公开(公告)号：US20100069824A1

公开(公告)日：2010-03-18

申请号：US12461758

申请日：2009-08-24

申请人： Yoshiharu Okamoto ,  Saburo Minami ,  Yoshimitsu Abiko ,  Satoshi Otsuka ,  Nobuhiko Ogawa ,  Masaru Matsui

发明人： Yoshiharu Okamoto ,  Saburo Minami ,  Yoshimitsu Abiko ,  Satoshi Otsuka ,  Nobuhiko Ogawa ,  Masaru Matsui

IPC分类号： A61M37/00

CPC分类号： A61N5/062 ,  A61K31/404 ,  A61K41/0052 ,  A61N2005/0644 ,  A61N2005/0659

摘要： A photodynamic hyperthermic chemotherapy of cancer comprising topically injecting a photosensitive dye agent, specifically indocyanine green, in the form of an acidic liquid formulation to a tumor or cancer tissue, or a surgically removed site thereof of a patient, and irradiating the tissue or site with light having such an output wavelength that the photosensitive dye agent absorbs the light and generates heat; and an apparatus and a system for photodynamic hyperthermic chemotherapy of cancer comprising a light source and a probe having a light introducing portion capable of topically irradiating a tumor or cancer tissue or a surgically removed site thereof of a patient with light derived from the light source by a continuous wave or a pulse wave at an output wavelength of 600 to 1600 nm and an output of 5000 mW or more.

摘要翻译： 癌症的光动力学高热化学疗法包括将酸性液体制剂形式的光敏染料，特别是吲哚菁绿局部注射到患者的肿瘤或癌组织或其外科手术移除的部位，并将组织或部位用 具有光敏染料剂吸收光并产生热量的输出波长的光; 以及用于癌症的光动力学高热化疗的装置和系统，包括光源和探针，所述探针具有能够通过光源衍生的光局部照射患者的肿瘤或癌组织或手术切除部位的光引入部分， 输出波长为600〜1600nm的连续波或脉波，输出为5000mW以上。

公开(公告)号：US08513776B2

公开(公告)日：2013-08-20

申请号：US11200126

申请日：2005-08-10

申请人： Satoshi Otsuka

发明人： Satoshi Otsuka

IPC分类号： H01L23/544

CPC分类号： H01L21/78 ,  H01L21/76801 ,  H01L21/76808 ,  H01L21/76819 ,  H01L21/76838 ,  H01L23/522 ,  H01L23/585 ,  H01L24/03 ,  H01L24/05 ,  H01L2224/02166 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05093 ,  H01L2224/05554 ,  H01L2224/05567 ,  H01L2224/05624 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/01002 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/01021 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/0105 ,  H01L2924/01059 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/05042 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2224/05552

摘要： A semiconductor device comprising scribe areas that include dicing areas for separating chip areas, a groove forming area surrounding each chip area, and includes interlayer insulating lamination disposed above the semiconductor wafer; a multilayer wiring structure formed in the interlayer insulating lamination, the multilayer wiring structure including wiring layers disposed in the chip area, and dummy wirings disposed in the chip area and the scribe area, the wiring layers and the dummy wirings being formed from same mother layers; a cover layer including a passivation layer, the cover layer covering the multilayer wiring structure; and a groove formed in each groove forming area, the groove surrounding the chip areas and extending from a surface of the semiconductor wafer and at least through the passivation layer; wherein the multilayer wiring structure includes no dummy wirings in the groove forming area at least in an uppermost wiring layer.

摘要翻译： 一种半导体器件，包括划片区域，其包括用于分离芯片区域的切割区域，围绕每个芯片区域的沟槽形成区域，并且包括设置在半导体晶片上方的层间绝缘层叠体; 在所述层间绝缘层叠体中形成的多层布线结构体，所述多层布线结构体包括设置在所述芯片区域中的布线层，以及布置在所述芯片区域和划线区域中的虚拟布线，所述布线层和所述虚拟布线由相同的母层形成 ; 包括钝化层的覆盖层，所述覆盖层覆盖所述多层布线结构; 以及形成在每个槽形成区域中的槽，所述槽围绕所述芯片区域并且从所述半导体晶片的表面延伸并且至少穿过所述钝化层; 其中所述多层布线结构在所述沟槽形成区域中至少在最上层布线层中不包括虚拟布线。

