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    Mask etch plasma reactor with variable process gas distribution
    21.
    发明申请
    Mask etch plasma reactor with variable process gas distribution 有权
    具有可变工艺气体分布的掩模蚀刻等离子体反应器

    公开(公告)号：US20080102202A1

    公开(公告)日：2008-05-01

    申请号：US11589426

    申请日：2006-10-30

    申请人： Madhavi R. Chandrachood ,  Michael N. Grimbergen ,  Khiem K. Nguyen ,  Richard Lewington ,  Ibrahim M. Ibrahim ,  Sheeba J. Panayil ,  Ajay Kumar

    发明人： Madhavi R. Chandrachood ,  Michael N. Grimbergen ,  Khiem K. Nguyen ,  Richard Lewington ,  Ibrahim M. Ibrahim ,  Sheeba J. Panayil ,  Ajay Kumar

    IPC分类号： C23C16/00 ,  H05H1/24

    CPC分类号： H01J37/32082 ,  H01J37/321 ,  H01J37/3244 ,  H01J37/32449

    摘要： A plasma reactor for processing a workpiece such as a mask or wafer includes a vacuum chamber having a cylindrical side wall, a ceiling overlying the side wall and a ring supported on a top edge of the side wall and supporting the ceiling, the ring comprising an external surface and an interior surface. An RF plasma source power applicator and an RF source power generator coupled to the applicator furnish plasma source power. Plural passages extend in a radial direction through the ring from the external surface to the interior surface and are spaced apart along a circumference of the ring. A process gas supply furnishes process gas. An external gas flow conduit apparatus outside of the chamber extends around a circumference of the chamber and is coupled to the process gas supply. Plural external gas flow valves outside of the chamber are coupled to the external conduit at respective locations spaced apart along the conduit, each of the valves having: (a) a controlled gas output port coupled to a respective one of the plural passages at the external surface of the ring and (b) a valve control input. A gas valve configuration controller controls the valve control input of each of the valves.

    摘要翻译： 用于处理诸如掩模或晶片的工件的等离子体反应器包括具有圆柱形侧壁，覆盖侧壁的天花板和支撑在侧壁的顶部边缘上并支撑天花板的环的真空室，所述环包括 外表面和内表面。 耦合到施加器的RF等离子体源功率施加器和RF源功率发生器提供等离子体源功率。 多个通道沿径向延伸穿过环从外表面到内表面并沿环的圆周间隔开。 工艺气体供应提供工艺气体。 在室外部的外部气体流动导管装置围绕室的圆周延伸并且联接到工艺气体供应。 在室外部的多个外部气体流量阀沿着导管间隔开的相应位置联接到外部导管，每个阀具有：（a）在外部连接到多个通道中的相应一个的受控气体输出端口 环的表面和（b）阀控制输入。 气阀配置控制器控制每个阀的阀门控制输入。

    Endpoint detection for semiconductor processes
    23.
    发明授权
    Endpoint detection for semiconductor processes 失效
    半导体工艺的端点检测

    公开(公告)号：US6081334A

    公开(公告)日：2000-06-27

    申请号：US62520

    申请日：1998-04-17

    申请人： Michael N. Grimbergen ,  Thorsten B. Lill

    发明人： Michael N. Grimbergen ,  Thorsten B. Lill

    IPC分类号： G01B11/06 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/3213 ,  H01L21/66 ,  G01B9/02

    CPC分类号： H01L22/26 ,  G01B11/0683 ,  H01L21/32137

    摘要： A substrate 20 in a process chamber 42 is processed at process conditions suitable for processing a layer 30 on the substrate 20, the process conditions comprising one or more of process gas composition and flow rates, power levels of process gas energizers, process gas pressure, and substrate temperature. The intensity of a reflected light beam 78 reflected from the layer 30 on the substrate 20 is measured over time, to determine a measured waveform pattern. The measured waveform pattern is compared to a pretetermined characteristic waveform pattern, and when the two waveform patterns are similar or substantially the same, the process conditions are changed to change a rate of processing or a process selectivity ratio of the layer 30 on the substrate 20 before the entire layer 30 is completely processed.

