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71 条记录 (耗时 0.055 秒)

    Method and system for resource and admission control in an NGN home network
    21.
    发明申请
    Method and system for resource and admission control in an NGN home network 有权
    NGN家庭网络中资源和准入控制的方法和系统

    公开(公告)号：US20110261690A1

    公开(公告)日：2011-10-27

    申请号：US12992222

    申请日：2009-07-17

    申请人： Jun Song ,  Jianjie You

    发明人： Jun Song ,  Jianjie You

    IPC分类号： H04L12/24

    CPC分类号： H04W12/08 ,  H04L41/0893 ,  H04L41/5003 ,  H04L65/1043 ,  H04L65/4076 ,  H04L65/80 ,  H04W76/12

    摘要： The present disclosure discloses a method and system for resource and admission control in an NGN home network. Through setting up an Rh interface between the Policy Decision Function Entity of the NGN service provider and the Home Gateway Enforcement Function Entity in the customer premise network, the Policy Decision Function Entity of the service provider makes the resource and admission control policy for the customer premises network and sends down the policy rules to the customer premises network through the interface. Thus the quality of service of the network that the users use could be ensured well.

    摘要翻译： 本公开公开了一种用于NGN家庭网络中的资源和准入控制的方法和系统。 通过在客户驻地网络中建立NGN服务提供商的策略决策功能实体和家庭网关执行功能实体之间的Rh接口，服务提供商的策略决策功能实体为客户端提供资源和准入控制策略 网络，并通过接口将策略规则发送给客户驻地网络。 因此，可以很好地保证用户使用的网络的服务质量。

    Method and apparatus for optimized assignment of Abis transmission resources based on dynamic statistical time division multiplexing
    22.
    发明授权
    Method and apparatus for optimized assignment of Abis transmission resources based on dynamic statistical time division multiplexing 有权
    基于动态统计时分复用优化Abis传输资源分配的方法和装置

    公开(公告)号：US07818019B2

    公开(公告)日：2010-10-19

    申请号：US11627031

    申请日：2007-01-25

    申请人： Enyuan Qian ,  Huiyan Zhang ,  Lingfeng Lin ,  Jun Song ,  Yang Wu ,  Chunting Li ,  Yi Zhang ,  Ke Feng

    发明人： Enyuan Qian ,  Huiyan Zhang ,  Lingfeng Lin ,  Jun Song ,  Yang Wu ,  Chunting Li ,  Yi Zhang ,  Ke Feng

    IPC分类号： H04B7/00

    CPC分类号： H04W28/18 ,  H04W72/04 ,  H04W72/0453 ,  H04W88/08 ,  H04W88/12 ,  H04W92/12 ,  H04W92/22

    摘要： The present invention relates to technique for optimized assignment of Abis transmission resources based on dynamic statistical time division multiplexing, the method comprising the steps of: assigning a set of 64 k TS's to GPRS/EGPRS services on an Abis link, the set of 64 k TS's shared among all BTS's connected to the Abis interface; a PCU assigning sufficient Abis transmission resources to a TRX based on the load thereof if the TRX has EGPRS services; a BSC interconnecting Abis transmission resources and BSC-PCU transmission resources and informing a BTS that said Abis transmission resources have been assigned to a TRE mapped to the TRX; the PCU reassigning bandwidth of the Abis transmission resources based on changes in the load of the TRX; in each TRX, all RTS's statistical-time-division-multiplexing all transmission resources of the TRX based on flow in different periods for different RTS's. The present invention will achieve dynamic sharing of Abis transmission resources on a RTS layer so as to optimize using of Abis transmission resources, reduce waste and decrease operating cost.

    摘要翻译： 本发明涉及基于动态统计时分复用来优化Abis传输资源分配的技术，该方法包括以下步骤：在一个Abis链路上将一组64k个TS分配给GPRS / EGPRS业务，该组64k TS在所有BTS与Abis接口之间共享; 如果TRX具有EGPRS服务，则PCU根据其负载向TRX分配足够的Abis传输资源; BSC互连Abis传输资源和BSC-PCU传输资源，并通知BTS所述Abis传输资源已被分配给映射到TRX的TRE; PCU根据TRX的负载变化重新分配Abis传输资源的带宽; 在每个TRX中，所有RTS的统计时分复用TRX的所有传输资源都是基于不同时段的不同RTS的流。 本发明将实现RTS层上Abis传输资源的动态共享，从而优化Abis传输资源的使用，减少浪费并降低运营成本。

