公开(公告)号：US08298703B2

公开(公告)日：2012-10-30

申请号：US12446662

申请日：2007-10-19

Applicant: Junill Yoon ,  Seung-Taek Hong ,  Seung-Jin Yang

Inventor： Junill Yoon ,  Seung-Taek Hong ,  Seung-Jin Yang

IPC: H01M2/02 ,  H01M2/14 ,  H01M2/16 ,  H01M2/18 ,  H01G9/00

CPC classification number: H01M2/34 ,  H01M2/0245 ,  H01M2/0262 ,  H01M2/0287 ,  H01M2/305 ,  H01M2/347

Abstract: Disclosed herein is a battery module including at least one battery cell constructed in a structure in which an electrode assembly of a cathode/separator/anode structure is mounted in a battery case such that electrode leads of the electrode assembly protrude outside, wherein, when external impacts are directly or indirectly applied to the battery cell, with the result that the electrode leads move toward the electrode assembly of the battery cell, the external impacts are absorbed by the deformation of the electrode leads or the deformation of predetermined regions (‘electrode lead facing parts’) of the module in direct contact with or adjacent to the electrode leads, whereby the occurrence of a short circuit due to the contact between the electrode assembly and the electrode leads is prevented.

Abstract translation: 本文公开了一种电池模块，其包括至少一个电池单元，该电池单元构造成将阴极/隔板/阳极结构的电极组件安装在电池壳体中，使得电极组件的电极引线向外突出，其中，当外部 冲击直接或间接地施加到电池单元，结果是电极引线朝向电池单元的电极组件移动，外部冲击被电极引线的变形或预定区域的变形（电极引线面 部分）与电极引线直接接触或相邻，从而防止了由于电极组件和电极引线之间的接触引起的短路的发生。

公开(公告)号：US20110316092A1

公开(公告)日：2011-12-29

申请号：US13050241

申请日：2011-03-17

Applicant: Seung-Jin Yang ,  Yong-Tae Kim ,  Hyuck-Soo Yang ,  Jung-Ho Moon

Inventor： Seung-Jin Yang ,  Yong-Tae Kim ,  Hyuck-Soo Yang ,  Jung-Ho Moon

IPC: H01L27/112

CPC classification number: H01L27/0203 ,  H01L27/112 ,  H01L27/11253

Abstract: A mask read-only memory (ROM) includes parallel doping lines of a second conductivity type formed in a substrate of a first conductivity type, a first insulation film formed on the doping lines and the substrate, conductive pads fainted on the first insulation film, a second insulation film formed on the first insulation film and the conductive pads, parallel wires formed on the second insulation film extending perpendicular to the doping lines, contact plugs formed in the first insulation film that connect the doping lines to the conductive pads, and vias formed in the second insulation film that connect the conductive pads to the wires, wherein crossings of the doping lines and the wires define memory cells, contact plugs and vias are formed in memory cells of a first type, and at least one of the contact plug and via are missing from memory cells of a second type.

Abstract translation: 掩模只读存储器（ROM）包括形成在第一导电类型的衬底中的第二导电类型的并行掺杂线，形成在掺杂线和衬底上的第一绝缘膜，位于第一绝缘膜上的导电焊盘， 形成在所述第一绝缘膜和所述导电焊盘上的第二绝缘膜，形成在垂直于所述掺杂线延伸的所述第二绝缘膜上的平行布线，形成在将所述掺杂线连接到所述导电焊盘的所述第一绝缘膜中的接触插塞，以及通孔 形成在所述第二绝缘膜中，所述第二绝缘膜将所述导电焊盘连接到所述导线，其中所述掺杂线和所述布线的交叉限定存储器单元，接触插塞和通孔形成在第一类型的存储器单元中，并且所述接触插塞 并且第二类型的存储器单元中缺少通孔。

