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21.发明授权Apparatus and method for detecting a target environmental variable that employs film-bulk acoustic wave resonator oscillators 有权用于检测使用膜 - 体声波谐振器振荡器的目标环境变量的装置和方法公开(公告)号：US07358651B2
公开(公告)日：2008-04-15
申请号：US11109108
申请日：2005-04-18
IPC分类号： H01L41/08
CPC分类号： G01K11/265 , G01L1/165 , G01L9/0025 , H03H9/0542
摘要： An apparatus and method for detecting a target environmental variable (TEV). A first film-bulk acoustic resonator (FBAR) oscillator that includes a first FBAR with a first response to the target environmental variable generates a first frequency. A second film-bulk acoustic resonator (FBAR) oscillator that includes a second FBAR with a second response to the target environmental variable generates a second frequency. A circuit that is coupled to the first FBAR oscillator and the second FBAR oscillator determines the target environmental variable (e.g., changes in the TEV) based on the first frequency and the second frequency.
摘要翻译： 一种用于检测目标环境变量（TEV）的装置和方法。 包括对目标环境变量具有第一响应的第一FBAR的第一薄膜体声波谐振器（FBAR）振荡器产生第一频率。 包括具有对目标环境变量的第二响应的第二FBAR的第二薄膜 - 体声波谐振器（FBAR）振荡器产生第二频率。 耦合到第一FBAR振荡器和第二FBAR振荡器的电路基于第一频率和第二频率来确定目标环境变量（例如，TEV的变化）。
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公开(公告)号：US07038559B2
公开(公告)日：2006-05-02
申请号：US10785525
申请日：2004-02-23
CPC分类号： H03H9/605 , H03H9/587 , H03H9/60 , Y10T29/42 , Y10T29/49005 , Y10T29/49155
摘要： An apparatus including vertically separated acoustic resonators are disclosed. The apparatus includes a first acoustic resonator on a substrate and a second acoustic resonator vertically separated above the first acoustic resonator. Because the resonators are vertically separated above another, total area required to implement the resonators is reduced thereby savings in die size and cost are realized. The vertically separated resonators are supported by standoffs that are fabricated on the substrate, or on a resonator.
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23.发明授权Method for controlling piezoelectric coupling coefficient in film bulk acoustic resonators and apparatus embodying the method 失效用于控制膜体声波谐振器中的压电耦合系数的方法和体现该方法的装置公开(公告)号：US06954121B2
公开(公告)日：2005-10-11
申请号：US10457737
申请日：2003-06-09
CPC分类号： H03H9/173 , H03H3/04 , H03H9/02149
摘要： An apparatus such as a thin film resonator has a bottom electrode, a top electrode, and a composite layer between the two electrodes. The composite layer includes a piezoelectric (PZ) layer having a first coupling coefficient and a coupling coefficient control (CCC) layer having a second coupling coefficient. By varying the relative thicknesses of the PZ layer and the CCC layer during the manufacturing process, the coupling coefficient of the resonator can be established (to any value between the first coupling coefficient and the second coupling coefficient) with minimal impact on resonant frequency. Further, it is relatively less difficult to fabricate the PZ layer and the CCC layer having the desired coupling coefficient (as a combination of the first coupling coefficient and the second coupling coefficient) compared to the difficulties of fabrication of a uniform PZ layer having the desired coupling coefficient.
摘要翻译： 诸如薄膜谐振器的装置在两个电极之间具有底电极，顶电极和复合层。 复合层包括具有第一耦合系数的压电（PZ）层和具有第二耦合系数的耦合系数控制（CCC）层。 通过在制造过程中改变PZ层和CCC层的相对厚度，可以以对谐振频率的最小影响来建立谐振器的耦合系数（在第一耦合系数和第二耦合系数之间的任何值）。 此外，制造具有期望的耦合系数（作为第一耦合系数和第二耦合系数的组合）的PZ层和CCC层相对于制造具有期望的均匀PZ层的困难相对较难， 耦合系数。
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24.发明授权公开(公告)号：US08796904B2
公开(公告)日：2014-08-05
申请号：US13286051
申请日：2011-10-31
CPC分类号： H03H9/587 , H03H9/02015 , H03H9/132 , H03H9/173 , H03H9/584
摘要： In a representative embodiment, a bulk acoustic wave (BAW) resonator, comprises: a first electrode disposed over a substrate; a first piezoelectric layer disposed over the first electrode, the first piezoelectric layer having a first c-axis oriented along a first direction; a second electrode disposed over the first piezoelectric layer; and a second piezoelectric layer disposed over the first electrode and adjacent to the first piezoelectric layer, wherein the second piezoelectric layer has a second c-axis oriented in a second direction that is substantially antiparallel to the first direction.
