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    Light emitting diode having distributed Bragg reflector
    21.
    发明授权
    Light emitting diode having distributed Bragg reflector 有权

    公开(公告)号：US10734554B2

    公开(公告)日：2020-08-04

    申请号：US16354815

    申请日：2019-03-15

    Applicant: Seoul Viosys Co., Ltd.

    Inventor： Min Chan Heo ,  Kyoung Wan Kim ,  Ye Seul Kim ,  Yong Woo Ryu

    IPC: H01L33/46 ,  H01L33/42

    Abstract: A light emitting diode including a light emitting structure including an active layer, a first distributed Bragg reflector (DBR) disposed on one side of the light emitting structure to reflect light emitted from the light emitting structure, and an interfacial layer disposed between the light emitting structure and the first DBR, in which the first DBR includes first material layers having a low refractive index and second material layers having a high refractive index alternately stacked one above another, the interfacial layer has a lower refractive index than the first material layers, and has a thickness greater than a thickness of each of the first and second material layers, and one a second material layer of the second material layers that is closest to the interfacial layer includes a first sub-layer and a second sub-layer, the first sub-layer having a density lower than that of the second sub-layer.

    Light-emitting diode with improved light extraction efficiency
    24.
    发明授权
    Light-emitting diode with improved light extraction efficiency 有权
    发光二极管具有提高的光提取效率

    公开(公告)号：US09401456B2

    公开(公告)日：2016-07-26

    申请号：US14740131

    申请日：2015-06-15

    Applicant: Seoul Viosys Co., Ltd.

    Inventor： Jin Woong Lee ,  Kyoung Wan Kim ,  Yeo Jin Yoon ,  Ye Seul Kim

    IPC: H01L33/42 ,  H01L33/38 ,  H01L33/22 ,  H01L33/40 ,  H01L33/20

    CPC classification number: H01L33/405 ,  H01L33/20 ,  H01L33/22 ,  H01L33/38 ,  H01L33/42 ,  H01L33/44

    Abstract: According to the present invention, a light-emitting diode with improved light extraction efficiency comprises: a semiconductor laminated structure including an N-layer, a light-emitting layer, and a P-layer formed on a substrate; an N-type electrode formed on the N-layer; and a P-type electrode formed on the P-layer, wherein the N-type electrode and the P-type electrode include a pad electrode and a dispersion electrode, and the N-type electrode and/or the P-type electrode includes a reflective electrode layer for reflecting light onto the dispersion electrode. Thus, the light-emitting diode has a reflective electrode layer on the electrode so as to improve light extraction efficiency. Further, a reflective layer is patterned beneath a pad unit, thus forming roughness and improving adhesion.

    Abstract translation: 根据本发明，具有提高光提取效率的发光二极管包括：包括形成在基板上的N层，发光层和P层的半导体层叠结构; 形成在N层上的N型电极; 和形成在P层上的P型电极，其中，所述N型电极和所述P型电极包括焊盘电极和分散电极，并且所述N型电极和/或所述P型电极包括： 用于将光反射到分散电极上的反射电极层。 因此，发光二极管在电极上具有反射电极层，以提高光提取效率。 此外，反射层在垫单元下方被图案化，从而形成粗糙度并改善粘附性。

    LIGHT-EMITTING DIODE WITH A PLURALITY OF LIGHT-EMITTING ELEMENTS AND METHOD FOR MANUFACTURING SAME
    26.
    发明申请
    LIGHT-EMITTING DIODE WITH A PLURALITY OF LIGHT-EMITTING ELEMENTS AND METHOD FOR MANUFACTURING SAME 审中-公开
    具有多种发光元件的发光二极管及其制造方法

    公开(公告)号：US20150325621A1

    公开(公告)日：2015-11-12

    申请号：US14806552

    申请日：2015-07-22

    Applicant: Seoul Viosys Co., Ltd.

