公开(公告)号：US07504309B2

公开(公告)日：2009-03-17

申请号：US11548842

申请日：2006-10-12

申请人： Thomas W. Dyer ,  Sunfei Fang ,  Jiang Yan ,  Jun Jung Kim ,  Yaocheng Liu ,  Huilong Zhu

发明人： Thomas W. Dyer ,  Sunfei Fang ,  Jiang Yan ,  Jun Jung Kim ,  Yaocheng Liu ,  Huilong Zhu

IPC分类号： H01L21/336

CPC分类号： H01L29/665 ,  H01L21/32 ,  H01L29/6653 ,  H01L29/66545 ,  H01L29/6659

摘要： A method forms a gate conductor over a substrate, and simultaneously forms spacers on sides of the gate conductor and a gate cap on the top of the gate conductor. Isolation regions are formed in the substrate and the method implants an impurity into exposed regions of the substrate not protected by the gate conductor and the spacers to form source and drain regions. The method deposits a mask over the gate conductor, the spacers, and the source and drain regions. The mask is recessed to a level below a top of the gate conductor but above the source and drain regions, such that the spacers are exposed and the source and drain regions are protected by the mask. With the mask in place, the method then safely removes the spacers and the gate cap, without damaging the source/drain regions or the isolation regions (which are protected by the mask). Next, the method removes the mask and then forms silicide regions on the gate conductor and the source and drain regions.

摘要翻译： 一种方法在衬底上形成栅极导体，同时在栅极导体的侧面和栅极导体的顶部上形成栅极盖。 在衬底中形成隔离区域，并且该方法将杂质注入未被栅极导体和间隔物保护的衬底的暴露区域中以形成源区和漏区。 该方法在栅极导体，间隔物以及源极和漏极区域上沉积掩模。 掩模凹陷到栅极导体的顶部下方但在源极和漏极区域之上的水平面，使得间隔物被暴露，并且源极和漏极区域被掩模保护。 在掩模就位的情况下，该方法然后安全地去除间隔物和栅极盖，而不损坏源极/漏极区域或隔离区域（被掩模保护）。 接下来，该方法移除掩模，然后在栅极导体和源极和漏极区域上形成硅化物区域。

公开(公告)号：US20060124974A1

公开(公告)日：2006-06-15

申请号：US10905101

申请日：2004-12-15

申请人： Cyril Cabral ,  Bruce Doris ,  Thomas Kanarsky ,  Xiao Liu ,  Huilong Zhu

发明人： Cyril Cabral ,  Bruce Doris ,  Thomas Kanarsky ,  Xiao Liu ,  Huilong Zhu

IPC分类号： H01L29/80

CPC分类号： H01L29/7845 ,  H01L21/3215 ,  H01L21/823807 ,  H01L21/823835 ,  H01L21/823842 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/665

摘要： A semiconductor structure and method that is capable of generating a local mechanical gate stress for channel mobility modification are provided. The semiconductor structure includes at least one NFET and at least one PFET on a surface of a semiconductor substrate. The at least one NFET has a gate stack structure comprising a gate dielectric, a first gate electrode layer, a barrier layer, a Si-containing second gate electrode layer and a compressive metal, and the at least one PFET has a gate stack structure comprising a gate dielectric, a first gate electrode layer, a barrier layer and a tensile metal or a silicide.

摘要翻译： 提供了能够产生用于信道迁移率修改的局部机械栅极应力的半导体结构和方法。 半导体结构在半导体衬底的表面上包括至少一个NFET和至少一个PFET。 所述至少一个NFET具有包括栅极电介质，第一栅极电极层，阻挡层，含Si的第二栅极电极层和压缩金属的栅极堆叠结构，并且所述至少一个PFET具有包括 栅极电介质，第一栅电极层，阻挡层和拉伸金属或硅化物。

公开(公告)号：US07314789B2

公开(公告)日：2008-01-01

申请号：US11618751

申请日：2006-12-30

申请人： Cyril Cabral, Jr. ,  Bruce B. Doris ,  Thomas S. Kanarsky ,  Xiao H. Liu ,  Huilong Zhu