公开(公告)号：US08071231B2

公开(公告)日：2011-12-06

申请号：US12310604

申请日：2007-08-25

Applicant: Seung-Jin Yang ,  Jeong Hee Choi ,  Hanho Lee ,  Ji Heon Ryu

Inventor： Seung-Jin Yang ,  Jeong Hee Choi ,  Hanho Lee ,  Ji Heon Ryu

IPC: H01M2/12

CPC classification number: H01M2/1235 ,  H01M2/0207 ,  H01M2/0275 ,  H01M2/0277 ,  H01M2/0285 ,  H01M2/0287 ,  H01M2/08 ,  H01M2/1229 ,  H01M10/0436 ,  H01M10/052 ,  H01M10/0583 ,  H01M10/0585

Abstract: Disclosed herein is a plate-shaped secondary battery constructed in a structure in which an electrode assembly of a cathode/separator/anode structure is mounted in a battery case, and the battery case is sealed by thermal welding, wherein the secondary battery has at least one valve (one-way exhaust valve), having a small thickness, mounted at a sealed portion, formed at the outer circumference of an electrode assembly receiving part of the battery case, for allowing internal high-pressure gas to be exhausted out of a battery cell and preventing external gas from being introduced into the battery cell. The secondary battery according to the present invention has the effect of effectively exhausting internal high-pressure gas generated during the abnormal operation of the battery, such as overcharge, out of the battery case, while maintaining the sealability of the battery case, thereby simultaneously improving the efficiency and safety of the battery.

Abstract translation: 这里公开了一种板状二次电池，其结构是将阴极/隔板/阳极结构的电极组件安装在电池壳体中，并且电池壳体通过热焊接而被密封，其中二次电池具有至少 一个安装在密封部分的具有小厚度的阀（单向排气阀），形成在电池组件的电极组件接收部分的外周处，用于允许内部高压气体从 并且防止外部气体被引入电池单体。 根据本发明的二次电池具有在保持电池壳体的密封性的同时有效地排出在电池异常操作期间产生的内部高压气体（例如过充电）从电池壳体中排出的效果，从而同时改善 电池的效率和安全性。

公开(公告)号：US20100068608A1

公开(公告)日：2010-03-18

申请号：US12446662

申请日：2007-10-19

Applicant: Junill Yoon ,  Seung-Taek Hong ,  Seung-Jin Yang

Inventor： Junill Yoon ,  Seung-Taek Hong ,  Seung-Jin Yang

IPC: H01M6/10 ,  H01M2/02

CPC classification number: H01M2/34 ,  H01M2/0245 ,  H01M2/0262 ,  H01M2/0287 ,  H01M2/305 ,  H01M2/347

Abstract: Disclosed herein is a battery module including at least one battery cell constructed in a structure in which an electrode assembly of a cathode/separator/anode structure is mounted in a battery case such that electrode leads of the electrode assembly protrude outside, wherein, when external impacts are directly or indirectly applied to the battery cell, with the result that the electrode leads move toward the electrode assembly of the battery cell, the external impacts are absorbed by the deformation of the electrode leads or the deformation of predetermined regions (‘electrode lead facing parts’) of the module in direct contact with or adjacent to the electrode leads, whereby the occurrence of a short circuit due to the contact between the electrode assembly and the electrode leads is prevented.

Abstract translation: 本文公开了一种电池模块，其包括至少一个电池单元，该电池单元构造成将阴极/隔板/阳极结构的电极组件安装在电池壳体中，使得电极组件的电极引线向外突出，其中，当外部 冲击直接或间接地施加到电池单元，结果是电极引线朝向电池单元的电极组件移动，外部冲击被电极引线的变形或预定区域的变形（'电极引线 面对部件'）直接接触或邻近电极引线，由此防止了由于电极组件和电极引线之间的接触引起的短路的发生。

公开(公告)号：US20070105014A1

公开(公告)日：2007-05-10

申请号：US11548084

申请日：2006-10-10

Applicant: Youngjoon Shin ,  Min Su Kim ,  Ji Heon Ryu ,  Jeong Hee Choi ,  Seung-Jin Yang

Inventor： Youngjoon Shin ,  Min Su Kim ,  Ji Heon Ryu ,  Jeong Hee Choi ,  Seung-Jin Yang

