公开(公告)号：US07087899B2

公开(公告)日：2006-08-08

申请号：US11077130

申请日：2005-03-11

申请人： Makoto Ezumi ,  Yoichi Ose ,  Akira Ikegami ,  Hideo Todokoro ,  Tatsuaki Ishijima ,  Takahiro Sato ,  Ritsuo Fukaya ,  Kazunari Asao

发明人： Makoto Ezumi ,  Yoichi Ose ,  Akira Ikegami ,  Hideo Todokoro ,  Tatsuaki Ishijima ,  Takahiro Sato ,  Ritsuo Fukaya ,  Kazunari Asao

IPC分类号： G21K7/00

CPC分类号： H01J37/265 ,  G01N23/2251 ,  H01J37/21 ,  H01J37/244 ,  H01J37/28 ,  H01J2237/0041 ,  H01J2237/216 ,  H01J2237/244 ,  H01J2237/24564 ,  H01J2237/24592 ,  H01J2237/2594 ,  H01J2237/2817

摘要： The present invention has the object of providing a charged particle beam irradiation method ideal for reducing the focus offset, magnification fluctuation and measurement length error in charged particle beam devices.To achieve these objects, a method is disclosed in the invention for measuring the electrical potential distribution on the sample with a static electrometer while loaded by a loader mechanism. Another method is disclosed for measuring the local electrical charge at specified points on the sample, and isolating and measuring the wide area electrostatic charge quantity from those local electrostatic charges. Yet another method is disclosed for correcting the measurement length value or magnification based on fluctuations found by measuring the amount of electrostatic charge at the specified points under at least two charged particle optical conditions, and then using a charged particle beam to measure fluctuations in measurement dimensions occurring due to fluctuations in the electrostatic charge at the specified locations.

摘要翻译： 本发明的目的是提供一种理想的用于减少带电粒子束装置中的聚焦偏移，放大波动和测量长度误差的带电粒子束照射方法。 为了实现这些目的，在本发明中公开了一种用于在由装载机构加载的情况下用静电静电计测量样品上的电位分布的方法。 公开了另一种测量样品上特定点的局部电荷的方法，并且从这些局部静电电荷中分离和测量广域静电电荷量。 公开了另一种用于基于通过测量至少两个带电粒子光学条件下的指定点处的静电电荷量而发现的波动来校正测量长度值或放大倍率的方法，然后使用带电粒子束来测量测量尺寸的波动 由于在指定位置处的静电电荷的波动而发生。

公开(公告)号：US20120126119A1

公开(公告)日：2012-05-24

申请号：US13387256

申请日：2010-07-27

申请人： Ritsuo Fukaya ,  Kazuhiro Ueda

发明人： Ritsuo Fukaya ,  Kazuhiro Ueda

IPC分类号： H01J37/28

CPC分类号： G01B15/04 ,  H01J37/265 ,  H01J37/28 ,  H01J2237/2817

摘要： To automatically measure patterns arranged symmetrically with respect to the axis of rotation on a sample by following predetermined procedures, a charged-particle-beam device of the present invention automatically rotates a template image to be used for template matching by an angle (θ1) calculated from the coordinates on the sample. Accordingly, when patterns arranged regularly and symmetrically with respect to the axis of rotation are automatically measured, the same template can be repeatedly used as in a case where devices arranged iteratively in a lattice-like fashion are observed or measured. Thus, the workload required to create a recipe can be reduced.

摘要翻译： 为了通过按照预定的步骤自动测量相对于样品上的旋转轴对称布置的图案，本发明的带电粒子束装置自动旋转用于模板匹配的模板图像一角度（“ ）根据样品坐标计算。 因此，当自动测量相对于旋转轴线规则地和对称地布置的图案时，可以重复使用相同的模板，就像在观察或测量以格子状迭代地排列的装置的情况一样。 因此，可以减少创建配方所需的工作量。

公开(公告)号：US08178836B2

公开(公告)日：2012-05-15

申请号：US12792808

申请日：2010-06-03

申请人： Tatsuaki Ishijima ,  Katsuhiro Sasada ,  Ritsuo Fukaya

发明人： Tatsuaki Ishijima ,  Katsuhiro Sasada ,  Ritsuo Fukaya

IPC分类号： G01N23/00 ,  H01J37/26 ,  G21K7/00

CPC分类号： G01N23/225 ,  H01J2237/004 ,  H01J2237/216 ,  H01J2237/24564 ,  H01J2237/28

摘要： A method and a device are disclosed for suppressing error in electrostatic charge amount or defocus on the basis of electrostatic charge storage due to electron beam scanning when measuring the electrostatic charge amount of the sample or a focus adjustment amount by scanning the electron beam. An electrostatic charge measurement method, a focus adjustment method, or a scanning electron microscope for measuring an electrostatic charge amount or controlling an application voltage to the sample changes the application voltage to the energy filter while moving the scanning location of the electron beam on the sample.