发明人： Cyril Cabral, Jr. ,  Bruce B. Doris ,  Thomas S. Kanarsky ,  Xiao H. Liu ,  Huilong Zhu

IPC分类号： H01L21/336 ,  H01L21/8234 ,  H01L21/84 ,  H01L21/04

CPC分类号： H01L29/7845 ,  H01L21/3215 ,  H01L21/823807 ,  H01L21/823835 ,  H01L21/823842 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/665

摘要： A semiconductor structure and method that is capable of generating a local mechanical gate stress for channel mobility modification are provided. The semiconductor structure includes at least one NFET and at least one PFET on a surface of a semiconductor substrate. The at least one NFET has a gate stack structure comprising a gate dielectric, a first gate electrode layer, a barrier layer, a Si-containing second gate electrode layer and a compressive metal, and the at least one PFET has a gate stack structure comprising a gate dielectric, a first gate electrode layer, a barrier layer and a tensile metal or a silicide.

摘要翻译： 提供了能够产生用于信道迁移率修改的局部机械栅极应力的半导体结构和方法。 半导体结构在半导体衬底的表面上包括至少一个NFET和至少一个PFET。 所述至少一个NFET具有包括栅极电介质，第一栅极电极层，阻挡层，含Si的第二栅极电极层和压缩金属的栅极堆叠结构，并且所述至少一个PFET具有包括 栅极电介质，第一栅电极层，阻挡层和拉伸金属或硅化物。

公开(公告)号：US20060148215A1

公开(公告)日：2006-07-06

申请号：US10905454

申请日：2005-01-05

申请人： Huilong Zhu ,  Oleg Gluschenkov ,  Chun-Yung Sung

发明人： Huilong Zhu ,  Oleg Gluschenkov ,  Chun-Yung Sung

IPC分类号： H01L21/20 ,  H01L21/425

CPC分类号： H01L21/26506 ,  H01L29/51 ,  H01L29/66545 ,  H01L29/6659 ,  H01L29/7833

摘要： A method of forming a field effect transistor is provided which includes forming an amorphized semiconductor region having a first depth from a single-crystal semiconductor region and subsequently forming a first gate conductor above a channel portion of the amorphized semiconductor region. A first dopant including at least one of an n-type dopant and a p-type dopant is then implanted to a second depth into portions of the amorphized semiconductor region not masked by the first gate conductor to form source/drain portions adjacent to the channel portion. The substrate is then heated to recrystallize the channel portion and the source/drain portions of the amorphized semiconductor region. After the heating step, at least a part of the recrystallized semiconductor region is locally heated to activate a dopant in at least one of the channel portion and the source/drain portion.

摘要翻译： 提供一种形成场效应晶体管的方法，其包括从单晶半导体区域形成具有第一深度的非晶化半导体区域，随后在非晶化半导体区域的沟道部分的上方形成第一栅极导体。 然后将包括n型掺杂剂和p型掺杂剂中的至少一种的第一掺杂剂注入第二深度到不被第一栅极导体掩蔽的非晶化半导体区域的部分，以形成邻近沟道的源极/漏极部分 一部分。 然后将衬底加热以使非晶化半导体区域的沟道部分和源极/漏极部分重结晶。 在加热步骤之后，至少部分重结晶的半导体区域被局部加热以在沟道部分和源极/漏极部分中的至少一个中激活掺杂剂。

公开(公告)号：US07173312B2

公开(公告)日：2007-02-06

申请号：US10905101

申请日：2004-12-15

申请人： Cyril Cabral, Jr. ,  Bruce B. Doris ,  Thomas S. Kanarsky ,  Xiao H. Liu ,  Huilong Zhu

发明人： Cyril Cabral, Jr. ,  Bruce B. Doris ,  Thomas S. Kanarsky ,  Xiao H. Liu ,  Huilong Zhu

IPC分类号： H01L29/76

CPC分类号： H01L29/7845 ,  H01L21/3215 ,  H01L21/823807 ,  H01L21/823835 ,  H01L21/823842 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/665

摘要： A semiconductor structure and method that is capable of generating a local mechanical gate stress for channel mobility modification are provided. The semiconductor structure includes at least one NFET and at least one PFET on a surface of a semiconductor substrate. The at least one NFET has a gate stack structure comprising a gate dielectric, a first gate electrode layer, a barrier layer, a Si-containing second gate electrode layer and a compressive metal, and the at least one PFET has a gate stack structure comprising a gate dielectric, a first gate electrode layer, a barrier layer and a tensile metal or a silicide.

