公开(公告)号：US06528858B1

公开(公告)日：2003-03-04

申请号：US10044892

申请日：2002-01-11

申请人： Bin Yu ,  Qi Xiang ,  Olov Karlsson ,  HaiHong Wang ,  Zoran Krivokapic

发明人： Bin Yu ,  Qi Xiang ,  Olov Karlsson ,  HaiHong Wang ,  Zoran Krivokapic

IPC分类号： H01L2902

CPC分类号： H01L29/513 ,  H01L21/28167 ,  H01L21/28194 ,  H01L21/76264 ,  H01L21/823857 ,  H01L21/84 ,  H01L27/1203 ,  H01L29/517 ,  H01L29/518

摘要： A semiconductor wafer including an NMOS device and a PMOS device. The NMOS device is formed to have a high-K gate dielectric and the PMOS device is formed to have a standard-K gate dielectric. A method of forming the NMOS device and the PMOS device is also disclosed.

摘要翻译： 一种包括NMOS器件和PMOS器件的半导体晶片。 NMOS器件形成为具有高K栅极电介质，并且PMOS器件形成为具有标准K栅极电介质。 还公开了形成NMOS器件和PMOS器件的方法。

公开(公告)号：US08784572B2

公开(公告)日：2014-07-22

申请号：US13276973

申请日：2011-10-19

申请人： Anh Duong ,  Sean Barstow ,  Olov Karlsson ,  Bei Li ,  James Mavrinac

发明人： Anh Duong ,  Sean Barstow ,  Olov Karlsson ,  Bei Li ,  James Mavrinac

IPC分类号： B08B3/00

CPC分类号： H01L21/02052 ,  H01L21/02068 ,  H01L21/28518 ,  H01L29/665

摘要： A method for cleaning platinum residues from a surface of a substrate is provided. The method initiates with exposing the surface to a first solution containing a mixture of nitric acid and hydrochloric acid. Then, the surface is exposed to a second solution containing hydrochloric acid.

摘要翻译： 提供了从基板的表面清除铂残留物的方法。 该方法首先将表面暴露于含有硝酸和盐酸混合物的第一溶液。 然后，将表面暴露于含有盐酸的第二溶液。

公开(公告)号：US08735302B2

公开(公告)日：2014-05-27

申请号：US13480023

申请日：2012-05-24

申请人： Amol Joshi ,  John Foster ,  Zhendong Hong ,  Olov Karlsson ,  Bei Li ,  Usha Raghuram

发明人： Amol Joshi ,  John Foster ,  Zhendong Hong ,  Olov Karlsson ,  Bei Li ,  Usha Raghuram

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： H01L29/66181 ,  G01N27/002 ,  H01L22/14 ,  H01L22/20

摘要： Metal gate high-k capacitor structures with lithography patterning are used to extract gate work function using a combinatorial workflow. Oxide terracing, together with high productivity combinatorial process flow for metal deposition can provide optimum high-k gate dielectric and metal gate solutions for high performance logic transistors. The high productivity combinatorial technique can provide an evaluation of effective work function for given high-k dielectric metal gate stacks for PMOS and NMOS transistors, which is critical in identifying and selecting the right materials.

摘要翻译： 使用光刻图案化的金属栅极高k电容器结构使用组合工作流程提取门功函数。 氧化物梯田，以及用于金属沉积的高生产率组合工艺流程可为高性能逻辑晶体管提供最佳的高k栅介质和金属栅极解决方案。 高生产率组合技术可以为PMOS和NMOS晶体管的给定高k介质金属栅极叠层提供有效的工作函数的评估，这对于识别和选择正确的材料至关重要。

公开(公告)号：US20050011621A1

公开(公告)日：2005-01-20

申请号：US10494469

申请日：2002-10-31

申请人： Ulla Westermark ,  Olov Karlsson

发明人： Ulla Westermark ,  Olov Karlsson

IPC分类号： D21C9/00 ,  D21J3/00

CPC分类号： D21J3/00 ,  D21C9/004

摘要： The invention concerns a process for the production of activated fibres or particles having self-binding properties comprising the steps of treating fibres or particles of lignocellulose containing material by contacting them with an oxidant during a time sufficient for the formation of water soluble reaction products with binding properties and retaining at least a significant part of said water soluble reaction products with the treated fibres or particles. The invention further concerns activated fibres or particles obtainable by the process, a press moulded product and a process for the production thereof from activated fibres or particles.

