Communication unit
    23.
    发明授权

    公开(公告)号:US10944438B2

    公开(公告)日:2021-03-09

    申请号:US16285408

    申请日:2019-02-26

    Abstract: A communication unit includes the following elements. A first transmit circuit outputs a first signal or a second signal from a first input signal. A first amplifier amplifies the first signal and outputs a first amplified signal. A first signal generating circuit generates a third signal having a frequency higher than a frequency of the second signal, based on the second signal and a first reference signal. A first filter circuit receives the third signal and allows one of a frequency component representing a sum of the frequency of the second signal and a frequency of the first reference signal and a frequency component representing a difference therebetween to pass through the first filter circuit and attenuates the other one of the frequency components. A second amplifier amplifies the third signal output from the first filter circuit and outputs a second amplified signal.

    Power amplifier circuit
    24.
    发明授权

    公开(公告)号:US10855235B2

    公开(公告)日:2020-12-01

    申请号:US16227189

    申请日:2018-12-20

    Abstract: A power amplifier circuit amplifies a radio-frequency signal in a transmit frequency band. The power amplifier circuit includes an amplifier, a bias circuit, and an impedance circuit. The amplifier amplifies power of a radio-frequency signal and outputs an amplified signal. The impedance circuit is connected between a signal input terminal of the amplifier and a bias-current output terminal of the bias circuit and has frequency characteristics in which attenuation is obtained in the transmit frequency band. The impedance circuit includes first and second impedance circuits. The first impedance circuit is connected to the signal input terminal. The second impedance circuit is connected between the first impedance circuit and the bias-current output terminal.

    SEMICONDUCTOR DEVICE
    25.
    发明申请

    公开(公告)号:US20190058054A1

    公开(公告)日:2019-02-21

    申请号:US16058123

    申请日:2018-08-08

    Abstract: On a single-crystal semiconductor substrate with an upper surface including a first direction in which an inverted mesa step extends and a second direction in which a forward mesa step extends in response to anisotropic etching in which an etching rate depends on crystal plane orientation, a bipolar transistor including a collector layer, a base layer, and an emitter layer that are epitaxially grown, and a base wire connected to the base layer are arranged. A step is provided at an edge of the base layer, and the base wire is extended from inside to outside of the base layer in a direction intersecting the first direction in a plan view. An intersection of the edge of the base layer and the base wire has a disconnection prevention structure that makes it difficult for step-caused disconnection of the base wire to occur.

    Antenna device and communication device

    公开(公告)号:US12244072B2

    公开(公告)日:2025-03-04

    申请号:US17672696

    申请日:2022-02-16

    Abstract: An antenna device comprises a substrate including a planar first region and a planar second region; at least one first radiating element, arranged in the first region, that communicates a radio wave of a first frequency; and at least one second radiating element, arranged in the second region, that communicates a radio wave of a second frequency. A separation direction is a direction of a straight line connecting a first geometric center position of the at least one first radiating element and a second geometric center position of the at least one second radiating element, and in a case that the second region is viewed along a normal direction of the second region, an angle formed by the separation direction and a polarization direction of the at least one second radiating element is equal to or greater than 45° and equal to or less than 90°.

    Power amplifier circuit
    29.
    发明授权

    公开(公告)号:US11817837B2

    公开(公告)日:2023-11-14

    申请号:US17129041

    申请日:2020-12-21

    Abstract: A power amplifier circuit has an input node from which an input signal, which is a high-frequency signal, is inputted and an output node to which the input signal is amplified by a differential amplifier circuit to be outputted as an output signal. The power amplifier circuit includes a balun transformer (second balun transformer) including an input-side winding that has a substantially center to which a power-supply voltage is supplied and that is connected between differential outputs of the differential amplifier circuit, and an output-side winding that is coupled to the input-side winding via an electromagnetic field and that has one end connected to a reference potential; and a capacitive element (capacitor) provided between another end (node) of the output-side winding and the output node.

    Semiconductor device
    30.
    发明授权

    公开(公告)号:US11710735B2

    公开(公告)日:2023-07-25

    申请号:US17142663

    申请日:2021-01-06

    Abstract: On a single-crystal semiconductor substrate with an upper surface including a first direction in which an inverted mesa step extends and a second direction in which a forward mesa step extends in response to anisotropic etching in which an etching rate depends on crystal plane orientation, a bipolar transistor including a collector layer, a base layer, and an emitter layer that are epitaxially grown, and a base wire connected to the base layer are arranged. A step is provided at an edge of the base layer, and the base wire is extended from inside to outside of the base layer in a direction intersecting the first direction in a plan view. An intersection of the edge of the base layer and the base wire has a disconnection prevention structure that makes it difficult for step-caused disconnection of the base wire to occur.

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