公开(公告)号：US06319742B1

公开(公告)日：2001-11-20

申请号：US09361246

申请日：1999-07-27

申请人： Nobuhiko Hayashi ,  Takashi Kano

发明人： Nobuhiko Hayashi ,  Takashi Kano

IPC分类号： H01L2100

CPC分类号： H01S5/32341 ,  H01L21/31608 ,  H01L33/007 ,  H01S5/0216 ,  H01S5/0217 ,  H01S2304/12

摘要： A GaN layer is grown on a sapphire substrate, an SiO2 film is formed on the GaN layer, and a GaN semiconductor layer including an MQW active layer is then grown on the GaN layer and the SiO2 film using epitaxial lateral overgrowth. The GaN based semiconductor layer is removed by etching except in a region on the SiO2 film, and a p electrode is then formed on the top surface of the GaN based semiconductor layer on the SiO2 film, to join the p electrode on the GaN based semiconductor layer to an ohmic electrode on a GaAs substrate. An n electrode is formed on the top surface of the GaN based semiconductor layer.

摘要翻译： 在蓝宝石衬底上生长GaN层，在GaN层上形成SiO 2膜，然后使用外延横向生长在GaN层和SiO 2膜上生长包括MQW有源层的GaN半导体层。 通过蚀刻除去在SiO 2膜上的区域中的GaN基半导体层，然后在SiO 2膜上的GaN基半导体层的顶表面上形成ap电极，以将p电极连接到GaN基半导体层 涉及GaAs衬底上的欧姆电极。 n电极形成在GaN基半导体层的顶表面上。

公开(公告)号：US20100252913A1

公开(公告)日：2010-10-07

申请号：US12818694

申请日：2010-06-18

申请人： Nobuhiko Hayashi ,  Takashi Kano

发明人： Nobuhiko Hayashi ,  Takashi Kano

IPC分类号： H01L29/20

CPC分类号： H01S5/32341 ,  H01L21/31608 ,  H01L33/007 ,  H01S5/0216 ,  H01S5/0217 ,  H01S2304/12

摘要： A GaN layer is grown on a sapphire substrate, an SiO2 film is formed on the GaN layer, and a GaN semiconductor layer including an MQW active layer is then grown on the GaN layer and the SiO2 film using epitaxial lateral overgrowth. The GaN based semiconductor layer is removed by etching except in a region on the SiO2 film, and a p electrode is then formed on the top surface of the GaN based semiconductor layer on the SiO2 film, to join the p electrode on the GaN based semiconductor layer to an ohmic electrode on a GaAs substrate. An n electrode is formed on the top surface of the GaN based semiconductor layer.

摘要翻译： 在蓝宝石衬底上生长GaN层，在GaN层上形成SiO 2膜，然后使用外延横向生长在GaN层和SiO 2膜上生长包括MQW有源层的GaN半导体层。 通过蚀刻除去在SiO 2膜上的区域中的GaN基半导体层，然后在SiO 2膜上的GaN基半导体层的顶表面上形成ap电极，以将p电极连接到GaN基半导体层 涉及GaAs衬底上的欧姆电极。 n电极形成在GaN基半导体层的顶表面上。

公开(公告)号：US20090114941A1

公开(公告)日：2009-05-07

申请号：US12149960

申请日：2008-05-12

申请人： Nobuhiko Hayashi ,  Takashi Kano

发明人： Nobuhiko Hayashi ,  Takashi Kano

IPC分类号： H01L33/00 ,  H01L21/00 ,  H01L21/20 ,  H01L21/02

CPC分类号： H01S5/32341 ,  H01L21/31608 ,  H01L33/007 ,  H01S5/0216 ,  H01S5/0217 ,  H01S2304/12

摘要： A GaN layer is grown on a sapphire substrate, an SiO2 film is formed on the GaN layer, and a GaN semiconductor layer including an MQW active layer is then grown on the GaN layer and the SiO2 film using epitaxial lateral overgrowth. The GaN based semiconductor layer is removed by etching except in a region on the SiO2 film, and a p electrode is then formed on the top surface of the GaN based semiconductor layer on the SiO2 film, to join the p electrode on the GaN based semiconductor layer to an ohmic electrode on a GaAs substrate. An n electrode is formed on the top surface of the GaN based semiconductor layer.

