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公开(公告)号:US11894874B2
公开(公告)日:2024-02-06
申请号:US17317087
申请日:2021-05-11
Applicant: Murata Manufacturing Co., Ltd.
Inventor: Ryuken Mizunuma , Satoshi Tanaka , Yasuhisa Yamamoto , Akiko Itabashi
IPC: H04B10/2575 , H04B7/15
CPC classification number: H04B10/2575 , H04B7/15 , H04B10/25752
Abstract: A communication network system is a communication network system that distributes information to a plurality of terminals inside a closed space. The communication network system includes a network server and a plurality of lighting fixtures each having an antenna that transmits and receives millimeter-wave-band communication signals to and from the terminals.
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公开(公告)号:US11528073B2
公开(公告)日:2022-12-13
申请号:US17009853
申请日:2020-09-02
Applicant: Murata Manufacturing Co., Ltd.
Inventor: Ryuken Mizunuma , Satoshi Tanaka , Yasuhisa Yamamoto , Akiko Itabashi
IPC: H04B7/15 , H04W4/80 , H04B17/318
Abstract: A communication terminal capable of at least millimeter-wave communication and microwave communication is provided. The communication terminal includes a repeater that relays communication between a first communication terminal and a second communication terminal by using millimeter-wave communication. Such a communication terminal is capable of maintaining good millimeter-wave communication between terminals.
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公开(公告)号:US10944438B2
公开(公告)日:2021-03-09
申请号:US16285408
申请日:2019-02-26
Applicant: Murata Manufacturing Co., Ltd.
Inventor: Satoshi Tanaka , Kazuo Watanabe , Tetsuaki Adachi , Masahito Numanami , Yasuhisa Yamamoto
Abstract: A communication unit includes the following elements. A first transmit circuit outputs a first signal or a second signal from a first input signal. A first amplifier amplifies the first signal and outputs a first amplified signal. A first signal generating circuit generates a third signal having a frequency higher than a frequency of the second signal, based on the second signal and a first reference signal. A first filter circuit receives the third signal and allows one of a frequency component representing a sum of the frequency of the second signal and a frequency of the first reference signal and a frequency component representing a difference therebetween to pass through the first filter circuit and attenuates the other one of the frequency components. A second amplifier amplifies the third signal output from the first filter circuit and outputs a second amplified signal.
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公开(公告)号:US10855235B2
公开(公告)日:2020-12-01
申请号:US16227189
申请日:2018-12-20
Applicant: Murata Manufacturing Co., Ltd.
Inventor: Takayuki Tsutsui , Satoshi Tanaka , Yasuhisa Yamamoto
Abstract: A power amplifier circuit amplifies a radio-frequency signal in a transmit frequency band. The power amplifier circuit includes an amplifier, a bias circuit, and an impedance circuit. The amplifier amplifies power of a radio-frequency signal and outputs an amplified signal. The impedance circuit is connected between a signal input terminal of the amplifier and a bias-current output terminal of the bias circuit and has frequency characteristics in which attenuation is obtained in the transmit frequency band. The impedance circuit includes first and second impedance circuits. The first impedance circuit is connected to the signal input terminal. The second impedance circuit is connected between the first impedance circuit and the bias-current output terminal.
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公开(公告)号:US20190058054A1
公开(公告)日:2019-02-21
申请号:US16058123
申请日:2018-08-08
Applicant: Murata Manufacturing Co., Ltd.
Inventor: Kenji SASAKI , Yasuhisa Yamamoto
IPC: H01L29/737 , H01L29/10 , H01L29/08 , H01L27/082
Abstract: On a single-crystal semiconductor substrate with an upper surface including a first direction in which an inverted mesa step extends and a second direction in which a forward mesa step extends in response to anisotropic etching in which an etching rate depends on crystal plane orientation, a bipolar transistor including a collector layer, a base layer, and an emitter layer that are epitaxially grown, and a base wire connected to the base layer are arranged. A step is provided at an edge of the base layer, and the base wire is extended from inside to outside of the base layer in a direction intersecting the first direction in a plan view. An intersection of the edge of the base layer and the base wire has a disconnection prevention structure that makes it difficult for step-caused disconnection of the base wire to occur.
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公开(公告)号:US10171036B2
公开(公告)日:2019-01-01
申请号:US15656646
申请日:2017-07-21
Applicant: Murata Manufacturing Co., Ltd.
