公开(公告)号：US06537865B2

公开(公告)日：2003-03-25

申请号：US09930136

申请日：2001-08-16

申请人： Kazuyuki Inokuchi ,  Seiichi Takahashi ,  Shinichi Hoshi ,  Tadashi Saito ,  Nobusuke Yamamoto ,  Yuko Itoh ,  Nobumasa Higemoto

发明人： Kazuyuki Inokuchi ,  Seiichi Takahashi ,  Shinichi Hoshi ,  Tadashi Saito ,  Nobusuke Yamamoto ,  Yuko Itoh ,  Nobumasa Higemoto

IPC分类号： H01L21338

CPC分类号： H01L29/66462 ,  H01L29/42316 ,  H01L29/7785

摘要： A semiconductor device fabrication process includes forming a Schottky layer, a cap layer covering the surface of the Schottky layer, and a Schottky electrode of a two-level structure having a lower portion that penetrates through the cap layer and reaches the Schottky layer, and having an upper portion larger than the lower portion in cross-sectional area and that overlies the cap layer. With this construction, surface defects are unlikely to occur, so that a highly reliable semiconductor device can be fabricated.

摘要翻译： 半导体器件制造工艺包括形成肖特基层，覆盖肖特基层表面的覆盖层和具有穿透盖层并到达肖特基层的下部的二级结构的肖特基电极，并且具有 在上部比横截面积的下部大的部分，覆盖在盖层上。 利用这种结构，不可能发生表面缺陷，从而可以制造高可靠性的半导体器件。

公开(公告)号：US06207499B1

公开(公告)日：2001-03-27

申请号：US09321200

申请日：1999-05-27

申请人： Shinichi Hoshi

发明人： Shinichi Hoshi

IPC分类号： H01L218242

CPC分类号： C23C14/225 ,  C23C14/046 ,  H01L21/0272 ,  H01L21/0273 ,  H01L28/40

摘要： A method of fabricating a semiconductor device comprises the steps of: (a) forming a mask layer over an upper surface of a semiconductor substrate such that the mask layer has an aperture penetrating the mask layer and having an inclined lateral wall so as to make the aperture inverted taper shaped; (b) forming a first dielectric layer at a first area over the upper surface of the semiconductor substrate within the aperture by sputtering at a first sputtering incidence direction; and (c) forming a first electrode layer at a second area over the upper surface of the semiconductor substrate within the aperture by sputtering at a second sputtering incidence direction which is different from the first sputtering incidence direction.

摘要翻译： 一种制造半导体器件的方法包括以下步骤：（a）在半导体衬底的上表面上形成掩模层，使得掩模层具有穿透掩模层并具有倾斜侧壁的孔，以使 孔径倒锥形; （b）在第一溅射入射方向上通过溅射在所述孔内的所述半导体衬底的上表面上的第一区域处形成第一介电层; 以及（c）通过在与第一溅射入射方向不同的第二溅射入射方向上溅射，在孔内的半导体衬底的上表面上的第二区域形成第一电极层。

公开(公告)号：US07763910B2

公开(公告)日：2010-07-27

申请号：US12382664

申请日：2009-03-20

申请人： Toshiharu Marui ,  Fumihiko Toda ,  Shinichi Hoshi

发明人： Toshiharu Marui ,  Fumihiko Toda ,  Shinichi Hoshi

IPC分类号： H01L29/778

CPC分类号： H01L29/7786 ,  H01L29/402 ,  H01L29/42316 ,  H01L29/66462

摘要： A semiconductor device has source and drain electrodes formed on a substrate, a gate insulation film formed on the substrate between the source and drain electrodes, and a gate electrode formed on the gate insulation film. These elements are all covered by a dielectric sub-insulation film. An opening is formed in the sub-insulation film, partially exposing the gate electrode. A field plate extends from the top of the gate electrode down one side of the gate electrode as far as the sub-insulation film covering the gate insulation film, filling the opening. The thickness of the sub-insulation film can be selected to optimize the separation between the field plate and the substrate for the purpose of reducing current collapse by reducing electric field concentration at the edge of the gate electrode.