摘要翻译： 公开了一种方法和装置，用于当通过扫描电子束测量样品的静电电荷量或通过扫描电子束时，基于电子束扫描，基于静电电荷存储来抑制静电电荷量或散焦的误差。 静电电荷测量方法，焦点调节方法或用于测量静电电荷量或控制对样品的施加电压的扫描电子显微镜，在将电子束的扫描位置移动到样品上的同时，将能量过滤器的施加电压改变 。

公开(公告)号：US08080789B2

公开(公告)日：2011-12-20

申请号：US12560091

申请日：2009-09-15

申请人： Osamu Nasu ,  Tadashi Otaka ,  Hiroki Kawada ,  Ritsuo Fukaya ,  Makoto Ezumi

发明人： Osamu Nasu ,  Tadashi Otaka ,  Hiroki Kawada ,  Ritsuo Fukaya ,  Makoto Ezumi

IPC分类号： H01J37/28 ,  G01N23/225

CPC分类号： H01J37/28 ,  G01B15/00 ,  G01N23/225 ,  H01J2237/2814

摘要： The present invention suppresses decreases in the volumes of the patterns which have been formed on the surfaces of semiconductor samples or of the like, or performs accurate length measurements, irrespective of such decreases. In an electrically charged particle ray apparatus by which the line widths and other length data of the patterns formed on samples are to be measured by scanning the surface of each sample with electrically charged particle rays and detecting the secondary electrons released from the sample, the scanning line interval of said electrically charged particle rays is set so as not to exceed the irradiation density dictated by the physical characteristics of the sample. Or measured length data is calculated from prestored approximation functions.

摘要翻译： 本发明抑制在半导体样品的表面上形成的图案的体积减少，或者执行精确的长度测量，而不管这种减少。 在带电粒子射线装置中，通过用带电粒子射线扫描每个样品的表面并检测从样品释放的二次电子，测量在样品上形成的图案的线宽和其它长度数据，扫描 所述带电粒子束的线间隔被设定为不超过由样品的物理特性决定的照射密度。 或者测量的长度数据由预先存储的近似函数计算。

公开(公告)号：US20100294929A1

公开(公告)日：2010-11-25

申请号：US12710679

申请日：2010-02-23

申请人： Makoto Ezumi ,  Yoichi Ose ,  Akira Ikegami ,  Hideo Todokoro ,  Tatsuaki Ishijima ,  Takahiro Sato ,  Ritsuo Fukaya ,  Kazunari Asao

发明人： Makoto Ezumi ,  Yoichi Ose ,  Akira Ikegami ,  Hideo Todokoro ,  Tatsuaki Ishijima ,  Takahiro Sato ,  Ritsuo Fukaya ,  Kazunari Asao

IPC分类号： G21K7/00

CPC分类号： H01J37/265 ,  G01N23/2251 ,  H01J37/21 ,  H01J37/244 ,  H01J37/28 ,  H01J2237/0041 ,  H01J2237/216 ,  H01J2237/244 ,  H01J2237/24564 ,  H01J2237/24592 ,  H01J2237/2594 ,  H01J2237/2817

摘要： The present invention has the object of providing charged particle beam irradiation method ideal for reducing the focus offset, magnification fluctuation and measurement length error in charged particle beam devices. To achieve these objects, a method is disclosed in the invention for measuring the electrical potential distribution on the sample with a static electrometer while loaded by a loader mechanism. Another method is disclosed for measuring the local electrical charge at specified points on the sample, and isolating and measuring the wide area electrostatic charge quantity from those local electrostatic charges. Yet another method is disclosed for correcting the measurement length value or magnification based on fluctuations found by measuring the amount of electrostatic charge at the specified points under at least two charged particle optical conditions, and then using a charged particle beam to measure fluctuations in measurement dimensions occurring due to fluctuations in the electrostatic charge at the specified locations.

