Process for manufacturing a MEMS pressure sensor, and corresponding MEMS pressure sensor

    公开(公告)号:US10578505B2

    公开(公告)日:2020-03-03

    申请号:US15958461

    申请日:2018-04-20

    Abstract: A process for manufacturing a MEMS pressure sensor having a micromechanical structure envisages: providing a wafer having a substrate of semiconductor material and a top surface; forming a buried cavity entirely contained within the substrate and separated from the top surface by a membrane suspended above the buried cavity; forming a fluidic-communication access for fluidic communication of the membrane with an external environment, set at a pressure the value of which has to be determined; forming, suspended above the membrane, a plate made of polysilicon, separated from the membrane by an empty space; and forming electrical-contact elements for electrical connection of the membrane and of the plate, which are designed to form the plates of a sensing capacitor, the value of capacitance of which is indicative of the value of pressure to be detected. A corresponding MEMS pressure sensor having the micromechanical structure is moreover described.

    Microelectromechanical mirror device with piezoelectric actuation and piezoresistive sensing having self-calibration properties

    公开(公告)号:US12242051B2

    公开(公告)日:2025-03-04

    申请号:US17745186

    申请日:2022-05-16

    Abstract: A microelectromechanical mirror device has, in a die of semiconductor material: a fixed structure defining a cavity; a tiltable structure carrying a reflecting region elastically suspended above the cavity; at least a first pair of driving arms coupled to the tiltable structure and carrying respective piezoelectric material regions which may be biased to cause a rotation thereof around at least one rotation axis; elastic suspension elements coupling the tiltable structure elastically to the fixed structure and which are stiff with respect to movements out of the horizontal plane and yielding with respect to torsion; and a piezoresistive sensor configured to provide a detection signal indicative of the rotation of the tiltable structure. At least one test structure is integrated in the die to provide a calibration signal indicative of a sensitivity variation of the piezoresistive sensor in order to calibrate the detection signal.

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