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    SEMICONDUCTOR DEVICES WITH SINGLE-PHOTON AVALANCHE DIODES AND HYBRID ISOLATION STRUCTURES
    21.
    发明申请
    SEMICONDUCTOR DEVICES WITH SINGLE-PHOTON AVALANCHE DIODES AND HYBRID ISOLATION STRUCTURES 有权

    公开(公告)号：US20210175380A1

    公开(公告)日：2021-06-10

    申请号：US16948325

    申请日：2020-09-14

    Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

    Inventor： Swarnal BORTHAKUR ,  Marc Allen SULFRIDGE

    IPC: H01L31/0232 ,  H01L31/107 ,  H01L27/146

    Abstract: An imaging device may include single-photon avalanche diodes (SPADs). To improve the sensitivity and signal-to-noise ratio of the SPADs, light scattering structures may be formed in the semiconductor substrate to increase the path length of incident light through the semiconductor substrate. To mitigate crosstalk, an isolation structure may be formed in a ring around the SPAD. The isolation structure may be a hybrid isolation structure with both a metal filler that absorbs light and a low-index filler that reflects light. The isolation structure may be formed as a single trench or may include a backside deep trench isolation portion and a front side deep trench isolation portion. The isolation structure may also include a color filtering material.

    SELF-ALIGNED CONTACT OPENINGS FOR BACKSIDE THROUGH SUBSTRATE VIAS
    22.
    发明申请
    SELF-ALIGNED CONTACT OPENINGS FOR BACKSIDE THROUGH SUBSTRATE VIAS 有权

    公开(公告)号：US20210111102A1

    公开(公告)日：2021-04-15

    申请号：US16948874

    申请日：2020-10-05

    Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

    Inventor： Jeffrey Peter GAMBINO ,  Swarnal BORTHAKUR

    IPC: H01L23/48 ,  H01L25/18 ,  H01L21/48

    Abstract: A method includes etching a through-substrate via (TSV) in a substrate from a backside of the substrate. The substrate has a device layer on a frontside. The method further includes depositing a conformal spacer layer on the backside of the substrate, and sidewalls and a bottom of the TSV, and etching the spacer layer to form a self-aligned mask for etching a contact opening at the bottom of TSV to a metal pad in the device layer, and etching the contact opening at the bottom of TSV to the metal pad in the device layer. The method further includes disposing a conductive material layer in the TSV and the contact opening to make a vertical interconnection from the backside of the substrate to the metal pad in the device layer.

    IMAGING SYSTEMS WITH IMPROVED NEAR-INFRARED DETECTION PIXELS
    23.
    发明申请
    IMAGING SYSTEMS WITH IMPROVED NEAR-INFRARED DETECTION PIXELS 审中-公开

    公开(公告)号：US20200328243A1

    公开(公告)日：2020-10-15

    申请号：US16460715

    申请日：2019-07-02

    Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

    Inventor： Stanley MICINSKI ,  Swarnal BORTHAKUR

    IPC: H01L27/146

    Abstract: An imaging device may have an array of image sensor pixels that includes infrared image pixels. Backside and frontside reflectors may be incorporated into the infrared pixels to increase effective thicknesses of photosensitive regions within the pixels. In other words, light incident on each pixel may be reflected and traverse the photosensitive region multiple times, thereby allowing silicon in the photosensitive region to absorb infrared light more efficiently. The backside reflector may be interposed between the silicon and a microlens, which may have a toroidal shape to direct light around the backside reflector. If desired, the toroidal lens may have a concave opening. Alternatively, the backside reflector may be ring-shaped, and a spherical microlens may focus light through a center portion of the reflector. A top surface of the silicon layer may be curved to focus light toward the center of the photosensitive region and improve pixel efficiency.

    HIGH DYNAMIC RANGE PIXEL WITH IN-PIXEL LIGHT SHIELD STRUCTURES
    24.
    发明申请
    HIGH DYNAMIC RANGE PIXEL WITH IN-PIXEL LIGHT SHIELD STRUCTURES 审中-公开

    公开(公告)号：US20190131333A1

    公开(公告)日：2019-05-02

    申请号：US15799833

    申请日：2017-10-31

    Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

    Inventor： Swarnal BORTHAKUR ,  Marc Allen SULFRIDGE

    IPC: H01L27/146

    Abstract: Multi-photodiode image pixels may include sub-pixels with differing light sensitivities. Microlenses may be formed over the multi-photodiode image pixels so that light sensitivity of sub-pixels in an outer group of sub-pixels is enhanced. To prevent high angle light incident upon one of the sub-pixels of the image pixel from generating charges in a photosensitive region of another sub-pixel of the image pixel, intra-pixel isolation structures may be formed. Intra-pixel isolation structures may surround, and in some embodiments, overlap the light collecting region of an inner photodiode. When the intra-pixel isolation structures have a different index of refraction than light filtering material formed adjacent to the isolation structures, high angle light incident upon the isolation structures may be reflected back into the sub-pixel it was initially incident upon. Intra-pixel isolation structures may be formed entirely from optically transparent materials or a combination of optically transparent and opaque materials.

