公开(公告)号：US20100187552A1

公开(公告)日：2010-07-29

申请号：US12664040

申请日：2008-08-21

申请人： Jeong Ik Lee ,  Hye Yong Chu ,  Sung Mook Chung ,  Lee Mi Do ,  Sang Hee Park ,  Chi Sun Hwang

发明人： Jeong Ik Lee ,  Hye Yong Chu ,  Sung Mook Chung ,  Lee Mi Do ,  Sang Hee Park ,  Chi Sun Hwang

IPC分类号： H01L51/52 ,  H01L51/56

CPC分类号： H05B33/10

摘要： Provided are a hybrid white organic light emitting diode (OLED) and a method of fabricating the same. A HOMO level difference between a fluorescent emission layer and an electron transport layer in an organic emission layer (OLED) becomes higher than that between the other layers or a LUMO level difference between a fluorescent emission layer and a hole transport layer is higher than that between the other layers, so that a recombination region is restricted to a part of an emission layer to obtain high-efficiency fluorescent light emission. In addition, triplet excitons that are not used in a fluorescent emission layer are transferred to an auxiliary emission layer formed to be spaced apart from a recombination region by a predetermined distance to emit light in a different color from the fluorescent emission layer, so that both singlet and triplet excitons formed in the OLED are used to obtain high-efficiency white light emission.

摘要翻译： 提供了一种混合白色有机发光二极管（OLED）及其制造方法。 有机发射层（OLED）中的荧光发射层和电子传输层之间的HOMO电平差异变得高于其它层之间的HOMO电平差，或者荧光发射层和空穴传输层之间的LUMO电平差高于 其他层，使得复合区域被限制在发射层的一部分以获得高效荧光发光。 此外，不用于荧光发射层的三线态激子被转移到形成为与复合区隔开预定距离的辅助发射层，以发射与荧光发射层不同的颜色的光，从而两者 使用在OLED中形成的单线态和三线态激子来获得高效白光发射。

公开(公告)号：US20080136321A1

公开(公告)日：2008-06-12

申请号：US11951149

申请日：2007-12-05

申请人： Lee Mi DO ,  Kyu Ha Baek ,  Jeong Ik Lee ,  Yong Suk Yang ,  Sung Mook Chung ,  Hye Yong Chu ,  Sang Hee Park ,  Chi Sun Hwang

发明人： Lee Mi DO ,  Kyu Ha Baek ,  Jeong Ik Lee ,  Yong Suk Yang ,  Sung Mook Chung ,  Hye Yong Chu ,  Sang Hee Park ,  Chi Sun Hwang

IPC分类号： H01L27/28

CPC分类号： H01L51/5088 ,  H01L51/0059 ,  H01L51/0085 ,  H01L51/5048 ,  H01L51/5092

摘要： An organic light emitting diode (OLED) device is provided. The OLED device includes: a substrate; an anode formed on the substrate; a first organic thin layer formed on the anode; an organic emission layer formed on the first organic thin layer; a second organic thin layer formed on the organic emission layer; and a cathode formed on the second organic thin layer, wherein the first and second organic thin layers are formed in a single layer or a multi-layer, and at least a part of the first or second organic thin layer is doped with or formed of an insulator. The OLED device provides excellent durability, long life-time, and increased luminous efficiency by balanced charge injection caused by doping or stacking the insulator into or on the organic thin layer.

摘要翻译： 提供了一种有机发光二极管（OLED）装置。 OLED器件包括：衬底; 形成在基板上的阳极; 在阳极上形成的第一有机薄层; 形成在所述第一有机薄层上的有机发光层; 形成在有机发光层上的第二有机薄层; 和形成在所述第二有机薄层上的阴极，其中所述第一和第二有机薄层形成在单层或多层中，并且所述第一或第二有机薄层的至少一部分被掺杂或由 绝缘体。 OLED器件通过将绝缘体掺杂或堆叠在有机薄层上或其上而引起的平衡电荷注入，提供优异的耐久性，长的寿命和增加的发光效率。

公开(公告)号：US08409935B2

公开(公告)日：2013-04-02

申请号：US13590768

申请日：2012-08-21

申请人： Min Ki Ryu ,  Chi Sun Hwang ,  Chun Won Byun ,  Hye Yong Chu ,  Kyoung Ik Cho