    Inventor： Ye Seul Kim ,  Kyoung Wan Kim ,  Yeo Jin Yoon

    IPC: H01L27/15 ,  H01L33/00 ,  H01L33/62

    CPC classification number: H01L27/15 ,  H01L27/153 ,  H01L33/005 ,  H01L33/0095 ,  H01L33/20 ,  H01L33/38 ,  H01L33/44 ,  H01L33/62

    Abstract: Disclosed are a light-emitting diode with a plurality of light-emitting elements and a method for manufacturing the same. The light-emitting diode includes: a plurality of light-emitting elements arranged on a substrate; a separation groove for separating adjacent light-emitting elements; an insulation material for filling at least a part of the separation; an electrical line for electrically connecting two adjacent light-emitting elements; and an insulation layer for insulating the electrical line from the side of the light-emitting elements. Each of the light-emitting elements includes a first conduction type semiconductor layer, an activation layer, and a second conduction type semiconductor layer, wherein the first conduction type semiconductor layer has an exposed upper surface obtained by removing the second conduction type semiconductor layer and the activation layer, the exposed upper surface being adjacent to the separation groove, and the electrical line being positioned upon the top of the insulation material. The separation groove is filled with the insulation material so as to prevent cutting of the electrical line and to increase the light-emitting area.

    Abstract translation: 公开了具有多个发光元件的发光二极管及其制造方法。 发光二极管包括：布置在基板上的多个发光元件; 用于分离相邻的发光元件的分离槽; 用于填充至少一部分分离物的绝缘材料; 用于电连接两个相邻的发光元件的电线; 以及用于使电线与发光元件的侧面绝缘的绝缘层。 每个发光元件包括第一导电类型半导体层，激活层和第二导电类型半导体层，其中第一导电类型半导体层具有通过去除第二导电类型半导体层获得的暴露的上表面， 活化层，暴露的上表面邻近分离槽，并且电线位于绝缘材料的顶部。 隔离槽填充有绝缘材料，以防止电线的切断和增加发光面积。

    Light emitting diode having distributed Bragg reflector
    27.
    发明授权
    Light emitting diode having distributed Bragg reflector 有权
    具有分布式布拉格反射器的发光二极管

    公开(公告)号：US08963183B2

    公开(公告)日：2015-02-24

    申请号：US13760637

    申请日：2013-02-06

    Applicant: Seoul Viosys Co., Ltd.

    Inventor： Duk Il Suh ,  Jae Moo Kim ,  Kyoung Wan Kim ,  Yeo Jin Yoon ,  Ye Seul Kim ,  Sang-Hyun Oh ,  Jin Woong Lee

    IPC: H01L33/00 ,  H01L33/46

    CPC classification number: H01L33/46 ,  H01L33/10 ,  H01L33/38 ,  H01L33/42 ,  H01L33/50 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/73265 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2924/00014

    Abstract: A light-emitting diode (LED) according to an exemplary embodiment includes a light-emitting structure arranged on a first surface of a substrate, the light-emitting structure including a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer interposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer. A first distributed Bragg reflector is arranged on a second surface of the substrate opposite to the first surface, the first distributed Bragg reflector to reflect light emitted from the light-emitting structure. The first distributed Bragg reflector has a reflectivity of at least 90% with respect to blue, green, and red light.

    Abstract translation: 根据示例性实施例的发光二极管（LED）包括布置在基板的第一表面上的发光结构，所述发光结构包括第一导电类型半导体层，第二导电类型半导体层， 以及插入在第一导电型半导体层和第二导电型半导体层之间的有源层。 第一分布式布拉格反射器布置在基板的与第一表面相对的第二表面上，第一分布布拉格反射器用于反射从发光结构发射的光。 第一分布布拉格反射器相对于蓝色，绿色和红色光具有至少90％的反射率。

    LIGHT EMITTING DIODE HAVING DISTRIBUTED BRAGG REFLECTOR
    28.
    发明申请
    LIGHT EMITTING DIODE HAVING DISTRIBUTED BRAGG REFLECTOR 审中-公开

    公开(公告)号：US20200212263A1

    公开(公告)日：2020-07-02

    申请号：US16354815

    申请日：2019-03-15

    Applicant: Seoul Viosys Co., Ltd.

    Inventor： Min Chan HEO ,  Kyoung Wan Kim ,  Ye Seul Kim ,  Yong Woo Ryu

    IPC: H01L33/46 ,  H01L33/42

    Abstract: A light emitting diode including a light emitting structure including an active layer, a first distributed Bragg reflector (DBR) disposed on one side of the light emitting structure to reflect light emitted from the light emitting structure, and an interfacial layer disposed between the light emitting structure and the first DBR, in which the first DBR includes first material layers having a low refractive index and second material layers having a high refractive index alternately stacked one above another, the interfacial layer has a lower refractive index than the first material layers, and has a thickness greater than a thickness of each of the first and second material layers, and one a second material layer of the second material layers that is closest to the interfacial layer includes a first sub-layer and a second sub-layer, the first sub-layer having a density lower than that of the second sub-layer.

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