号： G11B7/007 ,  G11B11/105 ,  G11B13/04 ,  G11B19/02 ,  G11B19/12 ,  G11B19/28 ,  G11B20/12 ,  G11B21/08 ,  G11B27/19 ,  G11B27/30 ,  G11B27/32 ,  G11B7/24

CPC分类号： G11B27/329 ,  G11B11/10565 ,  G11B11/10578 ,  G11B11/10595 ,  G11B13/04 ,  G11B19/02 ,  G11B19/12 ,  G11B19/28 ,  G11B20/1258 ,  G11B21/083 ,  G11B27/19 ,  G11B27/3027 ,  G11B7/00745 ,  G11B11/10597 ,  G11B2020/1232 ,  G11B2020/1265 ,  G11B2020/1267 ,  G11B2020/1285 ,  G11B2020/1287 ,  G11B2220/20 ,  G11B2220/218 ,  G11B2220/2525 ,  G11B2220/2537

摘要： An optical disk having a plurality of substantially concentric tracks, each of which includes a plurality of segments each comprising a servo area ARs provided with servo pits for giving servo information to a disk drive and a data area ARd. Identification marks SGM, ADM, STM1, STM2 are recorded in the servo area ARs. The identification marks SGM, ADM, STM1, STM2 provide information for identifying the respective segments depending on the recording position in the servo area ARs.

摘要翻译： PCT No.PCT / JP95 / 01682 Sec。 371日期：1996年11月12日 102（e）日期1996年11月12日PCT 1995年8月24日PCT PCT。 公开号WO96 / 06433 日期1996年2月29日具有多个基本上同心的轨道的光盘，​​每个光盘包括多个段，每个段包括具有用于向盘驱动器和数据区ARd提供伺服信息的伺服坑的伺服区AR。 识别标记SGM，ADM，STM1，STM2记录在伺服区AR中。 识别标记SGM，ADM，STM1，STM2根据伺服区域AR中的记录位置提供用于识别各个段的信息。

公开(公告)号：US5461603A

公开(公告)日：1995-10-24

申请号：US230111

申请日：1994-04-20

申请人： Satoshi Otsuka

发明人： Satoshi Otsuka

IPC分类号： G11B7/004 ,  G11B7/13

CPC分类号： G11B7/004

摘要： An apparatus which includes a recording or reproducing unit for recording or reproducing data on or from a disc, a data transmission/reception unit for transmitting playback data reproduced by the recording and reproducing unit from the disc to an external computer and receiving recording data supplied from the computer for supplying the received recording data to the recording and reproducing unit, a system controller for receiving a command supplied from the computer for controlling the data receiving unit, a temperature sensor for detecting the temperature within a main body of the disc recording and reproducing apparatus, and a recording/playback controller for controlling the operation of the recording and reproducing unit responsive to the command supplied from the computer via the system controller and a detection output of the temperature sensor. The recording/playback controller initially decides, when a command is supplied via the system controller from the computer, whether or not the temperature within the main body of the apparatus is outside a pre-set temperature range and inhibits the recording or reproducing operation when the temperature is outside the pre-set temperature range before starting the recording or reproducing operation. Further, if, during recording or reproducing it is detected that the temperature is outside of the pre-set temperature range, the recording/playback controller terminates the recording or reproducing operation after first recording or reproducing a pre-set amount of the recording or playback data, respectively, conforming to the command from the computer.

摘要翻译： 一种装置，包括用于在盘上记录或再现数据的记录或再现单元，数据发送/接收单元，用于将由记录和再现单元再现的重放数据从盘传送到外部计算机，并且接收从 用于将接收到的记录数据提供给记录和再现单元的计算机，用于接收从计算机提供的用于控制数据接收单元的命令的系统控制器，用于检测盘记录和再现的主体内的温度的温度传感器 装置和记录/重放控制器，用于响应于从计算机经由系统控制器提供的命令和温度传感器的检测输出来控制记录和再现单元的操作。 当通过系统控制器从计算机提供命令时，记录/重放控制器最初确定装置的主体内的温度是否在预设的温度范围之外，并且当 在开始记录或再现操作之前，温度超出预设温度范围。 此外，如果在记录或再现期间检测到温度超出预设温度范围，则记录/重放控制器在首次记录或再现预定量的记录或回放之后终止记录或再现操作 数据分别符合计算机的命令。

公开(公告)号：US08937007B2

公开(公告)日：2015-01-20

申请号：US13398254

申请日：2012-02-16

申请人： Kenichi Watanabe ,  Nobuhiro Misawa ,  Satoshi Otsuka

发明人： Kenichi Watanabe ,  Nobuhiro Misawa ,  Satoshi Otsuka

IPC分类号： H01L21/44 ,  H01L21/4763 ,  H01L21/311 ,  H01L23/00 ,  H01L23/31

CPC分类号： H01L23/562 ,  H01L23/3192 ,  H01L23/564 ,  H01L24/05 ,  H01L2224/02166 ,  H01L2224/05567 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2224/05552

摘要： A method of manufacturing a semiconductor device, including: forming a moisture resistant ring surrounding a multilayer interconnection structure in a layered body formed of stacked layers of a plurality of interlayer insulating films lower in dielectric constant than a SiO2 film and including the multilayer interconnection structure; forming a groove in the layered body between the moisture resistant ring and a scribe line, the groove reaching a surface of a semiconductor substrate; forming a film including Si and C as principal components and covering sidewall surfaces and a bottom surface of the groove; and forming a protection film on the film along the sidewall surfaces and the bottom surface of the groove.

