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176 条记录 (耗时 0.026 秒)

    Crosslinkable polysilane compositions and cured products thereof
    21.
    发明授权
    Crosslinkable polysilane compositions and cured products thereof 失效
    可交联聚硅烷组合物及其固化产物

    公开(公告)号：US5384382A

    公开(公告)日：1995-01-24

    申请号：US96273

    申请日：1993-07-26

    申请人： Shigeru Mori ,  Eiichi Tabei ,  Hisashi Umehara

    发明人： Shigeru Mori ,  Eiichi Tabei ,  Hisashi Umehara

    IPC分类号： C08L83/14 ,  C08G77/08

    CPC分类号： C08L83/14

    摘要： Crosslinkable polysilane compositions contain (1) an alkenylsiloxy--terminated polysilane and a compound having at least three hydrosilyl groups in a molecule, (2) a hydro--siloxy--terminated polysilane and a compound having at least three alkenyl groups in a molecule, (3) a hydro--terminated polysilane and a compound having at least three alkenyl groups in a molecule, or (4) an alkenyl--terminated polysilane and a compound having at least three hydrosilyl groups in a molecule. By effecting hydrosilylation reaction between the components in the presence of a hydrosilylation catalyst, a tough crosslinked film is obtained without causing scission of a polysilane chain.

    摘要翻译： 可交联聚硅烷组合物含有（1）分子内具有至少三个氢化甲硅烷基的烯基甲硅烷氧基封端的聚硅烷和具有至少三个氢化甲硅烷基的化合物，（2）分子中具有至少三个烯基的水 - 甲硅烷氧基封端的聚硅烷和（3） ）加氢封端的聚硅烷和分子中具有至少三个烯基的化合物，或（4）分子内具有至少三个氢化甲硅烷基的烯基封端的聚硅烷和化合物。 通过在氢化硅烷化催化剂的存在下进行组分之间的氢化硅烷化反应，获得坚韧的交联膜而不引起聚硅烷链断裂。

    Dynamic semiconductor memory device having separate read and write data bases
    22.
    发明授权
    Dynamic semiconductor memory device having separate read and write data bases 失效
    具有分离的读和写数据库的动态半导体存储器件

    公开(公告)号：US5323349A

    公开(公告)日：1994-06-21

    申请号：US936454

    申请日：1992-08-28

    申请人： Kei Hamade ,  Shigeru Mori

    发明人： Kei Hamade ,  Shigeru Mori

    IPC分类号： G11C11/409 ,  G11C7/10 ,  G11C11/401 ,  G11C11/4096 ,  G11C11/416 ,  H01L21/8242 ,  H01L27/108 ,  G11C7/00 ,  G11C11/40

    CPC分类号： G11C7/1048 ,  G11C11/4096

    摘要： Separated IO type dynamic memory device includes a write data bus for transmitting data to be written into a selected memory cell and a read data bus for transferring data read out from a selected memory cell. The write data bus and the read data bus are separately provided from each other. The memory device further includes a load circuit for supplying a current flow to the read data bus and for precharging the read data bus to a predetermined potential, and drive circuits provided for each pair of bit lines each connecting memory cells of a column for driving the read data bus to a potential corresponding to potentials appearing on an associated pair of bit lines in response to a column select signal. The memory device further includes an insulated gate type transistor inserted on the read data bus between the loading circuit and the driving circuits and receives a predetermined intermediate potential at the gate. An output node for supplying an output data is provided between the insulated gate type transistor and the load circuit. This enables fast discharging of the read data bus at the output node, resulting in a high speed data reading operation.