摘要翻译： 本发明的目的是提供一种理想的减少带电粒子束装置中的聚焦偏移，放大波动和测量长度误差的带电粒子束照射方法。 为了实现这些目的，在本发明中公开了一种用于在由装载机构加载的情况下用静电静电计测量样品上的电位分布的方法。 公开了另一种测量样品上特定点的局部电荷的方法，并且从这些局部静电电荷中分离和测量广域静电电荷量。 公开了另一种用于基于通过测量至少两个带电粒子光学条件下的指定点处的静电电荷量而发现的波动来校正测量长度值或放大倍率的方法，然后使用带电粒子束来测量测量尺寸的波动 由于在指定位置处的静电电荷的波动而发生。

公开(公告)号：US20080203298A1

公开(公告)日：2008-08-28

申请号：US12038641

申请日：2008-02-27

申请人： Tatsuaki ISHIJIMA ,  Katsuhiro Sasada ,  Ritsuo Fukaya

发明人： Tatsuaki ISHIJIMA ,  Katsuhiro Sasada ,  Ritsuo Fukaya

IPC分类号： G01N23/00

CPC分类号： G01N23/225 ,  H01J2237/004 ,  H01J2237/216 ,  H01J2237/24564 ,  H01J2237/28

摘要： The present invention aims to provide a method and a device of capable of suppressing error in electrostatic charge amount or defocus on the basis of electrostatic charge storage due to electron beam scanning when measuring the electrostatic charge amount of the sample or a focus adjustment amount by scanning the electron beam.In order to achieve the above object, according to one aspect of the present invention, an electrostatic charge measurement method, a focus adjustment method, or a scanning electron microscope for measuring an electrostatic charge amount or controlling an application voltage to the sample by changing the application voltage to the energy filter while moving the scanning location of the electron beam on the sample is proposed.

摘要翻译： 本发明的目的在于提供一种方法和装置，其能够基于通过电子束扫描在测量样品的静电电荷量时的静电电荷存储或通过扫描测量聚焦调节量来抑制静电电荷量或散焦的误差 电子束。 为了实现上述目的，根据本发明的一个方面，提供了一种静电电荷测量方法，焦点调节方法或扫描电子显微镜，用于测量静电荷量或通过改变样品的方式控制样品的施加电压 提出了将电子束的扫描位置移动到样品上的能量过滤器的施加电压。

公开(公告)号：US06946656B2

公开(公告)日：2005-09-20

申请号：US10483596

申请日：2002-07-10

申请人： Makoto Ezumi ,  Yoichi Ose ,  Akira Ikegami ,  Hideo Todokoro ,  Tatsuaki Ishijima ,  Takahiro Sato ,  Ritsuo Fukaya ,  Kazunari Asao

发明人： Makoto Ezumi ,  Yoichi Ose ,  Akira Ikegami ,  Hideo Todokoro ,  Tatsuaki Ishijima ,  Takahiro Sato ,  Ritsuo Fukaya ,  Kazunari Asao

IPC分类号： G01N23/00 ,  G01Q30/06 ,  G01Q30/18 ,  G01Q30/20 ,  G21K7/00 ,  H01J37/21 ,  H01J37/28 ,  H01J37/26

CPC分类号： H01J37/265 ,  G01N23/2251 ,  H01J37/21 ,  H01J37/244 ,  H01J37/28 ,  H01J2237/0041 ,  H01J2237/216 ,  H01J2237/244 ,  H01J2237/24564 ,  H01J2237/24592 ,  H01J2237/2594 ,  H01J2237/2817

摘要： The present invention has the object of providing a charged particle beam irradiation method ideal for reducing the focus offset, magnification fluctuation and measurement length error in charged particle beam devices.To achieve these objects, a method is disclosed in the invention for measuring the electrical potential distribution on the sample with a static electrometer while loaded by a loader mechanism. Another method is disclosed for measuring the local electrical charge at specified points on the sample, and isolating and measuring the wide area electrostatic charge quantity from those local electrostatic charges. Yet another method is disclosed for correcting the measurement length value or magnification based on fluctuations found by measuring the amount of electrostatic charge at the specified points under at least two charged particle optical conditions, and then using a charged particle beam to measure fluctuations in measurement dimensions occurring due to fluctuations in the electrostatic charge at the specified locations.

