公开(公告)号：US07130112B2

公开(公告)日：2006-10-31

申请号：US10959507

申请日：2004-10-07

申请人： Ken Morito

发明人： Ken Morito

IPC分类号： H01S3/00

CPC分类号： H01S5/50 ,  H01S5/026 ,  H01S5/1032 ,  H01S5/227 ,  H01S5/4031 ,  H01S5/5063 ,  H01S5/5072

摘要： The optical amplifying device comprises a DFB laser 22 formed on an n type InP substrate 10, for outputting control light; a symmetrical Mach-Zehnder interferometer 12 formed on the n type InP substrate 10 and including 3 dB optical couplers 14, 16 having 2 input ports and 2 output ports, and optical waveguides 24a, 24b which optically interconnect the output port of the 3 dB optical coupler 14 and the input port of the 3 dB optical coupler 16; and SOAs 24a, 24b respectively formed in the optical waveguides 24a, 24b.

摘要翻译： 光放大装置包括：形成在n型InP基板10上的DFB激光器22，用于输出控制光; 形成在n型InP衬底10上并且包括具有2个输入端口和2个输出端口的3dB光耦合器14,16的对称马赫 - 曾德干涉仪12以及光学互连3输出端口的光波导24a，24b dB光耦合器14和3dB光耦合器16的输入端口; 以及分别形成在光波导管24a，24b中的SOA 24a，24b。

公开(公告)号：US20050094680A1

公开(公告)日：2005-05-05

申请号：US10810601

申请日：2004-03-29

申请人： Kazumasa Takabayashi ,  Ken Morito ,  Yuji Kotaki

发明人： Kazumasa Takabayashi ,  Ken Morito ,  Yuji Kotaki

IPC分类号： H01S5/0625 ,  H01S5/068 ,  H01S5/0687 ,  H01S5/14 ,  H01S3/10

CPC分类号： H01S5/0687 ,  H01S5/06255 ,  H01S5/06808 ,  H01S5/141

摘要： There is provided a phase control portion for controlling phase of a laser beam resonated in a resonator based on detected results by two optical detectors. The phase control portion adjusts the longitudinal mode positions by a feedback control so that a ratio of intensities detected by the two optical detectors comes to a predetermined reference value. To one of the optical detectors, part of a laser beam outputted from the resonator is irradiated as it is, whereas, to the other one of the optical detectors, part of the laser beam outputted from the resonator is irradiated after passing through an etalon. An FSR of the etalon is a double of that of another etalon in the resonator.

摘要翻译： 提供了一种相位控制部分，用于基于两个光学检测器的检测结果来控制谐振器中谐振的激光束的相位。 相位控制部分通过反馈控制来调节纵向模式位置，使得由两个光学检测器检测到的强度比达到预定的参考值。 对于光检测器中的一个，从谐振器输出的激光束的一部分照原样照射，而对另一个光检测器，从谐振器输出的激光束的一部分在通过标准具之后被照射。 标准具的FSR是谐振器中另一个标准具的FSR的两倍。

公开(公告)号：US07633984B2

公开(公告)日：2009-12-15

申请号：US11250434

申请日：2005-10-17

申请人： Akinori Hayakawa ,  Ken Morito

发明人： Akinori Hayakawa ,  Ken Morito

IPC分类号： H01S5/00

CPC分类号： H01S5/06256 ,  H01S5/026 ,  H01S5/0425 ,  H01S5/0602 ,  H01S5/06206 ,  H01S5/06258 ,  H01S5/4031 ,  H01S5/50

摘要： Objects are achieved by an optical semiconductor device comprising: a structure 61 including a substrate 50, a diffraction grating 52a, an active layer 54 and a refractive index control layer 60; and an laser element 100 including an electrode 92a for the active layer, an electrode 92b for the refractive index control layer and an electrode 92c for switching, wherein a pre-bias current is previously supplied from the electrode 92a for the active layer to the active layer 54 in a state where a switching current is not supplied from the electrode 92c for switching to the active layer 54, and then while a current Idrive for activation is supplied from the electrode 92a for the active layer to the active layer 54, the laser element 100 is turned on by supplying the switching current Isw from the electrode 92c for switching to a part of the active layer 54, as well as turning off the laser element 100 by halting the supply of the switching current Isw.

摘要翻译： 目标通过光学半导体器件实现，包括：包括衬底50，衍射光栅52a，有源层54和折射率控制层60的结构61; 以及激光元件100，其包括用于有源层的电极92a，用于折射率控制层的电极92b和用于切换的电极92c，其中预先从用于有源层的电极92a向活性层提供预偏置电流 在没有从用于切换到有源层54的电极92c提供开关电流的状态下，然后当从用于有源层的电极92a向活性层54提供用于激活的电流Idrive时，激光器 通过从用于切换的电极92c向有源层54的一部分提供开关电流Isw来接通元件100，并且通过停止切换电流Isw的供应来关闭激光元件100。