摘要翻译： 本发明涉及一种生产活性纤维或具有自结合性质的颗粒的方法，其包括以下步骤：通过在足以形成具有结合性的水溶性反应产物的时间内与氧化剂接触来处理含木素纤维素材料的纤维或颗粒 所述水溶性反应产物与所处理的纤维或颗粒保留至少大部分所述水溶性反应产物。 本发明还涉及通过该方法获得的活化纤维或颗粒，压制成型产品以及由活化的纤维或颗粒制备的方法。

公开(公告)号：US08854067B2

公开(公告)日：2014-10-07

申请号：US13594292

申请日：2012-08-24

申请人： Amol Joshi ,  Charlene Chen ,  John Foster ,  Zhendong Hong ,  Olov Karlsson ,  Bei Li ,  Dipankar Pramanik ,  Usha Raghuram ,  Mark Victor Raymond ,  Jingang Su ,  Bin Yang

发明人： Amol Joshi ,  Charlene Chen ,  John Foster ,  Zhendong Hong ,  Olov Karlsson ,  Bei Li ,  Dipankar Pramanik ,  Usha Raghuram ,  Mark Victor Raymond ,  Jingang Su ,  Bin Yang

IPC分类号： G01R27/08 ,  G01R31/28

CPC分类号： G01R27/08 ,  G01R31/2831 ,  H01L22/14 ,  H01L22/20

摘要： Methods and structures are described for determining contact resistivities and Schottky barrier heights for conductors deposited on semiconductor wafers that can be combined with combinatorial processing, allowing thereby numerous processing conditions and materials to be tested concurrently. Methods for using multi-ring as well as single-ring CTLM structures to cancel parasitic resistance are also described, as well as structures and processes for inline monitoring of properties.

摘要翻译： 描述了用于确定沉积在可与组合处理组合的半导体晶片上的导体的接触电阻率和肖特基势垒高度的方法和结构，从而允许同时测试许多处理条件和材料。 还描述了使用多环以及单环CTLM结构来消除寄生电阻的方法，以及用于在线监测性质的结构和方法。

公开(公告)号：US08635727B2

公开(公告)日：2014-01-28

申请号：US12734324

申请日：2008-10-23

申请人： Johan Dahlin ,  Claes Lindh ,  Olov Karlsson ,  Håkan Karlsson

发明人： Johan Dahlin ,  Claes Lindh ,  Olov Karlsson ,  Håkan Karlsson

IPC分类号： A47C23/04

CPC分类号： B62D33/0612 ,  B60N2/24 ,  B60N2/34 ,  B60P3/39

摘要： The present invention relates to a variable-size bed (10) comprising a mattress core (16) and a base (14), which base is adapted to support at least a portion of the mattress core, wherein the mattress core and base have adjustable widths or lengths and each of the mattress core and base is changeable between an expanded state and a contracted state corresponding to an expanded state and a contracted state of the bed, respectively, and wherein the bed further comprises a cover means adapted to provide covering over the mattress core in both the expanded state and the contracted state of the bed. The present invention also relates to a vehicle comprising such a variable-size bed.

摘要翻译： 本发明涉及一种包括床垫芯（16）和基座（14）的可变尺寸床（10），该基座适于支撑床垫芯的至少一部分，其中床垫芯和底座具有可调节 宽度或长度，并且床垫芯和基座中的每一个分别在对应于床的膨胀状态和收缩状态的膨胀状态和收缩状态之间是可变的，并且其中床还包括适于提供覆盖物的覆盖装置 床垫核心在扩张状态和床的合同状态。 本发明还涉及一种包括这种可变尺寸床的车辆。

公开(公告)号：US20130316472A1

公开(公告)日：2013-11-28

申请号：US13480023

申请日：2012-05-24

申请人： Amol Joshi ,  John Foster ,  Zhendong Hong ,  Olov Karlsson ,  Bei Li ,  Usha Raghuram

发明人： Amol Joshi ,  John Foster ,  Zhendong Hong ,  Olov Karlsson ,  Bei Li ,  Usha Raghuram

IPC分类号： H01L21/66

CPC分类号： H01L29/66181 ,  G01N27/002 ,  H01L22/14 ,  H01L22/20

摘要： Metal gate high-k capacitor structures with lithography patterning are used to extract gate work function using a combinatorial workflow. Oxide terracing, together with high productivity combinatorial process flow for metal deposition can provide optimum high-k gate dielectric and metal gate solutions for high performance logic transistors. The high productivity combinatorial technique can provide an evaluation of effective work function for given high-k dielectric metal gate stacks for PMOS and NMOS transistors, which is critical in identifying and selecting the right materials.

摘要翻译： 使用光刻图案化的金属栅极高k电容器结构使用组合工作流程提取门功函数。 氧化物梯田，以及用于金属沉积的高生产率组合工艺流程可为高性能逻辑晶体管提供最佳的高k栅介质和金属栅极解决方案。 高生产率组合技术可以为PMOS和NMOS晶体管的给定高k介质金属栅极叠层提供有效的工作函数的评估，这对于识别和选择正确的材料至关重要。

公开(公告)号：US20130115741A1

公开(公告)日：2013-05-09

申请号：US13292906

申请日：2011-11-09

申请人： Anh Duong ,  Olov Karlsson

发明人： Anh Duong ,  Olov Karlsson

IPC分类号： H01L21/336 ,  B08B7/00 ,  B08B3/08 ,  H01L21/28

CPC分类号： H01L21/02068 ,  C11D7/08 ,  C11D11/0047 ,  C11D11/007 ,  H01L21/28052 ,  H01L21/28518 ,  H01L29/665 ,  H01L29/66575 ,  H01L29/7848

