公开(公告)号：US07524410B2

公开(公告)日：2009-04-28

申请号：US10923441

申请日：2004-08-20

申请人： Whonchee Lee ,  Scott E. Moore ,  Brian A. Vaartstra

发明人： Whonchee Lee ,  Scott E. Moore ,  Brian A. Vaartstra

IPC分类号： C25F3/16 ,  C25F7/00 ,  C25D17/00

CPC分类号： B23H5/08 ,  B23H3/00 ,  B23H5/06 ,  B24B37/042 ,  C25F7/00

摘要： A method and apparatus for removing conductive material from a microelectronic substrate is disclosed. One method includes disposing an electrolytic liquid between a conductive material of a substrate and at least one electrode, with the electrolytic liquid having about 80% water or less. The substrate can be contacted with a polishing pad material, and the conductive material can be electrically coupled to a source of varying electrical signals via the electrolytic liquid and the electrode. The method can further include applying a varying electrical signal to the conductive material, moving at least one of the polishing pad material and the substrate relative to the other, and removing at least a portion of the conductive material while the electrolytic liquid is adjacent to the conductive material. By limiting/controlling the amount of water in the electrolytic liquid, an embodiment of the method can remove the conductive material with a reduced downforce.

摘要翻译： 公开了一种用于从微电子衬底去除导电材料的方法和装置。 一种方法包括在基板的导电材料和至少一个电极之间设置电解液，电解液具有约80％的水或更少的水。 衬底可以与抛光垫材料接触，并且导电材料可以经由电解液和电极电耦合到具有变化的电信号的源。 该方法可以进一步包括向导电材料施加变化的电信号，相对于另一个移动抛光垫材料和衬底中的至少一个，以及在电解液邻近该导电材料的同时移除至少一部分导电材料 导电材料。 通过限制/控制电解液中的水量，该方法的一个实施例可以以降低的下压力去除导电材料。

公开(公告)号：US07112122B2

公开(公告)日：2006-09-26

申请号：US10665219

申请日：2003-09-17

申请人： Whonchee Lee ,  Scott E. Moore ,  Brian A. Vaartstra

发明人： Whonchee Lee ,  Scott E. Moore ,  Brian A. Vaartstra

IPC分类号： B24B1/00

CPC分类号： B23H5/08 ,  B23H3/00 ,  B23H5/06 ,  B24B37/042 ,  C25F7/00

摘要： A method and apparatus for removing conductive material from a microelectronic substrate is disclosed. One method includes disposing an electrolytic liquid between a conductive material of a substrate and at least one electrode, with the electrolytic liquid having about 80% water or less. The substrate can be contacted with a polishing pad material, and the conductive material can be electrically coupled to a source of varying electrical signals via the electrolytic liquid and the electrode. The method can further include applying a varying electrical signal to the conductive material, moving at least one of the polishing pad material and the substrate relative to the other, and removing at least a portion of the conductive material while the electrolytic liquid is adjacent to the conductive material. By limiting/controlling the amount of water in the electrolytic liquid, an embodiment of the method can remove the conductive material with a reduced downforce.

公开(公告)号：US08974655B2

公开(公告)日：2015-03-10

申请号：US12054077

申请日：2008-03-24

申请人： Wayne Huang ,  Whonchee Lee

发明人： Wayne Huang ,  Whonchee Lee

IPC分类号： C25F3/16 ,  B23H5/08 ,  H01L21/321

CPC分类号： C25F3/16 ,  B23H5/08 ,  H01L21/32125

摘要： A method of removing a material from a surface includes providing a substrate comprising a material having a surface, contacting the surface with a polishing medium, applying a voltage to the substrate to remove material from the surface, and changing the voltage during the removing material from the surface. An electro-chemical mechanical polishing method includes providing a substrate having a surface, applying a platen to the surface, applying a first voltage to the substrate, rotating the platen and surface relative to each other at a first rotational speed, increasing to a second voltage, and decreasing to a second rotational speed.

摘要翻译： 从表面去除材料的方法包括提供包括具有表面的材料的基板，使表面与抛光介质接触，向基板施加电压以从表面去除材料，以及将去除材料期间的电压从 表面。 一种电化学机械抛光方法，包括提供具有表面的基板，向表面施加压板，向基板施加第一电压，以第一转速相对于彼此旋转压板和表面，增加到第二电压 ，并减小到第二转速。

公开(公告)号：US08450214B2

公开(公告)日：2013-05-28

申请号：US13599791

申请日：2012-08-30

申请人： Whonchee Lee ,  Janos Fucsko ,  David H. Wells

发明人： Whonchee Lee ,  Janos Fucsko ,  David H. Wells

IPC分类号： H01L21/311

CPC分类号： H01L21/30608 ,  B81B2203/033 ,  B81B2203/0338 ,  B81C1/00626 ,  C30B29/06 ,  C30B33/10

摘要： A single crystal silicon etching method includes providing a single crystal silicon substrate having at least one trench therein. The substrate is exposed to a buffered fluoride etch solution which undercuts the silicon to provide lateral shelves when patterned in the direction. The resulting structure includes an undercut feature when patterned in the direction.