公开(公告)号：US07539378B2

公开(公告)日：2009-05-26

申请号：US11826592

申请日：2007-07-17

申请人： Kazumasa Takabayashi ,  Ken Morito

发明人： Kazumasa Takabayashi ,  Ken Morito

IPC分类号： G02B6/42 ,  G02B6/26

CPC分类号： G02F1/025 ,  B82Y20/00 ,  G02B6/14 ,  G02B6/2813 ,  G02B2006/12152 ,  G02F1/01708 ,  G02F2001/217 ,  H01S5/026 ,  H01S5/0265 ,  H01S5/028 ,  H01S5/06206 ,  H01S5/101 ,  H01S5/1014 ,  H01S5/12 ,  H01S5/20 ,  H01S5/50

摘要： In order to make it possible to suppress the influence of reflected light on a connection interface easily and with certainty, an optical waveguide device includes a first optical waveguide (1), a second optical waveguide (2) formed from a material or in a structure different from that of the first optical waveguide (1) and connected to the first optical waveguide (1), and a 1×1 multimode interference waveguide (3) formed by increasing the widths of the first optical waveguide (1) and the second optical waveguide (2) in the proximity of a connection interface between the first optical waveguide (1) and the second optical waveguide (2).

摘要翻译： 为了能够容易地且可靠地抑制反射光对连接界面的影响，光波导装置包括第一光波导（1），由材料或结构形成的第二光波导（2） 与第一光波导（1）的不同，并且连接到第一光波导（1），以及通过增加第一光波导（1）和第二光波导（1）的宽度形成的1x1多模干涉波导（3） 2）在第一光波导（1）和第二光波导（2）之间的连接接口附近。

公开(公告)号：US07130322B2

公开(公告)日：2006-10-31

申请号：US10810601

申请日：2004-03-29

申请人： Kazumasa Takabayashi ,  Ken Morito ,  Yuji Kotaki

发明人： Kazumasa Takabayashi ,  Ken Morito ,  Yuji Kotaki

IPC分类号： H01S3/13 ,  H01S3/10 ,  H01S3/00

CPC分类号： H01S5/0687 ,  H01S5/06255 ,  H01S5/06808 ,  H01S5/141

摘要： There is provided a phase control portion for controlling phase of a laser beam resonated in a resonator based on detected results by two optical detectors. The phase control portion adjusts the longitudinal mode positions by a feedback control so that a ratio of intensities detected by the two optical detectors comes to a predetermined reference value. To one of the optical detectors, part of a laser beam outputted from the resonator is irradiated as it is, whereas, to the other one of the optical detectors, part of the laser beam outputted from the resonator is irradiated after passing through an etalon. An FSR of the etalon is a double of that of another etalon in the resonator.

摘要翻译： 提供了一种相位控制部分，用于基于两个光学检测器的检测结果来控制谐振器中谐振的激光束的相位。 相位控制部分通过反馈控制来调节纵向模式位置，使得由两个光学检测器检测到的强度比达到预定的参考值。 对于光检测器中的一个，从谐振器输出的激光束的一部分照原样照射，而对另一个光检测器，从谐振器输出的激光束的一部分在通过标准具之后被照射。 标准具的FSR是谐振器中另一个标准具的FSR的两倍。

公开(公告)号：US20060222033A1

公开(公告)日：2006-10-05

申请号：US11250434

申请日：2005-10-17

申请人： Akinori Hayakawa ,  Ken Morito

发明人： Akinori Hayakawa ,  Ken Morito

IPC分类号： H01S5/00

CPC分类号： H01S5/06256 ,  H01S5/026 ,  H01S5/0425 ,  H01S5/0602 ,  H01S5/06206 ,  H01S5/06258 ,  H01S5/4031 ,  H01S5/50

摘要： Objects are achieved by an optical semiconductor device comprising: a structure 61 including a substrate 50, a diffraction grating 52a, an active layer 54 and a refractive index control layer 60; and an laser element 100 including an electrode 92a for the active layer, an electrode 92b for the refractive index control layer and an electrode 92c for switching, wherein a pre-bias current is previously supplied from the electrode 92a for the active layer to the active layer 54 in a state where a switching current is not supplied from the electrode 92c for switching to the active layer 54, and then while a current Idrive for activation is supplied from the electrode 92a for the active layer to the active layer 54, the laser element 100 is turned on by supplying the switching current Isw from the electrode 92c for switching to a part of the active layer 54, as well as turning off the laser element 100 by halting the supply of the switching current Isw.

摘要翻译： 物体通过光学半导体器件实现，包括：包括基底50，衍射光栅52a，有源层54和折射率控制层60的结构61; 以及激光元件100，其包括用于有源层的电极92a，用于折射率控制层的电极92b和用于切换的电极92c，其中预先从电极92a向活性物质供应预偏置电流 在没有从电极92c提供开关电流以切换到有源层54的状态下，然后当从电极提供用于激活的电流I驱动<！ - SIPO

公开(公告)号：US06545801B2

公开(公告)日：2003-04-08

申请号：US09960400

申请日：2001-09-24

申请人： Ken Morito

发明人： Ken Morito

IPC分类号： H01S325

CPC分类号： H01S5/5009 ,  H01S5/1014 ,  H01S5/1064 ,  H01S5/1085 ,  H01S5/4043

摘要： A semiconductor optical amplifier includes a plurality of active layers of bulk crystal with at least one intervening spacer for optical amplification, wherein each of the active layers accumulates a tensile strain therein.

