公开(公告)号：US09268428B2

公开(公告)日：2016-02-23

申请号：US13465249

申请日：2012-05-07

申请人： Young Kim ,  I-hun Song ,  Sang-hun Jeon ,  Seung-eon Ahn ,  Joon-chul Goh ,  Cheol-gon Lee

发明人： Young Kim ,  I-hun Song ,  Sang-hun Jeon ,  Seung-eon Ahn ,  Joon-chul Goh ,  Cheol-gon Lee

IPC分类号： G06F3/041 ,  G06F3/042

CPC分类号： G06F3/0412 ,  G06F3/042

摘要： A light-sensing apparatus in which a light sensor transistor in a light-sensing pixel is formed of an oxide semiconductor transistor for sensing light, a method of driving the light-sensing apparatus, and an optical touch screen apparatus including the light-sensing apparatus. The light-sensing apparatus includes a light-sensing pixel array having a plurality of light-sensing pixels arranged in rows and columns, and a plurality of gate lines which are arranged in a row direction and respectively provide a gate voltage to the light-sensing pixel. Each of the light-sensing pixels includes a light sensor transistor for sensing light and a switch transistor for outputting a light-sensing signal from the light sensor transistor, and gates of the light sensor transistors of the light-sensing pixels arranged in an arbitrary row are connected to a gate line arranged in a row previous or next to the arbitrary row.

摘要翻译： 一种光感测装置，其中光感测像素中的光传感器晶体管由用于感测光的氧化物半导体晶体管形成，驱动光感测装置的方法以及包括光感测装置的光学触摸屏装置 。 感光装置包括具有排列成行和列的多个感光像素的光感测像素阵列，以及沿行方向排列并分别向光感测提供栅极电压的多条栅极线 像素。 每个感光像素包括用于感测光的光传感器晶体管和用于输出来自光传感器晶体管的光感测信号的开关晶体管，以及布置在任意行中的感光像素的光传感器晶体管的栅极 连接到布置在任意行之前或之后的行中的栅极线。

公开(公告)号：US08896577B2

公开(公告)日：2014-11-25

申请号：US13422384

申请日：2012-03-16

申请人： Seung-eon Ahn ,  I-hun Song ,  Sang-hun Jeon ,  Young Kim

发明人： Seung-eon Ahn ,  I-hun Song ,  Sang-hun Jeon ,  Young Kim

IPC分类号： G06F3/042 ,  G06F3/041

CPC分类号： G06F3/0421 ,  G06F3/0412 ,  G06F3/0416 ,  G06F3/042

摘要： An optical touch screen apparatus in which an oxide semiconductor transistor is used as a light sensing device, and a method of driving the optical touch screen apparatus. The optical touch screen apparatus includes an array including a plurality of light sensing pixels for sensing incident light, a gate driver for providing each of the light sensing pixels with a gate voltage and a reset signal and a signal output unit for receiving a light sensing signal from each of the plurality of light sensing pixels to output a data signal. The gate driver includes a plurality of gate lines that provide a gate voltage to each of the light sensing pixels and at least one reset line that provides a reset signal to each of the light sensing pixels and is electrically connected to the plurality of light sensing pixels.

摘要翻译： 使用氧化物半导体晶体管作为光感测装置的光学触摸屏装置以及驱动光学触摸屏装置的方法。 所述光学触摸屏装置包括：包括用于感测入射光的多个感光像素的阵列;用于为每个所述感光像素提供栅极电压和复位信号的栅极驱动器;以及信号输出单元，用于接收光线感测信号 从多个感光像素中的每一个传输数据信号。 栅极驱动器包括多个栅极线，其向每个光感测像素提供栅极电压，以及至少一个复位线，其向每个光感测像素提供复位信号，并且电连接到多个光感测像素 。

公开(公告)号：US09419610B2

公开(公告)日：2016-08-16

申请号：US12926831

申请日：2010-12-13

申请人： Seung-eon Ahn ,  Sung-ho Park ,  I-hun Song ,  Sang-hun Jeon

发明人： Seung-eon Ahn ,  Sung-ho Park ,  I-hun Song ,  Sang-hun Jeon

IPC分类号： H01L27/146 ,  H01J40/14 ,  H03K17/78 ,  H03K17/94

CPC分类号： H03K17/78 ,  H03K17/941

摘要： Example embodiments are directed to a light-sensing circuit, a method of operating the light-sensing circuit, and a light-sensing apparatus including the light-sensing circuit. The light-sensing circuit includes a light-sensitive oxide semiconductor transistor that senses light; and a switching transistor connected to the light-sensing transistor in series and configured to output data. During a standby time, a low voltage is applied to the switching transistor and a high voltage is applied to the light-sensitive oxide semiconductor transistor, and when data is output, the high voltage is applied to the switching transistor and the low voltage is applied to the light-sensitive oxide semiconductor transistor.

