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公开(公告)号：US20190371779A1
公开(公告)日：2019-12-05
申请号：US16185602
申请日：2018-11-09
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Ji Hye YEON , Su Hyun JO , Sung Hyun SIM , Ha Nul YOO , Yong Il KIM , Han Kyu SEONG
Abstract: A method of manufacturing a display module includes preparing a first substrate structure including an light-emitting diode (LED) array containing a plurality of LED cells, electrode pads connected to the first and second conductivity-type semiconductor layers, and a first bonding layer covering the LED array; preparing a second substrate structure including a plurality of thin-film transistor (TFT) cells disposed on a second substrate, and each having a source region, a drain region and a gate electrode disposed therebetween, the second substrate structure being provided by forming a circuit region, in which connection portions disposed to correspond to the electrode pads are exposed to one surface thereof, and by forming a second bonding layer covering the circuit region, respectively planarizing the first and second bonding layers, and bonding the first and second substrate structures to each other.
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2.发明申请公开(公告)号：US20190333964A1
公开(公告)日：2019-10-31
申请号：US16503956
申请日：2019-07-05
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jin Sub LEE , Han Kyu SEONG , Yong Il KIM , Jung Sub KIM , Seul Gee LEE
Abstract: A pixel of a light emitting diode module, display panel or other device, may comprise different colored sub-pixels, where one of the sub-pixels comprises a wavelength converting material, such as phosphor, to convert light emitted from an associated light emitting diode of that sub-pixel into a color other than the main color of light emitted from that sub-pixel. The wavelength converting material may have an amount selected to tune the color coordinates of the pixel. The amount of wavelength converting material may be determined in response to measuring the intensity of the spectrum of light emitted by the light emitting diode of the sub-pixel, or similarly manufactured sub-pixels, on which the wavelength converting material is to be formed. Methods of manufacturing the same are also disclosed.
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公开(公告)号：US20190189853A1
公开(公告)日：2019-06-20
申请号：US16011903
申请日：2018-06-19
Applicant: Samsung Electronics Co., Ltd.
Inventor： Hanul YOO , Sung Hyun SIM , Ji Hye YEON , Yong Il KIM , Dong Gun LEE
CPC classification number: H01L33/385 , H01L33/40 , H01L33/46 , H01L33/504 , H01L2933/0016 , H01L2933/005
Abstract: A light emitting device package comprises a light emitting cell array including a first light emitting cell, a second light emitting cell, and a third light emitting cell, and including a first surface, and a second surface, disposed to oppose the first surface; a plurality of metal pillars disposed on the first surface of the light emitting cell array and electrically connected to the first light emitting cell, the second light emitting cell, and the third light emitting cell; and a molding portion encapsulating the light emitting cell array and the plurality of metal pillars, wherein the plurality of metal pillars include a conductive layer and a bonding layer disposed below the conductive layer, and an interface between the bonding layer and the conductive layer is higher than a lower surface of the molding portion.
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公开(公告)号：US20190181316A1
公开(公告)日：2019-06-13
申请号：US16020071
申请日：2018-06-27
Applicant: Samsung Electronics Co., Ltd.
Inventor： Hye Seok NOH , Young Jin CHOI , Yong Il KIM , Han Kyu SEONG , Dong Gun LEE , Jin Sub LEE
CPC classification number: H01L33/62 , H01L25/0753 , H01L27/156 , H01L33/0095 , H01L33/26 , H01L33/40 , H01L33/504 , H01L33/507 , H01L33/56 , H01L2933/005 , H04N5/2256
Abstract: A method of manufacturing a light emitting device includes forming light emitting devices on a support portion, each of the light emitting devices including first to third light emitting cells respectively emitting light of different colors; supplying test power to at least a portion of the light emitting devices using a multi-probe; acquiring an image from the light emitted from the portion of the light emitting devices to which the test power is supplied using an image sensor; identifying normal light emitting devices of the portion of the light emitting devices by determining whether a defect is present in each of the light emitting devices of the portion of the light emitting devices by comparing the image acquired by the image sensor with a reference image; and based on the identifying step, measuring optical characteristics of each of the light emitting devices identified as normal of the portion of the light emitting devices.
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公开(公告)号：US20190157515A1
公开(公告)日：2019-05-23
申请号：US16255466
申请日：2019-01-23
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Yong Il KIM , Hyong Sik WON , Wan Tae LIM , Nam Goo CHA
IPC: H01L33/50 , H01L33/32 , H01L25/075 , H01L33/44 , H01L33/08
Abstract: A light emitting device package may include: a light emitting structure including a plurality of light emitting regions configured to emit light, respectively; a plurality of light adjusting layers formed above the light emitting regions to change characteristics of the light emitted from the light emitting regions, respectively; a plurality of electrodes configured to control the light emitting regions to emit the light, respectively; and an isolation insulating layer disposed between the light emitting regions to insulate the light emitting regions from one another, the isolation insulating layer forming a continuous structure with respect to the light emitting regions.
