公开(公告)号：US20110209377A1

公开(公告)日：2011-09-01

申请号：US13105952

申请日：2011-05-12

申请人： Robert B. Davies

发明人： Robert B. Davies

IPC分类号： F41A3/12

CPC分类号： F41C23/16 ,  F41A3/94 ,  F41A5/18 ,  F41A5/28 ,  F41A29/02 ,  F41C23/04 ,  F41C23/06

摘要： A rifle with an upper receiver and a barrel attached to the upper receiver and including a bolt carrier, and operating, buffer, and cooling systems. The operating system includes a cylinder and a piston coupled to receive propelling gases from the barrel. As the piston moves between retracted and extended positions the bolt carrier is moved between closed and open positions. The bolt carrier includes a weight movable within a guide frame between rearward and forward limits. The buffer system includes a compression spring in a tube attached to the upper receiver in abutting engagement with the bolt carrier. A partially fluid filled cylinder is attached to a coil of the spring and includes a piston and shaft. The piston is formed so that fluid in the cylinder restricts movement in one direction and allows free movement in a second direction.

摘要翻译： 具有上接收器和连接到上接收器的筒的步枪，包括螺栓托架以及操作，缓冲和冷却系统。 操作系统包括一个气缸和活塞，其连接以接收来自该桶的推进气体。 当活塞在缩回位置和延伸位置之间移动时，螺栓承载件在关闭位置和打开位置之间移动。 螺栓承载件包括可在向后和向前限制之间的引导框架内移动的重物。 该缓冲系统包括一个压缩弹簧，该压缩弹簧连接到上部接收器上，与该螺栓承载件邻接。 部分流体填充的圆筒附接到弹簧的线圈并且包括活塞和轴。 活塞被形成为使得气缸中的流体限制在一个方向上的移动并允许在第二方向上的自由运动。

公开(公告)号：US07963203B1

公开(公告)日：2011-06-21

申请号：US12882343

申请日：2010-09-15

申请人： Robert B. Davies

发明人： Robert B. Davies

IPC分类号： F41A13/12

CPC分类号： F41C23/16 ,  F41A3/94 ,  F41A5/18 ,  F41A5/28 ,  F41A29/02 ,  F41C23/04 ,  F41C23/06

摘要： A rifle with an upper receiver and a barrel attached to the upper receiver and including a bolt carrier, and operating, buffer, and cooling systems. The operating system includes a cylinder and a piston coupled to receive propelling gases from the barrel. As the piston moves between retracted and extended positions the bolt carrier is moved between closed and open positions. The bolt carrier includes a weight movable within a guide frame between rearward and forward limits. The buffer system includes a compression spring in a tube attached to the upper receiver in abutting engagement with the bolt carrier. A partially fluid filled cylinder is attached to a coil of the spring and includes a piston and shaft. The piston is formed so that fluid in the cylinder restricts movement in one direction and allows free movement in a second direction.

公开(公告)号：US07832323B1

公开(公告)日：2010-11-16

申请号：US11962412

申请日：2007-12-21

申请人： Robert B. Davies

发明人： Robert B. Davies

IPC分类号： F41A21/34

CPC分类号： F41A21/34 ,  F41A21/30 ,  F41A21/325

摘要： A suppressor for use with a firearm having a barrel with a muzzle and a bore, the suppressor includes an outer casing having a rearward end and a forward end, an evacuator assembly for receiving the muzzle of the firearm carried by the outer casing, and an expansion chamber defined between the outer casing and the evacuator assembly in gaseous communication with an interior volume of the evacuator assembly.

摘要翻译： 一种用于具有枪口和枪口的枪支的抑制器，所述抑制器包括具有后端和前端的外壳，用于容纳由所述外壳承载的枪支的枪口的抽风机组件，以及 膨胀室限定在外壳和抽气机组件之间，与抽气机组件的内部容积气态连通。

公开(公告)号：US07363741B2

公开(公告)日：2008-04-29

申请号：US11174270

申请日：2005-06-29

申请人： Frank DeSomma ,  Robert B. Davies

发明人： Frank DeSomma ,  Robert B. Davies

IPC分类号： F41G1/16

CPC分类号： F41G11/003 ,  F41C23/16

摘要： A hand guard assembly for a firearm including a barrel. The assembly includes a tubular unitary body mounted to surround a portion of the barrel substantially coaxially and in a transversely spaced relationship. The tubular body includes a plurality of air flow openings formed therethrough and at least one of a top rail formed as a unitary portion of the tubular body and extending rearwardly along an upper portion of a receiver of the firearm, side accessory rails formed as a unitary portion of the tubular body and on opposed sides of the tubular body, and a bottom accessory rail formed as a unitary portion of the tubular body and on a bottom surface of the tubular body. In the preferred method of fabricating the assembly, the body and any include accessory rails are extruded.

