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    Quinazoline derivatives having tyrosine kinase inhibitory activity
    21.
    发明授权
    Quinazoline derivatives having tyrosine kinase inhibitory activity 有权
    具有酪氨酸激酶抑制活性的喹唑啉衍生物

    公开(公告)号：US08202879B2

    公开(公告)日：2012-06-19

    申请号：US11884819

    申请日：2006-02-22

    申请人： Masaharu Kume ,  Kenji Matsuo ,  Naoki Omori ,  Masami Takayama

    发明人： Masaharu Kume ,  Kenji Matsuo ,  Naoki Omori ,  Masami Takayama

    IPC分类号： A01N43/54 ,  A61K31/517 ,  C07D239/72

    CPC分类号： C07D239/94 ,  C07D401/12 ,  C07D401/14 ,  C07D405/06 ,  C07D405/12 ,  C07D407/12 ,  C07D417/12

    摘要： A compound which inhibits both of EGF receptor tyrosine kinase and HER2 tyrosine kinase is provided.A compound represented by the general formula (I): wherein RX is a group represented by the formula: wherein R1 is a hydrogen atom, optionally substituted alkyl, etc.; Z is —O—, —N(R10)—, etc.; R10 is a hydrogen atom, alkyl, etc.; R2 is a hydrogen atom, optionally substituted alkyl, etc.; R18 is a hydrogen atom, optionally substituted alkyl, etc.; R19 is optionally substituted alkyl, etc.; W1 is an optionally substituted non-aromatic nitrogen-containing group; R17 is a hydrogen atom, optionally substituted alkyl, etc.; R3 and R4 are independently a hydrogen atom, optionally substituted alkyl, etc.; X is —O—, —S—, or —N(R12)—, etc.; R12 is a hydrogen atom, alkyl, etc.; and A is phenyl optionally having a substituent, etc., its pharmaceutically acceptable salt, or a solvate thereof.

    摘要翻译： 提供抑制EGF受体酪氨酸激酶和HER2酪氨酸激酶两者的化合物。 由通式（I）表示的化合物：其中RX是由下式表示的基团：其中R1是氢原子，任选取代的烷基等; Z是-O - ， - N（R 10） - 等; R10是氢原子，烷基等; R2是氢原子，任选取代的烷基等; R18是氢原子，任意取代的烷基等; R19是任选取代的烷基等; W1是任选取代的非芳族含氮基团; R 17是氢原子，任选取代的烷基等; R3和R4独立地是氢原子，任选取代的烷基等; X是-O-，-S-或-N（R 12） - 等; R12是氢原子，烷基等; 和A是任选具有取代基的苯基等，其药学上可接受的盐或其溶剂合物。

    Run flat pneumatic tire with shoulder cushion rubber layer loss tangent less than carcass coating rubber loss tangent
    23.
    发明授权
    Run flat pneumatic tire with shoulder cushion rubber layer loss tangent less than carcass coating rubber loss tangent 失效
    运行平坦充气轮胎与肩垫橡胶层损耗切线小于胎体涂层橡胶损耗角正切

    公开(公告)号：US07195046B2

    公开(公告)日：2007-03-27

    申请号：US11057185

    申请日：2005-02-15

    申请人： Kazuomi Kobayashi ,  Tomohisa Nishikawa ,  Kenji Matsuo ,  Hiroki Sawada

    发明人： Kazuomi Kobayashi ,  Tomohisa Nishikawa ,  Kenji Matsuo ,  Hiroki Sawada

    IPC分类号： B60C15/00 ,  B60C17/00 ,  B60C17/04

    CPC分类号： B60C9/08 ,  B60C9/18 ,  B60C15/0072 ,  B60C17/0009 ,  B60C17/0018 ,  B60C2009/1842 ,  Y10T152/10855

    摘要： There is provided a pneumatic tire having an aspect ratio of not less than 60 and considerably improving run flat durability as compared with the conventional type of the run flat tire, wherein at least one cushion rubber layer having a loss tangent lower than a loss tangent (tan δ) of a coating rubber for cords of a carcass ply is arranged between an end portion of a belt and a reinforcing rubber layer in a shoulder region and between mutually adjacent tire constitutional members. And also, when the carcass is comprised of plural plies, at least one ply is separated off in a zone beneath the belt, whereby the ride comfort against vibrations can be more improved.