发明人： Min Ki Ryu ,  Chi Sun Hwang ,  Chun Won Byun ,  Hye Yong Chu ,  Kyoung Ik Cho

IPC分类号： H01L21/00

CPC分类号： H01L29/66742 ,  H01L29/45 ,  H01L29/4908 ,  H01L29/786 ,  H01L29/7869

摘要： A method of manufacturing a transparent transistor including a substrate, source and drain electrodes formed on the substrate, each having a multi-layered structure of a lower transparent layer, a metal layer and an upper transparent layer, a channel formed between the source and drain electrodes, and a gate electrode aligned with the channel. The lower transparent layer or the upper transparent layer is formed of a transparent semiconductor layer, which is the same as the channel.

摘要翻译： 一种制造透明晶体管的方法，所述透明晶体管包括形成在所述基板上的基板，源极和漏极，每个具有下透明层，金属层和上透明层的多层结构，在所述源极和漏极之间形成的沟道 电极和与通道对准的栅电极。 下透明层或上透明层由与通道相同的透明半导体层形成。

公开(公告)号：US6071799A

公开(公告)日：2000-06-06

申请号：US105274

申请日：1998-06-26

申请人： Cheol Soo Park ,  Chi Sun Hwang ,  Chang Hun Han

发明人： Cheol Soo Park ,  Chi Sun Hwang ,  Chang Hun Han

IPC分类号： H01L21/28 ,  H01L21/60 ,  H01L21/768 ,  H01L21/8242 ,  H01L21/4763

CPC分类号： H01L21/76844 ,  H01L21/76802 ,  H01L21/76897 ,  H01L27/10894 ,  H01L27/10852

摘要： The present invention relates to a method of forming a contact of a semiconductor device, and more particularly, to a method of forming a contact of a semiconductor device that can improve the process yield of the device and reliability by simplifying the process of forming the contact hole of the top conductive layer without removing the etching barrier layer of the portion on which the contact hole of the top conductive layer is to be formed when a storage electrode contact is formed, where the contact hole of the top conductive layer is formed on the top of the bottom conductive layer, which refers to a process of forming the self-alignment contact.

摘要翻译： 本发明涉及一种形成半导体器件的接触的方法，更具体地说，涉及一种通过简化形成接触的工艺来形成半导体器件的接触的方法，该方法可以提高器件的工艺成品率和可靠性 在形成存储电极接触时不去除要形成顶部导电层的接触孔的部分的蚀刻阻挡层的顶部导电层的孔，其中顶部导电层的接触孔形成在 底部导电层的顶部，其指形成自对准接触的过程。

公开(公告)号：US08095343B2

公开(公告)日：2012-01-10

申请号：US12201457

申请日：2008-08-29

申请人： Jae Heon Shin ,  Chi Sun Hwang ,  Min Ki Ryu ,  Woo Seok Cheong ,  Hye Yong Chu

发明人： Jae Heon Shin ,  Chi Sun Hwang ,  Min Ki Ryu ,  Woo Seok Cheong ,  Hye Yong Chu

IPC分类号： G06F17/11

CPC分类号： G06F17/5036

摘要： Provided are a method and apparatus for modeling source-drain current of a TFT. The method includes receiving sample data, the sample data including a sample input value and a sample output value; adjusting modeling variables according to the sample data; calculating a current model value according to the adjusted modeling variables; when a difference between the calculated current model value and the sample output value is smaller than a predetermined threshold value, fitting a current model by applying the adjusted modeling variables to the current model; applying actual input data to the fitted current model; and outputting a result value corresponding to the actual input data, wherein the current model is a model for predicting the source-drain current of the TFT.

摘要翻译： 提供了一种用于建模TFT的源极 - 漏极电流的方法和装置。 该方法包括接收样本数据，样本数据包括样本输入值和样本输出值; 根据样本数据调整建模变量; 根据调整后的建模变量计算当前模型值; 当所计算的当前模型值与样本输出值之间的差小于预定阈值时，通过将调整的建模变量应用于当前模型来拟合当前模型; 将实际输入数据应用于拟合的当前模型; 并输出与实际输入数据对应的结果值，其中当前模型是用于预测TFT的源极 - 漏极电流的模型。

