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公开(公告)号：US20200328329A1
公开(公告)日：2020-10-15
申请号：US16913201
申请日：2020-06-26
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Sung Hyun SIM , Yong II KIM , Ha Nul YOO , Ji Hye YEON , Jun Bu YOUN , Ji Hoon YUN , Su Hyun JO
Abstract: A semiconductor light emitting device includes a plurality of light emitting structures, an isolation layer covering side surfaces of the plurality of light emitting structures and insulating the plurality of light emitting structures from one another, a partition layer formed on the isolation layer, a first protective layer covering top surfaces of the plurality of light emitting structures and side walls of the partition layer, a reflective layer covering the first protective layer and disposed on the side walls of the partition layer, and a second protective layer covering the reflective layer.
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公开(公告)号：US20180047780A1
公开(公告)日：2018-02-15
申请号：US15449396
申请日：2017-03-03
Applicant: Samsung Electronics Co., Ltd.
Inventor： Ji Hye YEON , Sung Hyun SIM , Wan Tae LIM , Yong Il KIM , Hanul YOO
CPC classification number: H01L27/156 , H01L33/50
Abstract: A light emitting device package includes a substrate for growth having a plurality of light-emitting windows, a plurality of semiconductor light-emitting units corresponding to the plurality of light-emitting windows, each semiconductor light-emitting unit having a first surface contacting the substrate for growth and a second surface opposite the first surface, and each semiconductor light-emitting unit having a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer stacked on each other, a plurality of wavelength conversion units respectively disposed inside the plurality of light-emitting windows, each wavelength conversion unit is configured to provide light having a wavelength different from light emitted by the respective semiconductor light-emitting unit, a metal support layer disposed on at least one surface of each of the plurality of semiconductor light-emitting units and having a lateral surface coplanar with a lateral surface of the substrate for growth, and an insulating layer disposed between each of the plurality of semiconductor light-emitting units and a respective metal support layer.
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公开(公告)号：US20150280062A1
公开(公告)日：2015-10-01
申请号：US14605551
申请日：2015-01-26
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Geon Wook YOO , Kyung Wook HWANG , Yong Min KIM , Sung Hyun SIM
CPC classification number: H01L33/06 , B82Y20/00 , H01L33/0025 , H01L33/08 , H01L33/145 , H01L33/18 , H01L33/24 , H01L33/44 , H01L33/52 , H01L2224/16245 , H01L2224/48091 , H01L2224/48227 , H01L2924/181 , H01L2924/00014 , H01L2924/00012
Abstract: A nanostructure semiconductor light emitting device includes a base layer, an insulating layer, a plurality of light emitting nanostructures, and a contact electrode. The base layer is formed of a first conductivity-type semiconductor material. The insulating layer is disposed on the base layer. Each light emitting nanostructure is disposed in a respective opening of a plurality of openings in the base layer, and includes a nanocore formed of the first conductivity-type semiconductor material, and an active layer and a second conductivity-type semiconductor layer sequentially disposed on a surface of the nanocore. The contact electrode is spaced apart from the insulating layer and is disposed on a portion of the second conductivity-type semiconductor layer. A tip portion of the light emitting nanostructure has crystal planes different from those on side surfaces of the light emitting nanostructure.
Abstract translation: 纳米结构半导体发光器件包括基底层，绝缘层，多个发光纳米结构和接触电极。 基层由第一导电型半导体材料形成。 绝缘层设置在基底层上。 每个发光纳米结构设置在基层中的多个开口的相应开口中，并且包括由第一导电型半导体材料形成的纳米孔，以及顺序地设置在第一导电类型半导体材料上的有源层和第二导电类型半导体层 纳米孔的表面。 接触电极与绝缘层隔开并设置在第二导电型半导体层的一部分上。 发光纳米结构的尖端部分具有与发光纳米结构的侧表面不同的晶面。
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公开(公告)号：US20210351330A1
公开(公告)日：2021-11-11
申请号：US17385193
申请日：2021-07-26
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Sung Hyun SIM , Yong II KIM , Ha Nul YOO , Ji Hye YEON , Jun Bu YOUN , Ji Hoon YUN , Su Hyun JO
Abstract: A semiconductor light emitting device includes a plurality of light emitting structures, an isolation layer covering side surfaces of the plurality of light emitting structures and insulating the plurality of light emitting structures from one another, a partition layer formed on the isolation layer, a first protective layer covering top surfaces of the plurality of light emitting structures and side walls of the partition layer, a reflective layer covering the first protective layer and disposed on the side walls of the partition layer, and a second protective layer covering the reflective layer.
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公开(公告)号：US20190312182A1
公开(公告)日：2019-10-10
申请号：US16442870
申请日：2019-06-17
Applicant: Samsung Electronics Co., Ltd.
Inventor： Wan Tae LIM , Sung Hyun SIM , Hanul YOO , YONG IL KIM , Hye Seok NOH , Ji Hye YEON
Abstract: A method of fabricating a light emitting device package includes forming a plurality of semiconductor light emitting parts, each having a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer on a growth substrate, forming a partition structure having a plurality of light emitting windows on the growth substrate, filling each of the plurality of light emitting windows with a resin having a phosphor, and forming a plurality of wavelength conversion parts by planarizing a surface of the resin.