公开(公告)号：US20130113883A1

公开(公告)日：2013-05-09

申请号：US13699770

申请日：2011-03-28

申请人： Takashi Kanemaru ,  Satoshi Otsuka ,  Sadao Tsuruga

发明人： Takashi Kanemaru ,  Satoshi Otsuka ,  Sadao Tsuruga

IPC分类号： H04N13/00

CPC分类号： H04N13/139 ,  G09G3/20 ,  H04N13/178 ,  H04N13/183 ,  H04N13/194 ,  H04N13/356 ,  H04N2213/007

摘要： In order to prevent abnormal video output at the time of switching between a 2D program and a 3D program in a digital broadcasting receiving device, disclosed is a receiving device provided with a receiving unit for receiving a program content including video information, and identification information including information for identifying whether the program content is a 2D program content or a 3D program content, and an output unit for outputting the received program content in a 2D format or a 3D format. The output unit outputs a display for giving notice of switching when switching from the 2D video program content to the 3D video program content is detected by the identification information received by the receiving unit.

摘要翻译： 为了防止在数字广播接收装置中的2D节目和3D节目之间切换时的异常视频输出，公开了一种接收装置，其具有接收单元，用于接收包括视频信息的节目内容，以及包括 用于识别节目内容是2D节目内容还是3D节目内容的信息，以及用于以2D格式或3D格式输出接收的节目内容的输出单元。 当从2D视频节目内容切换到3D视频节目内容时，由接收单元接收到的识别信息检测出输出单元输出用于发出切换的通知的显示。

公开(公告)号：US20120113220A1

公开(公告)日：2012-05-10

申请号：US13277249

申请日：2011-10-20

申请人： Satoshi Otsuka ,  Sadao Tsuruga

发明人： Satoshi Otsuka ,  Sadao Tsuruga

IPC分类号： H04N13/00

CPC分类号： H04N21/84 ,  H04N13/139 ,  H04N13/156 ,  H04N13/161 ,  H04N13/178 ,  H04N13/341 ,  H04N13/356 ,  H04N13/398 ,  H04N19/597 ,  H04N21/4345 ,  H04N21/44 ,  H04N21/485 ,  H04N21/4882 ,  H04N21/816 ,  H04N2213/007

摘要： In order to effectively determine 3D video from the video information, improve the user convenience while avoiding the risk of erroneous determination due to unconditional 3D switching, and reduce process load due to unconditional determination of the video, a 3D determination method based on video information is performed by means of a plurality of resources such as the correlation information of the video. At this time, it is determined whether the video signal is 3D video or 2D video according to the time and conditions set for the determination. Then, the video output is switched between 2D video and 3D video based on the determination result. Or a message is displayed to check if the user enables or disables 3D switching before the video is switched. Or, the conditions for the video determination are limited.

摘要翻译： 为了有效地从视频信息中确定3D视频，提高用户便利性，同时避免由于无条件3D切换引起的错误确定的风险，并且由于视频的无条件确定而减少处理负荷，基于视频信息的3D确定方法 通过诸如视频的相关信息的多个资源来执行。 此时，根据为确定设定的时间和条件确定视频信号是3D视频还是2D视频。 然后，基于确定结果，在2D视频和3D视频之间切换视频输出。 或者显示一条消息，以检查用户是否在切换视频之前启用或禁用3D切换。 或者，视频确定的条件是有限的。

公开(公告)号：US20110177672A1

公开(公告)日：2011-07-21

申请号：US13075463

申请日：2011-03-30

申请人： Kenichi Watanabe ,  Nobuhiro Misawa ,  Satoshi Otsuka

发明人： Kenichi Watanabe ,  Nobuhiro Misawa ,  Satoshi Otsuka

IPC分类号： H01L21/762

CPC分类号： H01L23/562 ,  H01L23/3192 ,  H01L23/564 ,  H01L24/05 ,  H01L2224/02166 ,  H01L2224/05567 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2224/05552

摘要： A method of manufacturing a semiconductor device, including: forming a moisture resistant ring surrounding a multilayer interconnection structure in a layered body formed of stacked layers of a plurality of interlayer insulating films lower in dielectric constant than a SiO2 film and including the multilayer interconnection structure; forming a groove in the layered body between the moisture resistant ring and a scribe line, the groove reaching a surface of a semiconductor substrate; forming a film including Si and C as principal components and covering sidewall surfaces and a bottom surface of the groove; and forming a protection film on the film along the sidewall surfaces and the bottom surface of the groove.

