公开(公告)号：US20190131077A1

公开(公告)日：2019-05-02

申请号：US16164869

申请日：2018-10-19

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  NATIONAL INSTITUTE FOR MATERIALS SCIENCE

Inventor： Yoon Chul SON ,  Minoru OSADA ,  Takayoshi SASAKI ,  Chan KWAK ,  Doh Won JUNG ,  Youngjin CHO

IPC: H01G4/33 ,  H01G4/12 ,  H01G4/012 ,  H01G4/248

Abstract: A method of manufacturing a ceramic electronic component includes forming a dielectric layer including a plurality of ceramic nanosheets on a first electrode, treating the dielectric layer with an acid, and forming a second electrode on the dielectric layer, a ceramic electronic component, and an electronic device.

公开(公告)号：US20170110213A1

公开(公告)日：2017-04-20

申请号：US15296261

申请日：2016-10-18

Applicant: SAMSUNG ELECTRONICS CO., LTD

Inventor： Sungwoo HWANG ,  Se Yun KIM ,  Jong Wook ROH ,  Woojin LEE ,  Jongmin LEE ,  Doh Won JUNG ,  Chan KWAK

IPC: H01B1/08

CPC classification number: H01B1/08 ,  G06F3/041 ,  G06F2203/04102

Abstract: An electrical conductor includes: a first conductive layer including a plurality of ruthenium oxide nanosheets, wherein at least one ruthenium oxide nanosheet of the plurality of ruthenium oxide nanosheets includes a halogen, a chalcogen, a Group 15 element, or a combination thereof on a surface of the ruthenium oxide nanosheet.

公开(公告)号：US20160141067A1

公开(公告)日：2016-05-19

申请号：US14940223

申请日：2015-11-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kimoon LEE ,  Sang Il KIM ,  Se Yun KIM ,  Sung Woo HWANG ,  Woojin LEE ,  Hee Jung PARK ,  Yoon Chul SON ,  Hyosug LEE ,  Doh Won JUNG ,  Youngjin CHO ,  Jae-Young CHOI

IPC: H01B1/06

CPC classification number: H01B1/02 ,  C01B19/002 ,  C01B19/007 ,  C01P2002/20 ,  C01P2002/30 ,  C01P2002/90 ,  C30B7/00 ,  C30B29/46 ,  C30B29/60 ,  C30B29/605 ,  C30B29/607 ,  H01B1/06 ,  H01L21/02417 ,  H01L21/02573 ,  H01L21/02609

Abstract: An electrically conductive thin film including: a material including a compound represented by Chemical Formula 1 and having a layered crystal structure, MemAa   Chemical Formula 1 wherein Me is Al, Ga, In, Si, Ge, Sn, A is S, Se, Te, or a combination thereof, and m and a each are independently a number selected so that the compound of Chemical Formula 1 is neutral; and a dopant disposed in the compound of Chemical Formula 1, wherein the dopant is a metal dopant that is different from Me and has an oxidation state which is greater than an oxidation state of Me, a non-metal dopant having a greater number of valence electrons than a number of valence electrons of A in Chemical Formula 1, or a combination thereof, and wherein the compound of Chemical Formula 1 includes a chemical bond which includes a valence electron of an s orbital of Me.

Abstract translation: 一种导电薄膜，包括：包含由化学式1表示并具有层状晶体结构的化合物的材料，其中Me为Al，Ga，In，Si，Ge，Sn，A的MemAa化学式1为S，Se，Te ，或它们的组合，m和a各自独立地选择为使化学式1的化合物为中性的数字; 以及配置在化学式1的化合物中的掺杂剂，其中所述掺杂剂是与Me不同的金属掺杂剂，并且具有大于Me的氧化态的氧化态，具有更大数量化合价的非金属掺杂剂 电子与化学式1中A的多价价电子或其组合，其中化学式1的化合物包括包含Me轨道的价电子的化学键。

公开(公告)号：US20150344305A1

公开(公告)日：2015-12-03

申请号：US14721107

申请日：2015-05-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung Woo HWANG ,  Kyoung-Seok MOON ,  Youngjin CHO ,  Yoon Chul SON ,  Kimoon LEE ,  Doh Won JUNG

IPC: C01B19/00 ,  H01B1/06

CPC classification number: C01B19/002 ,  B22F5/006 ,  B22F2001/0033 ,  C01P2002/20 ,  C01P2002/70 ,  C01P2002/76 ,  C01P2002/90 ,  C01P2006/40 ,  C01P2006/60 ,  C03C17/22 ,  C03C2217/289 ,  C22C28/00 ,  C22C30/00 ,  C30B29/46 ,  H01B1/06 ,  H01L21/02491 ,  H01L21/02502 ,  H01L21/02505 ,  H01L31/022466

Abstract: A conductive material including a first element selected from a transition metal, a platinum-group element, a rare earth element, and a combination thereof, a second element having an atomic radius which is 10 percent less than to 10 percent greater than an atomic radius of the first element, and a chalcogen element, wherein the conductive material has a layered crystal structure.

