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公开(公告)号：US10375329B2
公开(公告)日：2019-08-06
申请号：US15963410
申请日：2018-04-26
Inventor： Yasuo Miyake , Masashi Murakami , Tokuhiko Tamaki , Yoshiaki Satou
Abstract: An imaging device including: unit pixel cells each including a first electrode, a second electrode, a photoelectric conversion layer, a charge accumulation region connected to the first electrode, and a signal detection circuit connected to the charge accumulation region; and a voltage supply circuit connected to the second electrode, the voltage supply circuit supplying a first voltage to the second electrode in a first period, the voltage supply circuit supplying a second voltage that is different from the first voltage to the second electrode in a second period. Each unit pixel cells includes a reset transistor which switches between supply and cutoff of a reset voltage initializing the charge accumulation region, and a potential difference between the first electrode and the second electrode when the reset voltage is supplied is greater than a potential difference between the first electrode and the second electrode after the reset voltage is cut off.
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公开(公告)号：US10141354B2
公开(公告)日：2018-11-27
申请号：US14876500
申请日：2015-10-06
Inventor： Masayuki Takase , Takayoshi Yamada , Tokuhiko Tamaki
IPC: H04N5/335 , H01L27/146 , H04N5/378 , H04N5/353 , H01L27/30
Abstract: An imaging device, comprising: at least one unit pixel cell; and a voltage application circuit that generates at least two different voltages, each of the at least one unit pixel cell comprising: a photoelectric conversion layer having a first surface and a second surface being on a side opposite to the first surface, a pixel electrode located on the first surface, an auxiliary electrode located on the first surface, the auxiliary electrode being separated from the pixel electrode and electrically connected to the voltage application circuit, an upper electrode located on the second surface, the upper electrode opposing to the pixel electrode and the auxiliary electrode, a charge storage node electrically connected to the pixel electrode, and a charge detection circuit electrically connected to the charge storage node.
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公开(公告)号：US10057502B2
公开(公告)日：2018-08-21
申请号：US15442078
申请日：2017-02-24
Inventor： Tokuhiko Tamaki , Takeyoshi Tokuhara
IPC: H04N5/243 , H01L27/146 , H04N5/378 , H04N5/369
CPC classification number: H04N5/243 , H01L27/14612 , H01L27/14627 , H01L27/14636 , H01L27/14643 , H04N5/33 , H04N5/3698 , H04N5/378
Abstract: A photosensor includes a photoelectric converter including first and second electrodes and a photoelectric conversion layer therebetween; a transistor having a gate, a source and a drain; a connector electrically connecting the first electrode and the gate together; and one or more wiring layers including a part of the connector. The transistor outputs an electric signal from one of the source and the drain, the electric signal corresponding to a change in dielectric constant between the first electrode and the second electrode, the change being caused by incident light on the photoelectric conversion layer. The one or more wiring layers include a first line coupled to the one of the source and the drain and a second line supplied with a fixed voltage in a period during operation. A distance between the first line and the connector is less than a distance between the second line and the connector.
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公开(公告)号：US09887231B2
公开(公告)日：2018-02-06
申请号：US14555153
申请日：2014-11-26
Inventor： Kentaro Nakanishi , Junji Hirase , Kosaku Saeki , Yoshinori Takami , Takeshi Hidaka , Tokuhiko Tamaki
IPC: H01L27/146
CPC classification number: H01L27/14643 , H01L27/1461 , H01L27/14612 , H01L27/14689
Abstract: A solid-state imaging device includes unit pixels formed on a semiconductor substrate. Each of the unit pixels includes a photoelectric converter, a floating diffusion, a pinning layer, and a pixel transistor. The pixel transistor includes a gate electrode formed on the semiconductor substrate, a source diffusion layer, and a drain diffusion layer. At least one of the source diffusion layer or the drain diffusion layer functions as the floating diffusion. The pinning layer is covered by the floating diffusion at a bottom and a side at a channel of the pixel transistor. A conductivity type of the floating diffusion is opposite to that of the pinning layer.
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公开(公告)号：US09653510B2
公开(公告)日：2017-05-16
申请号：US14554450
申请日：2014-11-26
Inventor： Tokuhiko Tamaki , Hirohisa Ohtsuki , Ryohei Miyagawa , Motonori Ishii
IPC: H01L27/146 , H04N5/3745
CPC classification number: H01L27/14603 , H01L27/14609 , H01L27/14612 , H01L27/14636 , H01L27/14643 , H04N5/3698 , H04N5/3745
Abstract: A solid-state imaging device includes: pixels arranged in a matrix; a vertical signal line provided for each column, conveying a pixel signal; a power line provided for each column, proving a power supply voltage; and a feedback signal line provided for each column, conveying a signal from a peripheral circuit to a pixel, in which each of the pixels includes: an N-type diffusion layer; a photoelectric conversion element above the N-type diffusion layer; and a charge accumulation node between the N-type diffusion layer and the photoelectric conversion element, accumulating signal charge generated in the photoelectric conversion element, the feedback signal line, a metal line which is a part of the charge accumulation node, the vertical signal line, and the power line are disposed in a second interconnect layer, and the vertical signal line and the power line are disposed between the feedback signal line and the metal line.