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Patent Agency Ranking
6.发明申请公开(公告)号：US20190103438A1
公开(公告)日：2019-04-04
申请号：US15984508
申请日：2018-05-21
Applicant: Samsung Electronics Co., Ltd.
Inventor： Nam Goo CHA , Yong Il KIM , Young Soo PARK
IPC: H01L27/15
CPC classification number: H01L27/156 , H01L25/0655 , H01L25/0753 , H01L33/0012 , H01L33/0079 , H01L33/0095 , H01L33/44 , H01L33/50 , H01L33/507 , H01L33/52 , H01L33/62 , H01L2933/0041 , H01L2933/005 , H01L2933/0066
Abstract: In some examples, a semiconductor device may comprise a semiconductor chip including a plurality of pixels, each pixel formed of a plurality of sub-pixels, such as a red sub-pixel, green sub-pixel and blue sub-pixel. Each sub-pixel may comprise a light emitting diode. A first signal line may connect to signal terminals of a first group sub-pixels (e.g., arranged in the same row), and a second signal line may connect to common terminals of a second group of sub-pixels (e.g., arranged in the same column). The number of chip pads may thus be reduced to provide increased design flexibility in location and/or allowing an increase in chip pad size. In some examples, a light transmissive material may be formed in openings of a semiconductor growth substrate on which light emitting cells of the sub-pixels were grown. The light transmissive material of some of the sub-pixels may comprise a wavelength conversion material and/or filter. Exemplary display panels and methods of manufacturing semiconductor devices and display panels are also disclosed.
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公开(公告)号：US20180211993A1
公开(公告)日：2018-07-26
申请号：US15933967
申请日：2018-03-23
Applicant: Samsung Electronics Co., Ltd.
Inventor： Ji Hye YEON , Sung Hyun SIM , Wan Tae LIM , Yong Il KIM , Hanul YOO
Abstract: A light emitting device package includes a substrate for growth having a plurality of light-emitting windows, a plurality of semiconductor light-emitting units corresponding to the plurality of light-emitting windows, each semiconductor light-emitting unit having a first surface contacting the substrate for growth and a second surface opposite the first surface, and each semiconductor light-emitting unit having a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer stacked on each other, a plurality of wavelength conversion units respectively disposed inside the plurality of light-emitting windows, each wavelength conversion unit is configured to provide light having a wavelength different from light emitted by the respective semiconductor light-emitting unit, a metal support layer disposed on at least one surface of each of the plurality of semiconductor light-emitting units and having a lateral surface coplanar with a lateral surface of the substrate for growth, and an insulating layer disposed between each of the plurality of semiconductor light-emitting units and a respective metal support layer.
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公开(公告)号：US20170288093A1
公开(公告)日：2017-10-05
申请号：US15389808
申请日：2016-12-23
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Nam Goo CHA , Yong Il KIM , Young Soo PARK , Sung Hyun SIM , Hanul YOO
CPC classification number: H01L33/08 , G09G3/2003 , G09G3/32 , H01L25/0756 , H01L33/382 , H01L33/46 , H01L33/504 , H01L33/58 , H01L33/62 , H01L2224/16145
Abstract: An LED light source module includes a light emitting stacked body, and a first through electrode structure and a second through electrode structure passing through a portion of the light emitting stacked body. The light emitting stacked body includes a base insulating layer, light emitting layers sequentially stacked on the base insulating layer, each of the light emitting layers including a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer disposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, and an interlayer insulating layer disposed between the light emitting layers. The first through electrode structure is connected to the first conductivity-type semiconductor layer of each of the light emitting layers, and the second through electrode structure is connected to any one or any combination of the second conductivity-type semiconductor layer of each of the light emitting layers.
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公开(公告)号：US20200303593A1
公开(公告)日：2020-09-24
申请号：US16571741
申请日：2019-09-16
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Young Jo TAK , Joo Sung KIM , Jong Uk SEO , Dong Gun LEE , Yong Il KIM
IPC: H01L33/38 , H01L33/52 , H01L33/62 , H01L25/075
Abstract: A semiconductor light emitting device includes a first conductivity-type semiconductor layer; an active layer covering a portion of the first conductivity-type semiconductor layer; and a second conductivity-type semiconductor layer covering a portion of the active layer, and sidewalls of the second conductivity-type semiconductor layer are spaced apart from sidewalls of the active layer along a horizontal direction.
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公开(公告)号：US20200105980A1
公开(公告)日：2020-04-02
申请号：US16299422
申请日：2019-03-12
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Sung Hyun SIM , Yong Il KIM , Ha Nul YOO , Ji Hye YEON , Jun Bu YOUN , Ji Hoon YUN , Su Hyun JO
Abstract: A semiconductor light emitting device includes a plurality of light emitting structures, an isolation layer covering side surfaces of the plurality of light emitting structures and insulating the plurality of light emitting structures from one another, a partition layer formed on the isolation layer, a first protective layer covering top surfaces of the plurality of light emitting structures and side walls of the partition layer, a reflective layer covering the first protective layer and disposed on the side walls of the partition layer, and a second protective layer covering the reflective layer.
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