Abstract translation: 包括从过渡金属，铂族元素，稀土元素及其组合中选择的第一元素的导电材料，其原子半径比原子半径大10％至10％的第二元素 的第一元素和硫属元素，其中导电材料具有层状晶体结构。

公开(公告)号：US20230154679A1

公开(公告)日：2023-05-18

申请号：US17858552

申请日：2022-07-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyeon Cheol PARK ,  Daejin YANG ,  Doh Won JUNG ,  Taewon JEONG ,  Giyoung JO

IPC: H01G4/10 ,  H01G4/30 ,  C01G33/00

CPC classification number: H01G4/10 ,  C01G33/006 ,  H01G4/30 ,  C01P2002/34 ,  C01P2002/54 ,  C01P2002/72 ,  C01P2006/32 ,  C01P2006/40

Abstract: Provided are a dielectric, a device including the same, and a method of preparing the dielectric. The dielectric material includes a NaNbO3 ternary material including a perovskite phase with a Sm element substituted into a Na site such that the NaNbO3 ternary material has a permittivity of 600 or more at 1 kHz, and a temperature coefficient of capacitance (TCC) of about -15% to about 15% in a range of about -55° C. to about +200° C.

公开(公告)号：US20210134941A1

公开(公告)日：2021-05-06

申请号：US17148787

申请日：2021-01-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyungjun KIM ,  Doh Won JUNG ,  Chan KWAK ,  Ki Hong KIM ,  Daejin YANG ,  Chang Soo LEE

IPC: H01L49/02

Abstract: A stacked structure including: a single crystal substrate and, single crystal material on the single crystal substrate, wherein the single crystal material has a same crystallographic orientation as a crystallographic orientation of the single crystal substrate. Also a method of forming the stacked structure, a ceramic electronic component, and a device.

公开(公告)号：US20200027659A1

公开(公告)日：2020-01-23

申请号：US16203934

申请日：2018-11-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Doh Won JUNG ,  Chan KWAK ,  Tae Won JEONG

IPC: H01G4/12 ,  H01G4/30

Abstract: Disclosed are a ceramic dielectric including a composite of a first dielectric and a second dielectric, wherein each of the first dielectric and the second dielectric includes strontium (Sr) and niobium (Nb) and has a different crystal system, a ceramic electronic component, and a device.

公开(公告)号：US20180286586A1

公开(公告)日：2018-10-04

申请号：US15908229

申请日：2018-02-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Doh Won JUNG ,  Jong Wook ROH ,  Daejin YANG ,  Chan KWAK ,  Hyungjun KIM ,  Woojin LEE

IPC: H01G4/12 ,  H01G4/30 ,  H01G4/14 ,  C01G33/00 ,  C07C211/63 ,  C07C211/01

Abstract: A two-dimensional perovskite material, a dielectric material including the same, and a multi-layered capacitor. The two-dimensional perovskite material includes a layered metal oxide including a first layer having a positive charge and a second layer having a negative charge which are laminated, a monolayer nanosheet exfoliated from the layered metal oxide, a nanosheet laminate of a plurality of the monolayer nanosheets, or a combination thereof, wherein the two-dimensional perovskite material a first phase having a two-dimensional crystal structure is included in an amount of greater than or equal to about 80 volume %, based on 100 volume % of the two-dimensional perovskite material, and the two-dimensional perovskite material is represented by Chemical Formula 1.

公开(公告)号：US20170256741A1

公开(公告)日：2017-09-07

申请号：US15268473

申请日：2016-09-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yoon Chul SON ,  In Taek HAN ,  Doh Won JUNG

IPC: H01L51/52 ,  B32B37/14

CPC classification number: H01L51/5256 ,  B32B37/14 ,  B32B2457/00

Abstract: A barrier film including: an organic material layer including a single sub-layer or a plurality of sub-layers; and a metal oxide nanosheet layer including a plurality of metal oxide nanosheets; wherein at least one sub-layer of the organic material layer has a positive charge; and an electronic device includes the barrier film.

公开(公告)号：US20170094723A1

公开(公告)日：2017-03-30

申请号：US15275551

申请日：2016-09-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Se Yun KIM ,  Jong Wook ROH ,  Jongmin LEE ,  Doh Won JUNG ,  Sungwoo HWANG ,  Chan KWAK ,  Jinyoung HWANG

IPC: H05B3/12 ,  C01G23/04 ,  C01G55/00 ,  H01B1/02 ,  B22F1/00

Abstract: An electrical conductor including: a first conductive layer including a plurality of metal nanowires; and a second conductive layer disposed on a surface of the first conductive layer, wherein the second conductive layer includes a plurality of metal oxide nanosheets, wherein in the first conductive layer, a metal nanowire of the plurality of metal nanowires contacts at least two metal oxide nanosheets of the plurality of metal oxide nanosheets, and wherein the plurality of metal oxide nanosheets includes an electrical connection between contacting metal oxide nanosheets.