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Patent Agency Ranking
公开(公告)号：US09602743B2
公开(公告)日：2017-03-21
申请号：US14878180
申请日：2015-10-08
Inventor： Takayoshi Yamada , Masayuki Takase , Tokuhiko Tamaki , Masashi Murakami
CPC classification number: H04N5/359 , H01L27/14603 , H01L27/14609 , H01L27/1461 , H01L27/14612 , H01L27/14623 , H01L27/14636 , H01L27/14645 , H01L27/14667 , H04N5/23232 , H04N5/265 , H04N5/357 , H04N5/361 , H04N5/374 , H04N5/378
Abstract: An imaging device comprises at least one unit pixel cell. Each of them comprises: a photoelectric conversion layer having a first and second surfaces; a pixel electrode and a shield electrode located on the first surface and separated from each other, a shield voltage being applied to the shield electrode; an upper electrode located on the second surface and opposing to the pixel electrode and the shield electrode, a counter voltage being applied to the upper electrode; a charge accumulation node electrically connected to the pixel electrode; and a charge detection circuit electrically connected to the charge accumulation node. The charge detection circuit includes a reset transistor that sets the pixel electrode at an initialization voltage at predetermined timing. An absolute value of a difference between the shield voltage and the counter voltage is larger than an absolute value of a difference between the initialization voltage and the counter voltage.
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公开(公告)号：US12022215B2
公开(公告)日：2024-06-25
申请号：US18180708
申请日：2023-03-08
Inventor： Kazuko Nishimura , Tokuhiko Tamaki , Masashi Murakami
IPC: H04N25/585 , H01L27/146 , H04N25/62 , H04N25/65 , H04N25/75 , H04N25/77 , H04N25/778
CPC classification number: H04N25/585 , H01L27/14614 , H01L27/14636 , H01L27/14643 , H04N25/62 , H04N25/65 , H04N25/75 , H04N25/77 , H04N25/778
Abstract: An imaging device including: a first imaging cell including a first photoelectric converter that generates a first signal; and a second imaging cell including: a second photoelectric converter that generates a second signal; and a capacitor having a first and second terminal, the first terminal electrically coupled to second photoelectric converter. An area of the first photoelectric converter is greater than an area of the second photoelectric converter in a plan view, the first imaging cell has a first number of saturation charges, and the second imaging cell has a second number of saturation charges, the first number of saturation charges is greater than the second number of saturation charges, and the capacitor has capacitance that causes the second number of saturation charges of the second imaging cell to become greater than the first number of saturation charges of the first imaging cell.
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公开(公告)号：US11849233B2
公开(公告)日：2023-12-19
申请号：US17496589
申请日：2021-10-07
Inventor： Tokuhiko Tamaki
IPC: H04N3/14 , H04N5/335 , H04N25/75 , H01L27/146 , H04N23/54 , H04N23/55 , H04N25/585 , H04N25/702
CPC classification number: H04N25/75 , H01L27/14627 , H04N23/54 , H04N23/55 , H04N25/585 , H04N25/702
Abstract: An imaging device includes: a first pixel including a first photoelectric converter that converts incident light into first signal charges, and a first charge storage node that accumulates the first signal charges; and a second pixel including a second photoelectric converter that converts incident light into second signal charges, and a second charge storage node that accumulates the second signal charges. An area of the second photoelectric converter is greater than an area of the first photoelectric converter in a plan view. Capacitance of the first charge storage node is greater than capacitance of the second charge storage node.
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公开(公告)号：US11647299B2
公开(公告)日：2023-05-09
申请号：US17508649
申请日：2021-10-22
Inventor： Yasuo Miyake , Masashi Murakami , Tokuhiko Tamaki , Yoshiaki Satou
IPC: H04N5/335 , H04N5/353 , H01L27/30 , H01L27/146
CPC classification number: H04N5/353 , H01L27/14609 , H01L27/14612 , H01L27/307
Abstract: An imaging device including pixels each including: a photoelectric converter including a first electrode, a second electrode, and a photoelectric conversion layer between the first electrode and the second electrode, the second electrode of each of the pixels being electrically connected to each other; and a transistor having a gate electrically connected to the first electrode. The imaging device further including voltage supply circuitry electrically connected to the second electrode, in which the voltage supply circuitry supplies a first voltage to the second electrode in an exposure period, the voltage supply circuitry supplies a second voltage to the second electrode in a non-exposure period, an a potential difference between the first electrode and the second electrode in the non-exposure period is less than a potential difference between the first electrode and the second electrode in the exposure period.
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公开(公告)号：US11184563B2
公开(公告)日：2021-11-23
申请号：US17026851
申请日：2020-09-21
Inventor： Yasuo Miyake , Masashi Murakami , Tokuhiko Tamaki , Yoshiaki Satou
IPC: H04N5/335 , H04N5/353 , H01L27/30 , H01L27/146
Abstract: An imaging device including pixels having a photoelectric converter including a first and second electrode, a photoelectric conversion layer; a charge accumulation region electrically connected to the first electrode; and a signal detection circuit. The photoelectric converter is applied with a voltage between the first electrode and the second electrode, and the photoelectric converter has a characteristic, responsive to the voltage within a range from a first voltage to a second voltage, showing that a density of current passing between the first electrode and the second electrode when light is incident on the photoelectric conversion layer becomes substantially equal to that when no light is incident on the photoelectric conversion layer. A difference between the first voltage and the second voltage is 0.5 V or more, and the voltage supply circuit supplies a voltage between the first voltage and the second voltage to the second electrode in a non-exposure period.
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