公开(公告)号：US20050145878A1

公开(公告)日：2005-07-07

申请号：US11054956

申请日：2005-02-11

申请人： Nobuhiko Hayashi ,  Takashi Kano

发明人： Nobuhiko Hayashi ,  Takashi Kano

IPC分类号： H01L21/316 ,  H01L33/00 ,  H01S5/02 ,  H01S5/323 ,  H01L29/22

CPC分类号： H01S5/32341 ,  H01L21/31608 ,  H01L33/007 ,  H01S5/0216 ,  H01S5/0217 ,  H01S2304/12

摘要： A GaN layer is grown on a sapphire substrate, an SiO2 film is formed on the GaN layer, and a GaN semiconductor layer including an MQW active layer is then grown on the GaN layer and the SiO2 film using epitaxial lateral overgrowth. The GaN based semiconductor layer is removed by etching except in a region on the SiO2 film, and a p electrode is then formed on the top surface of the GaN based semiconductor layer on the SiO2 film, to join the p electrode on the GaN based semiconductor layer to an ohmic electrode on a GaAs substrate. An n electrode is formed on the top surface of the GaN based semiconductor layer.

摘要翻译： 在蓝宝石衬底上生长GaN层，在GaN层上形成SiO 2膜，然后在GaN层上生长包括MQW有源层的GaN半导体层，并且将SiO _{2 膜使用外延横向过度生长。 通过蚀刻除去GaN基半导体层，除了在SiO 2膜上的区域中，然后在SiO 2膜上的GaN基半导体层的顶表面上形成ap电极， / SUB>膜，将GaN基半导体层上的p电极连接到GaAs衬底上的欧姆电极。 n电极形成在GaN基半导体层的顶表面上。}

公开(公告)号：US20130062877A1

公开(公告)日：2013-03-14

申请号：US13640265

申请日：2012-02-22

申请人： Nobuhiko Hayashi ,  Hajime Imura

发明人： Nobuhiko Hayashi ,  Hajime Imura

IPC分类号： F16L35/00

CPC分类号： F16L37/091 ,  F16L41/021

摘要： An inner tubular portion (15) and an outer tubular portion (16) form an insertion space (14) of a plastic pipe (11) and are integrally formed on a joint main body (13). A cap (29) is connected to the outer tubular portion (16) by projection-recess engagement. A retainer mechanism (27) of the plastic pipe (11) is provided between the outer tubular portion (16) and the cap (29). A cutout portion (20) is formed in the outer tubular portion (16), and a bulging engagement portion (24) is arranged on the cutout portion (20). The outer periphery of the bulging engagement portion (24) is connected to the cap (29) by the projection-recess engagement. A restricting portion is provided between the cutout portion (20) and the bulging engagement portion (24). The restricting portion is composed of a first tapered surface (21) and a second tapered surface (25). The first tapered surface (21) is provided on the cutout portion (20) and decreases in width toward the outer end. The second tapered surface (25) is provided on the bulging engagement portion (24) and engaged with the first tapered surface (21).