    摘要翻译： 处理室42中的衬底20在适于处理衬底20上的层30的工艺条件下进行处理，工艺条件包括工艺气体组成和流速中的一种或多种，​​工艺气体激发器的功率水平，工艺气体压力， 和基板温度。 在时间上测量从衬底20上的层30反射的反射光束78的强度，以确定测量的波形图案。 将测量的波形图案与预定特征波形图案进行比较，并且当两个波形图案相似或基本相同时，改变处理条件以改变基板20上的层30的处理速率或处理选择比率 在整个层30被完全处理之前。

    METHODS FOR REDUCING PHOTORESIST INTERFERENCE WHEN MONITORING A TARGET LAYER IN A PLASMA PROCESS
    26.
    发明申请
    METHODS FOR REDUCING PHOTORESIST INTERFERENCE WHEN MONITORING A TARGET LAYER IN A PLASMA PROCESS 有权
    在等离子体过程中监测目标层时减少光电干扰的方法

    公开(公告)号：US20120103936A1

    公开(公告)日：2012-05-03

    申请号：US13281989

    申请日：2011-10-26

    申请人： Michael N. Grimbergen

    发明人： Michael N. Grimbergen

    IPC分类号： B05C11/00

    CPC分类号： H01L22/26 ,  H01J37/32963 ,  H01J37/32972 ,  H01L21/67253 ,  H01L22/12

    摘要： A method and apparatus for monitoring a target layer in a plasma process having a photoresist layer is provided. The method is useful in removing noise associated with the photoresist layer, and is particularly useful when signals associated with the target layer is weak, such as when detecting an endpoint for a photomask etching process.

    摘要翻译： 提供了一种用于在具有光刻胶层的等离子体工艺中监测目标层的方法和装置。 该方法可用于去除与光致抗蚀剂层相关的噪声，并且当与目标层相关的信号较弱时，例如当检测光掩模蚀刻工艺的端点时，该方法特别有用。

    Process for etching a transparent workpiece including backside endpoint detection steps
    27.
    发明授权
    Process for etching a transparent workpiece including backside endpoint detection steps 有权
    用于蚀刻透明工件的工艺，包括背面端点检测步骤

    公开(公告)号：US08012366B2

    公开(公告)日：2011-09-06

    申请号：US11589652

    申请日：2006-10-30

    申请人： Richard Lewington ,  Michael N. Grimbergen ,  Khiem K. Nguyen ,  Darin Bivens ,  Madhavi R. Chandrachood ,  Ajay Kumar

    发明人： Richard Lewington ,  Michael N. Grimbergen ,  Khiem K. Nguyen ,  Darin Bivens ,  Madhavi R. Chandrachood ,  Ajay Kumar

    IPC分类号： G01R31/00

    CPC分类号： G03F1/80 ,  H01J37/32963

    摘要： A method is provided for defining a pattern on a workpiece such as a transparent substrate or mask or a workpiece that is at least transparent within a range of optical wavelengths. The method includes defining a photoresist pattern on the top surface of the mask, the pattern including a periodic structure having a periodic spacing between elements of the structure. The method further includes placing the mask on a support pedestal in a plasma reactor chamber and generating a plasma in the chamber to etch the top surface of the mask through openings in the photoresist pattern. The method also includes transmitting light through the pedestal and through the bottom surface of the mask, while viewing through the support pedestal light reflected from the periodic structure and detecting an interference pattern in the reflected light. The method further includes determining from the interference pattern a depth to which periodic structure has been etched in the top surface.

    摘要翻译： 提供了一种用于在诸如透明基板或掩模或在光波长范围内至少透明的工件的工件上限定图案的方法。 该方法包括在掩模的顶表面上限定光致抗蚀剂图案，该图案包括在该结构的元件之间具有周期性间隔的周期性结构。 该方法还包括将掩模放置在等离子体反应器室中的支撑基座上并在腔室中产生等离子体，以通过光致抗蚀剂图案中的开口蚀刻掩模的顶表面。 该方法还包括通过基座传送光并通过掩模的底表面，同时通过从周期性结构反射的支撑基座光线观察并检测反射光中的干涉图案。 该方法还包括从干涉图案确定在顶表面中蚀刻了周期结构的深度。