摘要翻译： 在代表性实施例中，体声波（BAW）谐振器包括：设置在基板上的第一电极; 设置在所述第一电极上的第一压电层，所述第一压电层具有沿着第一方向取向的第一c轴; 设置在所述第一压电层上的第二电极; 以及第二压电层，其设置在所述第一电极上并且邻近所述第一压电层，其中所述第二压电层具有在与所述第一方向基本上反平行的第二方向上定向的第二c轴。
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公开(公告)号：US07615833B2
公开(公告)日：2009-11-10
申请号：US10890343
申请日：2004-07-13
申请人： John D. Larson, III , Qing Bai , Farid Matta , Tracy Verhoeven
发明人： John D. Larson, III , Qing Bai , Farid Matta , Tracy Verhoeven
IPC分类号： H01L41/00
CPC分类号： H03H9/105 , H03B5/326 , H03H3/02 , H03H9/0547 , H03H9/706
摘要： A microfabricated device has a first substrate, a second substrate, a film bulk acoustic resonator (FBAR) device, and a circuit. The second substrate is bonded to the first substrate to define a chamber. The FBAR device is located on a surface of the first substrate and inside the chamber. The circuit is located on a surface of the second substrate and inside the chamber. An electrical connection connects the circuit and the FBAR device.
摘要翻译： 微加工装置具有第一基板，第二基板，薄膜体声波谐振器（FBAR）装置和电路。 第二基板被结合到第一基板以限定室。 FBAR装置位于第一基板的表面和室内。 电路位于第二基板的表面和室内。 电气连接连接电路和FBAR设备。
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公开(公告)号：US07408428B2
公开(公告)日：2008-08-05
申请号：US10977398
申请日：2004-10-29
申请人： John D. Larson, III
发明人： John D. Larson, III
摘要： The temperature-compensated film bulk acoustic resonator (FBAR) device comprises an FBAR stack. The FBAR stack comprises an FBAR and a temperature-compensating element. The FBAR is characterized by a resonant frequency having a temperature coefficient, and comprises opposed planar electrodes and a piezoelectric element between the electrodes. The piezoelectric element has a temperature coefficient on which the temperature coefficient of the resonant frequency depends at least in part. The temperature-compensating element has a temperature coefficient opposite in sign to the temperature coefficient of the piezoelectric element.
摘要翻译： 温度补偿膜体声波谐振器（FBAR）装置包括FBAR堆叠。 FBAR堆叠包括一个FBAR和一个温度补偿元件。 FBAR的特征在于具有温度系数的谐振频率，并且包括相对的平面电极和电极之间的压电元件。 压电元件具有温度系数，谐振频率的温度系数至少部分地取决于该温度系数。 温度补偿元件具有与压电元件的温度系数相符的温度系数。
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公开(公告)号：US07367095B2
公开(公告)日：2008-05-06
申请号：US11404403
申请日：2006-04-14
CPC分类号： H03H9/605 , H03H9/132 , H03H9/584 , H03H9/587 , Y10T29/42 , Y10T29/4902 , Y10T29/49128 , Y10T29/49155
摘要： Embodiments of an acoustically-coupled transformer have a first stacked bulk acoustic resonator (SBAR) and a second SBAR. Each of the SBARs has a lower film bulk acoustic resonator (FBAR) and an upper FBAR, and an acoustic decoupler between the FBARs. The upper FBAR is stacked atop the lower FBAR. Each FBAR has opposed planar electrodes and a piezoelectric element between the electrodes. The piezoelectric element is characterized by a c-axis. The c-axes of the piezoelectric elements of the lower FBARs are opposite in direction, and the c-axes of the piezoelectric elements of the upper FBARs are opposite in direction. The transformer additionally has a first electrical circuit connecting the lower FBAR of the first SBAR to the lower FBAR of the second SBAR, and a second electrical circuit connecting the upper FBAR of the first SBAR to the upper FBARs of the second SBAR.
