公开(公告)号：US12161007B2

公开(公告)日：2024-12-03

申请号：US17370526

申请日：2021-07-08

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Satoshi Seo ,  Yoshiharu Hirakata ,  Takahiro Ishisone

IPC: H01L33/50 ,  C09K11/06 ,  F21S6/00 ,  F21S8/04 ,  H05B33/14 ,  H05B33/20 ,  H10K50/11 ,  H10K50/13 ,  B60Q3/10 ,  B60Q3/208 ,  F21Y115/10 ,  H10K101/10

Abstract: An object is to provide a light-emitting element which uses a plurality of kinds of light-emitting dopants and has high emission efficiency. In one embodiment of the present invention, a light-emitting device, a light-emitting module, a light-emitting display device, an electronic device, and a lighting device each having reduced power consumption by using the above light-emitting element are provided. Attention is paid to Förster mechanism, which is one of mechanisms of intermolecular energy transfer. Efficient energy transfer by Förster mechanism is achieved by making an emission wavelength of a molecule which donates energy overlap with a local maximum peak on the longest wavelength side of a graph obtained by multiplying an absorption spectrum of a molecule which receives energy by a wavelength raised to the fourth power.

公开(公告)号：US12161006B2

公开(公告)日：2024-12-03

申请号：US18233361

申请日：2023-08-14

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Satoshi Seo ,  Koji Kusunoki ,  Kei Takahashi

IPC: G09G5/10 ,  G09G3/3225 ,  H10K50/115 ,  H10K59/121

Abstract: A display device having a high display quality is provided. A display device that can perform desired display without image data conversion is provided. The display device includes a first pixel. The first pixel includes a first light-emitting element, a color conversion layer, and a first memory circuit. The first light-emitting element exhibits blue light. The color conversion layer has a function of converting light emitted by the first light-emitting element into light having a longer wavelength. A first image signal and a first correction signal are supplied to the first pixel. The first memory circuit has a function of retaining the first correction signal and a function of adding the first correction signal to the first image signal. The first pixel has a function of displaying an image using the first image signal and the first correction signal.

公开(公告)号：US12142738B2

公开(公告)日：2024-11-12

申请号：US18089008

申请日：2022-12-27

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Minoru Takahashi ,  Shunpei Yamazaki ,  Masaaki Hiroki ,  Kei Takahashi ,  Junpei Momo

IPC: H02J7/00 ,  H01M10/0525 ,  H01M10/44 ,  H01M10/46 ,  H01M10/48 ,  H01M10/615 ,  H01M10/63 ,  H01M10/637 ,  H01M10/6571 ,  H02J7/35 ,  H02S10/20 ,  H01M10/052

Abstract: Disclosed is a power storage unit which can safely operate over a wide temperature range. The power storage unit includes: a power storage device; a heater for heating the power storage device; a temperature sensor for sensing the temperature of the power storage device; and a control circuit configured to inhibit charge of the power storage device when its temperature is lower than a first temperature or higher than a second temperature. The first temperature is exemplified by a temperature which allows the formation of a dendrite over a negative electrode of the power storage device, whereas the second temperature is exemplified by a temperature which causes decomposition of a passivating film formed over a surface of a negative electrode active material.

公开(公告)号：US12142726B2

公开(公告)日：2024-11-12

申请号：US17438615

申请日：2020-03-12

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Kazutaka Kuriki ,  Ryota Tajima ,  Yumiko Yoneda

IPC: H01M10/0562 ,  H01M4/04 ,  H01M4/38 ,  H01M10/058 ,  H01M4/02

Abstract: An all-solid-state secondary battery having a higher level of safety than a conventional lithium-ion secondary battery using an electrolyte solution, specifically, a thin-film-type solid-state secondary battery, and a manufacturing method thereof are provided. As a solid electrolyte, a mixed material obtained by co-evaporation of SiO and an organic complex of lithium is used. That is, a solid electrolyte layer formed using a mixed material of an inorganic material and an organic material is used in a solid-state secondary battery. The ratio of oxygen to silicon in the solid electrolyte layer is higher than 1 and lower than 2.

公开(公告)号：US12132121B2

公开(公告)日：2024-10-29

申请号：US18107559

申请日：2023-02-09

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Satoshi Shinohara

IPC: H01L29/786 ,  H01L29/04 ,  H01L29/24

CPC classification number: H01L29/78696 ,  H01L29/045 ,  H01L29/24 ,  H01L29/786 ,  H01L29/7869 ,  H01L29/78693

Abstract: Provided are a transistor which has electrical characteristics requisite for its purpose and uses an oxide semiconductor layer and a semiconductor device including the transistor. In the bottom-gate transistor in which at least a gate electrode layer, a gate insulating film, and the semiconductor layer are stacked in this order, an oxide semiconductor stacked layer including at least two oxide semiconductor layers whose energy gaps are different from each other is used as the semiconductor layer. Oxygen and/or a dopant may be added to the oxide semiconductor stacked layer.

