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公开(公告)号：US20200150471A1
公开(公告)日：2020-05-14
申请号：US16667948
申请日：2019-10-30
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Shunpei YAMAZAKI , Toru TAKAYAMA , Satoshi MURAKAMI , Hajime KIMURA
IPC: G02F1/1368 , G02F1/1362 , G02F1/1333 , H05B33/04 , H01L51/52 , H01L27/32
Abstract: A structure for preventing deteriorations of a light-emitting device and retaining sufficient capacitor elements (condenser) required by each pixel is provided. A first passivation film, a second metal layer, a flattening film, a barrier film, and a third metal layer are stacked in this order over a transistor. A side face of a first opening provided with the flattening film is covered by the barrier film, a second opening is formed inside the first opening, and a third metal layer is connected to a semiconductor via the first opening and the second opening. A capacitor element that is formed of a lamination of a semiconductor of a transistor, a gate insulating film, a gate electrode, the first passivation film, and the second metal layer is provided.
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公开(公告)号：US20190067336A1
公开(公告)日：2019-02-28
申请号：US16107536
申请日：2018-08-21
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Shunpei YAMAZAKI , Satoshi MURAKAMI , Masahiko HAYAKAWA , Kiyoshi KATO , Mitsuaki OSAME
Abstract: It is an object of the present invention to provide a semiconductor display device having an interlayer insulating film which can obtain planarity of a surface while controlling film formation time, can control treatment time of heating treatment with an object of removing moisture, and can prevent moisture in the interlayer insulating film from being discharged to a film or an electrode adjacent to the interlayer insulating film. An inorganic insulating film containing nitrogen, which is less likely to transmit moisture compared with an organic resin, is formed so as to cover a TFT. Next, an organic resin film containing photosensitive acrylic resin is applied to the organic insulting film, and the organic resin film is partially exposed to light to be opened. Thereafter, an inorganic insulting film containing nitrogen, which is less likely to transmit moisture compared with an organic resin, is fanned so as to cover the opened organic resin film. Then, in the opening part of the organic resin film, a gate insulating film and the two layer inorganic insulating film containing nitrogen are opened partially by etching to expose an active layer of the TFT.
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公开(公告)号：US20170186780A1
公开(公告)日：2017-06-29
申请号：US15361724
申请日：2016-11-28
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Shunpei YAMAZAKI , Satoshi MURAKAMI , Mitsuaki OSAME
CPC classification number: H01L27/1248 , H01L27/1214 , H01L27/124 , H01L27/1255 , H01L27/3244 , H01L27/3246 , H01L27/3258 , H01L27/326 , H01L27/3262 , H01L29/4958 , H01L29/4966 , H01L29/78645 , H01L51/5237 , H01L51/524 , H01L51/5253 , H01L51/5271 , H01L2251/5315
Abstract: Disclosed is a display device including a seal material and a sealing material. The seal material surrounds a pixel portion and the sealing material overlaps with at least any of a driver circuit and a protective circuit. The pixel portion includes a planarization layer and an organic resin film each having an opening, an end portion of which is rounded. The pixel portion further includes a first electrode, a light-emitting member over the first electrode, and a second electrode over the light-emitting member. Part of the first electrode and part of the organic resin film are located in the opening of the planarization layer. Part of the light-emitting member and Part of the second electrode are located in the opening of the organic resin film.
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公开(公告)号：US20170069872A1
公开(公告)日：2017-03-09
申请号：US15262629
申请日：2016-09-12
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Satoshi MURAKAMI , Hisashi OHTANI , Shunpei YAMAZAKI
CPC classification number: H01L51/5246 , H01L27/3225 , H01L27/3244 , H01L27/3246 , H01L27/3276 , H01L27/3295 , H01L27/3297 , H01L51/0005 , H01L51/5203 , H01L51/5237 , H01L51/525 , H01L51/5253 , H01L51/56 , H01L2251/5323
Abstract: It is an object of the present invention to provide a technology for manufacturing a highly reliable display device at a low cost with high yield. In the present invention, a spacer is formed over a pixel electrode, thereby protecting the pixel electrode layer from a mask in formation of an electroluminescent layer. In addition, since a layer that includes an organic material that has water permeability is sealed in a display device with a sealing material and the sealing material and the layer that includes the organic material are not in contact, deterioration of a light-emitting element due to a contaminant such as water can be prevented. The sealing material is formed in a portion of a driver circuit region in the display device, and thus, the narrower frame margin of the display device can also be accomplished.