摘要翻译： 一种制造半导体器件的方法，包括：在由SiO 2膜介电常数低于介电常数的多个层间绝缘膜的叠层形成的层叠体中形成包围多层互连结构的防潮环，并且包括所述多层互连结构; 在所述层叠体之间在所述防潮环和划线之间形成凹槽，所述凹槽到达半导体衬底的表面; 形成包括Si和C作为主要成分并覆盖所述槽的侧壁表面和底表面的膜; 以及沿着所述凹槽的侧壁表面和所述底表面在所述膜上形成保护膜。

公开(公告)号：US08271135B2

公开(公告)日：2012-09-18

申请号：US12910945

申请日：2010-10-25

申请人： Keiji Shioda ,  Satoshi Otsuka ,  Masaaki Ueda ,  Kazuhito Nakanishi

发明人： Keiji Shioda ,  Satoshi Otsuka ,  Masaaki Ueda ,  Kazuhito Nakanishi

IPC分类号： G05B19/04 ,  G05B19/18

CPC分类号： A61B34/75 ,  A61B34/74 ,  A61B90/50 ,  A61B2017/00367 ,  A61B2090/0801

摘要： An apparatus for holding a medical device has an arm unit equipped with, for example, a polyarticular arm, which holds the medical device such as endoscope movably in the space. Additionally to a determination unit and a controller, the holding apparatus has an operation unit equipped with a plurality of operation members with which an operator's operation causes the arm unit to be moved spatially. The determination unit determines whether or not operator's operations at the plurality of operation members corresponds to an improper state deviating from a properly operated state in which at least two predetermined operation members have been operated within a predetermined period of time which is set to measure simultaneity for operations. If it is determined that the operation is in the improper state, the controller prohibits the arm unit from moving. As long as the operation is proper, the arm unit can be moved.

摘要翻译： 用于保持医疗装置的装置具有装备有例如多关节臂的手臂单元，其将诸如内窥镜的医疗装置可移动地保持在该空间中。 除了确定单元和控制器之外，保持装置具有操作单元，该操作单元配备有操作者的操作使得臂单元在空间上移动的多个操作构件。 确定单元确定多个操作构件中的操作者的操作是否对应于在预定时间段内已经操作了至少两个预定操作构件的适当操作状态偏离的不正确状态，该预定时间段被设置为测量同时性 操作。 如果确定操作处于不正常状态，则控制器禁止臂单元移动。 只要操作正确，可以移动手臂单元。

公开(公告)号：US20120149190A1

公开(公告)日：2012-06-14

申请号：US13398254

申请日：2012-02-16

申请人： Kenichi Watanabe ,  Nobuhiro Misawa ,  Satoshi Otsuka

发明人： Kenichi Watanabe ,  Nobuhiro Misawa ,  Satoshi Otsuka

IPC分类号： H01L21/768

CPC分类号： H01L23/562 ,  H01L23/3192 ,  H01L23/564 ,  H01L24/05 ,  H01L2224/02166 ,  H01L2224/05567 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2224/05552

摘要： A method of manufacturing a semiconductor device, including: forming a moisture resistant ring surrounding a multilayer interconnection structure in a layered body formed of stacked layers of a plurality of interlayer insulating films lower in dielectric constant than a SiO2 film and including the multilayer interconnection structure; forming a groove in the layered body between the moisture resistant ring and a scribe line, the groove reaching a surface of a semiconductor substrate; forming a film including Si and C as principal components and covering sidewall surfaces and a bottom surface of the groove; and forming a protection film on the film along the sidewall surfaces and the bottom surface of the groove.