摘要翻译： 用于包括枪管的枪支的护手组件。 该组件包括一个管状整体，其安装成围绕筒的一部分基本同轴并以横向间隔的关系。 管状体包括多个通过其形成的空气流动开口，以及形成为管状体的整体部分的顶部轨道中的至少一个，并且沿着枪械的接收器的上部向后延伸，侧部辅助导轨形成为整体 管状体的一部分和管状体的相对侧，以及形成为管状体的整体部分和管状体的底表面的底部辅助轨道。 在制造组件的优选方法中，主体和任何包括的附件轨道被挤压。

公开(公告)号：US07202152B2

公开(公告)日：2007-04-10

申请号：US11170877

申请日：2005-07-28

申请人： Robert B. Davies

发明人： Robert B. Davies

IPC分类号： H01L21/44 ,  H01L29/00

CPC分类号： H01L28/10 ,  H01L21/764 ,  H01L27/0617 ,  H01L27/08

摘要： An integrated circuit (10) includes a semiconductor substrate (11) that has a top surface (32) for forming a dielectric region (14) with a trench (40) and one or more adjacent cavities (16). A conductive material such as copper is disposed within the trench to produce an inductor (50). A top surface (49) of the inductor is substantially coplanar with an interconnect surface (31) of the semiconductor substrate, which facilitates connecting to the inductor with standard integrated circuit metallization (57).

摘要翻译： 集成电路（10）包括具有用于形成具有沟槽（40）和一个或多个相邻空腔（16）的电介质区域（14）的顶表面（32）的半导体衬底（11）。 诸如铜的导电材料设置在沟槽内以产生电感器（50）。 电感器的顶表面（49）与半导体衬底的互连表面（31）基本上共面，这便于利用标准集成电路金属化（57）连接到电感器。

公开(公告)号：US5808362A

公开(公告)日：1998-09-15

申请号：US609251

申请日：1996-02-29

申请人： Robert B. Davies ,  Andreas A. Wild ,  Peter J. Zdebel

发明人： Robert B. Davies ,  Andreas A. Wild ,  Peter J. Zdebel

IPC分类号： H01L21/336 ,  H01L21/8234 ,  H01L29/06 ,  H01L29/10 ,  H01L29/417 ,  H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L29/41775 ,  H01L21/8234 ,  H01L29/0653 ,  H01L29/1083 ,  H01L29/1087 ,  H01L29/41783 ,  H01L29/66621 ,  H01L29/665 ,  H01L29/66537

摘要： A graded-channel semiconductor device (10) is formed in a pedestal (12). The pedestal (12) is formed on a substrate (11) and improves the electrical characteristics of the device (10) compared to conventional device structures. The pedestal (12) has sides (13) that are bordered by a first dielectric layer (24) to provide electrical isolation. An interconnect structure (90) can be optionally formed in conjunction with the formation of the device (10). The interconnect structure (90) has a plurality of conductors (60,97) that can be used to transport electrical signals across the device (10).

摘要翻译： 梯形通道半导体器件（10）形成在基座（12）中。 与传统的装置结构相比，底座（12）形成在基板（11）上并改善了装置（10）的电气特性。 基座（12）具有由第一介电层（24）邻接以提供电隔离的侧面（13）。 互连结构（90）可以可选地与装置（10）的形成一起形成。 互连结构（90）具有多个导体（60,97），其可用于传输跨越设备（10）的电信号。

公开(公告)号：US5612244A

公开(公告)日：1997-03-18

申请号：US408657

申请日：1995-03-21

申请人： Robert B. Davies ,  Andreas A. Wild

发明人： Robert B. Davies ,  Andreas A. Wild

IPC分类号： H01L21/28 ,  H01L21/336 ,  H01L21/8238 ,  H01L29/423 ,  H01L21/265 ,  H01L21/70 ,  H01L27/00

CPC分类号： H01L29/42368 ,  H01L21/823807 ,  H01L21/823828 ,  H01L29/66659 ,  H01L21/28167

摘要： An insulated gate field effect transistor (10) having an reduced gate to drain capacitance and a method of manufacturing the field effect transistor (10). A dopant well (13) is formed in a semiconductor substrate (11). A gate oxide layer (26) is formed on the dopant well (13) wherein the gate oxide layer (26) and a gate structure (41) having a gate contact portion (43) and a gate extension portion (44). The gate contact portion (43) permits electrical contact to the gate structure (41), whereas the gate extension portion (44) serves as the active gate portion. A portion of the gate oxide (26) adjacent the gate contact portion (43) is thickened to lower a gate to drain capacitance of the field effect transistor (10) and thereby increase a bandwidth of the insulated gate field effect transistor (10).

