公开(公告)号：US20170352318A1

公开(公告)日：2017-12-07

申请号：US15685273

申请日：2017-08-24

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Jun KOYAMA ,  Hiroyuki MIYAKE

IPC: G09G3/36 ,  G06F3/044 ,  G06F3/041 ,  G06F3/042 ,  G02F1/1345

CPC classification number: G09G3/3618 ,  G02F1/1345 ,  G06F3/0416 ,  G06F3/0421 ,  G06F3/044 ,  G09G3/3648 ,  G09G3/3655 ,  G09G3/3696 ,  G09G2300/0809 ,  G09G2310/04 ,  G09G2310/061 ,  G09G2310/08 ,  G09G2320/0209 ,  G09G2320/0219 ,  G09G2320/10 ,  G09G2320/103 ,  G09G2330/021 ,  G09G2340/0435 ,  G09G2340/16 ,  G09G2354/00

Abstract: The liquid crystal display device includes a first substrate provided with a terminal portion, a switching transistor, a driver circuit portion, and a pixel circuit portion including a pixel transistor and a plurality of pixels, a second substrate provided with a common electrode electrically connected to the terminal portion through the switching transistor, and liquid crystal between a pixel electrode and the common electrode. In a period during which a still image is switched to a moving image, the following steps are sequentially performed: a first step of supplying the common potential to the common electrode; a second step of supplying a power supply voltage to the driver circuit portion; a third step of supplying a clock signal to the driver circuit portion; and a fourth step of supplying a start pulse signal to the driver circuit portion.

公开(公告)号：US20170344069A1

公开(公告)日：2017-11-30

申请号：US15679347

申请日：2017-08-17

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Jun KOYAMA

IPC: G06F1/16 ,  G06F1/26 ,  H01L29/786

Abstract: A portable electronic device that can operate even when electric power supplied through contactless charge by electromagnetic induction is low is provided. The portable electronic device includes a reflective liquid crystal display which includes a transistor including an oxide semiconductor, a power source portion which includes a rechargeable battery capable of charge by contactless charge, and a signal processing portion which includes a nonvolatile semiconductor memory device. In the portable electronic device, electric power stored in the rechargeable battery is used in the reflective liquid crystal display and the signal processing portion.

公开(公告)号：US20170317112A1

公开(公告)日：2017-11-02

申请号：US15652312

申请日：2017-07-18

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Jun KOYAMA ,  Atsushi HIROSE ,  Masashi TSUBUKU ,  Kosei NODA

IPC: H01L27/12 ,  H04M1/02 ,  H01L29/786 ,  H01L29/36 ,  H01L29/24 ,  H01L27/32 ,  H01L27/15 ,  H04R1/02 ,  H01L33/02 ,  H01L21/8234

CPC classification number: H01L27/1225 ,  H01L21/823412 ,  H01L27/124 ,  H01L27/1255 ,  H01L27/156 ,  H01L27/3213 ,  H01L29/24 ,  H01L29/36 ,  H01L29/7869 ,  H01L29/78693 ,  H01L33/025 ,  H01L2924/0002 ,  H04M1/0266 ,  H04R1/02 ,  H01L2924/00

Abstract: An object is to obtain a semiconductor device having a high sensitivity in detecting signals and a wide dynamic range, using a thin film transistor in which an oxide semiconductor layer is used. An analog circuit is formed with the use of a thin film transistor including an oxide semiconductor which has a function as a channel formation layer, has a hydrogen concentration of 5×1019 atoms/cm3 or lower, and substantially functions as an insulator in the state where no electric field is generated. Thus, a semiconductor device having a high sensitivity in detecting signals and a wide dynamic range can be obtained.

公开(公告)号：US20170250156A1

公开(公告)日：2017-08-31

申请号：US15434489

申请日：2017-02-16

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Akio ENDO ,  Yusuke YOSHITANI ,  Jun KOYAMA ,  Naoto KUSUMOTO

IPC: H01L23/00 ,  B23K20/26 ,  H04N5/378 ,  B23K20/02 ,  H01L27/146 ,  H04N5/225

Abstract: An imaging system using ultraviolet light or a manufacturing apparatus including the imaging system is provided. An imaging system includes an imaging element and a light source, which operates the imaging element with light that is emitted from the light source and reflected or transmitted by an object. A pixel included in the imaging element includes a photoelectric conversion element and a charge holding part. The light source has a function of emitting ultraviolet light to an object. The photoelectric conversion element is irradiated with the ultraviolet light reflected or transmitted by the object. The photoelectric conversion element has a function of changing the potential of the charge holding part when irradiated with the ultraviolet light and retaining the potential when not irradiated with the ultraviolet light.

公开(公告)号：US20170248128A1

公开(公告)日：2017-08-31

申请号：US15431015

申请日：2017-02-13

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Jun KOYAMA ,  Sho NAGAO

IPC: F03G7/08 ,  H01L27/105 ,  H01L29/786

CPC classification number: F03G7/08 ,  H01L27/1052 ,  H01L27/1225 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696

Abstract: A sensor system that does not require wiring connection is provided. The sensor system includes a power generator, a power storage device, a wireless device, a sensing device, and a power switch (PSW). Data is transmitted and received wirelessly. Energy harvesting with vibration or the like is used as a power source, and supply of power to an unused portion of the PSW is stopped.

