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    Method of manufacturing light emitting diodes and light emitting diode
    21.
    发明授权
    Method of manufacturing light emitting diodes and light emitting diode 有权

    公开(公告)号：US11101402B2

    公开(公告)日：2021-08-24

    申请号：US16489678

    申请日：2018-02-16

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： Ivar Tangring

    IPC: H01L29/18 ,  H01L33/00 ,  H01L23/00 ,  H01L25/075 ,  H01L27/15 ,  H01L33/60

    Abstract: A method for manufacturing light emitting diodes and a light emitting diode are disclosed. In an embodiment a method includes providing a light emitting diode chip with a growth substrate and with a semiconductor layer sequence for generating radiation, soldering chip contact surfaces located on a chip underside of the semiconductor layer sequence facing away from the growth substrate to carrier contact surfaces of a carrier, applying a liquid connector transparent to the radiation to a substrate upper side of the growth substrate facing away from the semiconductor layer sequence, fastening a fluorescent body to the substrate upper side, the connector being partially displaced by the fluorescent body from the substrate upper side so that chip side faces are predominantly covered by the connector and generating a reflector on outer faces of the connector facing away from the light emitting diode chip on the chip side faces, the outer faces pointing in a direction away from the carrier.

    Light Emitting Diode Chip Having Temperature Compensation of the Wavelength
    23.
    发明申请
    Light Emitting Diode Chip Having Temperature Compensation of the Wavelength 审中-公开

    公开(公告)号：US20170271553A1

    公开(公告)日：2017-09-21

    申请号：US15532236

    申请日：2015-11-25

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： Andreas Rudolph ,  Petrus Sundgren ,  Ivar Tangring

    IPC: H01L33/06 ,  H01L33/08

    CPC classification number: H01L33/06 ,  H01L33/08

    Abstract: An optoelectronic semiconductor chip is disclosed. In an embodiment the optoelectronic semiconductor chip includes a p-type semiconductor region, an n-type semiconductor region, and an active layer arranged between the p-type semiconductor region and the n-type semiconductor region. The active layer is designed as a multiple quantum well structure, wherein the multiple quantum well structure has a first region of alternating first quantum well layers and first barrier layers and a second region having at least one second quantum well layer and at least one second barrier layer. The at least one second quantum well layer has an electronic band gap (EQW2) that is less than the electronic band gap (EQW1) of the first quantum well layers, and the at least one second barrier layer has an electronic band gap (EB2) that is greater than the electronic band gap (EB1) of the first barrier layers.

    Method for producing a plurality of radiation-emitting semiconductor devices with a screen for a screen printing process
    24.
    发明授权
    Method for producing a plurality of radiation-emitting semiconductor devices with a screen for a screen printing process 有权

    公开(公告)号：US11616178B2

    公开(公告)日：2023-03-28

    申请号：US16500946

    申请日：2018-03-21

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： Ivar Tangring ,  Thomas Schlereth

    IPC: H01L33/60 ,  H01L33/48 ,  H01L33/52

    Abstract: A method for producing a plurality of radiation emitting semiconductor devices and a radiation emitting semiconductor device are disclosed. In an embodiment a method include providing an auxiliary carrier, applying a plurality of radiation-emitting semiconductor chips to the auxiliary carrier with front sides so that rear sides of the semiconductor chips are freely accessible, wherein each rear side of the respective semiconductor chip has at least one electrical contact, applying spacers to the auxiliary carrier so that the spacers directly adjoin side surfaces of the semiconductor chips and applying a casting compound between the semiconductor chips by a screen printing process such that a semiconductor chip assembly is formed, wherein a screen for the screen printing process has a plurality of cover elements, and wherein each cover element covers at least one electrical contact.

    Method for Producing an Optoelectronic Device
    27.
    发明申请
    Method for Producing an Optoelectronic Device 有权

    公开(公告)号：US20220020902A1

    公开(公告)日：2022-01-20

    申请号：US17296378

    申请日：2019-12-03

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： Gregory Bellynck ,  Ivar Tangring

    IPC: H01L33/56 ,  H01L33/60

    Abstract: In an embodiment a method includes providing a carrier with an optoelectronic semiconductor chip-component arranged on a top side of the carrier, arranging a first potting material on the top side of the carrier, arranging a second potting material on the first potting material, wherein the second potting material comprises a higher density than the first potting material, wherein a top side of the optoelectronic semiconductor chip-component is covered by neither the first potting material nor the second potting material and allowing a force to act on the first potting material and the second potting material such that the second potting material migrates in a direction toward the top side of the carrier.

    Optoelectronic Semiconductor Component and Method for Producing an Optoelectronic Semiconductor Component
    29.
    发明申请
    Optoelectronic Semiconductor Component and Method for Producing an Optoelectronic Semiconductor Component 有权

    公开(公告)号：US20210391509A1

    公开(公告)日：2021-12-16

    申请号：US17287889

    申请日：2019-10-28

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： Ivar Tangring ,  Peter Nagel

    IPC: H01L33/50 ,  H01L33/10 ,  H01L27/142 ,  H01L33/00

    Abstract: In an embodiment an optoelectronic semiconductor component includes a semiconductor body having an active region configured to generate first electromagnetic radiation, a wavelength conversion element having a conversion region and a sacrificial region, the conversion region configured to convert at least a portion of the first electromagnetic radiation to second electromagnetic radiation and a shaped body in which the semiconductor body and the wavelength conversion element are at least partially embedded and which is at least in places directly adjacent to the semiconductor body and the wavelength conversion element, wherein the conversion region is arranged between the sacrificial region and the semiconductor body, wherein the sacrificial region is transmissive to the first and second electromagnetic radiations, and wherein the shaped body is a reflector for the first and second electromagnetic radiations.

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