Abstract translation: 本发明的目的是提供一种以高成本低成本制造高度可靠的显示装置的技术。 在本发明中，在像素电极上形成间隔物，从而在形成电致发光层时保护像素电极层免受掩模的影响。 此外，由于包含具有透水性的有机材料的层被密封在具有密封材料的显示装置中，并且密封材料和包含有机材料的层不接触，所以发光元件的劣化由于 可以防止诸如水的污染物。 密封材料形成在显示装置中的驱动电路区域的一部分中，因此也可以实现显示装置的较窄的边缘。
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公开(公告)号：US20160293684A1
公开(公告)日：2016-10-06
申请号：US15177470
申请日：2016-06-09
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Satoshi MURAKAMI , Mitsuhiro ICHIJO , Taketomi ASAMI
IPC: H01L27/32
CPC classification number: H01L27/3258 , H01L21/7684 , H01L21/76841 , H01L27/12 , H01L27/1214 , H01L27/1248 , H01L27/1251 , H01L27/1255 , H01L27/3244 , H01L27/3246 , H01L27/3248 , H01L33/0041 , H01L51/5221 , H01L51/5253 , H01L2227/323 , H01L2924/0002 , H01L2924/00
Abstract: In the case where a material containing an alkaline-earth metal in a cathode, is used, there is a fear of the diffusion of an impurity ion (such as alkaline-earth metal ion) from the EL element to the TFT being generated and causing the variation of characteristics of the TFT. Therefore, as the insulating film provided between TFT and EL element, a film containing a material for not only blocking the diffusion of an impurity ion such as an alkaline-earth metal ion but also aggressively absorbing an impurity ion such as an alkaline-earth metal ion is used.
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Patent Agency Ranking
公开(公告)号：US20160163470A1
公开(公告)日：2016-06-09
申请号：US15011857
申请日：2016-02-01
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Satoshi MURAKAMI , Kazutaka KURIKI , Mikio YUKAWA
IPC: H01G11/24 , H01M10/0525 , H01M4/52 , H01G11/46 , H01M4/48
CPC classification number: H01G11/24 , C23C16/24 , H01G11/30 , H01G11/46 , H01M4/0428 , H01M4/134 , H01M4/1395 , H01M4/48 , H01M4/52 , H01M4/661 , H01M10/0525 , H01M2220/20 , H01M2220/30 , Y02E60/122 , Y02E60/13 , Y02P70/54 , Y02T10/7022 , Y10T29/417 , Y10T29/49115
Abstract: A power storage device which can have an improved performance such as higher discharge capacity and in which deterioration due to peeling of an active material layer or the like is difficult to occur, and a method for manufacturing the power storage device are provided. The power storage device includes a current collector, a mixed layer formed over the current collector, and a crystalline silicon layer which is formed over the mixed layer and functions as an active material layer. The crystalline silicon layer includes a crystalline silicon region and a whisker-like crystalline silicon region including a plurality of protrusions projecting over the crystalline silicon region. The whisker-like crystalline silicon region includes a protrusion having a bending or branching portion.
Abstract translation: 能够提高放电容量等改善性能的蓄电装置，由于活性物质层等的剥离而导致的劣化难以发生，并且提供了蓄电装置的制造方法。 蓄电装置包括集电体，在集电体上形成的混合层，以及形成在混合层上并用作活性物质层的晶体硅层。 结晶硅层包括晶体硅区域和晶须状晶体硅区域，其包括在结晶硅区域上突出的多个突起。 晶须状结晶硅区域包括具有弯曲或分支部分的突起。
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公开(公告)号：US20150160490A1
公开(公告)日：2015-06-11
申请号：US14511197
申请日：2014-10-10
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Shunpei YAMAZAKI , Toru TAKAYAMA , Satoshi MURAKAMI , Hajime KIMURA
IPC: G02F1/1368 , G02F1/1333 , G02F1/1362
CPC classification number: G02F1/1368 , G02F1/133305 , G02F1/136277 , H01L27/3244 , H01L27/3258 , H01L27/3265 , H01L51/5237 , H01L2251/5315 , H05B33/04
Abstract: A structure for preventing deteriorations of a light-emitting device and retaining sufficient capacitor elements (condenser) required by each pixel is provided. A first passivation film, a second metal layer, a flattening film, a barrier film, and a third metal layer are stacked in this order over a transistor. A side face of a first opening provided with the flattening film is covered by the barrier film, a second opening is formed inside the first opening, and a third metal layer is connected to a semiconductor via the first opening and the second opening. A capacitor element that is formed of a lamination of a semiconductor of a transistor, a gate insulating film, a gate electrode, the first passivation film, and the second metal layer is provided.
