公开(公告)号：US07279377B2

公开(公告)日：2007-10-09

申请号：US11200694

申请日：2005-08-10

Applicant: Neal R. Rueger ,  Gurtej Sandhu

Inventor： Neal R. Rueger ,  Gurtej Sandhu

IPC: H01L21/762

CPC classification number: H01L21/76224 ,  H01L21/7624 ,  H01L27/10844 ,  H01L27/11521 ,  H01L29/7833

Abstract: A method suitable for use during fabrication of a semiconductor device such as a dynamic random access memory or a flash programmable read-only memory comprises etching through silicon nitride and pad oxide layers and into a semiconductor wafer to form a trench into the wafer. A shallow trench isolation (STI) layer is formed in the opening in the silicon nitride and in the trench in the wafer which will, under certain conditions, form with an undesirable void. The silicon nitride and pad oxide layers are removed, then an epitaxial silicon layer is formed on the silicon wafer between the STI. A gate/tunnel oxide layer is formed on the epitaxial silicon layer, then a word line is formed over the gate/tunnel oxide. The epitaxial silicon layer ensures that some minimum distance is maintained between the gate/tunnel oxide and the void in the STI. Wafer processing may then be continued to form a completed semiconductor device.

Abstract translation: 适用于半导体器件（例如动态随机存取存储器或闪存可编程只读存储器）的制造期间使用的方法包括通过氮化硅和衬垫氧化物层蚀刻到半导体晶片中以在晶片中形成沟槽。 在硅氮化物的开口和晶片的沟槽中形成浅沟槽隔离（STI）层，这将在某些条件下形成不期望的空隙。 去除氮化硅和衬垫氧化物层，然后在STI之间的硅晶片上形成外延硅层。 在外延硅层上形成栅极/隧道氧化物层，然后在栅极/隧道氧化物上形成字线。 外延硅层确保在栅极/隧道氧化物和STI中的空隙之间保持一些最小距离。 然后可以继续晶片处理以形成完整的半导体器件。

公开(公告)号：US07189287B2

公开(公告)日：2007-03-13

申请号：US10879825

申请日：2004-06-29

Applicant: Neal R. Rueger

Inventor： Neal R. Rueger

IPC: C30B25/14

CPC classification number: C30B25/14 ,  C23C16/45529 ,  C23C16/45536 ,  C23C16/487

Abstract: Formation of a layer of material on a surface by atomic layer deposition methods and systems includes using electron bombardment of the chemisorbed precursor.

Abstract translation: 通过原子层沉积方法和系统在表面上形成材料层包括使用电化学吸附前体的电子轰击。

公开(公告)号：US20120299440A1

公开(公告)日：2012-11-29

申请号：US13567896

申请日：2012-08-06

Applicant: Neal R. Rueger

Inventor： Neal R. Rueger

IPC: H01L41/08

CPC classification number: G01H11/00 ,  H03H3/0077

Abstract: Devices usable as sensors, as transducers, or as both sensors and transducers include one or more nanotubes or nanowires. In some embodiments, the devices may each include a plurality of sensor/transducer devices carried by a common substrate. The sensor/transducer devices may be individually operable, and may exhibit a plurality of resonant frequencies to enhance the operable frequency bandwidth of the devices. Sensor/transducer devices include one or more elements configured to alter a resonant frequency of a nanotube. Such elements may be selectively and individually actuable. Methods for sensing mechanical displacements and vibrations include monitoring an electrical characteristic of a nanotube. Methods for generating mechanical displacements and vibrations include using an electrical signal to induce mechanical displacements or vibrations in one or more nanotubes. Methods for adjusting an electrical signal include passing an electrical signal through a nanotube and changing a resonant frequency of the nanotube.