    摘要翻译： 提供了一种具有不小于60的纵横比的充气轮胎，与传统类型的跑式轮胎相比，具有显着改善跑步平面耐久性的充气轮胎，其中至少一个缓冲橡胶层的损耗角正切低于损耗角正切（ 胎体帘布层帘线用涂布橡胶的三角形（tanδ）布置在肩部区域中的带的端部和增强橡胶层之间以及相邻的轮胎结构构件之间。 此外，当胎体由多层构成时，至少一层在皮带下方的区域中被分离，从而可以更好地改善对振动的乘坐舒适性。

    Run flat pneumatic tire with shoulder cushion rubber layer loss tangent less than carcass coating rubber loss tangent
    24.
    发明申请
    Run flat pneumatic tire with shoulder cushion rubber layer loss tangent less than carcass coating rubber loss tangent 失效
    运行平坦充气轮胎与肩垫橡胶层损耗切线小于胎体涂层橡胶损耗角正切

    公开(公告)号：US20050133136A1

    公开(公告)日：2005-06-23

    申请号：US11057185

    申请日：2005-02-15

    申请人： Kazuomi Kobayashi ,  Tomohisa Nishikawa ,  Kenji Matsuo ,  Hiroki Sawada

    发明人： Kazuomi Kobayashi ,  Tomohisa Nishikawa ,  Kenji Matsuo ,  Hiroki Sawada

    IPC分类号： B60C9/02 ,  B60C9/18 ,  B60C15/00 ,  B60C17/00

    CPC分类号： B60C9/08 ,  B60C9/18 ,  B60C15/0072 ,  B60C17/0009 ,  B60C17/0018 ,  B60C2009/1842 ,  Y10T152/10855

    摘要： There is provided a pneumatic tire having an aspect ratio of not less than 60 and considerably improving run flat durability as compared with the conventional type of the run flat tire, wherein at least one cushion rubber layer having a loss tangent lower than a loss tangent (tan δ) of a coating rubber for cords of a carcass ply is arranged between an end portion of a belt and a reinforcing rubber layer in a shoulder region and between mutually adjacent tire constitutional members. And also, when the carcass is comprised of plural plies, at least one ply is separated off in a zone beneath the belt, whereby the ride comfort against vibrations can be more improved.

    摘要翻译： 提供了一种具有不小于60的纵横比的充气轮胎，与传统类型的跑式轮胎相比，具有显着改善跑步平面耐久性的充气轮胎，其中至少一个缓冲橡胶层的损耗角正切低于损耗角正切（ 胎体帘布层帘线用涂布橡胶的三角形（tanδ）布置在肩部区域中的带的端部和增强橡胶层之间以及相邻的轮胎结构构件之间。 此外，当胎体由多层构成时，至少一层在皮带下方的区域中被分离，从而可以更好地改善对振动的乘坐舒适性。

    Analog switch device having threshold change reducing means
    28.
    发明授权
    Analog switch device having threshold change reducing means 失效
    具有阈值变化减小装置的模拟开关装置

    公开(公告)号：US4529897A

    公开(公告)日：1985-07-16

    申请号：US398356

    申请日：1982-07-15

    申请人： Yasoji Suzuki ,  Kenji Matsuo ,  Akira Yamaguchi

    发明人： Yasoji Suzuki ,  Kenji Matsuo ,  Akira Yamaguchi

    IPC分类号： H03K17/687 ,  H03K3/01

    CPC分类号： H03K17/6872 ,  H03K2217/0018

    摘要： An analog switch device has p- and n-channel metal oxide semiconductor field effect transistors, each having a source electrode, a drain electrode, a gate electrode and a substrate electrode. The p- and n-channel metal oxide semiconductor field effect transistors are connected parallel to each other. First and second analog signals are received and produced at a pair of nodes between the p- and n-channel metal oxide semiconductor field effect transistors. Control signals which are inverted with each other are respectively supplied to the gate electrodes of the p- and n-channel metal oxide semiconductor field effect transistors. A voltage buffer circuit is provided for applying a predetermined voltage to the substrate electrode of one of the p- and n-channel metal oxide semiconductor field effect transistors so as to decrease a change in a threshold voltage due to the source-substrate bias effect.