Abstract translation: 提供一种用于防止发光装置的劣化并保留每个像素所需的足够的电容器元件（电容器）的结构。 依次层叠第一钝化膜，第二金属层，平坦化膜，阻挡膜和第三金属层。 设置有平坦化膜的第一开口的侧面由阻挡膜覆盖，第一开口内部形成第二开口，第三金属层经由第一开口和第二开口连接到半导体。 提供了由晶体管，栅极绝缘膜，栅电极，第一钝化膜和第二金属层的半导体层叠形成的电容器元件。
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公开(公告)号：US20130313645A1
公开(公告)日：2013-11-28
申请号：US13957870
申请日：2013-08-02
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Satoshi MURAKAMI , Masahiko Hayakawa , Shunpei Yamazaki
IPC: H01L29/786
CPC classification number: H01L27/1248 , G02F1/133512 , G02F1/1337 , G02F1/1339 , G02F1/1341 , G02F1/13439 , G02F1/136213 , G02F1/136227 , G02F1/136286 , G02F1/1368 , G02F2201/123 , H01L23/3171 , H01L23/49827 , H01L27/1218 , H01L27/124 , H01L27/3248 , H01L27/3258 , H01L27/3276 , H01L29/41733 , H01L29/42384 , H01L29/66757 , H01L29/66765 , H01L29/786 , H01L29/78606 , H01L29/78651 , H01L2251/5315 , H01L2251/5338 , H01L2924/0002 , Y10S438/95 , H01L2924/00
Abstract: A semiconductor having an active layer; a gate insulating film in contact with the semiconductor; a gate electrode opposite to the active layer through the gate insulating film; a first nitride insulating film formed over the active layer; a photosensitive organic resin film formed on the first nitride insulating film; a second nitride insulating film formed on the photosensitive organic resin film; and a wiring provided on the second, nitride insulating film. A first opening portion is provided in the photosensitive organic resin film, an inner wall surface of the first opening portion is covered with the second nitride insulating film, a second opening portion is provided in a laminate including the gate insulating film, the first nitride insulating film, and the second nitride insulating film inside the first opening portion, and the semiconductor is connected with the wiring through the first opening portion and the second opening portion.
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公开(公告)号：US20130277709A1
公开(公告)日：2013-10-24
申请号：US13922920
申请日：2013-06-20
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Shunpei YAMAZAKI , Satoshi MURAKAMI , Mitsuaki OSAME
IPC: H01L27/12
CPC classification number: H01L27/1248 , H01L27/1214 , H01L27/124 , H01L27/1255 , H01L27/3244 , H01L27/3246 , H01L27/3258 , H01L27/326 , H01L27/3262 , H01L29/4958 , H01L29/4966 , H01L29/78645 , H01L51/5237 , H01L51/524 , H01L51/5253 , H01L51/5271 , H01L2251/5315
Abstract: Disclosed is a display device and an electronic apparatus incorporating the display device. The display device includes a transistor and a planarization film over the transistor. The planarization film has an opening where an edge portion is rounded. The display device further includes a first electrode over the planarization film and an organic resin film over the first electrode. The organic resin film also has an opening where an edge portion is rounded. The organic resin film is located in the opening of the planarization film. The first electrode and the transistor are electrically connected to each other through a conductive film. The first electrode is in contact with a top surface of the conductive film. Over the first electrode, a light-emitting member and a second electrode are provided.
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公开(公告)号：US20190129214A1
公开(公告)日：2019-05-02
申请号：US16192844
申请日：2018-11-16
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Shunpei YAMAZAKI , Toru TAKAYAMA , Satoshi MURAKAMI , Hajime KIMURA
IPC: G02F1/1368 , G02F1/1362 , G02F1/1333 , H05B33/04 , H01L27/32 , H01L51/52
Abstract: A structure for preventing deteriorations of a light-emitting device and retaining sufficient capacitor elements (condenser) required by each pixel is provided. A first passivation film, a second metal layer, a flattening film, a barrier film, and a third metal layer are stacked in this order over a transistor. A side face of a first opening provided with the flattening film is covered by the barrier film, a second opening is formed inside the first opening, and a third metal layer is connected to a semiconductor via the first opening and the second opening. A capacitor element that is formed of a lamination of a semiconductor of a transistor, a gate insulating film, a gate electrode, the first passivation film, and the second metal layer is provided.
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