IPC: H01M2/24 ,  H01M6/42 ,  H01M2/26

CPC classification number: H01M10/0413 ,  H01M2/0275 ,  H01M2/0287 ,  H01M2/266 ,  H01M10/0431 ,  H01M10/0525 ,  H01M10/0583 ,  H01M10/4235

Abstract: Disclosed herein are an electrode assembly including a plurality of unit cells folded by a continuous separation film wherein the unit cells are arranged on the separation film such that electrode taps of the unit cells face each other, the separation film has openings corresponding to the electrode taps of the unit cells, and the electrode assembly is manufactured by folding the unit cells in the longitudinal (lengthwise) direction of the separation film while the unit cells are disposed such that the electrode taps of the unit cells are inserted into the corresponding openings, and an electrochemical cell, such as a secondary battery, including the same. The electrode assembly according to the present invention is a hybrid type electrode assembly solving the problems of the jelly-roll type electrode assembly and the stacking type electrode assembly. Consequently, when external impacts are applied to the electrode assembly, for example, the electrode assembly falls, it is possible to minimize the occurrence of internal short circuits and thus to improve the safety of the electrode assembly. Furthermore, it is possible to perform the process for impregnating (wetting) the electrolyte into the electrodes in a short time during the assembly of the electrochemical cell.

Abstract translation: 本文公开了一种电极组件，其包括由连续分离膜折叠的多个单元电池，其中单元电池布置在分离膜上，使得单元电池的电极抽头彼此面对，分离膜具有对应于电极抽头的开口 的单元电池，并且通过在分离膜的纵向（纵向）方向上折叠单元电池而制造电极组件，同时单元电池被布置成使得单元电池的电极抽头插入到相应的开口中，并且 包括其的电化学电池，例如二次电池。 根据本发明的电极组件是解决胶卷型电极组件和堆叠型电极组件的问题的混合型电极组件。 因此，当对电极组件施加外部冲击时，例如电极组件掉落，可以最小化内部短路的发生，从而提高电极组件的安全性。 此外，可以在组装电化学电池期间在短时间内进行浸渍（润湿）电解质到电极中的工艺。

公开(公告)号：US20060046388A1

公开(公告)日：2006-03-02

申请号：US11214247

申请日：2005-08-29

Applicant: Young-Sam Park ,  Seung-Beom Yoon ,  Jeong-Uk Han ,  Sung-Taeg Kang ,  Seung-Jin Yang

Inventor： Young-Sam Park ,  Seung-Beom Yoon ,  Jeong-Uk Han ,  Sung-Taeg Kang ,  Seung-Jin Yang

IPC: H01L21/336 ,  H01L21/3205 ,  H01L21/8238

CPC classification number: H01L21/28273 ,  H01L29/42324 ,  H01L29/66553 ,  H01L29/66795 ,  H01L29/7851 ,  H01L29/7853 ,  H01L29/7854 ,  H01L29/7881

Abstract: A nonvolatile semiconductor device and a method of fabricating the same are provided. The nonvolatile semiconductor device includes a semiconductor body formed on a substrate to be elongated in one direction and having a cross section perpendicular to a main surface of the substrate and elongated direction, the cross section having a predetermined curvature, a channel region partially formed along the circumference of the semiconductor body, a tunneling insulating layer disposed on the channel region, a floating gate disposed on the tunneling insulating layer and electrically insulated from the channel region, an intergate insulating layer disposed on the floating gate, a control gate disposed on the intergate insulating layer and electrically insulated from the floating gate, and source and drain regions which are aligned with both sides of the control gate and formed within the semiconductor body.

