公开(公告)号：US12022710B2

公开(公告)日：2024-06-25

申请号：US17414355

申请日：2019-03-06

Applicant: Samsung Display Co., Ltd.

Inventor： Seunghun Lee ,  Myounghwa Kim ,  Jaybum Kim ,  Kyoung-seok Son ,  Seungjun Lee ,  Jun-hyung Lim

IPC: H10K59/131 ,  H10K71/00 ,  H10K50/844 ,  H10K59/12 ,  H10K77/10 ,  H10K102/00

CPC classification number: H10K59/1315 ,  H10K71/00 ,  H10K50/844 ,  H10K59/1201 ,  H10K77/111 ,  H10K2102/311

Abstract: An organic light emitting display device includes a substrate including a light emitting region, a first active layer having a source region and a drain region disposed in the light emitting region on the substrate, a gate insulation layer disposed on the first active layer, a first gate electrode disposed on the gate insulation layer, a first insulating interlayer disposed on the first gate electrode, a second insulating interlayer disposed on the first insulating interlayer, a first source electrode disposed on the second insulating interlayer, the first source electrode being connected to the source region of the first active layer through a contact hole formed in the gate insulation layer, the first insulating interlayer, and the second insulating interlayer, a protective insulating layer disposed on the first source electrode, a first drain electrode disposed on the protective insulating layer, the first drain electrode being connected to the drain region of the first active layer through a contact hole formed in the gate insulation layer, the first insulating interlayer, and the protective insulating layer, the first drain electrode constituting a driving transistor together with the first active layer, the first gate electrode, and the first source electrode, a switching transistor disposed in the second region between the substrate and the protective insulating layer, a lower electrode disposed on the switching transistor and the driving transistor, a light emitting layer disposed on the lower electrode, and an upper electrode disposed on the light emitting layer.

公开(公告)号：US11677030B2

公开(公告)日：2023-06-13

申请号：US17158824

申请日：2021-01-26

Applicant: Samsung Display Co., Ltd.

Inventor： Sangwoo Sohn ,  Yeonkeon Moon ,  Myounghwa Kim ,  Taesang Kim ,  Geunchul Park ,  Joonseok Park ,  Junhyung Lim ,  Hyelim Choi

IPC: H01L29/786 ,  H01L27/32 ,  H01L29/24 ,  H01L27/12 ,  H01L21/8234

CPC classification number: H01L29/7869 ,  H01L21/823412 ,  H01L27/1222 ,  H01L27/1225 ,  H01L27/3244 ,  H01L29/24 ,  H01L29/78696 ,  H01L27/3262

Abstract: A thin-film transistor substrate includes: an active layer on a substrate, the active layer including: a first semiconductor material layer; a conductor layer on the first semiconductor material layer, and including a metal element; and a second semiconductor material layer on the conductor layer; a gate insulating layer on the active layer; and a gate electrode on the gate insulating layer, and at least partially overlapping with the active layer.

公开(公告)号：US11430859B2

公开(公告)日：2022-08-30

申请号：US16885598

申请日：2020-05-28

Applicant: Samsung Display Co., Ltd.

Inventor： Joon Seok Park ,  Myounghwa Kim ,  Tae Sang Kim ,  Hyungjun Kim ,  Yeon Keon Moon ,  Geunchul Park ,  Sangwoo Sohn ,  Jun Hyung Lim ,  Kyung Jin Jeon ,  Hye Lim Choi

IPC: H01L29/08 ,  H01L27/32

Abstract: A display device includes a first pixel, a second pixel, a first data line connected to the first pixel, and a second data line connected to the second pixel. Each of the first pixel and the second pixel includes a transistor including a conductive layer, a semiconductor layer on the conductive layer, a gate electrode on the semiconductor layer, and a source/drain electrode connected to the semiconductor layer, a capacitor including a first capacitor electrode in a same layer as the gate electrode and a second capacitor electrode on the first capacitor electrode, and a light emitting device on the transistor and the capacitor. The first data line is in a same layer as the source/drain electrode, and the second data line is in a same layer as one of the conductive layer and the second capacitor electrode.

公开(公告)号：US11309429B2

公开(公告)日：2022-04-19

申请号：US16819496

申请日：2020-03-16

Applicant: Samsung Display Co., Ltd.

Inventor： Joonseok Park ,  Jihun Lim ,  Myounghwa Kim ,  Taesang Kim ,  Yeonkeon Moon

IPC: H01L29/786 ,  H01L29/24 ,  H01L23/532 ,  H01L27/32 ,  H01L29/08 ,  H01L29/10 ,  H01L29/417 ,  H01L29/423

Abstract: A thin film transistor includes an active layer over a substrate, a gate electrode over the active layer, a gate line connected with the gate electrode, and a gate insulation film between the active layer and the gate electrode. The active layer includes a channel region overlapping the gate electrode, and a drain region and a source region on respective sides of the channel region. A length of a straight line connecting the drain region and the source region by a shortest distance may be greater than a width of the gate line parallel to the straight line.

公开(公告)号：US10593739B2

公开(公告)日：2020-03-17

申请号：US16133404

申请日：2018-09-17

Applicant: Samsung Display Co., Ltd.

Inventor： Kyoungseok Son ,  Myounghwa Kim ,  Eoksu Kim ,  Taesang Kim ,  Masataka Kano

IPC: H01L51/00 ,  H01L27/32 ,  H01L51/56 ,  H01L51/52 ,  H01L27/12 ,  H01L51/50

Abstract: A method of fabricating a display panel may include forming an oxide semiconductor pattern on a base layer including a first region and a second region, etching first, second, and third insulating layers to form a first groove that overlaps the second region, forming electrodes on the third insulating layer, forming a fourth insulating layer on the third insulating layer to cover the electrodes, thermally treating the fourth insulating layer, forming an organic layer to cover the fourth insulating layer, and forming an organic light emitting diode on the organic layer.

公开(公告)号：US09437624B2

公开(公告)日：2016-09-06

申请号：US14689927

申请日：2015-04-17

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Myounggeun Cha ,  Dongjo Kim ,  Yoonho Khang ,  Myounghwa Kim ,  Kyoungwon Lee

IPC: H01L29/12 ,  H01L27/12 ,  H01L29/786 ,  H01L29/66

CPC classification number: H01L27/1255 ,  H01L27/1274 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78645 ,  H01L29/78648 ,  H01L29/78675 ,  H01L29/78678

Abstract: A thin film transistor (TFT) substrate, a flat display apparatus including the TFT substrate, a method of manufacturing the TFT substrate, and a method of manufacturing the flat display apparatus, the thin film transistor (TFT) substrate including a substrate; a first gate electrode on the substrate, the first gate electrode including a first branch electrode and a second branch electrode that are spaced apart from one another; a polysilicon layer on the first gate electrode and insulated from the first gate electrode; and a second gate electrode on the polysilicon layer, the second gate electrode being insulated from the polysilicon layer and overlying the first and second branch electrodes.

Abstract translation: 薄膜晶体管（TFT）基板，包括TFT基板的平面显示装置，TFT基板的制造方法以及制造平面显示装置的方法，所述薄膜晶体管（TFT）基板包括基板; 在所述基板上的第一栅电极，所述第一栅极包括彼此间隔开的第一分支电极和第二分支电极; 在所述第一栅电极上并与所述第一栅电极绝缘的多晶硅层; 以及在所述多晶硅层上的第二栅电极，所述第二栅电极与所述多晶硅层绝缘并且覆盖所述第一和第二分支电极。