公开(公告)号：US20170026039A1

公开(公告)日：2017-01-26

申请号：US15221845

申请日：2016-07-28

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Jun KOYAMA ,  Hiroyuki MIYAKE

IPC: H03K17/693 ,  G09G3/20 ,  H01L29/24 ,  G11C19/28 ,  H01L27/12 ,  H01L29/786

CPC classification number: H03K17/693 ,  G09G3/2092 ,  G09G3/3266 ,  G09G2300/0408 ,  G09G2300/08 ,  G09G2310/0267 ,  G09G2310/0286 ,  G09G2310/08 ,  G09G2330/021 ,  G11C19/28 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1251 ,  H01L29/24 ,  H01L29/7869 ,  H01L29/78696 ,  H03K17/002

Abstract: An object of the present invention is to provide a driver circuit including a normally-on thin film transistor, which driver circuit ensures a small malfunction and highly reliable operation. The driver circuit includes a static shift register including an inverter circuit having a first transistor and a second transistor, and a switch including a third transistor. The first to third transistors each include a semiconductor layer of an oxide semiconductor and are depletion-mode transistors. An amplitude voltage of clock signals for driving the third transistor is higher than a power supply voltage for driving the inverter circuit.

Abstract translation: 本发明的目的是提供一种驱动电路，该驱动电路包括一个通常的薄膜晶体管，该驱动电路确保了小故障和高可靠性的工作。 驱动器电路包括具有第一晶体管和第二晶体管的反相器电路的静态移位寄存器和包括第三晶体管的开关。 第一至第三晶体管各自包括氧化物半导体的半导体层，并且是耗尽型晶体管。 用于驱动第三晶体管的时钟信号的振幅电压高于用于驱动逆变器电路的电源电压。

公开(公告)号：US20160349119A1

公开(公告)日：2016-12-01

申请号：US15232120

申请日：2016-08-09

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Jun KOYAMA ,  Shunpei YAMAZAKI

IPC: G01K7/01

CPC classification number: G01K7/01

Abstract: To provide a highly accurate temperature sensor circuit. The temperature sensor circuit includes a first constant current circuit; a first diode in which a first voltage reflecting the temperature of an object to be detected is generated between an anode and a cathode in accordance with a first current supplied from the first constant current circuit; a second constant current circuit; a second diode which includes an oxide semiconductor and in which a second voltage is generated between an anode and a cathode in accordance with a second current supplied from the second constant current circuit; and an amplifier circuit which amplifies a difference between the first voltage and the second voltage.

公开(公告)号：US20160307607A1

公开(公告)日：2016-10-20

申请号：US15191661

申请日：2016-06-24

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Jun KOYAMA

IPC: G11C5/14 ,  G11C7/12 ,  G11C11/24 ,  H01L29/786 ,  G11C19/28

CPC classification number: G11C5/147 ,  G11C5/146 ,  G11C7/12 ,  G11C11/24 ,  G11C16/3418 ,  G11C19/28 ,  H01L27/1225 ,  H01L29/7869

Abstract: To stably control a threshold voltage of a functional circuit using an oxide semiconductor. A variable bias circuit, a monitoring oxide semiconductor transistor including a back gate, a current source, a differential amplifier, a reference voltage source, and a functional circuit which includes an oxide semiconductor transistor including a back gate are provided. The current source supplies current between a source and a drain of the monitoring oxide semiconductor transistor to generate a gate-source voltage in accordance with the current. The differential amplifier compares the voltage with a voltage of the reference voltage source, amplifies a difference, and outputs a resulting voltage to the variable bias circuit. The variable bias circuit is controlled by an output of the differential amplifier and supplies voltage to the back gate of the monitoring oxide semiconductor transistor and the back gate of the oxide semiconductor transistor included in the functional circuit.

公开(公告)号：US20160293606A1

公开(公告)日：2016-10-06

申请号：US15175190

申请日：2016-06-07

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Jun KOYAMA ,  Kiyoshi KATO

IPC: H01L27/105 ,  H01L29/786 ,  H01L27/12 ,  H01L29/24

CPC classification number: H01L27/1052 ,  G11C11/405 ,  G11C16/0433 ,  G11C2211/4016 ,  H01L21/8221 ,  H01L27/0688 ,  H01L27/105 ,  H01L27/108 ,  H01L27/115 ,  H01L27/11551 ,  H01L27/1156 ,  H01L27/11803 ,  H01L27/1207 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1255 ,  H01L29/16 ,  H01L29/24 ,  H01L29/247 ,  H01L29/7833 ,  H01L29/7869 ,  H01L29/78693 ,  H01L29/78696

Abstract: An object is to provide a semiconductor device with a novel structure. The semiconductor device includes a first wiring; a second wiring; a third wiring; a fourth wiring; a first transistor having a first gate electrode, a first source electrode, and a first drain electrode; and a second transistor having a second gate electrode, a second source electrode, and a second drain electrode. The first transistor is provided in a substrate including a semiconductor material. The second transistor includes an oxide semiconductor layer.

公开(公告)号：US20160293605A1

公开(公告)日：2016-10-06

申请号：US15179049

申请日：2016-06-10

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Jun KOYAMA

IPC: H01L27/108

CPC classification number: H01L27/108 ,  H01L27/10844 ,  H01L27/10852 ,  H01L27/10858 ,  H01L27/10873 ,  H01L29/24

Abstract: A semiconductor memory device which includes a memory cell including two or more sub memory cells is provided. The sub memory cells each including a word line, a bit line, a first capacitor, a second capacitor, and a transistor. In the semiconductor device, the sub memory cells are stacked in the memory cell; a first gate and a second gate are formed with a semiconductor film provided therebetween in the transistor; the first gate and the second gate are connected to the word line; one of a source and a drain of the transistor is connected to the bit line; the other of the source and the drain of the transistor is connected to the first capacitor and the second capacitor; and the first gate and the second gate of the transistor in each sub memory cell overlap with each other and are connected to each other.