摘要翻译： 一种制造半导体器件的方法，包括：在由SiO 2膜介电常数低于介电常数的多个层间绝缘膜的叠层形成的层叠体中形成包围多层互连结构的防潮环，并且包括所述多层互连结构; 在所述层叠体之间在所述防潮环和划线之间形成凹槽，所述凹槽到达半导体衬底的表面; 形成包括Si和C作为主要成分并覆盖所述槽的侧壁表面和底表面的膜; 以及沿着所述凹槽的侧壁表面和所述底表面在所述膜上形成保护膜。

公开(公告)号：US20120089155A1

公开(公告)日：2012-04-12

申请号：US13329936

申请日：2011-12-19

申请人： Satoshi Otsuka ,  Toru Shinmura ,  Kenji Omachi

发明人： Satoshi Otsuka ,  Toru Shinmura ,  Kenji Omachi

IPC分类号： A61B19/00

CPC分类号： F16M11/2078 ,  A61B1/00149 ,  A61B90/50 ,  A61B2017/00535 ,  F16C11/106 ,  F16C2316/10 ,  F16M11/14 ,  F16M11/18 ,  F16M2200/041 ,  F16M2200/044

摘要： A surgery equipment holding device including a holder for holding surgical equipment, a bar connected to the holder, a brake which operatively engages the bar for stopping movement of the bar, and a pair of switches for switching being an active state and an inactive state of the brake. The surgery equipment holding device is characterized in the operation thereof at the time of disengaging the fixation state, and exhibits excellent operability.

摘要翻译： 一种手术设备保持装置，包括用于保持手术设备的保持器，连接到保持器的杆，可操作地接合杆的制动器，用于停止杆的移动;以及一对开关，用于切换为活动状态和非活动状态 刹车。 手术装置保持装置的特征在于在脱离固定状态时的操作，并且表现出优异的可操作性。

公开(公告)号：US08143153B2

公开(公告)日：2012-03-27

申请号：US13075463

申请日：2011-03-30

申请人： Kenichi Watanabe ,  Nobuhiro Misawa ,  Satoshi Otsuka

发明人： Kenichi Watanabe ,  Nobuhiro Misawa ,  Satoshi Otsuka

IPC分类号： H01L21/44 ,  H01L21/4763 ,  H01L21/311

CPC分类号： H01L23/562 ,  H01L23/3192 ,  H01L23/564 ,  H01L24/05 ,  H01L2224/02166 ,  H01L2224/05567 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2224/05552

摘要： A method of manufacturing a semiconductor device, including: forming a moisture resistant ring surrounding a multilayer interconnection structure in a layered body formed of stacked layers of a plurality of interlayer insulating films lower in dielectric constant than a SiO2 film and including the multilayer interconnection structure; forming a groove in the layered body between the moisture resistant ring and a scribe line, the groove reaching a surface of a semiconductor substrate; forming a film including Si and C as principal components and covering sidewall surfaces and a bottom surface of the groove; and forming a protection film on the film along the sidewall surfaces and the bottom surface of the groove.

摘要翻译： 一种制造半导体器件的方法，包括：在由SiO 2膜介电常数低于介电常数的多个层间绝缘膜的叠层形成的层叠体中形成包围多层互连结构的防潮环，并且包括所述多层互连结构; 在所述层叠体之间在所述防潮环和划线之间形成凹槽，所述凹槽到达半导体衬底的表面; 形成包括Si和C作为主要成分并覆盖所述槽的侧壁表面和底表面的膜; 以及沿着所述凹槽的侧壁表面和所述底表面在所述膜上形成保护膜。

公开(公告)号：US20100069824A1

公开(公告)日：2010-03-18

申请号：US12461758

申请日：2009-08-24

申请人： Yoshiharu Okamoto ,  Saburo Minami ,  Yoshimitsu Abiko ,  Satoshi Otsuka ,  Nobuhiko Ogawa ,  Masaru Matsui

发明人： Yoshiharu Okamoto ,  Saburo Minami ,  Yoshimitsu Abiko ,  Satoshi Otsuka ,  Nobuhiko Ogawa ,  Masaru Matsui

IPC分类号： A61M37/00

CPC分类号： A61N5/062 ,  A61K31/404 ,  A61K41/0052 ,  A61N2005/0644 ,  A61N2005/0659

摘要： A photodynamic hyperthermic chemotherapy of cancer comprising topically injecting a photosensitive dye agent, specifically indocyanine green, in the form of an acidic liquid formulation to a tumor or cancer tissue, or a surgically removed site thereof of a patient, and irradiating the tissue or site with light having such an output wavelength that the photosensitive dye agent absorbs the light and generates heat; and an apparatus and a system for photodynamic hyperthermic chemotherapy of cancer comprising a light source and a probe having a light introducing portion capable of topically irradiating a tumor or cancer tissue or a surgically removed site thereof of a patient with light derived from the light source by a continuous wave or a pulse wave at an output wavelength of 600 to 1600 nm and an output of 5000 mW or more.

摘要翻译： 癌症的光动力学高热化学疗法包括将酸性液体制剂形式的光敏染料，特别是吲哚菁绿局部注射到患者的肿瘤或癌组织或其外科手术移除的部位，并将组织或部位用 具有光敏染料剂吸收光并产生热量的输出波长的光; 以及用于癌症的光动力学高热化疗的装置和系统，包括光源和探针，所述探针具有能够通过光源衍生的光局部照射患者的肿瘤或癌组织或手术切除部位的光引入部分， 输出波长为600〜1600nm的连续波或脉波，输出为5000mW以上。