公开(公告)号：US20240405308A1

公开(公告)日：2024-12-05

申请号：US18695496

申请日：2022-09-20

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Yohei MOMMA ,  Tetsuya KAKEHATA ,  Tetsuji ISHITANI ,  Yuji IWAKI ,  Ryota TAJIMA ,  Shuhei YOSHITOMI

IPC: H01M10/615 ,  B60L58/27 ,  H01M10/44 ,  H01M10/48 ,  H01M10/625 ,  H01M10/63 ,  H01M10/653 ,  H01M50/136 ,  H01M50/213

Abstract: A power storage device that is less likely to be influenced by an ambient temperature is provided. The power storage device capable of being charged and discharged even in a low-temperature environment is provided. A first secondary battery capable of being charged and discharged even at low temperatures and a general second secondary battery are adjacent to each other in the power storage device. The power storage device having such a structure can use, as an internal heat source in a low-temperature environment, heat generated by charge and discharge of the secondary battery capable of being charged and discharged even at low temperatures. Specifically, the power storage device includes the first secondary battery and the second secondary battery adjacent to each other, the first secondary battery has flexibility, and a value of discharge capacity in discharge at −40° C. is higher than or equal to 50% of a value of discharge capacity in discharge at 25° C.

公开(公告)号：US20240170667A1

公开(公告)日：2024-05-23

申请号：US18550769

申请日：2022-03-14

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Tetsuya KAKEHATA ,  Yohei MOMMA ,  Yumiko YONEDA ,  Kazutaka KURIKI ,  Tatsuyoshi TAKAHASHI ,  Kunihiro FUKUSHIMA

IPC: H01M4/525 ,  B60L50/64 ,  H01M4/02 ,  H01M4/131 ,  H01M50/109

CPC classification number: H01M4/525 ,  H01M4/131 ,  H01M50/109 ,  B60L50/64 ,  H01M2004/028 ,  H01M2220/20

Abstract: A battery in which a decrease in discharge capacity retention rate in charge and discharge cycle tests is inhibited is provided. The battery includes a positive electrode and a negative electrode. The positive electrode is used as a positive electrode of a test battery in which a negative electrode includes a lithium metal. When a test of 50 repetitions of a cycle of charge and discharge in which, after constant current charge is performed at a charge rate of 1 C (1 C=200 mA/g) until a voltage of 4.6 V is reached, constant voltage charge is performed at a voltage of 4.6 V until the charge rate reaches 0.1 C, and constant current discharge is then performed at a discharge rate of 1 C until a voltage of 2.5 V is reached is performed in a 25° C. environment or a 45° C. environment and discharge capacity is measured in each cycle, a discharge capacity value measured in a 50th cycle accounts for higher than or equal to 90% and lower than 100% of a maximum discharge capacity value in all 50 cycles.

公开(公告)号：US20230286825A1

公开(公告)日：2023-09-14

申请号：US18040286

申请日：2021-08-06

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Tetsuya KAKEHATA ,  Tetsuji ISHITANI ,  Yohei MOMMA ,  Yusuke YOSHITANI

IPC: C01G53/00

CPC classification number: C01G53/44 ,  C01P2006/40

Abstract: A manufacturing method of a highly purified positive electrode active material is provided. Alternatively, a manufacturing method of a positive electrode active material whose crystal structure is not easily broken even when charging and discharging are repeated is provided. Provided is a manufacturing method of a positive electrode active material containing lithium and a transition metal. The manufacturing method includes a first step of forming a hydroxide containing the transition metal using a basic aqueous solution and an aqueous solution containing the transition metal, a second step of preparing a lithium compound, a third step of mixing the lithium compound and the hydroxide to form a mixture, and a fourth step of heating the mixture to form a composite oxide containing lithium and the transition metal. A material with a purity higher than or equal to 99.99% is prepared as the lithium compound in the second step, and the heating is performed in an oxygen-containing atmosphere with a dew point lower than or equal to −50° C. in the fourth step.

公开(公告)号：US20230274935A1

公开(公告)日：2023-08-31

申请号：US18109305

申请日：2023-02-14

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Tetsuya KAKEHATA ,  Yuji EGI ,  Yasuhiro JINBO ,  Yujiro SAKURADA

IPC: H01L21/02 ,  H01L29/786 ,  H01L29/51 ,  H01L21/8234

CPC classification number: H01L21/02565 ,  H01L21/02614 ,  H01L29/7869 ,  H01L29/78696 ,  H01L29/517 ,  H01L21/823412

Abstract: A semiconductor device having favorable electrical characteristics is provided. A metal oxide is formed over a substrate by the steps of: introducing a first precursor into a chamber in which the substrate is provided; introducing a first oxidizer after the introduction of the first precursor; introducing a second precursor after the introduction of the first oxidizer; and introducing a second oxidizer after the introduction of the second precursor.

公开(公告)号：US20230110947A1

公开(公告)日：2023-04-13

申请号：US17904015

申请日：2021-02-17

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Yasuhiro JINBO ,  Yuji EGI ,  Tetsuya KAKEHATA

IPC: C23C16/455 ,  C23C16/40 ,  C23C16/46

Abstract: A novel deposition method of a metal oxide is provided. The deposition method includes a first step of supplying a first precursor to a chamber; a second step of supplying a second precursor to the chamber; a third step of supplying a third precursor to the chamber; and a fourth step of introducing an oxidizer into the chamber after the first step, the second step, and the third step. The first to third precursors are different kinds of precursors, and a substrate placed in the chamber in the first to fourth steps is heated to a temperature higher than or equal to 300° C. and lower than or equal to decomposition temperatures of the first to third precursors.