摘要翻译： 提供了能够产生用于信道迁移率修改的局部机械栅极应力的半导体结构和方法。 半导体结构在半导体衬底的表面上包括至少一个NFET和至少一个PFET。 所述至少一个NFET具有包括栅极电介质，第一栅极电极层，阻挡层，含Si的第二栅极电极层和压缩金属的栅极堆叠结构，并且所述至少一个PFET具有包括 栅极电介质，第一栅电极层，阻挡层和拉伸金属或硅化物。

公开(公告)号：US07247547B2

公开(公告)日：2007-07-24

申请号：US10905454

申请日：2005-01-05

申请人： Huilong Zhu ,  Oleg Gluschenkov ,  Chun-Yung Sung

发明人： Huilong Zhu ,  Oleg Gluschenkov ,  Chun-Yung Sung

IPC分类号： H01L21/20 ,  H01L21/36

CPC分类号： H01L21/26506 ,  H01L29/51 ,  H01L29/66545 ,  H01L29/6659 ,  H01L29/7833

摘要： A method of forming a field effect transistor is provided which includes forming an amorphized semiconductor region having a first depth from a single-crystal semiconductor region and subsequently forming a first gate conductor above a channel portion of the amorphized semiconductor region. A first dopant including at least one of an n-type dopant and a p-type dopant is then implanted to a second depth into portions of the amorphized semiconductor region not masked by the first gate conductor to form source/drain portions adjacent to the channel portion. The substrate is then heated to recrystallize the channel portion and the source/drain portions of the amorphized semiconductor region. After the heating step, at least a part of the recrystallized semiconductor region is locally heated to activate a dopant in at least one of the channel portion and the source/drain portion.

摘要翻译： 提供一种形成场效应晶体管的方法，其包括从单晶半导体区域形成具有第一深度的非晶化半导体区域，随后在非晶化半导体区域的沟道部分的上方形成第一栅极导体。 然后将包括n型掺杂剂和p型掺杂剂中的至少一种的第一掺杂剂注入第二深度到不被第一栅极导体掩蔽的非晶化半导体区域的部分，以形成与沟道相邻的源极/漏极部分 一部分。 然后将衬底加热以使非晶化半导体区域的沟道部分和源极/漏极部分重结晶。 在加热步骤之后，至少部分重结晶的半导体区域被局部加热以在沟道部分和源极/漏极部分中的至少一个中激活掺杂剂。

公开(公告)号：US09356025B2

公开(公告)日：2016-05-31

申请号：US14348579

申请日：2012-03-29

申请人： Huilong Zhu ,  Zhijiong Luo ,  Haizhou Yin

发明人： Huilong Zhu ,  Zhijiong Luo ,  Haizhou Yin

IPC分类号： H01L27/092 ,  H01L29/78 ,  H01L21/8238 ,  H01L21/762 ,  H01L29/66

CPC分类号： H01L27/092 ,  H01L21/76224 ,  H01L21/823807 ,  H01L21/823878 ,  H01L29/66575 ,  H01L29/7846

摘要： The present invention relates to enhancing MOSFET performance with the corner stresses of STI. A method of manufacturing a MOS device comprises the steps of: providing a semiconductor substrate; forming trenches on the semiconductor substrate and at least a pMOS region and at least an nMOS region surrounded by the trenches; filling the trenches with a dielectric material having a stress; removing at least the dielectric material having a stress in the trenches which is adjacent to a position where a channel is to be formed on each of the pMOS and nMOS regions so as to form exposed regions; filling the exposed regions with a insulating material; and forming pMOS and nMOS devices on the pMOS region and the nMOS region, respectively, wherein each of the pMOS and nMOS devices comprises a channel, a gate formed above the channel, and a source and a drain formed at both sides of the channel; wherein in a channel length direction, the boundary of each exposed region is substantially aligned with the boundary of the position of the channel, or the boundary of each exposed region extends along the channel length direction to be aligned with the boundary of corresponding pMOS or nMOS region.