摘要： The invention discloses a method for cleaning residues from a semiconductor substrate during a nickel platinum silicidation process, comprising using an aqua regia cleaning solution (comprising a mixture of nitric acid and hydrochloric acid) with microwave assisted heating. Low boiling temperature of hydrochloric acid prevents heating the aqua regia solution to a high temperature, impeding the effectiveness of post silicidation nickel and platinum residue removal. Therefore, embodiments of the invention provide a microwave assisted heating of the substrate in an aqua regia solution, selectively heating platinum residues without significantly increasing the temperature of the aqua regia solution, rendering platinum residues to be more soluble in aqueous solution and thereby dissolving it from the surface of the substrate.

摘要翻译： 本发明公开了一种在镍铂硅化过程中从半导体衬底中清除残留物的方法，其中包括使用王水清洗溶液（包括硝酸和盐酸的混合物）与微波辅助加热。 盐酸的低沸点温度可防止将王水溶液加热至高温，阻止后硅化镍和铂残渣去除的有效性。 因此，本发明的实施方案提供了在王水溶液中微波辅助加热底物，选择性地加热铂残余物而不显着提高王水溶液的温度，使铂残留物更易溶于水溶液，从而将其从 衬底的表面。

公开(公告)号：US08697573B2

公开(公告)日：2014-04-15

申请号：US13292906

申请日：2011-11-09

申请人： Anh Duong ,  Olov Karlsson

发明人： Anh Duong ,  Olov Karlsson

IPC分类号： H01L21/44

CPC分类号： H01L21/02068 ,  C11D7/08 ,  C11D11/0047 ,  C11D11/007 ,  H01L21/28052 ,  H01L21/28518 ,  H01L29/665 ,  H01L29/66575 ,  H01L29/7848

摘要： The invention discloses a method for cleaning residues from a semiconductor substrate during a nickel platinum silicidation process, comprising using an aqua regia cleaning solution (comprising a mixture of nitric acid and hydrochloric acid) with microwave assisted heating. Low boiling temperature of hydrochloric acid prevents heating the aqua regia solution to a high temperature, impeding the effectiveness of post silicidation nickel and platinum residue removal. Therefore, embodiments of the invention provide a microwave assisted heating of the substrate in an aqua regia solution, selectively heating platinum residues without significantly increasing the temperature of the aqua regia solution, rendering platinum residues to be more soluble in aqueous solution and thereby dissolving it from the surface of the substrate.

摘要翻译： 本发明公开了一种在镍铂硅化过程中从半导体衬底中清除残留物的方法，其中包括使用王水清洗溶液（包括硝酸和盐酸的混合物）与微波辅助加热。 盐酸的低沸点温度可防止将王水溶液加热至高温，阻止后硅化镍和铂残渣去除的有效性。 因此，本发明的实施方案提供了在王水溶液中微波辅助加热底物，选择性地加热铂残余物而不显着提高王水溶液的温度，使铂残留物更易溶于水溶液，从而将其从 衬底的表面。

公开(公告)号：US20130122670A1

公开(公告)日：2013-05-16

申请号：US13295333

申请日：2011-11-14

申请人： Anh Duong ,  John Foster ,  Olov Karlsson ,  James Mavrinac ,  Usha Raghuram

发明人： Anh Duong ,  John Foster ,  Olov Karlsson ,  James Mavrinac ,  Usha Raghuram

IPC分类号： H01L21/336 ,  B08B3/08 ,  H01L21/28

CPC分类号： H01L21/324 ,  H01L21/02068 ,  H01L21/28 ,  H01L21/28052 ,  H01L21/28518 ,  H01L21/67028 ,  H01L21/67057 ,  H01L29/665

摘要： The invention discloses a method for cleaning residues from a semiconductor substrate during a nickel platinum silicidation process. Post silicidation residues of nickel and platinum may not be removed adequately just by an aqua regia solution (comprising a mixture of nitric acid and hydrochloric acid). Therefore, embodiments of the invention provide a multi-step residue cleaning, comprising exposing the substrate to an aqua regia solution, followed by an exposure to a chlorine gas or a solution comprising dissolved chlorine gas, which may further react with remaining platinum residues, rendering it more soluble in aqueous solution and thereby dissolving it from the surface of the substrate.

摘要翻译： 本发明公开了一种在镍铂硅化过程中清除半导体衬底的残留物的方法。 镍和铂的后硅化残留物只能通过王水溶液（包括硝酸和盐酸的混合物）而被充分除去。 因此，本发明的实施方案提供多步残留物清洗，包括将底物暴露于王水溶液，随后暴露于氯气或包含溶解的氯气的溶液中，其可进一步与剩余的铂残基反应，使得 它更可溶于水溶液，从而从基底表面溶解。