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    Method of processing a workpiece in a plasma reactor employing a dynamically adjustable plasma source power applicator
    27.
    发明申请
    Method of processing a workpiece in a plasma reactor employing a dynamically adjustable plasma source power applicator 有权
    使用动态可调的等离子体源功率施加器在等离子体反应器中处理工件的方法

    公开(公告)号：US20070257009A1

    公开(公告)日：2007-11-08

    申请号：US11416801

    申请日：2006-05-03

    申请人： Madhavi Chandrachood ,  Richard Lewington ,  Darin Bivens ,  Ajay Kumar ,  Ibrahim Ibrahim ,  Michael Grimbergen ,  Renee Koch ,  Sheeba Panayil

    发明人： Madhavi Chandrachood ,  Richard Lewington ,  Darin Bivens ,  Ajay Kumar ,  Ibrahim Ibrahim ,  Michael Grimbergen ,  Renee Koch ,  Sheeba Panayil

    IPC分类号： C23F1/00

    CPC分类号： H01J37/321 ,  H01L21/67069

    摘要： A method for processing a workpiece in a plasma reactor chamber having radially inner and outer source power applicators at a ceiling of the chamber facing the workpiece, the inner and outer source power applicators and the workpiece sharing a common axis of symmetry. The method includes applying RF source power to the source power applicator, and introducing a process gas into the reactor chamber so as to carry out a plasma process on the workpiece characterized by a plasma process parameter, the plasma process parameter having a spatial distribution across the surface of the workpiece. The method further includes rotating at least the outer RF source power applicator about a radial tilt axis to a position at which the spatial distribution of the plasma process parameter has at least a nearly minimal non-symmetry relative to the common axis of symmetry, and translating the inner source power applicator relative to the outer source power applicator along the axis of symmetry to a location at which the spatial distribution has at least a nearly minimal non-uniformity across the surface of the workpiece.

    摘要翻译： 一种用于在等离子体反应器室中处理工件的方法，该等离子体反应器腔室具有径向内部和外部源功率施加器，位于腔室的面向工件的顶板处，内部和外部源功率施加器和工件共享公共对称轴线。 该方法包括将RF源功率应用于源功率施加器，以及将工艺气体引入反应室，以便在工件上进行等离子体处理，其特征在于等离子体工艺参数，等离子体工艺参数具有横跨 工件表面。 该方法还包括至少将外部RF源功率施加器围绕径向倾斜轴线旋转到等离子体处理参数的空间分布相对于公共对称轴线具有至少几乎最小的非对称性的位置，并且平移 所述内源电源施加器相对于所述外源功率施加器沿着所述对称轴线到所述空间分布在所述工件的所述表面上具有至少几乎最小不均匀性的位置。

    Mask etch plasma reactor with backside optical sensors and multiple frequency control of etch distribution
    28.
    发明申请
    Mask etch plasma reactor with backside optical sensors and multiple frequency control of etch distribution 审中-公开
    具有背面光学传感器的掩模蚀刻等离子体反应器和蚀刻分布的多次频率控制

    公开(公告)号：US20080099450A1

    公开(公告)日：2008-05-01

    申请号：US11589343

    申请日：2006-10-30

    申请人： Richard Lewington ,  Alexander Paterson ,  Michael N. Grimbergen ,  Ajay Kumar

    发明人： Richard Lewington ,  Alexander Paterson ,  Michael N. Grimbergen ,  Ajay Kumar

    IPC分类号： H01L21/3065

    CPC分类号： H01J37/32935 ,  H01J37/32091 ,  H01J37/321 ,  H01J37/32165 ,  H01J37/3299

    摘要： A plasma reactor is provided having multiple frequency control of etch parameters. The reactor includes a reactor chamber and a workpiece support within the chamber, the chamber having a ceiling facing the workpiece support, and an inductively coupled source power applicator and a capacitively coupled plasma source power applicator. An array of optical fibers extends through the support surface of the workpiece support to view the workpiece through its bottom surface. Optical sensors are coupled to the output ends of the optical fibers. The reactor further includes a controller responsive to the optical sensors for adjusting the relative amounts of power simultaneously coupled to plasma in the chamber by the inductively coupled plasma source power applicator and the capacitively coupled plasma source power applicator.

    摘要翻译： 提供具有对蚀刻参数进行多次频率控制的等离子体反应器。 反应器包括反应室和腔室内的工件支撑件，腔室具有面向工件支撑件的天花板，以及电感耦合源功率施加器和电容耦合等离子体源功率施加器。 光纤阵列延伸穿过工件支撑件的支撑表面，以通过其底部表面观察工件。 光学传感器耦合到光纤的输出端。 反应器还包括响应于光学传感器的控制器，用于通过电感耦合等离子体源功率施加器和电容耦合的等离子体源功率施加器来调节同时耦合到腔室中的等离子体的功率的相对量。

    Plasma reactor with a dynamically adjustable plasma source power applicator
    29.
    发明申请
    Plasma reactor with a dynamically adjustable plasma source power applicator 有权
    具有动态可调等离子体源功率施加器的等离子体反应器

    公开(公告)号：US20070256787A1

    公开(公告)日：2007-11-08

    申请号：US11416802

    申请日：2006-05-03

    申请人： Madhavi Chandrachood ,  Richard Lewington ,  Darin Bivens ,  Ajay Kumar ,  Ibrahim Ibrahim ,  Michael Grimbergen ,  Renee Koch ,  Sheeba Panayil