摘要翻译： 半导体器件具有形成在基板上的源极和漏极，在源极和漏极之间的基板上形成的栅极绝缘膜，以及形成在栅极绝缘膜上的栅电极。 这些元件都被绝缘子绝缘膜覆盖。 在副绝缘膜中形成开口，部分地露出栅电极。 场板从栅电极的顶部向下延伸到栅电极的一侧，直到覆盖栅绝缘膜的次绝缘膜填充开口。 可以选择次级绝缘膜的厚度以优化场板和衬底之间的分离，以便通过降低栅电极边缘处的电场浓度来减少电流崩塌。

公开(公告)号：US07601993B2

公开(公告)日：2009-10-13

申请号：US11636430

申请日：2006-12-11

申请人： Shinichi Hoshi ,  Masanori Itoh

发明人： Shinichi Hoshi ,  Masanori Itoh

IPC分类号： H01L31/072

CPC分类号： H01L29/7787 ,  H01L21/28587 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/41766 ,  H01L29/66462

摘要： The present invention provides a semiconductor device having a recess-structured ohmic electrode, in which the resistance is small and variation in the resistance value caused by manufacturing irregularities is small. In the semiconductor device of the present invention, a two-dimensional electron gas layer is formed on the interface between a channel-forming layer and a Schottky layer by electrons supplied from the Schottky layer. The ohmic electrode comprises a plurality of side faces in ohmic contact with the two-dimensional electron gas layer. At least a part of side faces of the ohmic electrodes are non-parallel to a channel width direction. In a preferred embodiment of the present invention, the side faces have a saw tooth form or a comb tooth form. Since the contact area between the ohmic electrode and the two-dimensional electron gas layer is increased, ohmic resistance is reduced.

摘要翻译： 本发明提供一种具有凹陷结构的欧姆电极的半导体器件，其中电阻小，并且由制造不规则性引起的电阻值的变化小。 在本发明的半导体器件中，通过从肖特基层提供的电子，在沟道形成层和肖特基层之间的界面上形成二维电子气层。 欧姆电极包括与二维电子气体层欧姆接触的多个侧面。 欧姆电极的至少一部分侧面不平行于沟道宽度方向。 在本发明的优选实施例中，侧面具有锯齿形或梳齿形。 由于欧姆电极和二维电子气体层之间的接触面积增加，所以欧姆电阻降低。

公开(公告)号：US20080118704A1

公开(公告)日：2008-05-22

申请号：US11924220

申请日：2007-10-25

申请人： Shigeto OKUJI ,  Masahiko Sekiya ,  Shinichi Hoshi

发明人： Shigeto OKUJI ,  Masahiko Sekiya ,  Shinichi Hoshi

IPC分类号： B32B3/10 ,  B26F1/00

CPC分类号： H01L51/52 ,  Y10T428/24273

摘要： This invention relates to a luminescent sheet having see-through property, through which see-through holes are formed and which comprises a means of causing luminescence; a method of producing the luminescent sheet, comprising carrying out perforation processing on a sheet body comprising a means of causing luminescence so as to impart see-through property to such sheet body; and a method of producing the luminescent sheet, comprising carrying out perforation processing on a sheet body so as to impart see-through property to such sheet body and then applying a means of causing luminescence to the sheet body.According to this invention, a luminescent decorative material having see-through property, which is visible even at night and of which different decorative properties are visible in the daytime or under lighting due to the presence or absence of luminescence, is provided.

