公开(公告)号：US20180269192A1

公开(公告)日：2018-09-20

申请号：US15971196

申请日：2018-05-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： YONG IL KIM ,  Wan Tae LIM ,  Young Jin CHOI ,  Sung Hyun SIM

IPC: H01L25/16 ,  H01L33/06 ,  H01L33/50 ,  H01L33/32 ,  H01L33/54 ,  H01L27/12

CPC classification number: H01L25/167 ,  H01L27/124 ,  H01L27/15 ,  H01L27/153 ,  H01L33/06 ,  H01L33/32 ,  H01L33/50 ,  H01L33/54

Abstract: A light emitting device package includes a cell array including a plurality of semiconductor light emitting units, and having a first surface and a second surface opposite the first surface, each of the plurality of semiconductor light emitting units having a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer stacked on each other. The light emitting device package may further include a plurality of wavelength conversion units disposed on the first surface of the cell array to correspond to the plurality of semiconductor light emitting units, respectively, each configured to convert a wavelength of light, emitted by a respective one of the plurality of semiconductor light emitting units, into a different wavelength of light, and a partition structure disposed in a space between the plurality of wavelength conversion units, and a plurality of switching units spaced apart from the plurality of wavelength conversion units within the partition structure, and electrically connected to the plurality of semiconductor light emitting units.

公开(公告)号：US20180211993A1

公开(公告)日：2018-07-26

申请号：US15933967

申请日：2018-03-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ji Hye YEON ,  Sung Hyun SIM ,  Wan Tae LIM ,  Yong Il KIM ,  Hanul YOO

IPC: H01L27/15 ,  H01L33/50

Abstract: A light emitting device package includes a substrate for growth having a plurality of light-emitting windows, a plurality of semiconductor light-emitting units corresponding to the plurality of light-emitting windows, each semiconductor light-emitting unit having a first surface contacting the substrate for growth and a second surface opposite the first surface, and each semiconductor light-emitting unit having a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer stacked on each other, a plurality of wavelength conversion units respectively disposed inside the plurality of light-emitting windows, each wavelength conversion unit is configured to provide light having a wavelength different from light emitted by the respective semiconductor light-emitting unit, a metal support layer disposed on at least one surface of each of the plurality of semiconductor light-emitting units and having a lateral surface coplanar with a lateral surface of the substrate for growth, and an insulating layer disposed between each of the plurality of semiconductor light-emitting units and a respective metal support layer.

公开(公告)号：US20180068991A1

公开(公告)日：2018-03-08

申请号：US15802493

申请日：2017-11-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： YONG IL KIM ,  Wan Tae LIM ,  Young Jin CHOI ,  Sung Hyun SIM

IPC: H01L25/16 ,  H01L27/12 ,  H01L33/32 ,  H01L33/06 ,  H01L33/54 ,  H01L33/50

CPC classification number: H01L25/167 ,  H01L27/124 ,  H01L33/06 ,  H01L33/32 ,  H01L33/50 ,  H01L33/54

Abstract: A light emitting device package includes a cell array including a plurality of semiconductor light emitting units, and having a first surface and a second surface opposite the first surface, each of the plurality of semiconductor light emitting units having a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer stacked on each other. The light emitting device package may further include a plurality of wavelength conversion units disposed on the first surface of the cell array to correspond to the plurality of semiconductor light emitting units, respectively, each configured to convert a wavelength of light, emitted by a respective one of the plurality of semiconductor light emitting units, into a different wavelength of light, and a partition structure disposed in a space between the plurality of wavelength conversion units, and a plurality of switching units spaced apart from the plurality of wavelength conversion units within the partition structure, and electrically connected to the plurality of semiconductor light emitting units.

公开(公告)号：US20170288093A1

公开(公告)日：2017-10-05

申请号：US15389808

申请日：2016-12-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Nam Goo CHA ,  Yong Il KIM ,  Young Soo PARK ,  Sung Hyun SIM ,  Hanul YOO

IPC: H01L33/08 ,  H01L33/50 ,  G09G3/20 ,  H01L33/46 ,  H01L33/62 ,  G09G3/32 ,  H01L33/38 ,  H01L33/58

CPC classification number: H01L33/08 ,  G09G3/2003 ,  G09G3/32 ,  H01L25/0756 ,  H01L33/382 ,  H01L33/46 ,  H01L33/504 ,  H01L33/58 ,  H01L33/62 ,  H01L2224/16145

Abstract: An LED light source module includes a light emitting stacked body, and a first through electrode structure and a second through electrode structure passing through a portion of the light emitting stacked body. The light emitting stacked body includes a base insulating layer, light emitting layers sequentially stacked on the base insulating layer, each of the light emitting layers including a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer disposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, and an interlayer insulating layer disposed between the light emitting layers. The first through electrode structure is connected to the first conductivity-type semiconductor layer of each of the light emitting layers, and the second through electrode structure is connected to any one or any combination of the second conductivity-type semiconductor layer of each of the light emitting layers.

公开(公告)号：US20160064607A1

公开(公告)日：2016-03-03

申请号：US14698717

申请日：2015-04-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Geon Wook YOO ,  Sung Hyun SIM ,  Dong Kuk LEE ,  Hye Seok NOH

IPC: H01L33/24 ,  H01L33/08

CPC classification number: H01L33/24 ,  H01L33/08 ,  H01L33/145 ,  H01L33/18 ,  H01L33/32 ,  H01L33/385 ,  H01L33/405 ,  H01L33/42 ,  H01L33/44

Abstract: A nanostructure semiconductor light emitting device may include: a base layer formed of a first conductivity-type semiconductor material; an insulating layer disposed on the base layer and having a plurality of openings exposing portions of the base layer; a plurality of nanocores disposed on the exposed portions of the base layer and formed of a first conductivity-type semiconductor material, each of which including a tip portion having a crystal plane different from that of a side surface thereof; a first high resistance layer disposed on the tip portion of the nanocore and formed of an oxide containing an element which is the same as at least one of elements constituting the nanocore; an active layer disposed on the first high resistance layer and the side surface of the nanocore; and a second conductivity-type semiconductor layer disposed on the active layer.

Abstract translation: 纳米结构半导体发光器件可以包括：由第一导电型半导体材料形成的基极层; 绝缘层，其设置在所述基底层上并且具有暴露所述基底层的部分的多个开口; 多个纳米孔，其设置在所述基底层的所述露出部分上并由第一导电型半导体材料形成，所述第一导电型半导体材料包括具有不同于其侧表面的晶面的尖端部分; 第一高电阻层，设置在纳米孔的尖端部分上，由含有与构成纳米孔的元素中至少一个元素相同的元素的氧化物形成; 设置在所述第一高电阻层和所述纳米孔的侧表面上的有源层; 以及设置在有源层上的第二导电型半导体层。