公开(公告)号：US20170025543A1

公开(公告)日：2017-01-26

申请号：US15211160

申请日：2016-07-15

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Tetsuya KAKEHATA

IPC: H01L29/786 ,  H01L29/66

CPC classification number: H01L29/78606 ,  H01L27/1225 ,  H01L29/42384 ,  H01L29/66969 ,  H01L29/7854 ,  H01L29/78609 ,  H01L29/7869 ,  H01L29/78696

Abstract: An insulator is formed over a substrate, an opening is formed in the insulator, and an oxide semiconductor is formed in the opening. Then, part of the insulator is removed to expose a side surface of the oxide semiconductor.

Abstract translation: 在衬底上形成绝缘体，在绝缘体中形成开口，并且在开口中形成氧化物半导体。 然后，去除绝缘体的一部分以暴露氧化物半导体的侧表面。

公开(公告)号：US20140329371A1

公开(公告)日：2014-11-06

申请号：US14336245

申请日：2014-07-21

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hideto OHNUMA ,  Tetsuya KAKEHATA ,  Yoichi IIKUBO

IPC: H01L21/762

CPC classification number: H01L21/76254 ,  H01L21/84

Abstract: An SOI substrate having an SOI layer that can be used in practical applications even when a substrate with low upper temperature limit, such as a glass substrate, is used, is provided. A semiconductor device using such an SOI substrate, is provided. In bonding a single-crystal semiconductor layer to a substrate having an insulating surface or an insulating substrate, a silicon oxide film formed using organic silane as a material on one or both surfaces that are to form a bond is used. According to the present invention, a substrate with an upper temperature limit of 700° C. or lower, such as a glass substrate, can be used, and an SOI layer that is strongly bonded to the substrate can be obtained. In other words, a single-crystal semiconductor layer can be formed over a large-area substrate that is longer than one meter on each side.

Abstract translation: 提供了即使使用诸如玻璃基板的具有低的上限温度的基板也可以在实际应用中使用具有SOI层的SOI衬底。 提供了使用这种SOI衬底的半导体器件。 在将单晶半导体层接合到具有绝缘表面的基板或绝缘基板上时，使用在有一个或两个表面上形成键的有机硅烷作为材料形成的氧化硅膜。 根据本发明，可以使用具有700℃以上的上限温度的基板，例如玻璃基板，并且可以获得与基板强结合的SOI层。 换句话说，单晶半导体层可以形成在每侧长于1米的大面积基板上。

公开(公告)号：US20240266222A1

公开(公告)日：2024-08-08

申请号：US18613772

申请日：2024-03-22

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Naoki OKUNO ,  Tetsuya KAKEHATA ,  Hiroki KOMAGATA ,  Yuji EGI

IPC: H01L21/8234 ,  H01L21/02 ,  H01L29/66 ,  H01L29/786

CPC classification number: H01L21/823412 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02565 ,  H01L29/66969 ,  H01L29/786 ,  H01L29/78696 ,  H01L29/66742

Abstract: A manufacturing method of a semiconductor device includes the forming a first oxide over a substrate; depositing a first insulator over the first oxide; forming an opening reaching the first oxide in the first insulator; depositing a first oxide film in contact with the first oxide and the first insulator in the opening; depositing a first insulating film over the first oxide film by a PEALD method; depositing a first conductive film over the first insulating film; and removing part of the first oxide film, part of the first insulating film, and part of the first conductive film until a top surface of the first insulator is exposed to form a second oxide, a second insulator, and a first conductor. The deposition of the first insulating film is performed while the substrate is heated to higher than or equal to 300°.

公开(公告)号：US20240258497A1

公开(公告)日：2024-08-01

申请号：US18562365

申请日：2022-05-16

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Tetsuya KAKEHATA ,  Teppei OGUNI ,  Tatsuyoshi TAKAHASHI ,  Kazuya SHIMADA ,  Yohei MOMMA ,  Atsushi KAWATSUKI

IPC: H01M4/13 ,  H01G11/24 ,  H01G11/56 ,  H01G11/66 ,  H01M4/02 ,  H01M4/36 ,  H01M4/62

CPC classification number: H01M4/13 ,  H01G11/24 ,  H01G11/56 ,  H01G11/66 ,  H01M4/366 ,  H01M4/624 ,  H01M2004/021 ,  H01M2004/028 ,  H01M2220/10 ,  H01M2220/20 ,  H01M2220/30

Abstract: Electrodes and a secondary battery having high capacity density and being excellent in terms of rapid charging and rapid discharging are provided. The battery includes a positive electrode and a negative electrode. The positive electrode includes a current collector, a first layer overlapping with the current collector, and a second layer overlapping with the first layer. The first layer contains a first active material with a first particle diameter and the second layer contains a second active material with a second particle diameter. The first particle diameter is smaller than the second particle diameter. It is preferable that the second active material include a surface portion and an inner portion, the surface portion be a region within a depth of 10 nm or less from a surface of the second active material to the inner portion, and that the surface portion and the inner portion be topotaxy.

公开(公告)号：US20240097099A1

公开(公告)日：2024-03-21

申请号：US18264264

申请日：2022-01-31

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Tetsuya KAKEHATA

IPC: H01M4/04 ,  H01M4/139

CPC classification number: H01M4/0435 ,  H01M4/0404 ,  H01M4/139 ,  H01G11/86

Abstract: An object of one embodiment of the present invention is to achieve a manufacturing method which can increase capacity density of a secondary battery. Another object is to provide a manufacturing method of a highly safe or reliable secondary battery. The manufacturing method of electrodes (a positive electrode and a negative electrode) of a secondary battery includes a vibration treatment step for supplying vibration to the electrode and a press step for applying pressure to the electrode to compress an active material layer in the electrode. The vibration treatment step is performed before the press step.