摘要翻译： 具有减小的栅极 - 漏极电容的绝缘栅场效应晶体管（10）和制造场效应晶体管（10）的方法。 掺杂剂阱（13）形成在半导体衬底（11）中。 栅极氧化物层（26）形成在掺杂剂阱（13）上，其中栅极氧化物层（26）和具有栅极接触部分（43）和栅极延伸部分（44）的栅极结构（41）。 栅极接触部分（43）允许与栅极结构（41）的电接触，而栅极延伸部分（44）用作有源栅极部分。 与栅极接触部分（43）相邻的栅极氧化物（26）的一部分被加厚以降低场效应晶体管（10）的栅极到漏极电容，从而增加绝缘栅极场效应晶体管（10）的带宽。

公开(公告)号：US5155052A

公开(公告)日：1992-10-13

申请号：US715286

申请日：1991-06-14

申请人： Robert B. Davies

发明人： Robert B. Davies

IPC分类号： H01L21/336

摘要： A method for making a vertical field effect transistor with improved commutating safe operating area is provided a sidewall spacer is formed around a polysilicon gate, and used as a mask for the formation of a low resistivity region. The low resistivity region is formed underneath a source region and extends laterally to within a few thousand angstroms of the lateral boundary of the source region. A central portion of the source region is subsequently removed exposing a portion of the underlying low resistivity region and a source electrode is formed in contact with the exposed low resistivity region and the source region.

摘要翻译： 提供一种用于制造具有改善的换向安全操作区域的垂直场效应晶体管的方法，在多晶硅栅极周围形成侧壁间隔物，并用作形成低电阻率区域的掩模。 低电阻率区域形成在源极区域下方并且横向延伸到源极区域的横向边界的几千埃内。 源区域的中心部分随后被去除暴露下面的低电阻率区域的一部分，并且源极电极形成为与暴露的低电阻率区域和源极区域接触。

公开(公告)号：US5077594A

公开(公告)日：1991-12-31

申请号：US494652

申请日：1990-03-16

申请人： Lowell E. Clark ,  Robert B. Davies ,  Bernard W. Boland

发明人： Lowell E. Clark ,  Robert B. Davies ,  Bernard W. Boland

IPC分类号： H01L21/76 ,  H01L29/08 ,  H01L29/10

CPC分类号： H01L29/107 ,  H01L21/76 ,  H01L29/0821

摘要： Integrated high voltage transistors having minimum transistor to transistor crosstalk are fabricated in refilled epitaxial tubs, which are formed in a heavily doped substrate. The heavily doped substrate provides the isolation between each transistor, and thus provides for minimum transistor to transistor crosstalk. The voltage capability of the transistor is increased by forming the base surrounding the collector contact in the refilled epitaxial tub.

摘要翻译： 具有最小晶体管至晶体管串扰的集成高压晶体管在重新填充的外延阱中制造，其形成于重掺杂的衬底中。 重掺杂衬底提供每个晶体管之间的隔离，从而提供最小的晶体管到晶体管的串扰。 通过在再填充的外延阱中形成围绕集电极触点的基极来增加晶体管的电压能力。

公开(公告)号：US4521799A

公开(公告)日：1985-06-04

申请号：US453405

申请日：1982-12-27

申请人： Robert B. Davies

发明人： Robert B. Davies

IPC分类号： H01L23/535 ,  H01L29/72

CPC分类号： H01L23/535 ,  H01L2924/0002 ,  H01L2924/3011

摘要： A low impedance crossunder region is formed of a low resistivity emitter diffusion within a base region of an active device which extends beneath a portion of a metallization pattern to be crossed. The low resistivity crossunder diffusion is shorted to the base region in order to prevent transistor action between the crossunder region and the base region in contrast with other emitter diffusions within the base region which form diode junctions with the base region.

摘要翻译： 低阻抗交叉区域由有源器件的基极区域内的低电阻率发射极扩散形成，该有源器件的底部区域在要交叉的金属化图案的一部分之下延伸。 与基极区域形成二极管结的基极区域内的其他发射极扩散相比，低电阻率杂散扩散与基极区域短路，以防止跨区域与基极区域之间的晶体管作用。