公开(公告)号：US12184469B2

公开(公告)日：2024-12-31

申请号：US18168320

申请日：2023-02-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dong Han Kim ,  Sung Soo Kim ,  Wan Kim

IPC: H04L25/06 ,  H03K5/01 ,  H04L27/38 ,  H03K5/00

Abstract: An electronic device includes a feedback oscillator configured to output a first oscillation signal and a second oscillation signal, the second oscillation signal having a defined phase difference from the first oscillation signal, the feedback oscillator including a phase shifter configured to receive the first oscillation signal and output the second oscillation signal, an up-conversion mixer configured to output a first loopback signal obtained by mixing the first oscillation signal with a reference tone signal, and output a second loopback signal obtained by mixing the second oscillation signal with the reference tone signal, and a receiver configured to generate a first reference IQ signal from the first loopback signal, generate a second reference IQ signal from the second loopback signal, and compare an actual phase difference between the first reference IQ signal and the second reference IQ signal with the defined phase difference.

公开(公告)号：US12034042B2

公开(公告)日：2024-07-09

申请号：US18350187

申请日：2023-07-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Gyuhwan Ahn ,  Sung Soo Kim ,  Chaeho Na ,  Woongsik Nam ,  Donghyun Roh

IPC: H01L29/06 ,  H01L21/02 ,  H01L21/762 ,  H01L21/8234 ,  H01L27/088 ,  H01L29/08 ,  H01L29/423 ,  H01L29/66 ,  H01L29/78 ,  H01L29/786

CPC classification number: H01L29/0653 ,  H01L27/0886 ,  H01L29/0673 ,  H01L29/0847 ,  H01L29/42392 ,  H01L29/7851 ,  H01L29/78618 ,  H01L29/78696

Abstract: A semiconductor device includes first and second active patterns on a substrate, the first and second active patterns adjacent to each other in a first direction with a first trench between the first and second active patterns, third and fourth active patterns on the substrate, the third and fourth active patterns adjacent to each other in the first direction with a second trench between the third and fourth active patterns. The semiconductor device includes a first device isolation layer in the first trench, and a second device isolation layer in the second trench. A width of the second trench in the first direction is greater than a width of the first trench in the first direction. The second device isolation layer includes a first protrusion and a second protrusion which protrude from a top surface of the second device isolation layer.

公开(公告)号：US11735626B2

公开(公告)日：2023-08-22

申请号：US17667996

申请日：2022-02-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Gyuhwan Ahn ,  Sung Soo Kim ,  Chaeho Na ,  Woongsik Nam ,  Donghyun Roh

IPC: H01L29/06 ,  H01L29/08 ,  H01L29/78 ,  H01L29/423 ,  H01L29/786 ,  H01L21/02 ,  H01L21/762 ,  H01L21/8234 ,  H01L29/66 ,  H01L27/088

CPC classification number: H01L29/0653 ,  H01L21/02532 ,  H01L21/02603 ,  H01L21/76229 ,  H01L21/823412 ,  H01L21/823418 ,  H01L21/823431 ,  H01L21/823475 ,  H01L21/823481 ,  H01L27/0886 ,  H01L29/0673 ,  H01L29/0847 ,  H01L29/42392 ,  H01L29/66795 ,  H01L29/7851 ,  H01L29/78618 ,  H01L29/78696

Abstract: A semiconductor device includes first and second active patterns on a substrate, the first and second active patterns adjacent to each other in a first direction with a first trench between the first and second active patterns, third and fourth active patterns on the substrate, the third and fourth active patterns adjacent to each other in the first direction with a second trench between the third and fourth active patterns. The semiconductor device includes a first device isolation layer in the first trench, and a second device isolation layer in the second trench. A width of the second trench in the first direction is greater than a width of the first trench in the first direction. The second device isolation layer includes a first protrusion and a second protrusion which protrude from a top surface of the second device isolation layer.

公开(公告)号：US20220393030A1

公开(公告)日：2022-12-08

申请号：US17667608

申请日：2022-02-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chae Ho NA ,  Sung Soo Kim ,  Sun Ki Min ,  Dong Hyun Roh

IPC: H01L29/78 ,  H01L29/417

Abstract: Semiconductor devices and methods of forming the same are provided. The semiconductor devices may include a first fin-type pattern and a second fin-type pattern on a substrate, a first epitaxial pattern on the first fin-type pattern, a second epitaxial pattern on the second fin-type pattern, and a lower field insulating film on the substrate and extends on a sidewall of the first fin-type pattern and a sidewall of the second fin-type pattern, wherein the lower field insulating film includes a protrusion protruding in a third direction. The protrusion of the lower field insulating film may be between the first fin-type pattern and the second fin-type pattern, and a vertical level of a top surface of the protrusion of the lower field insulating film increases and then decreases with increasing distance from the sidewall of the first fin-type pattern.

公开(公告)号：US11233552B2

公开(公告)日：2022-01-25

申请号：US16814275

申请日：2020-03-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Eun Sung Jeon ,  Min Ki Ahn ,  Wook Bong Lee ,  Sung Soo Kim ,  Joon Suk Kim

IPC: H04B7/0456 ,  H04B7/06 ,  H04B17/336 ,  H04L1/00 ,  H04B7/0452

Abstract: Provided is method for generating precoder in a Multi User Multiple Input and Multiple Output (MU MIMO) communication system. The method involves receiving channel information and quality information of a channel from a plurality of stations. It is determined whether a first condition is satisfied on the basis of the received information, if so, a type of matrix inversion is selected from among a plurality of matrix inversion types for precoding. It is determined whether a second condition is satisfied on the basis of the provided information, and a type of decomposition from a plurality of decomposition types for precoding is selected if the second condition is satisfied. A precoder is generated on the basis of the selected result.