公开(公告)号：US20050248256A1

公开(公告)日：2005-11-10

申请号：US11120679

申请日：2005-05-03

申请人： Yoon Ho Song ,  Jin Ho Lee ,  Chi Sun Hwang

发明人： Yoon Ho Song ,  Jin Ho Lee ,  Chi Sun Hwang

IPC分类号： H01J29/04 ,  H01J1/30 ,  H01J1/304 ,  H01J29/06 ,  H01J31/12 ,  H01J1/62 ,  H01J1/02

CPC分类号： H01J29/06 ,  H01J31/127

摘要： Provided is a field emission display, which includes: a cathode portion including row signal lines and column signal lines in a stripe form allowing matrix addressing to be carried out on a substrate, and pixels defined by the row signal lines and the column signal lines, each pixel having a field emitter and a control device which controls the field emitter with two terminals connected to at least the row signal line and the column signal line and one terminal connected to the field emitter; an anode portion having an anode electrode, and a phosphor connected to the anode electrode; and a gate portion having a metal mesh with a plurality of penetrating holes, and a dielectric layer formed on at least one region of the metal mesh, wherein the gate portion is disposed between the cathode portion and the anode portion to allow the surface where the dielectric layer is formed to be faced to the cathode portion and to allow electrons emitted from the field emitter to collide with the phosphor via the penetrating holes.

摘要翻译： 本发明提供一种场发射显示器，其包括：阴极部分，包括行信号线和条形形式的列信号线，允许在衬底上执行矩阵寻址，以及由行信号线和列信号线限定的像素， 每个像素具有场发射器和控制器件，其控制场致发射器，其中两个端子至少连接到行信号线和列信号线，一个端子连接到场发射器; 具有阳极电极的阳极部分和与阳极电极连接的荧光体; 以及栅极部分，具有具有多个穿透孔的金属网，以及形成在所述金属网的至少一个区域上的电介质层，其中所述栅极部分设置在所述阴极部分和所述阳极部分之间， 电介质层形成为面向阴极部分并且允许从场发射器发射的电子经由穿透孔与磷光体碰撞。

公开(公告)号：US08269220B2

公开(公告)日：2012-09-18

申请号：US12554066

申请日：2009-09-04

申请人： Min Ki Ryu ,  Chi Sun Hwang ,  Chun Won Byun ,  Hye Yong Chu ,  Kyoung Ik Cho

发明人： Min Ki Ryu ,  Chi Sun Hwang ,  Chun Won Byun ,  Hye Yong Chu ,  Kyoung Ik Cho

IPC分类号： H01L29/04

CPC分类号： H01L29/66742 ,  H01L29/45 ,  H01L29/4908 ,  H01L29/786 ,  H01L29/7869

摘要： Provided is a transparent transistor including a substrate, source and drain electrodes formed on the substrate, each having a multi-layered structure of a lower transparent layer, a metal layer and an upper transparent layer, a channel formed between the source and drain electrodes, and a gate electrode aligned with the channel. Here, the lower transparent layer or the upper transparent layer is formed of a transparent semiconductor layer, which is the same as the channel. Thus, the use of the multi-layered transparent conductive layer can ensure transparency and conductivity, overcome a problem of contact resistance between the source and drain electrodes and a semiconductor, and improve processibility by patterning the multi-layered transparent conductive layer all at once, while deposition is performed layer by layer.

摘要翻译： 提供了一种透明晶体管，其包括形成在基板上的基板，源电极和漏电极，每个具有下透明层，金属层和上透明层的多层结构，在源极和漏极之间形成的沟道， 以及与沟道对准的栅电极。 这里，下透明层或上透明层由与通道相同的透明半导体层形成。 因此，使用多层透明导电层可以确保透明性和导电性，克服了源极和漏极之间的接触电阻和半导体的问题，并且通过一次构图多层透明导电层来提高加工性， 同时逐层进行沉积。

公开(公告)号：US20100155792A1

公开(公告)日：2010-06-24

申请号：US12554066

申请日：2009-09-04

申请人： Min Ki Ryu ,  Chi Sun Hwang ,  Chun Won Byun ,  Hye Yong Chu ,  Kyong Ik Cho

发明人： Min Ki Ryu ,  Chi Sun Hwang ,  Chun Won Byun ,  Hye Yong Chu ,  Kyong Ik Cho