摘要翻译： 本发明涉及具有透明性的发光片，通过该发光片形成透孔并且包括引起发光的装置; 一种制造发光片的方法，包括对片体进行穿孔处理，该片体包括使发光的手段，以便赋予该片体透明性; 以及发光片的制造方法，其特征在于，对片体进行穿孔处理，以对该片体赋予透视性，然后对片体施加发光的手段。 根据本发明，提供具有透明性的发光装饰材料，其即使在夜间也是可见的，并且由于存在或不存在发光而在白天或在照明下可见不同的装饰性质。

公开(公告)号：US20080023727A1

公开(公告)日：2008-01-31

申请号：US11878374

申请日：2007-07-24

申请人： Shinichi Hoshi ,  Masanori Itoh

发明人： Shinichi Hoshi ,  Masanori Itoh

IPC分类号： H01L31/072

CPC分类号： H01L29/7787 ,  H01L29/2003 ,  H01L29/402 ,  H01L29/42316

摘要： Deterioration of the high frequency characteristics of a field effect transistor is prevented, and the on- and off-gate leakage currents are reduced. A field effect transistor comprises the fourth electrode 126 between the gate electrode 122 and the drain electrode 118. The fourth electrode is formed to satisfy the relationship of 0.25=(FP2−D)/Lgd=0.5, where Lgd represents a distance between the gate and drain electrodes and FP2−D does the distance between the drain and fourth electrodes.

摘要翻译： 防止了场效应晶体管的高频特性的劣化，并且降低了栅极和栅极之间的漏电流。 场效应晶体管包括在栅电极122和漏电极118之间的第四电极126.第四电极形成为满足0.25 =（FP2-D）/Lgd=0.5的关系，其中Lgd表示栅极 并且漏电极和FP2-D确定漏极和第四电极之间的距离。

公开(公告)号：US20050161704A1

公开(公告)日：2005-07-28

申请号：US11040016

申请日：2005-01-24

申请人： Shinichi Hoshi ,  Tomoyuki Ohshima ,  Hironobu Moriguchi

发明人： Shinichi Hoshi ,  Tomoyuki Ohshima ,  Hironobu Moriguchi

IPC分类号： H01L21/265 ,  H01L21/335 ,  H01L21/338 ,  H01L29/778 ,  H01L29/812 ,  H01L29/732 ,  H01L31/0328 ,  H01L31/072

CPC分类号： H01L29/66462 ,  H01L29/7783 ,  H01L29/8126

摘要： The semiconductor device (10) comprises a semiinsulating substrate (12), a layered structure (20) of compound semiconductor which is a mesa structure (18) and contains an active channel layer (14), a first and a second metal main electrodes (22a, 22b) which are provided on the layered structure (20), a first and a second ion implantation regions (40a, 40b) which are provided at the depth level below the active channel layer, and a metal control electrode (26) which is provided along the channel width direction from the first ion implantation region to the second ion implantation region, crossing over the upper side of the active channel layer.

摘要翻译： 半导体器件（10）包括半绝缘衬底（12），作为台面结构（18）并且包含有源沟道层（14）的化合物半导体的层状结构（20），第一和第二金属主电极 设置在分层结构（20）上的第一和第二离子注入区域（40a，30b），其设置在有源沟道层下方的深度级，以及金属控制电极 （26），其沿着沟道宽度方向从第一离子注入区设置到第二离子注入区，与有源沟道层的上侧交叉。

公开(公告)号：US5903023A

公开(公告)日：1999-05-11

申请号：US800219

申请日：1997-02-12

申请人： Shinichi Hoshi

发明人： Shinichi Hoshi

IPC分类号： C23C14/04 ,  C23C14/22 ,  H01L21/02 ,  H01L21/027 ,  H01L21/203 ,  H01L21/822 ,  H01L27/04 ,  H01L27/108 ,  H01L29/76

CPC分类号： C23C14/225 ,  C23C14/046 ,  H01L21/0272 ,  H01L21/0273 ,  H01L28/40

摘要： A method of fabricating a semiconductor device comprises the steps of: (a) forming a mask layer over an upper surface of a semiconductor substrate such that the mask layer has an aperture penetrating the mask layer and having an inclined lateral wall so as to make the aperture inverted taper shaped; (b) forming a first dielectric layer at a first area over the upper surface of the semiconductor substrate within the aperture by sputtering at a first sputtering incidence direction; and (c) forming a first electrode layer at a second area over the upper surface of the semiconductor substrate within the aperture by sputtering at a second sputtering incidence direction which is different from the first sputtering incidence direction.