摘要翻译： 本发明的目的是提供一种理想的用于减少带电粒子束装置中的聚焦偏移，放大波动和测量长度误差的带电粒子束照射方法。 为了实现这些目的，在本发明中公开了一种用于在由装载机构加载的情况下用静电静电计测量样品上的电位分布的方法。 公开了另一种测量样品上特定点的局部电荷的方法，并且从这些局部静电电荷中分离和测量广域静电电荷量。 公开了另一种用于基于通过测量至少两个带电粒子光学条件下的指定点处的静电电荷量而发现的波动来校正测量长度值或放大倍率的方法，然后使用带电粒子束来测量测量尺寸的波动 由于在指定位置处的静电电荷的波动而发生。

公开(公告)号：US06184946B2

公开(公告)日：2001-02-06

申请号：US09308925

申请日：1999-05-27

申请人： Masahiko Ando ,  Masatoshi Wakagi ,  Ritsuo Fukaya

发明人： Masahiko Ando ,  Masatoshi Wakagi ,  Ritsuo Fukaya

IPC分类号： G02F1136

CPC分类号： G02F1/1368 ,  G02F1/134363 ,  H01L21/28008 ,  H01L21/28194 ,  H01L21/28202 ,  H01L29/513 ,  H01L29/518 ,  H01L29/66765 ,  H01L29/78669

摘要： A thin film transistor used as a switching element of an active matrix type liquid crystal display is an enhancement-mode thin film transistor including a silicon nitride film formed over a scanning electrode, an insulating layer formed on the silicon nitride film, and a semiconductor layer having a source region and a drain region formed on the insulating layer. The thin film transistor has a threshold voltage higher than the maximum value of the liquid crystal operating voltage. The insulating layer is a silicon oxide film having a thickness of 30 Å or more.

摘要翻译： 用作有源矩阵型液晶显示器的开关元件的薄膜晶体管是包括在扫描电极上形成的氮化硅膜，形成在氮化硅膜上的绝缘层和半导体层的增强型薄膜晶体管 具有形成在绝缘层上的源区和漏区。 薄膜晶体管的阈值电压高于液晶工作电压的最大值。 绝缘层是厚度为30埃以上的氧化硅膜。

公开(公告)号：US5995187A

公开(公告)日：1999-11-30

申请号：US906475

申请日：1997-08-05

申请人： Masatoshi Wakagi ,  Masahiko Ando ,  Ritsuo Fukaya

发明人： Masatoshi Wakagi ,  Masahiko Ando ,  Ritsuo Fukaya

IPC分类号： G02F1/1333 ,  G02F1/1343 ,  G02F1/136 ,  G02F1/1368 ,  G02F1/1337

CPC分类号： G02F1/134363 ,  G02F1/133345 ,  G02F1/1368

摘要： A liquid crystal display device has a plurality of gate electric wirings provided on one of a pair of substrates, a plurality of drain electric wirings which respectively intersect with the plurality of gate electric wirings in a matrix state, a plurality of thin film transistors formed on respective intersecting points of the drain electric wirings and the gate electric wirings, a plurality of common electric wirings extending in the same direction as the gate electric wirings, a plurality of picture elements, at least one of the picture elements being respectively surrounded by the gate electric wirings and the drain electric wirings, a plurality of counter electrodes connected to the common electric wirings and extending in the same direction as the drain electric wirings, and a plurality of the picture element electrodes connected to the thin film transistors and extending in the same direction as the counter electrode corresponding to respective picture elements, in which the respective counter electrodes contact the liquid crystal layer directly. Furthermore, an electric field having a parallel component with respect to one of the pair of substrates is produced in said liquid crystal layer by an electrical voltage applied between the counter electrodes and the picture element electrodes.

摘要翻译： 液晶显示装置具有设置在一对基板中的一个基板上的多个栅极电布线，与矩阵状态的多个栅极电布线分别相交的多个漏极电布线，形成在多个基板上的多个薄膜晶体管 漏极电布线和栅极电布线的各个相交点，沿与栅极电布线相同的方向延伸的多个公共电线，多个像素，至少一个像素分别被栅极包围 电气布线和漏极电布线，多个与公共电线连接并沿与​​漏电布线相同的方向延伸的对置电极，以及与薄膜晶体管连接并延伸的多个像素电极 方向作为对应于各个图像元素的对置电极，其中， 反电极直接与液晶层接触。 此外，通过施加在对置电极和像素电极之间的电压，在所述液晶层中产生相对于一对基板之一具有平行分量的电场。