摘要翻译： 一个内部管状部分（15）和一个外部管状部分（16）形成一个塑料管道（11）的插入空间（14），并一体形成在一个接头主体（13）上。 帽（29）通过突出凹部接合连接到外管状部分（16）。 塑料管（11）的保持机构（27）设置在外管状部分（16）和帽（29）之间。 在外管部（16）上形成切口部（20），在切口部（20）上设置有凸出接合部（24）。 凸出接合部分（24）的外周通过突出凹陷接合连接到盖（29）。 在切口部（20）与凸出接合部（24）之间设有限制部。 限制部分由第一锥形表面（21）和第二锥形表面（25）构成。 第一锥形表面（21）设置在切口部（20）上，朝向外端减小宽度。 第二锥形表面（25）设置在凸出接合部分（24）上并与第一锥形表面（21）接合。

公开(公告)号：US20120306118A1

公开(公告)日：2012-12-06

申请号：US13504052

申请日：2011-11-28

申请人： Nobuhiko Hayashi ,  Koichi Nakamura ,  Masahiro Okita

发明人： Nobuhiko Hayashi ,  Koichi Nakamura ,  Masahiro Okita

IPC分类号： B29C45/14

CPC分类号： F16L55/00 ,  B29C45/006 ,  B29C45/261 ,  B29C45/2628 ,  B29C45/44 ,  B29L2031/246 ,  F16L37/091

摘要： An inner tubular portion (15) and an outer tubular portion 16 for forming an insertion space for a plastic pipe (11) are formed integrally with a joint body (13). Two fitting grooves (17) are formed in the outer peripheral surface of the inner tubular portion 15. Two sealing members (18) for maintaining water-tightness in the gap between the plastic pipe (11) received in the insertion space and the inner tubular portion (15) are fitted in the corresponding fitting grooves 17. A pair of view windows (25) for visually checking the fitting grooves (17) and the sealing members (18), which are fitted in the fitting grooves (17), from the exterior are formed in the outer tubular portion (16). The view windows (25) are arranged at opposing positions.

摘要翻译： 一个用于形成塑料管（11）的插入空间的内部管状部分（15）和一个外部管状部分16与接合体（13）整体形成。 在内筒部15的外周面上形成有两个嵌合槽（17）。另外，在容纳在插入空间的塑料管（11）与内筒管（11）之间的间隙保持水密性的两个密封构件 部分（15）装配在相应的装配槽17中。一对用于目视检查安装在装配槽（17）中的装配槽（17）和密封构件（18）的视窗（25） 外部形成在外管状部分（16）中。 视窗（25）布置在相对的位置。

公开(公告)号：US07561774B2

公开(公告)日：2009-07-14

申请号：US10797053

申请日：2004-03-11

申请人： Keiichi Kuramoto ,  Hiroaki Izu ,  Mitsuaki Matsumoto ,  Youhei Nakagawa ,  Hitoshi Hirano ,  Nobuhiko Hayashi

发明人： Keiichi Kuramoto ,  Hiroaki Izu ,  Mitsuaki Matsumoto ,  Youhei Nakagawa ,  Hitoshi Hirano ,  Nobuhiko Hayashi

IPC分类号： G02B6/10

CPC分类号： G02B6/1221 ,  G02B6/138 ,  G02B2006/121

摘要： In the optical waveguide which comprises a core layer to be an optical transmission region and an upper clad layer and a lower clad layer covering the surrounding of the core layer and of which the upper clad layer is formed while being shrunk in the volume, a stress moderating layer formed a material with a smaller storage modulus than that of the upper clad layer is formed between the upper clad layer and the lower clad layer in at least a portion of a region where the upper clad layer and the lower clad layer are brought into contact with each other.

摘要翻译： 在包括作为光传输区域的芯层和覆盖芯层的周围的上覆盖层和下覆盖层的光波导中，并且在收缩体积时形成上覆盖层，应力 在上包层和下包层的区域的至少一部分中形成具有比上包层的储能模量小的材料的调节层形成在上包覆层和下包层之间 互相接触。

公开(公告)号：US07521725B2

公开(公告)日：2009-04-21

申请号：US11059648

申请日：2005-02-17

申请人： Youhei Nakagawa ,  Nobuhiko Hayashi ,  Keiichi Kuramoto ,  Mitsuaki Matsumoto ,  Hitoshi Hirano

发明人： Youhei Nakagawa ,  Nobuhiko Hayashi ,  Keiichi Kuramoto ,  Mitsuaki Matsumoto ,  Hitoshi Hirano

IPC分类号： H01L33/00

CPC分类号： G02B6/138

摘要： Disclosed herein is an optical waveguide comprising a core layer to be an optical waveguide region, an upper clad layer covering the core layer and a lower clad layer, characterized in that an ultraviolet control region for preventing ultraviolet light from entering is provided at any one location of under the lower clad layer, on an interface of the lower clad layer and the upper clad layer, and on the upper clad layer. And a method of fabricating this optical waveguide is also disclosed.

