公开(公告)号：US20190157506A1

公开(公告)日：2019-05-23

申请号：US16259478

申请日：2019-01-28

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Mae Yi KIM ,  Jin Woong LEE ,  Yeo Jin YOON ,  Seom Geun LEE ,  Yong Woo RYU ,  Keum Ju Lee

IPC: H01L33/14 ,  H01L33/38 ,  H01L33/32 ,  H01L33/42 ,  H01L33/62

CPC classification number: H01L33/145 ,  H01L33/20 ,  H01L33/32 ,  H01L33/38 ,  H01L33/42 ,  H01L33/62

Abstract: A light emitting diode is provided to comprises: a substrate that has an elongated rectangular shape in one direction; a light emitting structure positioned on the substrate and having an opening for exposing a first conductive semiconductor layer; a first electrode pad disposed to be closer to a first corner of the substrate; a second electrode pad disposed to be relatively closer to a second corner of the substrate opposing to the first corner; a first extension extending from the first electrode pad; and a second extension and a third extension extending from the second electrode pad to sides of the first extension, wherein an imaginary line connecting an end of the second extension and an end of the third extension is located between the first electrode pad and the first corner.

公开(公告)号：US20180323346A1

公开(公告)日：2018-11-08

申请号：US15757636

申请日：2016-08-23

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Jin Woong Lee ,  Chan Seob Shin ,  Keum Ju Lee ,  Seom Geun Lee ,  Myoung Hak Yang

IPC: H01L33/42 ,  H01L33/10 ,  H01L33/32 ,  H01L33/62 ,  G02F1/1335

CPC classification number: H01L33/42 ,  G02F1/133603 ,  H01L33/007 ,  H01L33/10 ,  H01L33/32 ,  H01L33/325 ,  H01L33/387 ,  H01L33/62 ,  H01L2933/0016

Abstract: A light-emitting electrode having a ZnO transparent electrode and a method for manufacturing the same are provided. A light-emitting element according to an embodiment comprises: a light-emitting structure comprising a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer; and a ZnO transparent electrode, which is positioned on the second conductive semiconductor layer, which makes an Ohmic contact with the second conductive semiconductor layer, and which comprises monocrystalline ZnO, wherein the diffraction angle of a peak of the ZnO transparent electrode, which results from X-ray diffraction (XRD) omega 2theta (ω2θ) scan, is in the range of ±1% with regard to the diffraction angle of a peak of the second conductive semiconductor layer, which results from XRD ω2θ scan, and the FWHM of a main peak of the ZnO transparent electrode, which results from XRD omega (ω) scan, is equal to or less than 900 arcsec.

公开(公告)号：US20180219130A1

公开(公告)日：2018-08-02

申请号：US15936321

申请日：2018-03-26

Applicant: Seoul Viosys Co., Ltd.

Inventor： Ye Seul Kim ,  Kyoung Wan Kim ,  Yeo Jin Yoon ,  Sang Hyun Oh ,  Keum Ju Lee ,  Jin Woong Lee ,  Da Yeon Jeong ,  Sang Won Woo

IPC: H01L33/36 ,  H01L33/62 ,  H01L33/38 ,  H01L33/20 ,  H01L33/42 ,  H01L33/46 ,  H01L33/08 ,  H01L33/14

CPC classification number: H01L33/36 ,  H01L33/08 ,  H01L33/145 ,  H01L33/20 ,  H01L33/38 ,  H01L33/382 ,  H01L33/385 ,  H01L33/42 ,  H01L33/46 ,  H01L33/62

Abstract: Disclosed herein is an LED chip including electrode pads. The LED chip includes a semiconductor stack including a first conductive type semiconductor layer, a second conductive type semiconductor layer on the first conductive type semiconductor layer, and an active layer interposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer; a first electrode pad located on the second conductive type semiconductor layer opposite to the first conductive type semiconductor layer; a first electrode extension extending from the first electrode pad and connected to the first conductive type semiconductor layer; a second electrode pad electrically connected to the second conductive type semiconductor layer; and an insulation layer interposed between the first electrode pad and the second conductive type semiconductor layer. The LED chip includes the first electrode pad on the second conductive type semiconductor layer, thereby increasing a light emitting area.

公开(公告)号：US09905729B2

公开(公告)日：2018-02-27

申请号：US15354928

申请日：2016-11-17

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Mae Yi Kim ,  Jin Woong Lee ,  Yeo Jin Yoon ,  Seom Geun Lee ,  Yong Woo Ryu ,  Keum Ju Lee

IPC: H01L33/38 ,  H01L33/62 ,  H01L33/14 ,  H01L33/42 ,  H01L33/32

CPC classification number: H01L33/145 ,  H01L33/20 ,  H01L33/32 ,  H01L33/38 ,  H01L33/42 ,  H01L33/62

Abstract: A light emitting diode is provided to comprises: a substrate that has an elongated rectangular shape in one direction; a light emitting structure positioned on the substrate and having an opening for exposing a first conductive semiconductor layer; a first electrode pad disposed to be closer to a first corner of the substrate; a second electrode pad disposed to be relatively closer to a second corner of the substrate opposing to the first corner; a first extension extending from the first electrode pad; and a second extension and a third extension extending from the second electrode pad to sides of the first extension, wherein an imaginary line connecting an end of the second extension and an end of the third extension is located between the first electrode pad and the first corner.

公开(公告)号：US20150236210A1

公开(公告)日：2015-08-20

申请号：US14630273

申请日：2015-02-24

Applicant: Seoul Viosys Co., Ltd.

Inventor： Ye Seul Kim ,  Kyoung Wan Kim ,  Yeo Jin Yoon ,  Sang Hyun Oh ,  Keum Ju Lee ,  Jin Woong Lee ,  Da Yeon Jeong ,  Sang Won Woo

IPC: H01L33/38 ,  H01L33/42 ,  H01L33/00 ,  H01L33/10

CPC classification number: H01L33/387 ,  H01L33/0008 ,  H01L33/10 ,  H01L33/20 ,  H01L33/36 ,  H01L33/38 ,  H01L33/382 ,  H01L33/385 ,  H01L33/40 ,  H01L33/405 ,  H01L33/42 ,  H01L33/44 ,  H01L33/46 ,  H01L33/60 ,  H01L2933/0016 ,  H01L2933/0066

Abstract: Disclosed herein in an LED chip including electrode pads. The LED chip includes a semiconductor stack including a first conductive type semiconductor layer, a second conductive type semiconductor layer on the first conductive type semiconductor layer, and an active layer interposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer, a first electrode pad located on the second conductive type semiconductor layer opposite to the second conductive type semiconductor layer, a first electrode extension extending from the first electrode pad and connected to the first conductive type semiconductor layer, a second electrode pad electrically connected to the second conductive type semiconductor layer, and an insulation layer interposed between the first electrode pad and the second conductive type semiconductor layer. The LED chip includes the first electrode pad on the second conductive type semiconductor layer, thereby increasing a light emitting area.

Abstract translation: 本文公开在包括电极焊盘的LED芯片中。 LED芯片包括：第一导电型半导体层，第一导电类型半导体层上的第二导电型半导体层和介于第一导电型半导体层和第二导电型半导体层之间的有源层的半导体堆叠， 位于与第二导电类型半导体层相对的第二导电类型半导体层上的第一电极焊盘，从第一电极焊盘延伸并连接到第一导电类型半导体层的第一电极延伸部，与第二导电类型半导体层电连接的第二电极焊盘 以及插入在第一电极焊盘和第二导电型半导体层之间的绝缘层。 LED芯片包括在第二导电类型半导体层上的第一电极焊盘，由此增加发光面积。