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    SEMICONDUCTOR DEVICE
    22.
    发明申请
    SEMICONDUCTOR DEVICE 审中-公开

    公开(公告)号：US20180026053A1

    公开(公告)日：2018-01-25

    申请号：US15677125

    申请日：2017-08-15

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Shunpei YAMAZAKI ,  Hiroyuki MIYAKE ,  Hideaki SHISHIDO ,  Jun KOYAMA

    IPC: H01L27/12 ,  H01L29/786

    CPC classification number: H01L27/1225 ,  H01L27/1255 ,  H01L29/7869

    Abstract: A semiconductor device including a capacitor whose charge capacity is increased while improving the aperture ratio is provided. Further, a semiconductor device which consumes less power is provided. A transistor which includes a light-transmitting semiconductor film, a capacitor in which a dielectric film is provided between a pair of electrodes, an insulating film which is provided over the light-transmitting semiconductor film, and a first light-transmitting conductive film which is provided over the insulating film are included. The capacitor includes the first light-transmitting conductive film which serves as one electrode, the insulating film which functions as a dielectric, and a second light-transmitting conductive film which faces the first light-transmitting conductive film with the insulating film positioned therebetween and functions as the other electrode. The second light-transmitting conductive film is formed over the same surface as the light-transmitting semiconductor film of the transistor and is a metal oxide film containing a dopant.

    LIGHT-EMITTING DEVICE
    28.
    发明申请
    LIGHT-EMITTING DEVICE 有权

    公开(公告)号：US20170104013A1

    公开(公告)日：2017-04-13

    申请号：US15385157

    申请日：2016-12-20

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Hiroyuki MIYAKE ,  Junichi KOEZUKA ,  Masami JINTYOU ,  Yukinori SHIMA ,  Shunpei YAMAZAKI

    IPC: H01L27/12

    CPC classification number: H01L27/1225 ,  H01L27/1237 ,  H01L27/124 ,  H01L27/1251 ,  H01L27/1255 ,  H01L27/3262 ,  H01L29/24 ,  H01L29/7869

    Abstract: A light-emitting device capable of suppressing variation in luminance among pixels is provided. A light-emitting device includes a pixel and first and second circuits. The first circuit has a function of generating a signal including a value of current extracted from the pixel. The second circuit has a function of correcting an image signal by the signal. The pixel includes at least a light-emitting element and first and second transistors. The first transistor has a function of controlling supply of the current to the light-emitting element by the image signal. The second transistor has a function of controlling extraction of the current from the pixel. A semiconductor film of each of the first and second transistors includes a first semiconductor region overlapping with a gate, a second semiconductor region in contact with a source or a drain, and a third semiconductor region between the first and second semiconductor regions.

    Semiconductor Device and Method of Manufacturing the Same
    30.
    发明申请
    Semiconductor Device and Method of Manufacturing the Same 审中-公开
    半导体器件及其制造方法

    公开(公告)号：US20170025549A1

    公开(公告)日：2017-01-26

    申请号：US15284812

    申请日：2016-10-04

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Hiroyuki MIYAKE

    IPC: H01L29/786 ,  H01L29/24 ,  H03K19/017 ,  H01L27/12

    CPC classification number: H01L29/78696 ,  H01L27/1108 ,  H01L27/1214 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1255 ,  H01L27/127 ,  H01L27/1288 ,  H01L29/24 ,  H01L29/41733 ,  H01L29/78624 ,  H01L29/7869 ,  H03K19/01714

    Abstract: It is an object to form a buffer circuit, an inverter circuit, or the like using only n-channel TFTs including an oxide semiconductor layer. A buffer circuit, an inverter circuit, or the like is formed by combination of a first transistor in which a source electrode and a drain electrode each overlap with a gate electrode and a second transistor in which a source electrode overlaps with a gate electrode and a drain electrode does not overlap with the gate electrode. Since the second transistor has such a structure, the capacitance Cp can be small, and VA′ can be large even in the case where the potential difference VDD−VSS is small.

    Abstract translation: 目的是形成仅使用包括氧化物半导体层的n沟道TFT的缓冲电路，逆变器电路等。 缓冲电路，逆变器电路等通过组合第一晶体管形成，其中源电极和漏电极各自与栅电极重叠，第二晶体管与源电极与栅电极重叠， 漏电极不与栅极重叠。 由于第二晶体管具有这样的结构，所以即使在电位差VDD-VSS小的情况下，电容Cp也可以小，VA'也可以很大。

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