摘要翻译： 本发明涉及利用STI的拐角应力来增强MOSFET的性能。 一种制造MOS器件的方法包括以下步骤：提供半导体衬底; 在所述半导体衬底和至少一个pMOS区域和由所述沟槽包围的至少nMOS区域中形成沟槽; 用具有应力的介电材料填充沟槽; 至少去除在沟道中具有应力的介电材料，所述沟槽邻近要在pMOS和nMOS区域中的每一个上形成沟道的位置，以形成暴露区域; 用绝缘材料填充暴露的区域; 以及分别在pMOS区域和nMOS区域上形成pMOS和nMOS器件，其中pMOS和nMOS器件中的每一个包括沟道，形成在沟道上方的栅极以及形成在沟道两侧的源极和漏极; 其中在通道长度方向上，每个曝光区域的边界基本上与通道位置的边界对齐，或者每个曝光​​区域的边界沿着沟道长度方向延伸以与对应的pMOS或nMOS的边界对准 地区。

公开(公告)号：US09054221B2

公开(公告)日：2015-06-09

申请号：US13510807

申请日：2011-11-18

申请人： Huilong Zhu ,  Qingqing Liang ,  Zhijiong Luo ,  Haizhou Yin

发明人： Huilong Zhu ,  Qingqing Liang ,  Zhijiong Luo ,  Haizhou Yin

IPC分类号： H01L27/088 ,  H01L21/336 ,  H01L21/84 ,  H01L27/12

CPC分类号： H01L21/84 ,  H01L27/1203

摘要： The present disclosure provides a semiconductor device and a method for manufacturing the same. The semiconductor device comprises: an SOI wafer comprising a semiconductor substrate, a buried insulation layer, and a semiconductor layer, wherein the buried insulation layer is disposed on the semiconductor substrate, and the semiconductor layer is disposed on the buried insulation layer; a plurality of MOSFETs being formed adjacently to each other in the SOI wafer, wherein each of the MOSFETs comprises a respective backgate being formed in the semiconductor substrate; and a plurality of shallow trench isolations, each of which being formed between respective adjacent MOSFETs to isolate the respective adjacent MOSFETs from each other, wherein the respective adjacent MOSFETs share a common backgate isolation region under and in direct contact with the respective backgate in the semiconductor substrate, and a PNP junction or an NPN junction is formed by the common backgate isolation region and the respective backgate of the respective adjacent MOSFETs. According to the present disclosure, respective backgates of two adjacent MOSFETs are isolated from each other by the shallow trench isolation. Furthermore, the two adjacent MOSFETs are also isolated from each other by the PNP or NPN junction formed by the respective backgates of the two adjacent MOSFETs and the common backgate isolation. As a result, this device structure has a better insulation effect over the prior art MOSFET and it greatly reduces the possibility of breakthrough.

摘要翻译： 本发明提供一种半导体器件及其制造方法。 半导体器件包括：SOI晶片，其包括半导体衬底，掩埋绝缘层和半导体层，其中所述掩埋绝缘层设置在所述半导体衬底上，并且所述半导体层设置在所述掩埋绝缘层上; 在SOI晶片中彼此相邻形成的多个MOSFET，其中每个MOSFET包括形成在半导体衬底中的相应后栅; 以及多个浅沟槽隔离，其中每一个均形成在各个相邻的MOSFET之间，以将各个相邻的MOSFET彼此隔离，其中相应的相邻MOSFET在半导体内部和相应的后栅极直接接触并与之直接接触。 衬底，并且PNP结或NPN结由公共背栅隔离区和相应的相邻MOSFET的相应背栅形成。 根据本公开，两个相邻MOSFET的相应背板通过浅沟槽隔离彼此隔离。 此外，两个相邻的MOSFET也通过由两个相邻MOSFET的相应后沿和公共背栅隔离形成的PNP或NPN结彼此隔离。 结果，该器件结构具有比现有技术的MOSFET更好的绝缘效果，并且大大降低了突破的可能性。