    摘要翻译： 分离式IO型动态存储装置包括用于发送要写入所选存储单元的数据的写数据总线和用于传送从所选存储单元读出的数据的读数据总线。 写数据总线和读数据总线彼此分开设置。 存储装置还包括用于将电流提供给读数据总线并用于将读数据总线预充电到预定电位的负载电路，以及为每对连接列驱动的列的存储单元而设置的驱动电路 响应于列选择信号将数据总线读取到对应于出现在相关联的位线对上的电位的电位。 存储器件还包括插入在读取数据总线上的负载电路和驱动电路之间的绝缘栅型晶体管，并在栅极处接收预定的中间电位。 在绝缘栅型晶体管和负载电路之间设置用于提供输出数据的输出节点。 这使得能够在输出节点处读取数据总线的快速放电，导致高速数据读取操作。

    Input protective apparatus of semiconductor device
    24.
    发明授权
    Input protective apparatus of semiconductor device 失效
    半导体器件输入保护装置

    公开(公告)号：US5019883A

    公开(公告)日：1991-05-28

    申请号：US443864

    申请日：1989-11-30

    申请人： Shigeru Mori ,  Michihiro Yamada ,  Hideshi Miyatake ,  Shuji Murakami

    发明人： Shigeru Mori ,  Michihiro Yamada ,  Hideshi Miyatake ,  Shuji Murakami

    IPC分类号： H01L29/78 ,  H01L21/8234 ,  H01L23/64 ,  H01L27/02 ,  H01L27/06 ,  H01L27/088 ,  H02H7/20

    CPC分类号： H02H7/20 ,  H01L23/647 ,  H01L27/0251 ,  H01L2924/0002 ,  H01L2924/3011

    摘要： An input protective apparatus for a semiconductor device (Q3) comprises an MOS transistor (Q4) having a thick gate insulating film formed therein. The MOS transistor (Q4) has one active layer connected to an input terminal (11) through a second resistor element (R2) and connected to a semiconductor device (Q3) to be protected through a first resistor element (R1), and an other active layer connected to a ground terminal. The input protective apparatus is adapted such that a resistance value R.sub.1 of a first resistor element (R1) and a resistance value R.sub.2 of the second resistor element (R2) satisfy the relation R.sub.1 >R.sub.2, and the on-resistance R.sub.3 of the MOS transistor (Q4) and the resistance value R.sub.2 satisfy the relation R.sub.3

    摘要翻译： 一种用于半导体器件（Q3）的输入保护装置包括其中形成有厚栅极绝缘膜的MOS晶体管（Q4）。 MOS晶体管（Q4）具有通过第二电阻元件（R2）连接到输入端子（11）并且连接到半导体器件（Q3）的一个有源层，以通过第一电阻元件（R1）被保护，另一个 有源层连接到接地端子。 输入保护装置适于使得第一电阻元件（R1）的电阻值R1和第二电阻元件（R2）的电阻值R2满足关系R1> R2，并且MOS晶体管的导通电阻R3 （Q4），电阻值R2满足R3 << R2的关系。

    Glass fiber article-coating compositions
    25.
    发明授权
    Glass fiber article-coating compositions 失效
    玻璃纤维制品涂料组合物

    公开(公告)号：US4868063A

    公开(公告)日：1989-09-19

    申请号：US076230

    申请日：1987-07-22

    申请人： yoshio Okamura ,  Kimitaka Kumagae ,  Hideyuki Itoh ,  Shigeru Mori

    发明人： yoshio Okamura ,  Kimitaka Kumagae ,  Hideyuki Itoh ,  Shigeru Mori

    IPC分类号： C03C25/10 ,  C03C25/40 ,  C09D183/04 ,  D06M15/643 ,  D06M101/00

    CPC分类号： C03C25/40 ,  C09D183/04 ,  Y10T428/31612

    摘要： A composition for coating glass fiber articles such as glass sleeve, glass cloth, glass roving, glass tape, glass mat or glass nonwoven fiber, comprising(a) a diorganopolysiloxane end-blocked with a divinylmonoorganosilyl or trivinylsilyl radical at both ends,(b) a sufficient amount of an organohydrogenpolysiloxane containing at least two silicon-bonded hydrogen atoms per molecule to provide at least 0.5 silicon-bonded hydrogen atoms per vinyl radical in component (a), and(c) a catalytic amount of platinum or a platinum compound.