    摘要翻译： 模拟开关装置具有p沟道金属氧化物半导体场效应晶体管和n沟道金属氧化物半导体场效应晶体管，每个具有源电极，漏电极，栅电极和衬底电极。 p沟道和n沟道金属氧化物半导体场效应晶体管彼此并联连接。 第一和第二模拟信号在p沟道金属氧化物半导体场效应晶体管和n沟道金属氧化物半导体场效应晶体管之间的一对节点处被接收和产生。 彼此反转的控制信号分别提供给p沟道金属氧化物半导体场效应晶体管和n沟道金属氧化物半导体场效应晶体管的栅电极。 提供电压缓冲电路，用于向p沟道金属氧化物半导体场效应晶体管和n沟道金属氧化物半导体场效应晶体管之一的衬底电极施加预定电压，以便减小由于源极 - 衬底偏置效应引起的阈值电压的变化。

    Complementary IGFET Schmitt trigger logic circuit having a variable bias voltage logic gate section
    29.
    发明授权
    Complementary IGFET Schmitt trigger logic circuit having a variable bias voltage logic gate section 失效
    具有可变偏置电压逻辑门极部分的互补IGFET施密特触发逻辑电路

    公开(公告)号：US4464587A

    公开(公告)日：1984-08-07

    申请号：US295825

    申请日：1981-08-24

    申请人： Yasoji Suzuki ,  Kenji Matsuo

    发明人： Yasoji Suzuki ,  Kenji Matsuo

    IPC分类号： H03K3/3565 ,  H03K3/037 ,  H03K3/356 ,  H03K19/094

    CPC分类号： H03K3/3565

    摘要： A logic gate section of a Schmitt trigger circuit has first and second nodes to which variable bias voltages are applied. A first bias control IGFET is connected between the first node and a first potential terminal. A second bias control IGFET is connected between the first node and a second potential terminal. A third bias control IGFET is connected between the second node and the first potential terminal. A fourth bias control IGFET is connected between the second node and the second potential terminal. A control signal to the gates of the first and fourth bias control IGFET's is provided by the Schmitt trigger input signal and the control signal to each of the gates of the third and fourth bias control IGFET's is provided by the Schmitt trigger feedback connection of two series-connected inverters.

    摘要翻译： 施密特触发电路的逻辑门极部分具有施加可变偏置电压的第一和第二节点。 第一偏置控制IGFET连接在第一节点和第一电位端子之间。 第一偏置控制IGFET连接在第一节点和第二电位端子之间。 第三偏置控制IGFET连接在第二节点和第一电位端子之间。 第四偏置控制IGFET连接在第二节点和第二电位端子之间。 通过施密特触发输入信号提供到第一和第四偏置控制IGFET的栅极的控制信号，并且通过两个串联的施密特触发器反馈连接提供到第三和第四偏置控制IGFET的每个栅极的控制信号 连接的逆变器。

    MOS Integrated logic circuit device with improved switching speed characteristics
    30.
    发明授权
    MOS Integrated logic circuit device with improved switching speed characteristics 失效
    MOS集成逻辑电路器件具有改进的开关速度特性

    公开(公告)号：US4389582A

    公开(公告)日：1983-06-21

    申请号：US116556

    申请日：1980-01-29

    申请人： Yasoji Suzuki ,  Kenji Matsuo

    发明人： Yasoji Suzuki ,  Kenji Matsuo

    IPC分类号： H03K19/017 ,  H03K19/096 ,  H03K19/20

    CPC分类号： H03K19/01728 ,  H03K19/0963

    摘要： A semiconductor integrated circuit device, which comprises:transistors constituting a plurality of series-connected logic circuits, wherein some of the mutually-facing or paired transistors of every two adjacent series-connected logic circuits or at least one pair thereof are so connected as to span said two adjacent circuits with a common gate provided between said paired transistors;conductors for connecting the source electrodes and/or the drain electrodes of said spanning paired transistors; anda plurality of signal generators for supplying required signals to the respective transistors, and whereby a MOS type logic circuit constructed by arranging those of the transistors which are supplied with a synchronizing signal closer to the output terminal than those of the transistors which are supplied with an input signal can be accelerated in operation.

    摘要翻译： 一种半导体集成电路器件，包括：构成多个串联逻辑电路的晶体管，其中每两个相邻的串联逻辑电路中的一些相互面对或成对的晶体管或至少一对串联的逻辑电路中的至少一对与 跨越所述两个相邻电路，其中设置在所述成对晶体管之间的公共栅极; 用于连接所述跨越成对晶体管的源电极和/或漏电极的导体; 以及多个信号发生器，用于向各个晶体管提供所需的信号，并且由此通过将提供有比同时提供的同步信号的晶体管的晶体管的晶体管的晶体管的晶体管的晶体管的晶体管的晶体管的晶体管的晶体管 可以在操作中加速输入信号。