Abstract translation: 可用作传感器，传感器或传感器和换能器的装置包括一个或多个纳米管或纳米线。 在一些实施例中，装置可以各自包括由公共衬底承载的多个传感器/换能器装置。 传感器/换能器装置可以单独操作，并且可以呈现多个谐振频率以增强装置的可操作频率带宽。 传感器/换能器装置包括配置成改变纳米管的共振频率的一个或多个元件。 这样的元件可以是选择性地和单独地致动的。 用于感测机械位移和振动的方法包括监测纳米管的电特性。 产生机械位移和振动的方法包括使用电信号在一个或多个纳米管中引起机械位移或振动。 用于调整电信号的方法包括使电信号通过纳米管并改变纳米管的谐振频率。

公开(公告)号：US08256293B2

公开(公告)日：2012-09-04

申请号：US12901937

申请日：2010-10-11

Applicant: Neal R. Rueger

Inventor： Neal R. Rueger

IPC: G01N29/04 ,  H02N2/18

CPC classification number: G01H11/00 ,  H03H3/0077

Abstract: Devices usable as sensors, as transducers, or as both sensors and transducers include one or more nanotubes or nanowires. In some embodiments, the devices may each include a plurality of sensor/transducer devices carried by a common substrate. The sensor/transducer devices may be individually operable, and may exhibit a plurality of resonant frequencies to enhance the operable frequency bandwidth of the devices. Sensor/transducer devices include one or more elements configured to alter a resonant frequency of a nanotube. Such elements may be selectively and individually actuable. Methods for sensing mechanical displacements and vibrations include monitoring an electrical characteristic of a nanotube. Methods for generating mechanical displacements and vibrations include using an electrical signal to induce mechanical displacements or vibrations in one or more nanotubes. Methods for adjusting an electrical signal include passing an electrical signal through a nanotube and changing a resonant frequency of the nanotube.

Abstract translation: 可用作传感器，传感器或传感器和换能器的装置包括一个或多个纳米管或纳米线。 在一些实施例中，装置可以各自包括由公共衬底承载的多个传感器/换能器装置。 传感器/换能器装置可以单独操作，并且可以呈现多个谐振频率以增强装置的可操作频率带宽。 传感器/换能器装置包括配置成改变纳米管的共振频率的一个或多个元件。 这样的元件可以是选择性地和单独地致动的。 用于感测机械位移和振动的方法包括监测纳米管的电特性。 产生机械位移和振动的方法包括使用电信号在一个或多个纳米管中引起机械位移或振动。 用于调整电信号的方法包括使电信号通过纳米管并改变纳米管的谐振频率。

公开(公告)号：US20110023608A1

公开(公告)日：2011-02-03

申请号：US12901937

申请日：2010-10-11

Applicant: Neal R. Rueger

Inventor： Neal R. Rueger

IPC: G01N29/12 ,  H01L41/04

CPC classification number: G01H11/00 ,  H03H3/0077

Abstract: Devices usable as sensors, as transducers, or as both sensors and transducers include one or more nanotubes or nanowires. In some embodiments, the devices may each include a plurality of sensor/transducer devices carried by a common substrate. The sensor/transducer devices may be individually operable, and may exhibit a plurality of resonant frequencies to enhance the operable frequency bandwidth of the devices. Sensor/transducer devices include one or more elements configured to alter a resonant frequency of a nanotube. Such elements may be selectively and individually actuable. Methods for sensing mechanical displacements and vibrations include monitoring an electrical characteristic of a nanotube. Methods for generating mechanical displacements and vibrations include using an electrical signal to induce mechanical displacements or vibrations in one or more nanotubes. Methods for adjusting an electrical signal include passing an electrical signal through a nanotube and changing a resonant frequency of the nanotube.