公开(公告)号：US10854754B2

公开(公告)日：2020-12-01

申请号：US16932076

申请日：2020-07-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung Soo Kim ,  Dong Hyun Roh ,  Koung Min Ryu ,  Sang Jin Hyun

IPC: H01L29/78 ,  H01L29/417 ,  H01L29/66 ,  H01L29/423 ,  H01L27/12 ,  H01L27/092

Abstract: A semiconductor device includes an active fin on a substrate, a device isolation film covering a lower portion of the active fin, a gate structure covering the active fin and the device isolation film, and a gate spacer on a side wall of the gate structure, wherein a side wall of the gate structure disposed on the device isolation film is inclined at a uniform inclination from a point higher than a half of a height of the gate structure to a bottom of the gate structure, and an inner side wall of the gate spacer on the device isolation film is inclined at a uniform inclination from a point higher than a half of a height of the gate spacer to a bottom of the gate spacer while forming an acute angle with a bottom surface of the gate spacer.

公开(公告)号：US10763254B2

公开(公告)日：2020-09-01

申请号：US15333545

申请日：2016-10-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung Soo Kim ,  Gi Gwan Park ,  Jung Hun Choi ,  Koung Min Ryu ,  Sun Jung Lee

IPC: H01L27/088 ,  H01L21/8234 ,  H01L23/485 ,  H01L23/528 ,  H01L29/423 ,  H01L27/092 ,  H01L29/739

Abstract: A semiconductor device includes a substrate including a first region, and a second region, a first gate structure and a second gate structure on the substrate of the first region, a third gate structure and a fourth gate structure on the substrate of the second region, a first interlayer insulating film on the substrate of the first region and including a first lower interlayer insulating film and a first upper interlayer insulating film, a second interlayer insulating film on the substrate of the second region and including a second lower interlayer insulating film and a second upper interlayer insulating film, a first contact between the first gate structure and the second gate structure and within the first interlayer insulating film, and a second contact formed between the third gate structure and the fourth gate structure and within the second interlayer insulating film.

公开(公告)号：US09762303B2

公开(公告)日：2017-09-12

申请号：US15042853

申请日：2016-02-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung Soo Kim ,  Min Chull Paik ,  Young Sik Byun ,  Jae Ryong Lee ,  Sung Chul Park

IPC: H04B7/06 ,  H01Q1/24 ,  H04B7/08 ,  H04B17/318 ,  H04B1/40 ,  H01Q21/28 ,  H04W52/02

CPC classification number: H04B7/0608 ,  H01Q1/241 ,  H01Q1/242 ,  H01Q21/28 ,  H04B1/40 ,  H04B7/0814 ,  H04B7/082 ,  H04B7/0822 ,  H04B7/0825 ,  H04B7/0834 ,  H04B17/318 ,  H04W52/0245 ,  Y02D70/1222 ,  Y02D70/1242 ,  Y02D70/1262 ,  Y02D70/142 ,  Y02D70/144 ,  Y02D70/164 ,  Y02D70/166 ,  Y02D70/168 ,  Y02D70/24 ,  Y02D70/26 ,  Y02D70/40 ,  Y02D70/444

Abstract: A method performed in an electronic device is provided. The method includes: collecting operation information on at least one of a data communication operation, a paging operation, and a voice communication operation of a first antenna, a second antenna, or a third antenna; determining at least one antenna to be used of the first antenna, the second antenna, and third antenna based on at least part of the collected operation information; and performing communication by using the determined antenna.

公开(公告)号：US12211846B2

公开(公告)日：2025-01-28

申请号：US18415863

申请日：2024-01-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung Soo Kim ,  Gi Gwan Park ,  Jung Hun Choi ,  Koung Min Ryu ,  Sun Jung Lee

IPC: H01L27/088 ,  H01L21/8234 ,  H01L23/485 ,  H01L23/528 ,  H01L27/092 ,  H01L29/423 ,  H01L29/739

Abstract: A semiconductor device includes a substrate including a first region, and a second region, a first gate structure and a second gate structure on the substrate of the first region, a third gate structure and a fourth gate structure on the substrate of the second region, a first interlayer insulating film on the substrate of the first region and including a first lower interlayer insulating film and a first upper interlayer insulating film, a second interlayer insulating film on the substrate of the second region and including a second lower interlayer insulating film and a second upper interlayer insulating film, a first contact between the first gate structure and the second gate structure and within the first interlayer insulating film, and a second contact formed between the third gate structure and the fourth gate structure and within the second interlayer insulating film.

公开(公告)号：US20230269125A1

公开(公告)日：2023-08-24

申请号：US18168320

申请日：2023-02-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dong Han KIM ,  Sung Soo Kim ,  Wan Kim

IPC: H04L27/38 ,  H03K5/01

CPC classification number: H04L27/3863 ,  H03K5/01 ,  H03K2005/00286

Abstract: An electronic device includes a feedback oscillator configured to output a first oscillation signal and a second oscillation signal, the second oscillation signal having a defined phase difference from the first oscillation signal, the feedback oscillator including a phase shifter configured to receive the first oscillation signal and output the second oscillation signal, an up-conversion mixer configured to output a first loopback signal obtained by mixing the first oscillation signal with a reference tone signal, and output a second loopback signal obtained by mixing the second oscillation signal with the reference tone signal, and a receiver configured to generate a first reference IQ signal from the first loopback signal, generate a second reference IQ signal from the second loopback signal, and compare an actual phase difference between the first reference IQ signal and the second reference IQ signal with the defined phase difference.