Abstract translation: 提供一种非易失性半导体器件及其制造方法。 非易失性半导体器件包括形成在基板上的半导体本体，该半导体本体在一个方向上被延伸并且具有垂直于基板的主表面和细长方向的横截面，该横截面具有预定的曲率， 设置在沟道区域上的隧道绝缘层，设置在隧道绝缘层上并与沟道区电绝缘的浮置栅极，设置在浮动栅极上的栅极间绝缘层，设置在栅极上的控制栅极 绝缘层和与浮置栅极电绝缘的源极和漏极区域，其与控制栅极的两侧对准并形成在半导体本体内。

公开(公告)号：US08507997B2

公开(公告)日：2013-08-13

申请号：US13050241

申请日：2011-03-17

Applicant: Seung-Jin Yang ,  Yong-Tae Kim ,  Hyuck-Soo Yang ,  Jung-Ho Moon

Inventor： Seung-Jin Yang ,  Yong-Tae Kim ,  Hyuck-Soo Yang ,  Jung-Ho Moon

IPC: H01L21/70

CPC classification number: H01L27/0203 ,  H01L27/112 ,  H01L27/11253

Abstract: A mask read-only memory (ROM) includes parallel doping lines of a second conductivity type formed in a substrate of a first conductivity type, a first insulation film formed on the doping lines and the substrate, conductive pads fainted on the first insulation film, a second insulation film formed on the first insulation film and the conductive pads, parallel wires formed on the second insulation film extending perpendicular to the doping lines, contact plugs formed in the first insulation film that connect the doping lines to the conductive pads, and vias formed in the second insulation film that connect the conductive pads to the wires, wherein crossings of the doping lines and the wires define memory cells, contact plugs and vias are formed in memory cells of a first type, and at least one of the contact plug and via are missing from memory cells of a second type.

Abstract translation: 掩模只读存储器（ROM）包括形成在第一导电类型的衬底中的第二导电类型的并行掺杂线，形成在掺杂线和衬底上的第一绝缘膜，位于第一绝缘膜上的导电焊盘， 形成在所述第一绝缘膜和所述导电焊盘上的第二绝缘膜，形成在垂直于所述掺杂线延伸的所述第二绝缘膜上的平行布线，形成在将所述掺杂线连接到所述导电焊盘的所述第一绝缘膜中的接触插塞，以及通孔 形成在所述第二绝缘膜中，所述第二绝缘膜将所述导电焊盘连接到所述导线，其中所述掺杂线和所述布线的交叉限定存储器单元，接触插塞和通孔形成在第一类型的存储器单元中，并且所述接触插塞 并且第二类型的存储器单元中缺少通孔。

公开(公告)号：US07973314B2

公开(公告)日：2011-07-05

申请号：US12117630

申请日：2008-05-08

Applicant: Seung-Jin Yang ,  Jeong-Uk Han ,  Yong-Tae Kim ,  Yong-Suk Choi ,  Hyok-Ki Kwon

Inventor： Seung-Jin Yang ,  Jeong-Uk Han ,  Yong-Tae Kim ,  Yong-Suk Choi ,  Hyok-Ki Kwon

IPC: H01L29/76 ,  H01L31/036 ,  H01L31/112

CPC classification number: H01L27/105 ,  H01L21/76898 ,  H01L21/8221 ,  H01L23/485 ,  H01L27/0688 ,  H01L27/115 ,  H01L27/11526 ,  H01L27/11546 ,  H01L27/11551 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor device has a first semiconductor layer including a first circuit, a second semiconductor layer disposed on the first semiconductor layer and having a second circuit, and a via extending through portions of the first and second semiconductor layers and by which the first and second circuits are electrically connected. One of the circuits is a logic circuit and the other of the circuits is a memory circuit. The semiconductor device is manufactured by fabricating transistors of the logic and memory circuits on respective substrates, stacking the substrates, and electrically connecting the logic and memory circuits with a via.