Abstract translation: 可用作传感器，传感器或传感器和换能器的装置包括一个或多个纳米管或纳米线。 在一些实施例中，装置可以各自包括由公共衬底承载的多个传感器/换能器装置。 传感器/换能器装置可以单独操作，并且可以呈现多个谐振频率以增强装置的可操作频率带宽。 传感器/换能器装置包括配置成改变纳米管的共振频率的一个或多个元件。 这样的元件可以是选择性地和单独地致动的。 用于感测机械位移和振动的方法包括监测纳米管的电特性。 产生机械位移和振动的方法包括使用电信号在一个或多个纳米管中引起机械位移或振动。 用于调整电信号的方法包括使电信号通过纳米管并改变纳米管的谐振频率。

公开(公告)号：US07833427B2

公开(公告)日：2010-11-16

申请号：US11503681

申请日：2006-08-14

Applicant: Neal R. Rueger ,  Mark J. Williamson ,  Gurtej S. Sandhu

Inventor： Neal R. Rueger ,  Mark J. Williamson ,  Gurtej S. Sandhu

IPC: H01L21/302

CPC classification number: H01L21/31116

Abstract: Methods and devices for selective etching in a semiconductor process are shown. Chemical species generated in a reaction chamber provide both a selective etching function and concurrently form a protective coating on other regions. An electron beam provides activation to selective chemical species. In one example, reactive species are generated from a halogen and carbon containing gas source. Addition of other gasses to the system can provide functions such as controlling a chemistry in a protective layer during a processing operation.

Abstract translation: 示出了在半导体工艺中选择性蚀刻的方法和装置。 在反应室中产生的化学物质既提供选择性蚀刻功能又在其它区域形成保护涂层。 电子束为选择性化学物质提供活化。 在一个实例中，反应物质由含卤素和碳的气体源产生。 在系统中添加其他气体可以提供诸如在处理操作期间控制保护层中的化学物质的功能。

公开(公告)号：US07791071B2

公开(公告)日：2010-09-07

申请号：US11503680

申请日：2006-08-14

Applicant: Neal R. Rueger ,  Mark J. Williamson ,  Gurtej S. Sandhu ,  Justin R. Arrington

Inventor： Neal R. Rueger ,  Mark J. Williamson ,  Gurtej S. Sandhu ,  Justin R. Arrington

IPC: H01L23/58

CPC classification number: H01L31/02325 ,  B29D11/00365 ,  H01L22/20 ,  H01L27/14627

Abstract: Methods and apparatus may operate to position a sample, including an imager lens surface, within a processing chamber. Further activities may include creating a layer of reactive material in proximity with the imager lens surface, and exciting a portion of the layer of reactive material in proximity with the imager lens surface to form chemical radicals. Additional activities may include removing a portion of the material in proximity to the excited portion of the imager lens surface to a predetermined level, and continuing the creating, exciting and removing actions until at least one of a plurality of stop criteria occurs.

Abstract translation: 方法和装置可以操作以将包括成像器透镜表面的样品在处理室内定位。 进一步的活动可以包括在成像器透镜表面附近形成一层反应性材料，以及在成像器透镜表面附近激发反应性材料层的一部分以形成化学自由基。 附加活动可以包括将接近成像器透镜表面的激发部分的材料的一部分移除到预定水平，并且继续创建，激励和移除动作直到发生多个停止标准中的至少一个。

公开(公告)号：US20100221922A1

公开(公告)日：2010-09-02

申请号：US12780686

申请日：2010-05-14

Applicant: Neal R. Rueger ,  Mark J. Williamson ,  Gurtej S. Sandhu

Inventor： Neal R. Rueger ,  Mark J. Williamson ,  Gurtej S. Sandhu

IPC: H01L21/3065

CPC classification number: H01L21/31116 ,  H01L21/31144 ,  H01L21/3127

Abstract: Methods and devices for selective etching in a semiconductor process are shown. Chemical species generated in a reaction chamber provide both a selective etching function and concurrently form a protective coating on other regions. An electron beam provides activation to selective chemical species. In one example, reactive species are generated from a plasma source to provide an increased reactive species density. Addition of other gasses to the system can provide functions such as controlling a chemistry in a protective layer during a processing operation. In one example an electron beam array such as a carbon nanotube array is used to selectively expose a surface during a processing operation.