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L29/66742 ,  H01L29/45 ,  H01L29/4908 ,  H01L29/786 ,  H01L29/7869

摘要： Provided is a transparent transistor including a substrate, source and drain electrodes formed on the substrate, each having a multi-layered structure of a lower transparent layer, a metal layer and an upper transparent layer, a channel formed between the source and drain electrodes, and a gate electrode aligned with the channel. Here, the lower transparent layer or the upper transparent layer is formed of a transparent semiconductor layer, which is the same as the channel. Thus, the use of the multi-layered transparent conductive layer can ensure transparency and conductivity, overcome a problem of contact resistance between the source and drain electrodes and a semiconductor, and improve processibility by patterning the multi-layered transparent conductive layer all at once, while deposition is performed layer by layer.

摘要翻译： 提供了一种透明晶体管，其包括形成在基板上的基板，源电极和漏电极，每个具有下透明层，金属层和上透明层的多层结构，在源极和漏极之间形成的沟道， 以及与沟道对准的栅电极。 这里，下透明层或上透明层由与通道相同的透明半导体层形成。 因此，使用多层透明导电层可以确保透明性和导电性，克服了源极和漏极之间的接触电阻和半导体的问题，并且通过一次构图多层透明导电层来提高加工性， 同时逐层进行沉积。

公开(公告)号：US20100019239A1

公开(公告)日：2010-01-28

申请号：US12359149

申请日：2009-01-23

申请人： Woo Seok Cheong ,  Sung Min Yoon ,  Jae Heon Shin ,  Chi Sun Hwang

发明人： Woo Seok Cheong ,  Sung Min Yoon ,  Jae Heon Shin ,  Chi Sun Hwang

IPC分类号： H01L29/786 ,  H01L21/20

CPC分类号： H01L29/7869 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02592 ,  H01L21/02631

摘要： Provided are a method of fabricating a zinc-tin-oxide (ZTO) thin film, a thin film transistor employing the same, and a method of fabricating a thin film transistor. The method of fabricating a ZTO thin film includes depositing zinc oxide and tin oxide at a deposition temperature of 450° C. or lower so that a zinc-to-tin atomic ratio is 4:1 or greater, to form an amorphous ZTO thin film. In the thin film transistor, the ZTO thin film is used as a channel layer.

摘要翻译： 提供了制造锌 - 锡氧化物（ZTO）薄膜的方法，采用该方法的薄膜晶体管以及制造薄膜晶体管的方法。 制造ZTO薄膜的方法包括在450℃或更低的沉积温度下沉积氧化锌和氧化锡，使得锌 - 锡原子比为4:1或更大，以形成无定形ZTO薄膜 。 在薄膜晶体管中，ZTO薄膜用作沟道层。

公开(公告)号：US20090157372A1

公开(公告)日：2009-06-18

申请号：US12201457

申请日：2008-08-29

申请人： Jae Heon SHIN ,  Chi Sun Hwang ,  Min Ki Ryu ,  Woo Seok Cheong ,  Hye Yong Chu

发明人： Jae Heon SHIN ,  Chi Sun Hwang ,  Min Ki Ryu ,  Woo Seok Cheong ,  Hye Yong Chu

IPC分类号： G06G7/62

CPC分类号： G06F17/5036

摘要： Provided are a method and apparatus for modeling source-drain current of a TFT. The method includes receiving sample data, the sample data including a sample input value and a sample output value; adjusting modeling variables according to the sample data; calculating a current model value according to the adjusted modeling variables; when a difference between the calculated current model value and the sample output value is smaller than a predetermined threshold value, fitting a current model by applying the adjusted modeling variables to the current model; applying actual input data to the fitted current model; and outputting a result value corresponding to the actual input data, wherein the current model is a model for predicting the source-drain current of the TFT.

摘要翻译： 提供了一种用于建模TFT的源极 - 漏极电流的方法和装置。 该方法包括接收样本数据，样本数据包括样本输入值和样本输出值; 根据样本数据调整建模变量; 根据调整后的建模变量计算当前模型值; 当所计算的当前模型值与样本输出值之间的差小于预定阈值时，通过将调整的建模变量应用于当前模型来拟合当前模型; 将实际输入数据应用于拟合的当前模型; 并输出与实际输入数据对应的结果值，其中当前模型是用于预测TFT的源极 - 漏极电流的模型。