公开(公告)号：US08981454B2

公开(公告)日：2015-03-17

申请号：US13061461

申请日：2010-09-25

申请人： Huilong Zhu ,  Haizhou Yin ,  Zhijiong Luo

发明人： Huilong Zhu ,  Haizhou Yin ,  Zhijiong Luo

IPC分类号： H01L29/788 ,  H01L29/66 ,  H01L29/78

CPC分类号： H01L29/66825 ,  H01L21/28273 ,  H01L21/845 ,  H01L29/42324 ,  H01L29/785 ,  H01L29/7881

摘要： The present application discloses a non-volatile memory device, comprising a semiconductor fin on an insulating layer; a channel region at a central portion of the semiconductor fin; source/drain regions on both sides of the semiconductor fin; a floating gate arranged at a first side of the semiconductor fin and extending in a direction further away from the semiconductor fin; and a first control gate arranged on top of the floating gate or covering top and sidewall portions of the floating gate. The non-volatile memory device reduces a short channel effect, has an increased memory density, and is cost effective.

摘要翻译： 本申请公开了一种非易失性存储器件，其包括绝缘层上的半导体鳍片; 在半导体鳍片的中心部分处的沟道区域; 半导体鳍片两侧的源极/漏极区域; 布置在半导体鳍片的第一侧并沿远离半导体鳍片的方向延伸的浮动栅极; 以及布置在所述浮动栅极的顶部上或覆盖所述浮动栅极的顶部和侧壁部分的第一控制栅极。 非易失性存储器件减少短通道效应，具有增加的存储器密度，并且是成本有效的。

公开(公告)号：US08952453B2

公开(公告)日：2015-02-10

申请号：US13580053

申请日：2011-11-18

申请人： Huilong Zhu ,  Qingqing Liang ,  Haizhou Yin ,  Zhijiong Luo

发明人： Huilong Zhu ,  Qingqing Liang ,  Haizhou Yin ,  Zhijiong Luo

IPC分类号： H01L27/12 ,  H01L21/84 ,  H01L29/66 ,  H01L29/786

CPC分类号： H01L21/84 ,  H01L27/1203 ,  H01L29/66545 ,  H01L29/78648

摘要： The present application discloses a MOSFET and a method for manufacturing the same. The MOSFET is formed on an SOI wafer, comprising: a shallow trench isolation for defining an active region in the semiconductor layer; a gate stack on the semiconductor layer; a source region and a drain region in the semiconductor layer on both sides of the gate stack; a channel region in the semiconductor layer and sandwiched by the source region and the drain region; a back gate in the semiconductor substrate; a first dummy gate stack overlapping with a boundary between the semiconductor layer and the shallow trench isolation; and a second dummy gate stack on the shallow trench isolation, wherein the MOSFET further comprises a plurality of conductive vias which are disposed between the gate stack and the first dummy gate stack and electrically connected to the source region and the drain region respectively, and between the first dummy gate stack and the second dummy gate stack and electrically connected to the back gate. The MOSFET avoids short circuit between the back gate and the source/drain regions by the dummy gate stacks.

摘要翻译： 本申请公开了一种MOSFET及其制造方法。 MOSFET形成在SOI晶片上，包括：用于限定半导体层中的有源区的浅沟槽隔离; 半导体层上的栅极堆叠; 栅极堆叠的两侧的半导体层中的源极区域和漏极区域; 半导体层中的沟道区，被源极区和漏极区夹持; 半导体衬底中的背栅; 与半导体层和浅沟槽隔离之间的边界重叠的第一虚拟栅极堆叠; 以及在浅沟槽隔离上的第二虚拟栅极堆叠，其中所述MOSFET还包括多个导电通孔，所述多个导电通孔设置在所述栅极堆叠和所述第一伪栅极堆叠之间，并分别电连接到所述源极区域和所述漏极区域之间，以及 第一虚拟栅极堆叠和第二虚拟栅极堆叠并且电连接到背栅极。 MOSFET通过虚拟栅极堆叠避免了背栅极和源极/漏极区域之间的短路。