摘要翻译： 单晶硅蚀刻方法包括提供其中具有至少一个沟槽的单晶硅衬底。 将衬底暴露于缓冲的氟化物蚀刻溶液，其在<100>方向图案化时，其将硅切割以提供横向搁板。 当沿<100>方向图案化时，所得结构包括底切特征。

公开(公告)号：US20070281493A1

公开(公告)日：2007-12-06

申请号：US11445544

申请日：2006-06-02

申请人： Janos Fucsko ,  David H. Wells ,  Patrick Flynn ,  Whonchee Lee

发明人： Janos Fucsko ,  David H. Wells ,  Patrick Flynn ,  Whonchee Lee

IPC分类号： H01L21/302

CPC分类号： H01L21/30608 ,  H01L21/302 ,  H01L21/31116 ,  H01L21/76232 ,  H01L29/66818

摘要： A single crystal silicon etching method includes providing single crystal silicon substrate having at least one trench therein. The substrate is exposed to an anisotropic etchant which undercuts the silicon. By controlling the length of the etch, single crystal silicon islands or smooth vertical walls in the single crystal silicon may be created.

摘要翻译： 单晶硅蚀刻方法包括提供在其中具有至少一个沟槽的单晶硅衬底。 将衬底暴露于削弱硅的各向异性蚀刻剂。 通过控制蚀刻的长度，可以产生单晶硅中的单晶硅岛或平滑的垂直壁。

公开(公告)号：US20070278183A1

公开(公告)日：2007-12-06

申请号：US11445718

申请日：2006-06-02

申请人： Whonchee Lee ,  Janos Fucsko ,  David H. Wells

发明人： Whonchee Lee ,  Janos Fucsko ,  David H. Wells

IPC分类号： B44C1/22 ,  C03C15/00

CPC分类号： H01L21/30608 ,  B81B2203/033 ,  B81B2203/0338 ,  B81C1/00626 ,  C30B29/06 ,  C30B33/10

摘要： A single crystal silicon etching method includes providing a single crystal silicon substrate having at least one trench therein. The substrate is exposed to a buffered fluoride etch solution which undercuts the silicon to provide lateral shelves when patterned in the direction. The resulting structure includes an undercut feature when patterned in the direction.

摘要翻译： 单晶硅蚀刻方法包括提供其中具有至少一个沟槽的单晶硅衬底。 将衬底暴露于缓冲的氟化物蚀刻溶液，其在<100>方向图案化时，其将硅切割以提供横向搁板。 当沿<100>方向图案化时，所得结构包括底切特征。

公开(公告)号：US20060249397A1

公开(公告)日：2006-11-09

申请号：US11482586

申请日：2006-07-06

申请人： Whonchee Lee ,  Scott Moore ,  Scott Meikle

发明人： Whonchee Lee ,  Scott Moore ,  Scott Meikle

IPC分类号： B23H7/14

CPC分类号： C25F7/00 ,  B23H5/08 ,  C25F3/14

摘要： Methods and apparatuses for detecting characteristics of a microelectronic substrate. A method in accordance with an embodiment of the invention includes positioning the microelectronic substrate proximate to and spaced apart from the first and second spaced apart electrodes, contacting the microelectronic substrate with a polishing surface of a polishing medium, removing conductive material from the microelectronic substrate by moving the substrate and/or the electrodes relative to each other while passing a variable electrical signal through the electrodes and the substrate, and detecting a change in the variable electrical signal or a supplemental electrical signal passing through the microelectronic substrate. The rate at which material is removed from the microelectronic substrate can be changed based at least in part on the change in the electrical signal.

公开(公告)号：US06881127B2

公开(公告)日：2005-04-19

申请号：US09915657

申请日：2001-07-25

申请人： Gundu M. Sabde ,  Whonchee Lee

发明人： Gundu M. Sabde ,  Whonchee Lee

IPC分类号： B24B21/04 ,  B24B37/24 ,  B24B37/26 ,  C10M125/20 ,  C10M129/08 ,  C10M145/04 ,  C10M145/28 ,  C10M145/30 ,  C10M173/02 ,  C10N20/02 ,  C10N40/00 ,  H01L21/304 ,  B24B1/00

CPC分类号： B24B37/245 ,  B24B21/04 ,  B24B37/26 ,  B24D2203/00

摘要： Methods and apparatuses for planarizing microelectronic substrate assemblies on fixed-abrasive polishing pads with non-abrasive lubricating planarizing solutions. One aspect of the invention is to deposit a lubricating planarizing solution without abrasive particles onto a fixed-abrasive polishing pad having a body, a planarizing surface on the body, and a plurality of abrasive particles fixedly attached to the body at the planarizing surface. The front face of a substrate assembly is pressed against the lubricating planarizing solution and at least a portion of the fixed abrasive particles on the planarizing surface of the polishing pad. At least one of the polishing pad or the substrate assembly is then moved with respect to the other to impart relative motion therebetween. As the substrate assembly moves relative to the polishing pad, regions of the front face are separated from the abrasive particles in the polishing pad by a lubricant-additive in the lubricating planarizing solution.