摘要翻译： 示例性实施例涉及光感​​测电路，操作光感测电路的方法以及包括光感测电路的光感测设备。 感光电路包括感测光的光敏氧化物半导体晶体管; 以及串联连接到感光晶体管并被配置为输出数据的开关晶体管。 在待机时间期间，低电压被施加到开关晶体管，并且高电压被施加到光敏氧化物半导体晶体管，并且当数据被输出时，高电压被施加到开关晶体管并施加低电压 到光敏氧化物半导体晶体管。

公开(公告)号：US09209337B2

公开(公告)日：2015-12-08

申请号：US13607019

申请日：2012-09-07

申请人： Sang-hun Jeon ,  I-hun Song ,  Seung-eon Ahn

发明人： Sang-hun Jeon ,  I-hun Song ,  Seung-eon Ahn

IPC分类号： G06F3/042 ,  H01L31/113 ,  H01L31/032 ,  G01J1/42 ,  G01J1/44

CPC分类号： H01L31/1136 ,  G01J1/42 ,  G01J2001/4473 ,  G06F3/0421 ,  G06F2203/04103 ,  H01L31/032

摘要： Photosensing transistors, display panels employing a photosensing transistor, and methods of manufacturing the same, include a gate layer, a gate insulation layer on the gate layer, a channel layer on the gate insulation layer, an etch stop layer on a partial area of the channel layer, a source and a drain on the channel layer and separated from each other with the etch stop layer being interposed between the source and the drain, and a passivation layer covering the source, the drain, and the etch stop layer, wherein the source is separated from the etch stop layer.

摘要翻译： 采用光敏晶体管的感光晶体管，显示面板及其制造方法包括栅极层，栅极层上的栅极绝缘层，栅极绝缘层上的沟道层，位于栅极绝缘层的局部区域上的蚀刻停止层 沟道层，沟道层上的源极和漏极，并且彼此分离，蚀刻停止层插入在源极和漏极之间，以及钝化层，覆盖源极，漏极和蚀刻停止层，其中， 源与蚀刻停止层分离。

公开(公告)号：US20110284722A1

公开(公告)日：2011-11-24

申请号：US12926831

申请日：2010-12-13

申请人： Seung-eon Ahn ,  Sung-ho Park ,  I-hun Song ,  Sang-hun Jeon

发明人： Seung-eon Ahn ,  Sung-ho Park ,  I-hun Song ,  Sang-hun Jeon

IPC分类号： H01L27/146 ,  H01J40/14

CPC分类号： H03K17/78 ,  H03K17/941

摘要： Example embodiments are directed to a light-sensing circuit, a method of operating the light-sensing circuit, and a light-sensing apparatus including the light-sensing circuit. The light-sensing circuit includes a light-sensitive oxide semiconductor transistor that senses light; and a switching transistor connected to the light-sensing transistor in series and configured to output data. During a standby time, a low voltage is applied to the switching transistor and a high voltage is applied to the light-sensitive oxide semiconductor transistor, and when data is output, the high voltage is applied to the switching transistor and the low voltage is applied to the light-sensitive oxide semiconductor transistor.

摘要翻译： 示例性实施例涉及光感​​测电路，操作光感测电路的方法以及包括光感测电路的光感测设备。 感光电路包括感测光的光敏氧化物半导体晶体管; 以及串联连接到感光晶体管并被配置为输出数据的开关晶体管。 在待机时间期间，低电压被施加到开关晶体管，并且高电压被施加到光敏氧化物半导体晶体管，并且当数据被输出时，高电压被施加到开关晶体管并施加低电压 到光敏氧化物半导体晶体管。

公开(公告)号：US08975568B2

公开(公告)日：2015-03-10

申请号：US12805723

申请日：2010-08-17

申请人： Ho-jung Kim ,  U-in Chung ,  Jai-kwang Shin ,  Sun-il Kim ,  I-hun Song ,  Chang-jung Kim ,  Sang-hun Jeon

发明人： Ho-jung Kim ,  U-in Chung ,  Jai-kwang Shin ,  Sun-il Kim ,  I-hun Song ,  Chang-jung Kim ,  Sang-hun Jeon

IPC分类号： H01J27/00 ,  H04N9/04 ,  H04N5/3745 ,  H01L27/146

摘要： Image sensors and methods of operating the same. An image sensor includes a pixel array including a plurality of pixels. Each of the plurality of pixels includes a photo sensor, the voltage-current characteristics of which vary according to energy of incident light, and that generates a sense current determined by the energy of the incident light; a reset unit that is activated to generate a reference current, according to a reset signal for resetting at least one of the plurality of pixels; and a conversion unit that converts the sense current and the reference current into a sense voltage and a reference voltage, respectively.

