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公开(公告)号：US20230299726A1
公开(公告)日：2023-09-21
申请号：US18166369
申请日：2023-02-08
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Satoshi Goto , Masayuki Aoike , Takayuki Tsutsui , Kenji Sasaki
CPC classification number: H03F3/195 , H01L23/66 , H03F1/0288 , H03F1/565 , H03F3/245 , H01L2223/6611 , H01L2223/6655 , H03F2200/451
Abstract: A semiconductor device includes first and second members. A second surface of the second member is opposite to a first surface of the first member. A radio-frequency amplifier circuit is included in the second member. The first and second members are bonded to each other by an electrically conductive bonding member between the first and second surfaces. The radio-frequency amplifier circuit includes at least one power stage transistor, an input wire that is connected to the power stage transistor and supplies an input signal to the power stage transistor, and an input-side circuit element that is connected to the input wire and that includes at least one of a passive element, an active element, and an external connection terminal. The bonding member includes a first conductor pattern covering the power stage transistor in plan view. The input-side circuit element is disposed outside the first conductor pattern in plan view.
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公开(公告)号：US11302659B2
公开(公告)日：2022-04-12
申请号：US17038895
申请日：2020-09-30
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Hisanori Namie , Satoshi Goto , Satoshi Tanaka
IPC: H03F3/191 , H01L23/66 , H01L23/00 , H03F3/195 , H03F1/56 , H03F3/213 , H01L27/06 , H01L29/735 , H01L29/73
Abstract: A semiconductor device includes a semiconductor substrate, a transistor, and a first harmonic termination circuit. The transistor is formed at the semiconductor substrate. The transistor amplifies an input signal supplied to an input end and outputs an amplified signal through an output end. The first harmonic termination circuit attenuates a harmonic component included in the amplified signal. The first harmonic termination circuit is formed at the semiconductor substrate such that one end of the first harmonic termination circuit is connected to the output end of the transistor and the other end of the first harmonic termination circuit is connected to a ground end of the transistor.
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公开(公告)号：US11114989B2
公开(公告)日：2021-09-07
申请号：US16694025
申请日：2019-11-25
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Satoshi Goto , Hideyuki Satou , Satoshi Tanaka
Abstract: A power amplifying circuit includes an amplifier that amplifies a radio-frequency signal and a bypass capacitor section connected to a power supply terminal for supplying a power supply voltage to the amplifier. The bypass capacitor section includes a first capacitor, a second capacitor, and a first switch circuit. The first capacitor includes a first end connected to a power supply path, and a second end. The second capacitor includes a first end connected to the second end of the first capacitor and a second end connected to ground. The first switch circuit includes a first terminal connected to the second end of the first capacitor and the first end of the second capacitor, and a second terminal connected to the ground. The first switch circuit switches between connection and non-connection between the second end of the first capacitor and the ground.
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公开(公告)号：US10326413B2
公开(公告)日：2019-06-18
申请号：US16011803
申请日：2018-06-19
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Satoshi Goto
Abstract: A power amplification circuit that includes: a capacitor element in which a first metal layer, a first insulating layer, a second metal layer, a second insulating layer and a third metal layer are sequentially stacked, the capacitor element including a first capacitor in which the first metal layer serves as one electrode thereof and the second metal layer serves as another electrode thereof, and a second capacitor in which the second metal layer serves as one electrode thereof and the third metal layer serves as another electrode thereof; and a transistor that amplifies a radio-frequency signal. The radio-frequency signal is supplied to the one electrode of the first capacitor. The other electrode of the first capacitor and the one electrode of the second capacitor are connected to a base of the transistor, and the other electrode of the second capacitor is connected to the emitter of the transistor.
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公开(公告)号：US09654075B2
公开(公告)日：2017-05-16
申请号：US15092362
申请日：2016-04-06
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Satoshi Arayashiki , Satoshi Goto
CPC classification number: H03G3/3042 , H03F1/0205 , H03F3/19 , H03F3/191 , H03F3/21 , H03F3/211 , H03F3/245 , H03F2200/18 , H03F2200/21 , H03F2200/324 , H03F2200/451 , H03F2203/21181 , H03G1/0088
Abstract: Provided is a power amplification module that includes: a first transistor, a first signal being inputted to a base thereof; a second transistor, the first signal being inputted to a base thereof and a collector thereof being connected to a collector of the first transistor; a first resistor, a first bias current being supplied to one end thereof and another end thereof being connected to the base of the first transistor; a second resistor, one end thereof being connected to the one end of the first resistor and another end thereof being connected to the base of the second transistor; and a third resistor, a second bias current being supplied to one end thereof and another end thereof being connected to the base of the second transistor.