Inventor: Satoshi Tanaka , Tetsuaki Adachi , Kazuo Watanabe , Masahito Numanami , Yasuhisa Yamamoto
Abstract: Provided is a power amplification circuit that includes: an amplifier that amplifies an input signal and outputs an amplified signal; a first bias circuit that supplies a first bias current or voltage to the amplifier; a second bias circuit that supplies a second bias current or voltage to the amplifier; a first control circuit that controls the first bias current or voltage; and a second control circuit that controls the second bias current or voltage. The current supplying capacity of the first bias circuit is different from the current supplying capacity of the second bias circuit.
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公开(公告)号:US12244072B2
公开(公告)日:2025-03-04
申请号:US17672696
申请日:2022-02-16
Applicant: Murata Manufacturing Co., Ltd.
Inventor: Hideki Ueda , Yasuhisa Yamamoto , Masashi Omuro , Kazunari Kawahata , Satoshi Tanaka , Ryuken Mizunuma
Abstract: An antenna device comprises a substrate including a planar first region and a planar second region; at least one first radiating element, arranged in the first region, that communicates a radio wave of a first frequency; and at least one second radiating element, arranged in the second region, that communicates a radio wave of a second frequency. A separation direction is a direction of a straight line connecting a first geometric center position of the at least one first radiating element and a second geometric center position of the at least one second radiating element, and in a case that the second region is viewed along a normal direction of the second region, an angle formed by the separation direction and a polarization direction of the at least one second radiating element is equal to or greater than 45° and equal to or less than 90°.
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公开(公告)号:US12119793B2
公开(公告)日:2024-10-15
申请号:US17193494
申请日:2021-03-05
Applicant: Murata Manufacturing Co., Ltd.
Inventor: Takashi Yamada , Satoshi Tanaka , Yasuhisa Yamamoto
CPC classification number: H03F3/21 , H01L23/49822 , H01L23/642 , H01L23/645 , H01L24/16 , H01L25/16 , H03F1/56 , H01L2224/16014 , H01L2224/16227 , H03F2200/387 , H03F2200/447
Abstract: A power amplifier module includes a substrate, an amplifier circuit including a plurality of transistors to be mounted on the substrate and a bump connected to the plurality of transistors, a harmonic termination circuit and an output matching circuit that are disposed in or on the substrate and configured to be electrically connected to the amplifier circuit, a connection pad disposed on the substrate and configured to be connected to the bump, and a plurality of connection wiring lines branching from the connection pad. The plurality of connection wiring lines include at least a first connection wiring line that connects the connection pad and the harmonic termination circuit to each other, a second connection wiring line that connects the connection pad and the output matching circuit to each other, and a third connection wiring line that connects the connection pad and an external power supply to each other.
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公开(公告)号:US11817837B2
公开(公告)日:2023-11-14
申请号:US17129041
申请日:2020-12-21
Applicant: Murata Manufacturing Co., Ltd.
Inventor: Yuri Honda , Satoshi Tanaka , Yasuhisa Yamamoto , Hiroki Shonai
CPC classification number: H03F3/245 , H03F3/195 , H03F2200/102 , H03F2200/171 , H03F2200/451 , H03F2200/537
Abstract: A power amplifier circuit has an input node from which an input signal, which is a high-frequency signal, is inputted and an output node to which the input signal is amplified by a differential amplifier circuit to be outputted as an output signal. The power amplifier circuit includes a balun transformer (second balun transformer) including an input-side winding that has a substantially center to which a power-supply voltage is supplied and that is connected between differential outputs of the differential amplifier circuit, and an output-side winding that is coupled to the input-side winding via an electromagnetic field and that has one end connected to a reference potential; and a capacitive element (capacitor) provided between another end (node) of the output-side winding and the output node.
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公开(公告)号:US11710735B2
公开(公告)日:2023-07-25
申请号:US17142663
申请日:2021-01-06
Applicant: Murata Manufacturing Co., Ltd.
Inventor: Kenji Sasaki , Yasuhisa Yamamoto
IPC: H01L27/082 , H01L29/205 , H01L29/737 , H01L29/10 , H01L29/08
CPC classification number: H01L27/0823 , H01L29/0817 , H01L29/0826 , H01L29/1004 , H01L29/205 , H01L29/7371
Abstract: On a single-crystal semiconductor substrate with an upper surface including a first direction in which an inverted mesa step extends and a second direction in which a forward mesa step extends in response to anisotropic etching in which an etching rate depends on crystal plane orientation, a bipolar transistor including a collector layer, a base layer, and an emitter layer that are epitaxially grown, and a base wire connected to the base layer are arranged. A step is provided at an edge of the base layer, and the base wire is extended from inside to outside of the base layer in a direction intersecting the first direction in a plan view. An intersection of the edge of the base layer and the base wire has a disconnection prevention structure that makes it difficult for step-caused disconnection of the base wire to occur.
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