摘要翻译： 一种制造半导体器件的方法，包括：在由SiO 2膜介电常数低于介电常数的多个层间绝缘膜的叠层形成的层叠体中形成包围多层互连结构的防潮环，并且包括所述多层互连结构; 在所述层叠体之间在所述防潮环和划线之间形成凹槽，所述凹槽到达半导体衬底的表面; 形成包括Si和C作为主要成分并覆盖所述槽的侧壁表面和底表面的膜; 以及沿着所述凹槽的侧壁表面和所述底表面在所述膜上形成保护膜。

公开(公告)号：US07728418B2

公开(公告)日：2010-06-01

申请号：US11777669

申请日：2007-07-13

申请人： Hiroshi Nomura ,  Satoshi Otsuka ,  Yoshihiro Takao

发明人： Hiroshi Nomura ,  Satoshi Otsuka ,  Yoshihiro Takao

IPC分类号： H01L23/02

CPC分类号： H01L23/564 ,  H01L23/522 ,  H01L23/585 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device includes a plurality of chips comprising a plurality of first moisture-proof rings individually surrounding said plurality of chips, a second moisture-proof ring surrounding the entire plurality of chips, and a wire for connecting said plurality of chips to each other.

摘要翻译： 半导体器件包括多个芯片，其包括分别包围所述多个芯片的多个第一防潮环，围绕整个多个芯片的第二防潮环和用于将所述多个芯片彼此连接的导线。

公开(公告)号：US07309311B2

公开(公告)日：2007-12-18

申请号：US10850660

申请日：2004-05-21

申请人： Satoshi Otsuka ,  Toru Shinmura ,  Tomoaki Yamashita ,  Kenji Hirose ,  Hisao Isobe ,  Masaaki Ueda

发明人： Satoshi Otsuka ,  Toru Shinmura ,  Tomoaki Yamashita ,  Kenji Hirose ,  Hisao Isobe ,  Masaaki Ueda

IPC分类号： A61B1/04

CPC分类号： A61B1/00188 ,  A61B1/00149 ,  A61B1/042

摘要： An endoscope is connected optically removably to a TV camera through an adapter. A plurality of fixing pins is arranged on both sides of an insertion axis of an insertion part of the endoscope. A fixing unit to fix the endoscope removably is provided at the front end of an arm unit of an endoscope holder which supports the endoscope movably. The fixing unit has a claw and a movable claw, and grips the fixing pins of the endoscope releasably between the claw and the movable claw.

摘要翻译： 内窥镜通过适配器可旋转地连接到电视摄像机。 在内窥镜的插入部的插入轴的两侧配置有多个固定销。 可拆卸地固定内窥镜的固定单元设置在可移动地支撑内窥镜的内窥镜支架的臂单元的前端。 固定单元具有爪和可动爪，并将内窥镜的固定销可释放地夹在爪和可动爪之间。

公开(公告)号：US20070281465A1

公开(公告)日：2007-12-06

申请号：US11808165

申请日：2007-06-07

申请人： Satoshi Otsuka

发明人： Satoshi Otsuka

IPC分类号： H01L21/3205

CPC分类号： H01L24/05 ,  H01L21/76808 ,  H01L21/76829 ,  H01L21/76838 ,  H01L23/53238 ,  H01L23/53295 ,  H01L24/03 ,  H01L2224/02166 ,  H01L2224/05093 ,  H01L2224/05096 ,  H01L2224/05556 ,  H01L2224/05567 ,  H01L2224/05624 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/05042 ,  H01L2924/13091 ,  H01L2924/30105 ,  H01L2924/00 ,  H01L2224/05552

摘要： The semiconductor device comprises a lower interconnection part 12 which is formed on a silicon substrate 10 and includes an inter-layer insulation film 36 formed of a low-k film 32 and a hydrophilic insulation film 34 formed on the low-k film 32, and an interconnection layer 44a, 44b buried in interconnection trenches 38a, 38b formed in the inter-layer insulation film 36 and having an interconnection pitch which is a first pitch; and an intermediate interconnection part 14 which is formed on the lower interconnection part 12 and includes an inter-layer insulation film 142 formed of low-k films 136, 140, an interconnection layer 152a, 152b buried in interconnection trenches 146a, 146b formed in the inter-layer insulation film 142 and having an interconnection pitch which is a second pitch larger than the first pitch, and an SiC film 154 formed directly on the low-k film 140 and the interconnection layer 152a, 152b.