摘要翻译： 本文公开了一种光波导，其包括作为光波导区域的芯层，覆盖芯层的上覆层和下包层，其特征在于，在任何一个位置处设置用于防止紫外线进入的紫外线控制区域 在下包层的下面，在下包层和上包层的界面上，在上包层上。 并且还公开了制造该光波导的方法。

公开(公告)号：US07355208B2

公开(公告)日：2008-04-08

申请号：US11195637

申请日：2005-08-03

申请人： Masayuki Hata ,  Tatsuya Kunisato ,  Nobuhiko Hayashi

发明人： Masayuki Hata ,  Tatsuya Kunisato ,  Nobuhiko Hayashi

IPC分类号： H01L27/15

CPC分类号： B82Y20/00 ,  H01L21/0237 ,  H01L21/02378 ,  H01L21/02381 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02639 ,  H01L21/02647 ,  H01L33/007 ,  H01S5/0207 ,  H01S5/22 ,  H01S5/2214 ,  H01S5/227 ,  H01S5/34333 ,  H01S2304/12

摘要： A nitride-based semiconductor element having superior mass productivity and excellent element characteristics is obtained. This nitride-based semiconductor element comprises a substrate comprising a surface having projection portions, a mask layer formed to be in contact with only the projection portions of the surface of the substrate, a first nitride-based semiconductor layer formed on recess portions of the substrate and the mask layer and a nitride-based semiconductor element layer, formed on the first nitride-based semiconductor layer, having an element region. Thus, the first nitride-based semiconductor layer having low dislocation density is readily formed on the projection portions of the substrate and the mask layer through the mask layer serving for selective growth. When the nitride-based semiconductor element layer having the element region is grown on the first nitride-based semiconductor layer having low dislocation density, a nitride-based semiconductor element having excellent element characteristics can be readily obtained. The first nitride-based semiconductor layer is formed through only single growth on the substrate, whereby a nitride-based semiconductor element having excellent mass productivity is obtained.

公开(公告)号：US20070189690A1

公开(公告)日：2007-08-16

申请号：US11730637

申请日：2007-04-03

申请人： Nobuhiko Hayashi ,  Keiichi Kuramoto ,  Youhei Nakagawa ,  Mitsuaki Matsumoto ,  Hitoshi Hirano

发明人： Nobuhiko Hayashi ,  Keiichi Kuramoto ,  Youhei Nakagawa ,  Mitsuaki Matsumoto ,  Hitoshi Hirano

IPC分类号： G02B6/10

CPC分类号： G02B6/1245 ,  G02B6/12004 ,  G02B6/1221 ,  G02B6/30 ,  G02B6/422

摘要： Disclosed herein is an optical waveguide comprising a core layer to be an optical transmission region, an upper clad layer and a lower clad layer covering the core layer, in which the core layer, the upper clad layer and the lower clad layer are formed from resin materials, characterized in that a microlens made of a material having a higher refractive index than that of a material constituting said core layer is disposed in the vicinity of an end face of said core layer.

摘要翻译： 本发明公开了一种光波导，其包括作为光透射区域的芯层，覆盖芯层的上覆盖层和下覆盖层，其中芯层，上覆层和下覆盖层由树脂形成 材料，其特征在于，由具有比构成所述芯层的材料的折射率高的材料制成的微透镜设置在所述芯层的端面附近。