    METROPOLITAN AREA NETWORK RESOURCE CONTROL SYSTEM AND METHOD, ACCESS RESOURCE ADMISSION AND CONTROL DEVICE
    23.
    发明申请
    METROPOLITAN AREA NETWORK RESOURCE CONTROL SYSTEM AND METHOD, ACCESS RESOURCE ADMISSION AND CONTROL DEVICE 有权
    大都会区域网络资源控制系统和方法，访问资源入侵和控制设备

    公开(公告)号：US20100189125A1

    公开(公告)日：2010-07-29

    申请号：US12664725

    申请日：2008-04-28

    申请人： Jun Song

    发明人： Jun Song

    IPC分类号： H04L12/24

    CPC分类号： H04W28/24 ,  H04L41/5019 ,  H04L47/10 ,  H04L47/20 ,  H04L47/70 ,  H04L47/72 ,  H04L47/781 ,  H04L47/805 ,  H04L47/824 ,  H04W88/18

    摘要： A metropolitan area network (MAN) resource control system, method and Access-Resource and Admission Control Function (A-RACF) device are disclosed, wherein, the A-RACF device comprises a MAN resource and policy control function (RPCF) module. The MAN network device comprises a MAN resource control enforcement function (RCEF) module. The system is connected via the MAN RPC module with the MAN RCEF module which needs to be controlled to control the QoS of the MAN resource. The MAN RPC module is used to make a MAN resource control strategy and generate the QoS policy. The MAN RCEF module is used to execute the QoS control according to the QoS policy sent by the A-RACF device.

    摘要翻译： 公开了一种城域网（MAN）资源控制系统，方法和接入资源接纳控制功能（A-RACF），其中，A-RACF设备包括MAN资源和策略控制功能（RPCF）模块。 MAN网络设备包括MAN资源控制执行功能（RCEF）模块。 该系统通过MAN RPC模块与需要控制的MAN RCEF模块连接，以控制MAN资源的QoS。 MAN RPC模块用于制定MAN资源控制策略并生成QoS策略。 MAN RCEF模块用于根据A-RACF设备发送的QoS策略来执行QoS控制。

    Novel method of body contact for SOI MOSFET
    25.
    发明申请
    Novel method of body contact for SOI MOSFET 有权
    SOI MOSFET的体接触新方法

    公开(公告)号：US20050014294A1

    公开(公告)日：2005-01-20

    申请号：US10915670

    申请日：2004-08-10

    申请人： Ting Ang ,  Sang Loong ,  Shyue Quek ,  Jun Song

    发明人： Ting Ang ,  Sang Loong ,  Shyue Quek ,  Jun Song

    IPC分类号： H01L21/336 ,  H01L29/786 ,  H01L21/76

    CPC分类号： H01L29/66772 ,  H01L29/78615

    摘要： A new method for forming a silicon-on-insulator MOSFET while eliminating floating body effects is described. A silicon-on-insulator substrate is provided comprising a silicon semiconductor substrate underlying an oxide layer underlying a silicon layer. A first trench is etched partially through the silicon layer and not to the underlying oxide layer. Second trenches are etched fully through the silicon layer to the underlying oxide layer wherein the second trenches separate active areas of the semiconductor substrate and wherein one of the first trenches lies within each of the active areas. The first and second trenches are filled with an insulating layer. Gate electrodes and associated source and drain regions are formed in and on the silicon layer in each active area. An interlevel dielectric layer is deposited overlying the gate electrodes. First contacts are opened through the interlevel dielectric layer to the underlying source and drain regions. A second contact opening is made through the interlevel dielectric layer in each of the active regions wherein the second contact opening contacts both the first trench and one of the second trenches. The first and second contact openings are filled with a conducting layer to complete formation of a silicon-on-insulator device in the fabrication of integrated circuits.

    摘要翻译： 描述了一种在消除浮体效应的同时形成绝缘体上硅MOSFET的新方法。 提供了一种绝缘体上硅衬底，其包括位于硅层下面的氧化物层下面的硅半导体衬底。 第一沟槽部分地被蚀刻穿过硅层而不是蚀刻到下面的氧化物层。 第二沟槽被完全蚀刻通过硅层到下面的氧化物层，其中第二沟槽分离半导体衬底的有源区域，并且其中第一沟槽中的一个位于每个有源区域内。 第一和第二沟槽填充有绝缘层。 栅极电极和相关的源极和漏极区域形成在每个有源区域中的硅层中和硅层上。 沉积覆盖栅电极的层间电介质层。 第一触点通过层间介质层开放到下面的源极和漏极区域。 在每个有源区域中通过层间电介质层形成第二接触开口，其中第二接触开口接触第一沟槽和第二沟槽中的一个沟槽。 第一和第二接触开口填充有导电层，以在集成电路的制造中完成绝缘体上硅器件的形成。