公开(公告)号：US12130659B2

公开(公告)日：2024-10-29

申请号：US18371552

申请日：2023-09-22

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Yoshiharu Hirakata

IPC: G06F1/16 ,  G02F1/1333 ,  G02F1/1345 ,  H05K1/14

CPC classification number: G06F1/1601 ,  G06F1/1626 ,  G06F1/1637 ,  G02F1/133305 ,  G02F1/133308 ,  G02F1/13452 ,  G06F1/1652 ,  H05K1/147

Abstract: A display device includes a display panel mounted on a curved surface, and driver circuits including circuit elements which are mounted on a plurality of plane surfaces provided on the back of the curved surface in a stepwise shape along the curved surface.

公开(公告)号：US12127419B2

公开(公告)日：2024-10-22

申请号：US18372234

申请日：2023-09-25

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Satoshi Seo ,  Shunpei Yamazaki ,  Takahiro Ishisone

IPC: H10K50/13 ,  H10K50/11 ,  H10K50/85 ,  H10K85/30 ,  H10K85/60 ,  H10K101/00 ,  H10K101/10 ,  H10K101/40 ,  H10K102/10

CPC classification number: H10K50/13 ,  H10K50/11 ,  H10K50/85 ,  H10K85/342 ,  H10K85/611 ,  H10K85/626 ,  H10K85/633 ,  H10K85/636 ,  H10K85/6572 ,  H10K85/6576 ,  H10K2101/10 ,  H10K2101/40 ,  H10K2101/90 ,  H10K2102/103

Abstract: An object is to provide a light-emitting element which uses a plurality of kinds of light-emitting dopants and has high emission efficiency. In one embodiment of the present invention, a light-emitting device, a light-emitting module, a light-emitting display device, an electronic device, and a lighting device each having reduced power consumption by using the above light-emitting element are provided. Attention is paid to Förster mechanism, which is one of mechanisms of intermolecular energy transfer. Efficient energy transfer by Förster mechanism is achieved by making an emission wavelength of a molecule which donates energy overlap with the longest-wavelength-side local maximum peak of a graph obtained by multiplying an absorption spectrum of a molecule which receives energy by a wavelength raised to the fourth power.

公开(公告)号：US12120446B2

公开(公告)日：2024-10-15

申请号：US18008302

申请日：2021-07-12

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunsuke Sato ,  Seiichi Yoneda ,  Yusuke Negoro ,  Takeya Hirose ,  Shunpei Yamazaki

IPC: H04N25/77

CPC classification number: H04N25/77

Abstract: An imaging device that has an image processing function and is capable of operating at high speed is provided. The imaging device has an additional function such as image processing, image data obtained by an imaging operation is binarized in a pixel unit, and a product-sum operation is performed using the binarized data. A memory circuit is provided in the pixel unit and retains a weight coefficient used for the product-sum operation. Thus, an arithmetic operation can be performed without the weight coefficient read from the outside every time, whereby power consumption can be reduced. Furthermore, a pixel circuit, a memory circuit, and the like and a product-sum operation circuit and the like are stacked, so that the lengths of wirings between the circuits can be reduced, and high-speed operation with low power consumption can be performed.

公开(公告)号：US12119406B2

公开(公告)日：2024-10-15

申请号：US17852423

申请日：2022-06-29

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/49 ,  H01L29/78 ,  H10K10/46

CPC classification number: H01L29/7869 ,  H01L27/1251 ,  H01L29/4908 ,  H01L29/7831 ,  H01L29/786 ,  H01L29/78693 ,  H10K10/46 ,  H10K10/468 ,  H10K10/474 ,  H01L27/1225

Abstract: The oxide semiconductor film has the top and bottom surface portions each provided with a metal oxide film containing a constituent similar to that of the oxide semiconductor film. An insulating film containing a different constituent from the metal oxide film and the oxide semiconductor film is further formed in contact with a surface of the metal oxide film, which is opposite to the surface in contact with the oxide semiconductor film. The oxide semiconductor film used for the active layer of the transistor is an oxide semiconductor film highly purified to be electrically i-type (intrinsic) by removing impurities such as hydrogen, moisture, a hydroxyl group, and hydride from the oxide semiconductor and supplying oxygen which is a major constituent of the oxide semiconductor and is simultaneously reduced in a step of removing impurities.

公开(公告)号：US12113074B2

公开(公告)日：2024-10-08

申请号：US18231830

申请日：2023-08-09

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki

IPC: H01L27/12 ,  H01L21/02 ,  H01L29/10 ,  H01L29/24 ,  H01L29/66 ,  H01L29/786

CPC classification number: H01L27/1225 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L27/1266 ,  H01L29/1033 ,  H01L29/24 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/7869

Abstract: A more convenient and highly reliable semiconductor device which has a transistor including an oxide semiconductor with higher impact resistance used for a variety of applications is provided. A semiconductor device has a bottom-gate transistor including a gate electrode layer, a gate insulating layer, and an oxide semiconductor layer over a substrate, an insulating layer over the transistor, and a conductive layer over the insulating layer. The insulating layer covers the oxide semiconductor layer and is in contact with the gate insulating layer. In a channel width direction of the oxide semiconductor layer, end portions of the gate insulating layer and the insulating layer are aligned with each other over the gate electrode layer, and the conductive layer covers a channel formation region of the oxide semiconductor layer and the end portions of the gate insulating layer and the insulating layer and is in contact with the gate electrode layer.