    摘要翻译： （a）在二端用二乙烯基单有机甲硅烷基或三乙烯基硅烷基封端的二有机聚硅氧烷，（b）二乙烯基单有机甲硅烷基或三乙烯基硅烷基封端的二有机聚硅氧烷， 每分子含有至少两个与硅键合的氢原子的足量的有机氢聚硅氧烷，以在组分（a）中每个乙烯基提供至少0.5个与硅键合的氢原子，和（c）催化量的铂或铂化合物。

    Semiconductor device, semiconductor device manufacturing method, liquid crystal display device and electronic apparatus
    29.
    发明授权
    Semiconductor device, semiconductor device manufacturing method, liquid crystal display device and electronic apparatus 有权
    半导体器件，半导体器件制造方法，液晶显示器件和电子设备

    公开(公告)号：US08570455B2

    公开(公告)日：2013-10-29

    申请号：US12934659

    申请日：2009-03-30

    申请人： Shigeru Mori ,  Isao Shouji ,  Hiroshi Tanabe

    发明人： Shigeru Mori ,  Isao Shouji ,  Hiroshi Tanabe

    IPC分类号： G02F1/136 ,  H01L21/336 ,  H01L21/62 ,  H01L29/66

    CPC分类号： H01L29/78621 ,  G02F2001/13685 ,  H01L21/26506 ,  H01L21/26513

    摘要： A semiconductor device includes a supporting substrate; a semiconductor film on the supporting substrate; a gate insulating film on the semiconductor film; a gate electrode on the gate insulating film; and a source region and a drain region formed by introducing impurity elements to the semiconductor film. The thickness of the semiconductor film is within the range of 20 nm to 40 nm. Low-concentration regions are provided between the source region and a channel forming region, and between the drain region and the channel forming region, respectively. The low-concentration regions each have an impurity concentration smaller than that of the source region and that of the drain region, and the impurity concentration in a lower surface side region on the side of the supporting substrate is smaller than that of an upper surface side region on the opposite side.

    摘要翻译： 半导体器件包括支撑衬底; 支撑基板上的半导体膜; 半导体膜上的栅极绝缘膜; 栅极绝缘膜上的栅电极; 以及通过将杂质元素引入半导体膜形成的源区和漏区。 半导体膜的厚度在20nm〜40nm的范围内。 在源极区域和沟道形成区域之间以及漏极区域和沟道形成区域之间分别设置有低浓度区域。 低浓度区域的杂质浓度比源极区域和漏极区域的杂质浓度小，并且在支撑衬底侧的下表面侧区域中的杂质浓度小于上表面侧的杂质浓度 对面的区域

    Method of manufacturing a semiconductor device with a front-end insulating layer interposed between a semiconductor layer and an insulating substrate
    30.
    发明授权
    Method of manufacturing a semiconductor device with a front-end insulating layer interposed between a semiconductor layer and an insulating substrate 有权
    制造半导体器件的方法，该半导体器件具有介于半导体层和绝缘衬底之间的前端绝缘层

    公开(公告)号：US08431447B2

    公开(公告)日：2013-04-30

    申请号：US13291450

    申请日：2011-11-08

    申请人： Shigeru Mori

    发明人： Shigeru Mori

    IPC分类号： H01L21/76

    CPC分类号： H01L23/28 ,  H01L21/02365 ,  H01L29/02 ,  H01L29/66757 ,  H01L29/78 ,  H01L29/78603 ,  H01L29/78606 ,  H01L29/78696 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A semiconductor device in which a semiconductor layer is formed on an insulating substrate with a front-end insulating layer interposed between the semiconductor layer and the insulating substrate is provided which is capable of preventing action of an impurity contained in the insulating substrate on the semiconductor layer and of improving reliability of the semiconductor device. In a TFT (Thin Film Transistor), boron is made to be contained in a region located about 100 nm or less apart from a surface of the insulating substrate so that boron concentration decreases at an average rate being about 1/1000-fold per 1 nm from the surface of the insulating substrate toward the semiconductor layer.

    摘要翻译： 提供一种半导体器件，其中半导体层形成在绝缘基板上，其中插入在半导体层和绝缘基板之间的前端绝缘层，其能够防止绝缘基板中包含的杂质对半导体层的作用 并提高半导体器件的可靠性。 在TFT（薄膜晶体管）中，使硼被包含在距离绝缘基板的表面约100nm以下的区域中，使得硼浓度以平均速率降低约1/1000倍/ 1 从绝缘基板的表面朝向半导体层。