摘要翻译： 在具有非磨蚀性润滑平坦化溶液的固定研磨抛光垫上平面化微电子基板组件的方法和装置。 本发明的一个方面是将没有磨料颗粒的润滑平坦化溶液沉积在具有主体，主体上的平坦化表面的固定磨料抛光垫上，以及在平坦化表面处固定地附接到主体的多个磨料颗粒。 衬底组件的前表面被压在抛光垫的平坦化表面上的润滑平坦化溶液和固定磨料颗粒的至少一部分上。 然后抛光垫或基板组件中的至少一个相对于另一个移动以在其间进行相对运动。 当基板组件相对于抛光垫移动时，前表面的区域通过润滑平面化溶液中的润滑剂添加剂与抛光垫中的磨料颗粒分离。

公开(公告)号：US20050056550A1

公开(公告)日：2005-03-17

申请号：US10923441

申请日：2004-08-20

申请人： Whonchee Lee ,  Scott Moore ,  Brian Vaartstra

发明人： Whonchee Lee ,  Scott Moore ,  Brian Vaartstra

IPC分类号： B23H3/00 ,  B23H5/06 ,  B23H5/08 ,  B24B37/04 ,  C25F7/00 ,  C25D5/02

CPC分类号： B23H5/08 ,  B23H3/00 ,  B23H5/06 ,  B24B37/042 ,  C25F7/00

摘要： A method and apparatus for removing conductive material from a microelectronic substrate is disclosed. One method includes disposing an electrolytic liquid between a conductive material of a substrate and at least one electrode, with the electrolytic liquid having about 80% water or less. The substrate can be contacted with a polishing pad material, and the conductive material can be electrically coupled to a source of varying electrical signals via the electrolytic liquid and the electrode. The method can further include applying a varying electrical signal to the conductive material, moving at least one of the polishing pad material and the substrate relative to the other, and removing at least a portion of the conductive material while the electrolytic liquid is adjacent to the conductive material. By limiting/controlling the amount of water in the electrolytic liquid, an embodiment of the method can remove the conductive material with a reduced downforce.

摘要翻译： 公开了一种用于从微电子衬底去除导电材料的方法和装置。 一种方法包括在基板的导电材料和至少一个电极之间设置电解液，电解液具有约80％的水或更少的水。 衬底可以与抛光垫材料接触，并且导电材料可以经由电解液和电极电耦合到具有变化的电信号的源。 该方法可以进一步包括向导电材料施加变化的电信号，相对于另一个移动抛光垫材料和衬底中的至少一个，以及在电解液邻近该导电材料的同时移除至少一部分导电材料 导电材料。 通过限制/控制电解液中的水量，该方法的一个实施例可以以降低的下压力去除导电材料。

公开(公告)号：US20050034999A1

公开(公告)日：2005-02-17

申请号：US10926202

申请日：2004-08-24

申请人： Whonchee Lee ,  Scott Meikle ,  Scott Moore

发明人： Whonchee Lee ,  Scott Meikle ,  Scott Moore

IPC分类号： B23H3/00 ,  B23H5/08 ,  B24B1/00 ,  B24B7/19 ,  H01L21/8242 ,  H01L29/00

CPC分类号： B23H5/08 ,  B24B1/002

摘要： A method and apparatus for removing conductive material from a microelectronic substrate. In one embodiment, a support member supports a microelectronic substrate relative to a material removal medium, which can include first and second electrodes and a polishing pad. One or more electrolytes are disposed between the electrodes and the microelectronic substrate to electrically link the electrodes to the microelectronic substrate. The electrodes are then coupled to a source of varying current that electrically removes the conductive material from the substrate. The microelectronic substrate and/or the electrodes can be moved relative to each other to position the electrodes relative to a selected portion of the microelectronic substrate, and/or to polish the microelectronic substrate. The material removal medium can remove gas formed during the process from the microelectronic substrate and/or the electrodes. The medium can also have different first and second electrical characteristics to provide different levels of electrical coupling to different regions of the microelectronic substrate.

摘要翻译： 一种用于从微电子衬底去除导电材料的方法和装置。 在一个实施例中，支撑构件相对于材料去除介质支撑微电子衬底，其可以包括第一和第二电极以及抛光垫。 一个或多个电解质设置在电极和微电子衬底之间以将电极电连接到微电子衬底。 然后将电极耦合到电流从基板电除去导电材料的变化的电流源。 微电子衬底和/或电极可以相对于彼此移动以相对于微电子衬底的选定部分定位电极，和/或抛光微电子衬底。 材料去除介质可以从微电子衬底和/或电极去除在该过程期间形成的气体。 介质还可以具有不同的第一和第二电特性，以提供与微电子衬底的不同区域的不同水平的电耦合。