公开(公告)号：US08698246B2

公开(公告)日：2014-04-15

申请号：US13547200

申请日：2012-07-12

申请人： Sang-hun Jeon ,  Chang-jung Kim ,  I-hun Song

发明人： Sang-hun Jeon ,  Chang-jung Kim ,  I-hun Song

IPC分类号： H01L29/10 ,  H01L29/15 ,  H01L29/80 ,  H01L27/12 ,  H01L23/62 ,  H01L21/00 ,  H01L21/84 ,  H01L21/337

CPC分类号： H01L29/42384 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696

摘要： A high-voltage oxide transistor includes a substrate; a channel layer disposed on the substrate; a gate electrode disposed on the substrate to correspond to the channel layer; a source contacting a first side of the channel layer; and a drain contacting a second side of the channel layer, wherein the channel layer includes a plurality of oxide layers, and none of the plurality of oxide layers include silicon. The gate electrode may be disposed on or under the channel layer. Otherwise, the gate electrodes may be disposed respectively on and under the channel layer.

摘要翻译： 高压氧化物晶体管包括基板; 设置在所述基板上的沟道层; 设置在所述基板上以对应于所述沟道层的栅电极; 源极，与所述沟道层的第一侧接触; 以及与沟道层的第二面接触的漏极，其中所述沟道层包括多个氧化物层，并且所述多个氧化物层中没有一个包括硅。 栅电极可以设置在沟道层上或下面。 否则，栅极电极可以分别设置在沟道层上和下面。

公开(公告)号：US08399882B2

公开(公告)日：2013-03-19

申请号：US12801500

申请日：2010-06-11

申请人： Sang-hun Jeon ,  I-hun Song ,  Chang-jung Kim ,  Sung-ho Park

发明人： Sang-hun Jeon ,  I-hun Song ,  Chang-jung Kim ,  Sung-ho Park

IPC分类号： H01L29/12

CPC分类号： H01L29/7869

摘要： Transistors and methods of manufacturing the same. A transistor may be an oxide thin film transistor (TFT) with a self-aligned top gate structure. The transistor may include a gate insulating layer between a channel region and a gate electrode that extends from two sides of the gate electrode. The gate insulating layer may cover at least a portion of source and drain regions.

摘要翻译： 晶体管及其制造方法。 晶体管可以是具有自对准顶栅结构的氧化物薄膜晶体管（TFT）。 晶体管可以包括从栅电极的两侧延伸的沟道区和栅电极之间的栅极绝缘层。 栅绝缘层可以覆盖源区和漏区的至少一部分。

公开(公告)号：US20130168770A1

公开(公告)日：2013-07-04

申请号：US13547200

申请日：2012-07-12

申请人： Sang-hun Jeon ,  Chang-jung Kim ,  I-hun Song

发明人： Sang-hun Jeon ,  Chang-jung Kim ,  I-hun Song

IPC分类号： H01L29/772 ,  H01L21/336

CPC分类号： H01L29/42384 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696

摘要： A high-voltage oxide transistor includes a substrate; a channel layer disposed on the substrate; a gate electrode disposed on the substrate to correspond to the channel layer; a source contacting a first side of the channel layer; and a drain contacting a second side of the channel layer, wherein the channel layer includes a plurality of oxide layers, and none of the plurality of oxide layers include silicon. The gate electrode may be disposed on or under the channel layer. Otherwise, the gate electrodes may be disposed respectively on and under the channel layer.

摘要翻译： 高压氧化物晶体管包括基板; 设置在所述基板上的沟道层; 设置在所述基板上以对应于所述沟道层的栅电极; 源极，与所述沟道层的第一侧接触; 以及与沟道层的第二面接触的漏极，其中所述沟道层包括多个氧化物层，并且所述多个氧化物层中没有一个包括硅。 栅电极可以设置在沟道层上或下面。 否则，栅极电极可以分别设置在沟道层上和下面。

公开(公告)号：US20110156020A1

公开(公告)日：2011-06-30

申请号：US12801501

申请日：2010-06-11

申请人： Sang-hun Jeon ,  I-hun Song ,  Chang-jung Kim ,  Sung-ho Park

发明人： Sang-hun Jeon ,  I-hun Song ,  Chang-jung Kim ,  Sung-ho Park

IPC分类号： H01L29/786

CPC分类号： G11C13/0007 ,  G11C13/003 ,  G11C2013/0073 ,  G11C2213/31 ,  G11C2213/32 ,  G11C2213/72 ,  G11C2213/73 ,  G11C2213/74 ,  G11C2213/76 ,  H01L27/2409 ,  H01L27/2481 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/147

摘要： Provided is a transistor including a semiconductor insertion layer between a channel layer and a source electrode. A potential barrier between the channel layer and the source electrode may be increased by the semiconductor insertion layer. The channel layer may be an oxide semiconductor layer. The transistor may be an enhancement mode transistor.

摘要翻译： 提供了一种晶体管，其包括在沟道层和源极之间的半导体插入层。 可以通过半导体插入层增加沟道层和源电极之间的势垒。 沟道层可以是氧化物半导体层。 晶体管可以是增强型晶体管。