    STRUCTURES AND METHODS OF CREATING CLEAR PIXELS
    25.
    发明申请
    STRUCTURES AND METHODS OF CREATING CLEAR PIXELS 审中-公开

    公开(公告)号：US20190123083A1

    公开(公告)日：2019-04-25

    申请号：US15787959

    申请日：2017-10-19

    Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

    Inventor： Swarnal BORTHAKUR ,  Nathan Wayne CHAPMAN ,  Brian Anthony VAARTSTRA

    IPC: H01L27/146

    Abstract: An image sensor may include an array of pixels having a color filter layer. The color filter layer may include colored elements and clear elements. The clear elements may be formed from transparent dielectric material. The color filter layer may include a grid of light-blocking material that forms color filter container structures having an array of openings in which the colored elements and the clear elements are formed. The color filter container structures may be formed from the same transparent dielectric material that forms the clear elements. The color filter container structures may be formed from opaque materials or transparent materials that form structures such as planarization layers, microlenses, or antireflection coatings for the array of pixels. The material used to form the color filter container structures may have a refractive index that is sufficiently high to prevent light from passing between adjacent elements in the color filter layer.

    IMAGE SENSORS HAVING PHOTODIODE REGIONS IMPLANTED FROM MULTIPLE SIDES OF A SUBSTRATE
    27.
    发明申请
    IMAGE SENSORS HAVING PHOTODIODE REGIONS IMPLANTED FROM MULTIPLE SIDES OF A SUBSTRATE 有权

    公开(公告)号：US20170208277A1

    公开(公告)日：2017-07-20

    申请号：US15155742

    申请日：2016-05-16

    Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

    Inventor： Swarnal BORTHAKUR ,  Ulrich BOETTIGER ,  Richard A. MAURITZSON

    IPC: H04N5/378 ,  H01L27/146

    CPC classification number: H04N5/378 ,  H01L27/14621 ,  H01L27/14636 ,  H01L27/14643 ,  H01L27/14698

    Abstract: An image sensor with an array of pixels is provided. The array may include a semiconductor substrate having opposing first and second sides. A first photodiode region may be implanted in the semiconductor substrate through the first side. A second photodiode region may be implanted in the semiconductor substrate through the second side. The second photodiode region may be implanted to overlap with the first photodiode region in the semiconductor substrate to form a continuous photodiode region that extends from the first side to the second side of the substrate. The continuous region may generate charge in response to image light. The continuous region may belong to a single pixel that generates an image signal from the charge. The image signal may be conveyed to readout circuitry via metallization layers formed over the substrate. The first and second photodiode regions may be thermally activated prior to forming the metallization layers.

    METHODS FOR FORMING IMAGE SENSORS WITH INTEGRATED BOND PAD STRUCTURES
    28.
    发明申请
    METHODS FOR FORMING IMAGE SENSORS WITH INTEGRATED BOND PAD STRUCTURES 审中-公开
    用于形成具有整体粘结片结构的图像传感器的方法

    公开(公告)号：US20160300962A1

    公开(公告)日：2016-10-13

    申请号：US14681238

    申请日：2015-04-08

    Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

    Inventor： Swarnal BORTHAKUR ,  Ulrich BOETTIGER

    IPC: H01L31/0216 ,  H04N9/04

    CPC classification number: H01L27/14621 ,  H01L27/14623 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14645 ,  H01L27/14685 ,  H01L27/14689 ,  H04N9/045

    Abstract: An imaging system may include an image sensor die, which may be backside illuminated (BSI). A light shielding layer and a conductive layer may be formed in the image sensor die. First and second portions of the conductive layer may be electrically isolated, so that the second conductive portion may be coupled to other power supply signals through a bond pad region, while the light shield may be shorted to ground. Optionally, the first and second portions may both be coupled to ground. The light shield may also be shorted through the bond pad region in a continuous conductive layer. A through oxide via may be formed in the image sensor die to couple metal interconnect structures to the conductive layer. Color filter containment structures may be formed over active image sensor pixels on the image sensor die, which may be selectively etched to improve planarity.

    Abstract translation: 成像系统可以包括可以背面照明（BSI）的图像传感器裸片。 可以在图像传感器管芯中形成遮光层和导电层。 导电层的第一和第二部分可以是电隔离的，使得第二导电部分可以通过接合焊盘区域耦合到其它电源信号，而光屏蔽可能短路到地。 可选地，第一和第二部分可以都联接到地面。 光屏蔽还可以通过连续导电层中的接合焊盘区域短路。 可以在图像传感器芯片中形成通孔氧化物通孔，以将金属互连结构耦合到导电层。 可以在图像传感器管芯上的有源图像传感器像素上形成滤色器保护结构，其可以被选择性地蚀刻以改善平面度。

    CHIP STACKING WITH BOND PAD ABOVE A BONDLINE
    29.
    发明申请
    CHIP STACKING WITH BOND PAD ABOVE A BONDLINE 有权

    公开(公告)号：US20240371905A1

    公开(公告)日：2024-11-07

    申请号：US18309933

    申请日：2023-05-01

    Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

    Inventor： Swarnal BORTHAKUR ,  Marc Allen SULFRIDGE ,  Jeffrey Peter GAMBINO ,  Vladimir KOROBOV ,  Richard MAURITZSON ,  David T. PRICE

    IPC: H01L27/146 ,  H01L23/58

    Abstract: A semiconductor device may include a first chip that includes a first wafer and a first dielectric layer disposed thereon. The semiconductor device may include a second chip that includes a second wafer and a second dielectric layer disposed thereon, the second chip having a backside surface and a frontside surface opposed to the backside surface, the second chip being bonded to the first chip at the frontside surface to define a bond line between the first dielectric layer and the second dielectric layer. An opening through the backside surface of the second chip may extend into the second dielectric layer, and a bond pad may be disposed within the second dielectric layer between the second wafer and the bond line.

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