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Patent Agency Ranking
公开(公告)号：US12184243B2
公开(公告)日：2024-12-31
申请号：US17546831
申请日：2021-12-09
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Mikiko Fukasawa , Satoshi Goto , Shunji Yoshimi , Yuji Takematsu , Mitsunori Samata
Abstract: A second member is joined in surface contact with a first surface of a first member including a semiconductor region made from an elemental semiconductor. The second member includes a radio-frequency amplifier circuit made from a compound semiconductor. A conductive protrusion projects from the second member toward a side opposite to the first member. The first member includes a temperature measurement element that detects a temperature.
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公开(公告)号：US11811368B2
公开(公告)日：2023-11-07
申请号：US17230342
申请日：2021-04-14
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Satoshi Goto , Tomoaki Sato , Hisanori Namie
CPC classification number: H03F1/565 , H03F3/195 , H03F3/245 , H03F3/72 , H03F2200/318 , H03F2200/451
Abstract: A power amplifier circuit includes a first amplification path including a first power amplifier, a second amplification path including a second power amplifier, a first switching circuit configured to electrically connect either the first amplification path or the second amplification path and a first output terminal to each other, a second switching circuit configured to electrically connect an input terminal and any one of a plurality of second output terminals to each other, and a matching circuit configured to electrically connect the first output terminal and the input terminal to each other and achieve impedance matching between the first output terminal and the input terminal.
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公开(公告)号：US11799503B2
公开(公告)日：2023-10-24
申请号：US17546764
申请日：2021-12-09
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Satoshi Goto , Shunji Yoshimi , Mitsunori Samata
CPC classification number: H04B1/006 , H04B1/0057 , H04B1/04 , H04B1/40
Abstract: A semiconductor device including a radio-frequency amplifier circuit and a band selection switch are mounted on or in a module substrate. An output matching circuit includes at least one passive element disposed on or in the module substrate. The output matching circuit is coupled between the radio-frequency amplifier circuit and the band selection switch. The semiconductor device includes a first member having a semiconductor portion made of an elemental semiconductor and a second member joined to the first member in surface contact with the first member. The radio-frequency amplifier circuit including a semiconductor element made of a compound semiconductor is formed at the second member. The semiconductor device is disposed in close proximity to the output matching circuit in plan view. The output matching circuit is disposed in close proximity to the band selection switch.
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公开(公告)号：US11757411B2
公开(公告)日：2023-09-12
申请号：US18147849
申请日：2022-12-29
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Satoshi Tanaka , Satoshi Arayashiki , Satoshi Goto , Yusuke Tanaka
CPC classification number: H03F1/0216 , H03F3/21 , H03F2200/451 , H04W88/02
Abstract: A power amplifier circuit includes a first transistor having an emitter electrically connected to a common potential, a base to which a first high-frequency signal is input, and a collector from which a third high-frequency signal is output; a second transistor having an emitter electrically connected to the common potential, a base to which a second high-frequency signal is input, and a collector from which a fourth high-frequency signal is output; a first capacitance circuit electrically connected between the collector of the second transistor and the base of the first transistor; and a second capacitance circuit electrically connected between the collector of the first transistor and the base of the second transistor.
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公开(公告)号：US11742337B2
公开(公告)日：2023-08-29
申请号：US18091423
申请日：2022-12-30
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Satoshi Goto , Kazuhito Nakai
IPC: H04B1/40 , H01L23/538 , H03F1/02 , H01L25/16 , H01L23/498 , H03F3/20 , H03F1/56
CPC classification number: H01L25/16 , H01L23/49811 , H01L23/49838 , H01L23/5383 , H03F1/0288 , H03F3/20 , H04B1/40 , H03F1/56 , H03F2200/222 , H03F2200/294 , H03F2200/451
Abstract: A radio-frequency module including a module substrate having a first main surface and a second main surface on opposite sides; a low-noise amplifier disposed on the second main surface; and a power amplifier circuit in a Doherty configuration. The power amplifier including a first phase circuit; a second phase circuit; a carrier amplifier disposed on the first main surface and including an input terminal connected to a first end of the first phase circuit and an output terminal connected to a first end of the second phase circuit; and a peaking amplifier disposed on the first main surface and including an input terminal connected to a second end of the first phase circuit and an output terminal connected to a second end of the second phase circuit.
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