摘要翻译： 声耦合变压器的实施例具有第一层叠体声波谐振器（SBAR）和第二SBAR。 每个SBAR具有较低的膜体声波谐振器（FBAR）和上部FBAR，以及FBAR之间的声学解耦器。 上部FBAR堆叠在较低FBAR的顶部。 每个FBAR具有相对的平面电极和电极之间的压电元件。 压电元件的特征在于c轴。 下FBAR的压电元件的c轴方向相反，上FBAR的压电元件的c轴方向相反。 变压器还具有将第一SBAR的下FBAR连接到第二SBAR的下FBAR的第一电路和将第一SBAR的上FBAR连接到第二SBAR的上FBAR的第二电路。
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28.发明授权Film acoustically-coupled transformers with two reverse c-axis piezoelectric elements 有权具有两个反向c轴压电元件的薄膜声耦合变压器公开(公告)号：US07091649B2
公开(公告)日：2006-08-15
申请号：US10836663
申请日：2004-04-29
IPC分类号： H01L41/08
CPC分类号： H03H9/605 , H01L2224/48091 , H01L2224/49175 , H03H9/132 , H03H9/584 , H03H9/587 , Y10T29/42 , H01L2924/00014
摘要： Embodiments of an acoustically-coupled transformer have a first stacked bulk acoustic resonator (SBAR) and a second SBAR. Each of the SBARs has a lower film bulk acoustic resonator (FBAR) and an upper FBAR, and an acoustic decoupler between the FBARs. The upper FBAR is stacked atop the lower FBAR. Each FBAR has opposed planar electrodes and a piezoelectric element between the electrodes. The piezoelectric element is characterized by a c-axis. The c-axes of the piezoelectric elements of the lower FBARs are opposite in direction, and the c-axes of the piezoelectric elements of the upper FBARs are opposite in direction. The transformer additionally has a first electrical circuit connecting the lower FBAR of the first SBAR to the lower FBAR of the second SBAR, and a second electrical circuit connecting the upper FBAR of the first SBAR to the upper FBARs of the second SBAR.
摘要翻译： 声耦合变压器的实施例具有第一层叠体声波谐振器（SBAR）和第二SBAR。 每个SBAR具有较低的膜体声波谐振器（FBAR）和上部FBAR，以及FBAR之间的声学解耦器。 上部FBAR堆叠在较低FBAR的顶部。 每个FBAR具有相对的平面电极和电极之间的压电元件。 压电元件的特征在于c轴。 下FBAR的压电元件的c轴方向相反，上FBAR的压电元件的c轴方向相反。 变压器还具有将第一SBAR的下FBAR连接到第二SBAR的下FBAR的第一电路和将第一SBAR的上FBAR连接到第二SBAR的上FBAR的第二电路。
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公开(公告)号：US4404489A
公开(公告)日：1983-09-13
申请号：US203409
申请日：1980-11-03
IPC分类号： H01L41/047 , H01L41/22 , H04R1/06 , H04R17/00
CPC分类号： H04R17/00 , H01L41/0475 , H01L41/29 , Y10T29/42 , Y10T29/4913
摘要： A method is provided to connect individual conductive traces to an array of individual piezoelectric elements by bonding a flexible circuit board containing conductive traces to the piezoelectric elements. The resultant bonded elements provide an array for an acoustic transducer.
摘要翻译： 提供一种方法，通过将包含导电迹线的柔性电路板结合到压电元件来将各个导电迹线连接到各个压电元件的阵列。 所得到的粘合元件提供用于声学换能器的阵列。
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公开(公告)号：US07852644B2
公开(公告)日：2010-12-14
申请号：US12272742
申请日：2008-11-17
申请人： John D. Larson, III
发明人： John D. Larson, III
CPC分类号： H02M7/08 , H01L41/107 , H02M7/103
摘要： An AC-DC power converter is composed of AC input, a first rectifying circuit, a second rectifying circuit, a DC-DC converter and a DC output. The DC-DC converter has a DC input. The first rectifying circuit and the second rectifying circuit are connected in parallel between the AC input and the DC input of the DC-DC converter. At least one of the rectifying circuits comprises a phase shifting element that provides a phase shift at the AC line frequency.
摘要翻译： AC-DC电力转换器由AC输入，第一整流电路，第二整流电路，DC-DC转换器和DC输出组成。 DC-DC转换器具有直流输入。 第一整流电路和第二整流电路并联在DC-DC转换器的AC输入端和DC输入端之间。 整流电路中的至少一个包括在AC线路频率处提供相移的相移元件。
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