    发明人： Madhavi Chandrachood ,  Richard Lewington ,  Darin Bivens ,  Ajay Kumar ,  Ibrahim Ibrahim ,  Michael Grimbergen ,  Renee Koch ,  Sheeba Panayil

    IPC分类号： C23F1/00

    CPC分类号： H01J37/321 ,  H01L21/67069

    摘要： A plasma reactor for processing a workpiece includes a process chamber having an enclosure including a ceiling and having a vertical axis of symmetry generally perpendicular to the ceiling, a workpiece support pedestal inside the chamber and generally facing the ceiling, process gas injection apparatus coupled to the chamber and a vacuum pump coupled to the chamber. The reactor further includes a plasma source power applicator overlying the ceiling and having a radially inner applicator portion and a radially outer applicator portion, and RF power apparatus coupled to the inner and outer applicator portions, and tilt apparatus supporting at least the outer applicator portion and capable of tilting at least the outer applicator portion about a radial axis perpendicular to the axis of symmetry and capable of rotating at least the outer applicator portion about the axis of symmetry. The reactor can further include elevation apparatus for changing the location of the inner and outer portions relative to one another along the vertical axis of symmetry. In a preferred embodiment, the elevation apparatus includes a lift actuator for raising and lowering the inner applicator portion along the vertical axis of symmetry.

    摘要翻译： 用于处理工件的等离子体反应器包括处理室，其具有包括天花板的外壳，其具有垂直于天花板的垂直对称轴线，腔室内的工件支撑基座和大体上面对天花板的工艺气体注入装置， 腔室和耦合到腔室的真空泵。 反应器还包括覆盖天花板并具有径向内部施加器部分和径向外部施加器部分的等离子体源功率施加器，以及耦合到内部和外部施加器部分的RF功率设备，以及至少支撑外部施加器部分和 能够使至少外部施加部分围绕垂直于对称轴线的径向轴线倾斜，并且能够使至少外部施加器部分围绕对称轴线旋转。 反应器可以进一步包括升高装置，用于沿垂直对称轴线相对于彼此改变内部和外部部分的位置。 在优选实施例中，升降装置包括用于沿着垂直对称轴升高和降低内部施加器部分的升降致动器。

    Plasma reactor with apparatus for dynamically adjusting the plasma source power applicator and the workpiece relative to one another
    30.
    发明申请
    Plasma reactor with apparatus for dynamically adjusting the plasma source power applicator and the workpiece relative to one another 有权
    一种具有用于相对于彼此动态地调节等离子体源功率施加器和工件的装置的等离子体反应器

    公开(公告)号：US20070256784A1

    公开(公告)日：2007-11-08

    申请号：US11416547

    申请日：2006-05-03

    申请人： Madhavi Chandrachood ,  Richard Lewington ,  Darin Bivens ,  Ajay Kumar ,  Ibrahim Ibrahim ,  Michael Grimbergen ,  Renee Koch ,  Sheeba Panayil

    发明人： Madhavi Chandrachood ,  Richard Lewington ,  Darin Bivens ,  Ajay Kumar ,  Ibrahim Ibrahim ,  Michael Grimbergen ,  Renee Koch ,  Sheeba Panayil

    IPC分类号： H01L21/306 ,  C23F1/00

    CPC分类号： H01J37/321 ,  H01L21/68764

    摘要： A plasma reactor for processing a workpiece includes a process chamber comprising an enclosure including a ceiling and having a vertical axis of symmetry generally perpendicular to said ceiling, a workpiece support pedestal inside the chamber and generally facing the ceiling, process gas injection apparatus coupled to the chamber and a vacuum pump coupled to the chamber. The reactor further includes a plasma source power applicator overlying the ceiling and comprising a radially inner applicator portion and a radially outer applicator portion, and RF power apparatus coupled to said inner and outer applicator portions, and tilt apparatus capable of tilting either the workpiece support pedestal or the outer applicator portion about a radial axis perpendicular to said axis of symmetry and capable of rotating said workpiece support pedestal about said axis of symmetry. In a preferred embodiment, the reactor further includes apparatus for effecting axially symmetrical adjustments of plasma distribution, which may be either (or both) elevation apparatus for changing the location of said inner and outer portions relative to one another along said vertical axis of symmetry, or apparatus for apportioning the RF power levels applied to the inner and outer applicator portions.

    摘要翻译： 一种用于处理工件的等离子体反应器包括处理室，该处理室包括包括天花板并且具有大致垂直于所述天花板的对称垂直轴线的外壳，所述室内的工件支撑基座和大体上面对天花板，处理气体注入装置 腔室和耦合到腔室的真空泵。 反应器还包括覆盖天花板并包括径向内部施加器部分和径向外部施加器部分的等离子体源功率施加器，以及耦合到所述内部和外部施加器部分的RF电力设备，以及能够使工件支撑基座 或外部施加器部分围绕垂直于所述对称轴线的径向轴线，并且能够围绕所述对称轴线旋转所述工件支撑基座。 在优选实施例中，反应器还包括用于实现等离子体分布的轴对称调节的装置，其可以是（或两个）升降装置，用于沿所述垂直对称轴线相对于彼此改变所述内部和外部部分的位置， 或用于分配施加到内部和外部施加器部分的RF功率电平的装置。