Abstract translation: 半导体器件具有第一半导体层，其包括第一电路，设置在第一半导体层上并具有第二电路的第二半导体层，以及延伸穿过第一和第二半导体层的部分的通孔，并且第一半导体层和第二电路 电连接。 电路中的一个是逻辑电路，另一个电路是存储器电路。 半导体器件通过在各个衬底上制造逻辑电路和存储器电路的晶体管，堆叠衬底以及将逻辑电路和存储器电路与通孔电连接来制造。

公开(公告)号：US07871722B2

公开(公告)日：2011-01-18

申请号：US11548084

申请日：2006-10-10

Applicant: Youngjoon Shin ,  Min Su Kim ,  Ji Heon Ryu ,  Jeong Hee Choi ,  Seung-Jin Yang

Inventor： Youngjoon Shin ,  Min Su Kim ,  Ji Heon Ryu ,  Jeong Hee Choi ,  Seung-Jin Yang

IPC: H01M6/46 ,  H01M6/26

CPC classification number: H01M10/0413 ,  H01M2/0275 ,  H01M2/0287 ,  H01M2/266 ,  H01M10/0431 ,  H01M10/0525 ,  H01M10/0583 ,  H01M10/4235

Abstract: Disclosed herein are an electrode assembly including a plurality of unit cells folded by a continuous separation film wherein the unit cells are arranged on the separation film such that electrode taps of the unit cells face each other, the separation film has openings corresponding to the electrode taps of the unit cells, and the electrode assembly is manufactured by folding the unit cells in the longitudinal (lengthwise) direction of the separation film while the unit cells are disposed such that the electrode taps of the unit cells are inserted into the corresponding openings, and an electrochemical cell, such as a secondary battery, including the same. The electrode assembly according to the present invention is a hybrid type electrode assembly solving the problems of the jelly-roll type electrode assembly and the stacking type electrode assembly. Consequently, when external impacts are applied to the electrode assembly, for example, the electrode assembly falls, it is possible to minimize the occurrence of internal short circuits and thus to improve the safety of the electrode assembly. Furthermore, it is possible to perform the process for impregnating (wetting) the electrolyte into the electrodes in a short time during the assembly of the electrochemical cell.

Abstract translation: 本文公开了一种电极组件，其包括由连续分离膜折叠的多个单元电池，其中单元电池布置在分离膜上，使得单元电池的电极抽头彼此面对，分离膜具有对应于电极抽头的开口 的单元电池，并且通过在分离膜的纵向（纵向）方向上折叠单元电池而制造电极组件，同时单元电池被布置成使得单元电池的电极抽头插入到相应的开口中，并且 包括其的电化学电池，例如二次电池。 根据本发明的电极组件是解决胶卷型电极组件和堆叠型电极组件的问题的混合型电极组件。 因此，当对电极组件施加外部冲击时，例如电极组件掉落，可以最小化内部短路的发生，从而提高电极组件的安全性。 此外，可以在组装电化学电池期间在短时间内进行浸渍（润湿）电解质到电极中的工艺。

公开(公告)号：US07855410B2

公开(公告)日：2010-12-21

申请号：US12168799

申请日：2008-07-07

Applicant: Seung-Jin Yang ,  Jeong-Uk Han ,  Yong-Suk Choi ,  Hyok-Ki Kwon ,  Bae-Seong Kwon

Inventor： Seung-Jin Yang ,  Jeong-Uk Han ,  Yong-Suk Choi ,  Hyok-Ki Kwon ,  Bae-Seong Kwon

IPC: H01L29/788

CPC classification number: H01L29/7885 ,  H01L21/28273 ,  H01L27/115 ,  H01L27/11521 ,  H01L29/42328

Abstract: According to one embodiment, a semiconductor memory device can be generally characterized as including a gate insulating layer on a semiconductor substrate, a floating gate on the gate insulating layer and a word line disposed on one side of the floating gate. A first side of the floating gate facing the word line may include a projecting portion projecting toward the word line. A tip of the projecting portion may include a corner that extends substantially perpendicularly with respect to a top surface of the semiconductor substrate.

Abstract translation: 根据一个实施例，半导体存储器件的一般特征可以包括在半导体衬底上的栅极绝缘层，栅极绝缘层上的浮动栅极和设置在浮动栅极一侧的字线。 面对字线的浮动栅极的第一侧可以包括朝向字线突出的突出部分。 突出部分的尖端可以包括相对于半导体衬底的顶表面基本垂直地延伸的角部。