摘要翻译： 一种制造半导体器件的方法包括以下步骤：（a）在半导体衬底的上表面上形成掩模层，使得掩模层具有穿透掩模层并具有倾斜侧壁的孔，以使 孔径倒锥形; （b）在第一溅射入射方向上通过溅射在所述孔内的所述半导体衬底的上表面上的第一区域处形成第一介电层; 以及（c）通过在与第一溅射入射方向不同的第二溅射入射方向上溅射，在孔内的半导体衬底的上表面上的第二区域形成第一电极层。

公开(公告)号：US08758883B2

公开(公告)日：2014-06-24

申请号：US11868235

申请日：2007-10-05

申请人： Shigeto Okuji ,  Masahiko Sekiya ,  Shinichi Hoshi

发明人： Shigeto Okuji ,  Masahiko Sekiya ,  Shinichi Hoshi

IPC分类号： B32B3/26 ,  B32B37/16 ,  B29C65/00 ,  H01J1/70 ,  H01J1/72

CPC分类号： H05B33/14 ,  C09K11/584 ,  G09F13/22 ,  G09F19/22 ,  H05B33/28

摘要： The claimed invention relates to a luminescent decorative material, which is visible even at night, of which different decorative properties are obtained in the daytime or under lighting due to the presence or absence of luminescence. The claimed invention provide a luminescent sheet (plane sheet) having see-through property and containing a transparent part, through which it is possible to see the area behind the plane sheet, and a luminescent part.

摘要翻译： 所要求保护的发明涉及即使在晚上也可见的发光装饰材料，其由于存在或不存在发光而在白天或在照明下获得不同的装饰性质。 要求保护的发明提供具有透明性的发光片（平面片），并且包含透明部分，通过该透明部分可以看到平面片后面的区域和发光部分。

公开(公告)号：US20120101221A1

公开(公告)日：2012-04-26

申请号：US13321687

申请日：2010-05-21

申请人： Shinichi Hoshi ,  Masaharu Ito ,  Kazue Uemura ,  Yuta Suzuki

发明人： Shinichi Hoshi ,  Masaharu Ito ,  Kazue Uemura ,  Yuta Suzuki

IPC分类号： C08L83/00

CPC分类号： C23C14/48 ,  B32B27/06 ,  B32B2307/7244 ,  C08J7/047 ,  C08J7/123 ,  C08J2383/05 ,  G02F1/133305 ,  G02F2201/501 ,  G02F2201/503 ,  H01L31/049 ,  Y02E10/50

摘要： A formed article comprising a gas barrier layer that is formed of a material including at least an oxygen atom, a carbon atom, and a silicon atom, the gas barrier layer including an area (A) where an oxygen atom content rate gradually decreases, and a carbon atom content rate gradually increases in a depth direction from a surface, the area (A) including a partial area (A1) and a partial area (A2), the (A1) having a specific oxygen, carbon and silicon content, and the (A2) having a specific oxygen, carbon and silicon content; a method of producing the same; an electronic device member; an electronic device. The formed article exhibits an excellent gas barrier capability, excellent bendability, excellent adhesion, and excellent surface flatness.

摘要翻译： 包含由至少包含氧原子，碳原子和硅原子的材料形成的气体阻隔层的成形体，所述阻气层包括氧原子含有率逐渐降低的区域（A），以及 碳原子含量率从表面的深度方向逐渐增加，包括部分区域（A1）和部分区域（A2）的区域（A），（A1）具有特定的氧，碳和硅含量，以及 （A2）具有特定的氧，碳和硅含量; 其制造方法; 电子设备构件; 电子设备。 该成型体具有优异的阻气性，优异的弯曲性，优异的粘附性和优异的表面平坦度。