Abstract translation: 示出了在半导体工艺中选择性蚀刻的方法和装置。 在反应室中产生的化学物质既提供选择性蚀刻功能又在其它区域形成保护涂层。 电子束为选择性化学物质提供活化。 在一个实例中，从等离子体源产生反应性物质以提供增加的反应物种密度。 在系统中添加其他气体可以提供诸如在处理操作期间控制保护层中的化学物质的功能。 在一个实例中，使用诸如碳纳米管阵列的电子束阵列在处理操作期间选择性地暴露表面。

公开(公告)号：US20090288603A1

公开(公告)日：2009-11-26

申请号：US12534569

申请日：2009-08-03

Applicant: Neal R. Rueger ,  Mark J. Williamson ,  Gurtej S. Sandhu

Inventor： Neal R. Rueger ,  Mark J. Williamson ,  Gurtej S. Sandhu

IPC: C23C16/513

CPC classification number: H01L21/31116 ,  C23C16/0245 ,  C23C16/042 ,  C23C16/26 ,  C23C16/517 ,  H01J37/28 ,  H01J37/3178 ,  H01J37/3233 ,  H01J2237/2605 ,  H01J2237/3137 ,  H01J2237/3151 ,  H01J2237/31732 ,  H01J2237/3174 ,  H01L27/1052 ,  Y10S438/905 ,  Y10S438/909

Abstract: Methods and devices for selective etching in a semiconductor process are shown. Chemical species generated in a reaction chamber provide both a selective etching function and concurrently form a protective coating on other regions. An electron beam provides activation to selective chemical species. In one example, reactive species are generated from a plasma source to provide an increased reactive species density. Addition of other gasses to the system can provide functions such as controlling a chemistry in a protective layer during a processing operation.

Abstract translation: 示出了在半导体工艺中选择性蚀刻的方法和装置。 在反应室中产生的化学物质既提供选择性蚀刻功能又在其它区域形成保护涂层。 电子束为选择性化学物质提供活化。 在一个实例中，从等离子体源产生反应性物质以提供增加的反应物种密度。 在系统中添加其他气体可以提供诸如在处理操作期间控制保护层中的化学物质的功能。

公开(公告)号：US20080314149A1

公开(公告)日：2008-12-25

申请号：US11767962

申请日：2007-06-25

Applicant: Neal R. Rueger

Inventor： Neal R. Rueger

IPC: B82B1/00 ,  G01R27/26 ,  G01R27/02 ,  G01H3/00 ,  H02N2/04

CPC classification number: G01H11/00 ,  H03H3/0077

Abstract: Devices usable as sensors, as transducers, or as both sensors and transducers include one or more nanotubes or nanowires. In some embodiments, the devices may each include a plurality of sensor/transducer devices carried by a common substrate. The sensor/transducer devices may be individually operable, and may exhibit a plurality of resonant frequencies to enhance the operable frequency bandwidth of the devices. Sensor/transducer devices include one or more elements configured to alter a resonant frequency of a nanotube. Such elements may be selectively and individually actuable. Methods for sensing mechanical displacements and vibrations include monitoring an electrical characteristic of a nanotube. Methods for generating mechanical displacements and vibrations include using an electrical signal to induce mechanical displacements or vibrations in one or more nanotubes. Methods for adjusting an electrical signal include passing an electrical signal through a nanotube and changing a resonant frequency of the nanotube.

Abstract translation: 可用作传感器，传感器或传感器和换能器的装置包括一个或多个纳米管或纳米线。 在一些实施例中，装置可以各自包括由公共衬底承载的多个传感器/换能器装置。 传感器/换能器装置可以单独操作，并且可以呈现多个谐振频率以增强装置的可操作频率带宽。 传感器/换能器装置包括配置成改变纳米管的共振频率的一个或多个元件。 这样的元件可以是选择性地和单独地致动的。 用于感测机械位移和振动的方法包括监测纳米管的电特性。 产生机械位移和振动的方法包括使用电信号在一个或多个纳米管中引起机械位移或振动。 用于调整电信号的方法包括使电信号通过纳米管并改变纳米管的谐振频率。