摘要翻译： 半导体器件包括下部互连部分12，其形成在硅衬底10上并且包括由低k膜32和形成在低k膜32上的亲水性绝缘膜34形成的层间绝缘膜36，以及 埋入在层间绝缘膜36中形成的互连沟槽38a，38b中并且具有作为第一间距的互连间距的互连层44a，44b; 以及形成在下互连部分12上并包括由低k膜136,140形成的层间绝缘膜142，埋在互连沟146a，146中的互连层152a，152b的中间互连部分14 b形成在层间绝缘膜142中，并且具有大于第一间距的第二间距的互连间距，以及直接形成在低k膜140和互连层152a，152b上的SiC膜154。

公开(公告)号：US20050132411A1

公开(公告)日：2005-06-16

申请号：US10951649

申请日：2004-09-29

申请人： Satoshi Otsuka ,  Katsuro Matsuzaki ,  Yasushi Tsuruta ,  Kumiko Tokita

发明人： Satoshi Otsuka ,  Katsuro Matsuzaki ,  Yasushi Tsuruta ,  Kumiko Tokita

IPC分类号： H04N5/76 ,  H04N7/173 ,  H04N17/00 ,  H04N7/16 ,  H04N5/91

CPC分类号： H04N21/42661 ,  H04N7/17318 ,  H04N21/2543 ,  H04N21/4334 ,  H04N21/443 ,  H04N21/4532 ,  H04N21/84

摘要： Disclosed is an information providing system for providing information on content recording. The system includes: a network communicating unit for communication via a network; and an information distributing unit for distributing the information on content recording via the network.

摘要翻译： 公开了一种用于提供关于内容记录的信息的信息提供系统。 该系统包括：网络通信单元，用于经由网络进行通信; 以及信息分发单元，用于经由网络分发关于内容记录的信息。

公开(公告)号：US20050093160A1

公开(公告)日：2005-05-05

申请号：US10816955

申请日：2004-04-05

申请人： Satoshi Otsuka

发明人： Satoshi Otsuka

IPC分类号： H01L21/768 ,  H01L23/053 ,  H01L23/485 ,  H01L23/532

CPC分类号： H01L24/05 ,  H01L21/76808 ,  H01L21/76829 ,  H01L21/76838 ,  H01L23/53238 ,  H01L23/53295 ,  H01L24/03 ,  H01L2224/02166 ,  H01L2224/05093 ,  H01L2224/05096 ,  H01L2224/05556 ,  H01L2224/05567 ,  H01L2224/05624 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/05042 ,  H01L2924/13091 ,  H01L2924/30105 ,  H01L2924/00 ,  H01L2224/05552

摘要： The semiconductor device comprises a lower interconnection part 12 which is formed on a silicon substrate 10 and includes an inter-layer insulation film 36 formed of a low-k film 32and a hydrophilic insulation film 34 formed on the low-k film 32, and an interconnection layer 44a, 44b buried in interconnection trenches 38a, 38b formed in the inter-layer insulation film 36 and having an interconnection pitch which is a first pitch; and an intermediate interconnection part 14 which is formed on the lower interconnection part 12 and includes an inter-layer insulation film 142 formed of low-k films 136, 140, an interconnection layer 152a, 152b buried in interconnection trenches 146a, 146b formed in the inter-layer insulation film 142 and having an interconnection pitch which is a second pitch larger than the first pitch, and an SiC film 154 formed directly on the low-k film 140 and the interconnection layer 152a, 152b.

摘要翻译： 半导体器件包括下部互连部分12，其形成在硅衬底10上并且包括由低k膜32和形成在低k膜32上的亲水性绝缘膜34形成的层间绝缘膜36，以及 埋入在层间绝缘膜36中形成的互连沟槽38a，38b中并且具有作为第一间距的互连间距的互连层44a，44b; 以及形成在下互连部分12上并包括由低k膜136,140形成的层间绝缘膜142，埋在互连沟146a，146中的互连层152a，152b的中间互连部分14 b形成在层间绝缘膜142中，并且具有大于第一间距的第二间距的互连间距，以及直接形成在低k膜140和互连层152a，152b上的SiC膜154。