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    Integrated Circuitry Comprising A Memory Array Comprising Strings Of Memory Cells And Methods Used In Forming A Memory Array Comprising Strings Of Memory Cells
    23.
    发明申请
    Integrated Circuitry Comprising A Memory Array Comprising Strings Of Memory Cells And Methods Used In Forming A Memory Array Comprising Strings Of Memory Cells 有权

    公开(公告)号：US20220068959A1

    公开(公告)日：2022-03-03

    申请号：US17068430

    申请日：2020-10-12

    Applicant: Micron Technology, Inc.

    Inventor： Daniel Billingsley ,  Jordan D. Greenlee ,  John D. Hopkins ,  Yongjun Jeff Hu ,  Swapnil Lengade

    IPC: H01L27/11582 ,  H01L27/11556 ,  H01L21/311

    Abstract: A method used in forming a memory array comprising strings of memory cells comprises forming an upper stack directly above a lower stack. The lower stack comprises vertically-alternating lower-first-tiers and lower-second-tiers. The upper stack comprises vertically-alternating upper-first-tiers and upper-second-tiers. Lower channel openings extend through the lower-first-tiers and the lowers-second-tiers. The lower channel openings have sacrificial material therein. An upper of the lower-first-tiers or a lower of the upper-first-tiers comprises non-stoichiometric silicon nitride comprising (a) or (b), where (a): a nitrogen-to-silicon atomic ratio greater than 1.33 and less than 1.5; and (b): a nitrogen-to-silicon atomic ratio greater than or equal to 1.0 and less than 1.33. A higher of the upper-first-tiers that is above said lower upper-first-tier comprises silicon nitride not having either the (a) or the (b). Upper channel openings are etched through the upper-first-tiers and the upper-second-tiers to stop on said upper lower-first-tier or said lower upper-first-tier. After the stop, the sacrificial material is removed from the lower channel openings and form channel-material strings in the upper and lower channel openings. Other embodiments, including structure independent of method, are disclosed.

    PHASE CHANGE MEMORY STACK WITH TREATED SIDEWALLS
    26.
    发明申请
    PHASE CHANGE MEMORY STACK WITH TREATED SIDEWALLS 审中-公开

    公开(公告)号：US20190355902A1

    公开(公告)日：2019-11-21

    申请号：US16266777

    申请日：2019-02-04

    Applicant: Micron Technology, Inc.

    Inventor： Tsz W. Chan ,  Yongjun Jeff Hu ,  Swapnil Lengade ,  Shu Qin ,  Everett Allen McTeer

    IPC: H01L45/00 ,  H01L27/24 ,  G11C13/00

    Abstract: Memory devices and methods for fabricating memory devices have been disclosed. One such method includes forming the memory stack out of a plurality of elements. An adhesion species is formed on at least one sidewall of the memory stack wherein the adhesion species has a gradient structure that results in the adhesion species intermixing with an element of the memory stack to terminate unsatisfied atomic bonds of the element. The gradient structure further comprises a film of the adhesion species on an outer surface of the at least one sidewall. A dielectric material is implanted into the film of the adhesion species to form a sidewall liner.

    Memory cells and methods of forming memory cells
    29.
    发明授权
    Memory cells and methods of forming memory cells 有权
    记忆细胞和形成记忆细胞的方法

    公开(公告)号：US09324945B2

    公开(公告)日：2016-04-26

    申请号：US13959958

    申请日：2013-08-06

    Applicant: Micron Technology, Inc.

    Inventor： Lequn Jennifer Liu ,  Stephen W. Russell ,  Fabio Pellizzer ,  Swapnil Lengade

    IPC: H01L45/00 ,  H01L27/24

    CPC classification number: H01L45/165 ,  H01L27/2427 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/144 ,  H01L45/1675

    Abstract: A method of forming a memory cell includes forming an outer electrode material elevationally over and directly against a programmable material. The programmable material and the outer electrode material contact one another along an interface. Protective material is formed elevationally over the outer electrode material. Dopant is implanted through the protective material into the outer electrode material and the programmable material and across the interface to enhance adhesion of the outer electrode material and the programmable material relative one another across the interface. Memory cells are also disclosed.

    Abstract translation: 一种形成存储单元的方法包括在外部电极材料上形成并且直接抵靠可编程材料。 可编程材料和外部电极材料沿着界面彼此接触。 保护材料在外部电极材料上垂直地形成。 通过保护材料将掺杂剂注入到外部电极材料和可编程材料中并跨越界面，以增强外部电极材料和可编程材料相对于界面的粘合性。 还公开了存储单元。

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