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Patent Agency Ranking
公开(公告)号：US20180047880A1
公开(公告)日：2018-02-15
申请号：US15486982
申请日：2017-04-13
Applicant: Samsung Electronics Co., Ltd.
Inventor： Wan Tae LIM , Sung Hyun SIM , Hanul YOO , YONG IL KIM , Hye Seok NOH , Ji Hye YEON
CPC classification number: H01L33/507 , H01L27/156 , H01L33/504 , H01L33/54 , H01L33/56 , H01L33/58 , H01L33/62 , H01L2933/0041 , H01L2933/005 , H01L2933/0058
Abstract: A method of fabricating a light emitting device package includes forming a plurality of semiconductor light emitting parts, each having a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer on a growth substrate, forming a partition structure having a plurality of light emitting windows on the growth substrate, filling each of the plurality of light emitting windows with a resin having a phosphor, and forming a plurality of wavelength conversion parts by planarizing a surface of the resin.
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公开(公告)号：US20170250318A1
公开(公告)日：2017-08-31
申请号：US15337215
申请日：2016-10-28
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Nam Goo CHA , Sung Hyun SIM , Wan tae LIM , Hye Seok NOH , Hanul YOO
CPC classification number: H01L33/505 , H01L27/153 , H01L33/504 , H01L33/60 , H01L2933/0033 , H01L2933/0041
Abstract: A method of manufacturing a light emitting device package is provided. The method includes preparing a film strip including one or more light blocking regions and one or more wavelength conversion regions, preparing light emitting devices, each including one or more light emitting regions, bonding the film strip to the light emitting devices so as to dispose the one or more wavelength conversion regions on the one or more light emitting regions of each of the light emitting devices, and cutting the film strip and the light emitting devices into individual device units.
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公开(公告)号：US20200105980A1
公开(公告)日：2020-04-02
申请号：US16299422
申请日：2019-03-12
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Sung Hyun SIM , Yong Il KIM , Ha Nul YOO , Ji Hye YEON , Jun Bu YOUN , Ji Hoon YUN , Su Hyun JO
Abstract: A semiconductor light emitting device includes a plurality of light emitting structures, an isolation layer covering side surfaces of the plurality of light emitting structures and insulating the plurality of light emitting structures from one another, a partition layer formed on the isolation layer, a first protective layer covering top surfaces of the plurality of light emitting structures and side walls of the partition layer, a reflective layer covering the first protective layer and disposed on the side walls of the partition layer, and a second protective layer covering the reflective layer.
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公开(公告)号：US20190189595A1
公开(公告)日：2019-06-20
申请号：US16008276
申请日：2018-06-14
Applicant: Samsung Electronics Co., Ltd.
Inventor： Dong Gun LEE , Yong Il KIM , Hye Seok NOH , Han Kyu SEONG , Sung Hyun SIM , Ha Nul YOO
CPC classification number: H01L25/0753 , H01L27/1214 , H01L33/06 , H01L33/30 , H01L33/32 , H01L33/405 , H01L33/504 , H01L33/505 , H01L33/508 , H01L33/54 , H01L33/60 , H01L33/62 , H01L2933/0033 , H01L2933/0041 , H01L2933/005 , H01L2933/0058
Abstract: A light emitting device package includes a first wavelength conversion portion and a second wavelength conversion portion to provide a wavelength of incident light to provide light having a converted wavelength, a light-transmissive partition structure extending along side surfaces of the first and second wavelength conversion portions along a thickness direction to separate the first and second wavelength conversion portions part from each other along a direction crossing the thickness direction, and a cell array including a first light emitting device, a second light emitting device and a third light emitting device, overlapping the first wavelength conversion portion, the second wavelength conversion portion and the light-transmissive partition structure, respectively, along the thickness direction.
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公开(公告)号：US20180286915A1
公开(公告)日：2018-10-04
申请号：US15788933
申请日：2017-10-20
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Ji Hye YEON , Han Kyu SEONG , Wan Tae LIM , Sung Hyun SIM , Hanul YOO
CPC classification number: H01L27/153 , H01L25/0753 , H01L33/0079 , H01L33/22 , H01L33/32 , H01L33/38 , H01L33/44 , H01L33/507 , H01L33/62
Abstract: A semiconductor light emitting device includes a plurality of light emitting cells including a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer between the first and second conductivity type semiconductor layers, an insulating layer on the plurality of light emitting cells and having a first opening and a second opening defining a first contact region of the first conductivity type semiconductor layer and a second contact region of the second conductivity type semiconductor layer, respectively, in each of the plurality of light emitting cells, a connection electrode on the insulating layer and connecting the first contact region and the second contact region to electrically connect the plurality of light emitting cells to each other, a transparent support substrate on the insulating layer and the connection electrode, and a transparent bonding layer between the insulating layer and the transparent support substrate.
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