公开(公告)号：US07829880B2

公开(公告)日：2010-11-09

申请号：US12047806

申请日：2008-03-13

申请人： Hiroji Ebe ,  Kenichi Kawaguchi ,  Ken Morito ,  Yasuhiko Arakawa

发明人： Hiroji Ebe ,  Kenichi Kawaguchi ,  Ken Morito ,  Yasuhiko Arakawa

IPC分类号： H01L29/06 ,  H01L31/00

CPC分类号： H01S5/341 ,  B82Y20/00 ,  H01S5/3086 ,  H01S5/309 ,  H01S5/3412 ,  H01S5/5009 ,  H01S2301/04 ,  Y10S438/962

摘要： A quantum dot semiconductor device includes an active layer having a plurality of quantum dot layers each including a composite quantum dot formed by stacking a plurality of quantum dots and a side barrier layer formed in contact with a side face of the composite quantum dot. The stack number of the quantum dots and the magnitude of strain of the side barrier layer from which each of the quantum dot layers is formed are set so that a gain spectrum of the active layer has a flat gain bandwidth corresponding to a shift amount of the gain spectrum within a desired operation temperature range.

摘要翻译： 量子点半导体器件包括具有多个量子点层的有源层，每个量子点层包括通过堆叠多个量子点形成的复合量子点和与复合量子点的侧面接触形成的侧面阻挡层。 每个量子点层形成的量子点的堆叠数量和侧面阻挡层的应变幅度被设定为使得有源层的增益谱具有对应于 增益谱在所需的工作温度范围内。

公开(公告)号：US20100061414A1

公开(公告)日：2010-03-11

申请号：US12617637

申请日：2009-11-12

申请人： Akinori Hayakawa ,  Ken Morito

发明人： Akinori Hayakawa ,  Ken Morito

IPC分类号： H01S3/00

CPC分类号： H01S5/06256 ,  H01S5/026 ,  H01S5/0425 ,  H01S5/0602 ,  H01S5/06206 ,  H01S5/06258 ,  H01S5/4031 ,  H01S5/50

摘要： Objects are achieved by an optical semiconductor device comprising: a structure 61 including a substrate 50, a diffraction grating 52a, an active layer 54 and a refractive index control layer 60; and an laser element 100 including an electrode 92a for the active layer, an electrode 92b for the refractive index control layer and an electrode 92c for switching, wherein a pre-bias current is previously supplied from the electrode 92a for the active layer to the active layer 54 in a state where a switching current is not supplied from the electrode 92c for switching to the active layer 54, and then while a current Idrive for activation is supplied from the electrode 92a for the active layer to the active layer 54, the laser element 100 is turned on by supplying the switching current Isw from the electrode 92c for switching to a part of the active layer 54, as well as turning off the laser element 100 by halting the supply of the switching current Isw.

摘要翻译： 目标通过光学半导体器件实现，包括：包括衬底50，衍射光栅52a，有源层54和折射率控制层60的结构61; 以及激光元件100，其包括用于有源层的电极92a，用于折射率控制层的电极92b和用于切换的电极92c，其中预先从用于有源层的电极92a向活性层提供预偏置电流 在没有从用于切换到有源层54的电极92c提供开关电流的状态下，然后当从用于有源层的电极92a向活性层54提供用于激活的电流Idrive时，激光器 通过从用于切换的电极92c向有源层54的一部分提供开关电流Isw来接通元件100，并且通过停止切换电流Isw的供应来关闭激光元件100。

公开(公告)号：US06487008B2

公开(公告)日：2002-11-26

申请号：US09976037

申请日：2001-10-15

申请人： Ken Morito

发明人： Ken Morito

IPC分类号： H01S300

CPC分类号： H01S5/50 ,  H01S5/0608

摘要： A light amplifying device, which employs a SOA, has been disclosed, wherein, the gain of the SOA is adjusted by the injection of light into the semiconductor optical amplifier. The signal light and the CW control light are combined, entered into the SOA, and the control light is removed from the light output from the SOA by the filter, the amplified signal light is divided by the divider, and the power of one of the divided lights is detected. The control unit changes the power of the control light in accordance with the detected power. The gain is adjusted by changing the power of the control light. In this structure, the density of the carrier in the active layer is reduced by increasing the power of the control light in order to decrease the gain, but the saturation light output power of the SOA is increased because the carrier life is reduced.

摘要翻译： 已经公开了采用SOA的光放大装置，其中通过将光注入到半导体光放大器中来调节SOA的增益。 信号灯和CW控制灯被组合，输入到SOA中，并且通过滤波器将控制光从SOA的光输出中去除，放大的信号光被分频器分压，并且其中的一个的功率 检测到分光。 控制单元根据检测到的功率改变控制光的功率。 通过改变控制灯的功率来调节增益。 在该结构中，通过增加控制光的功率来降低有源层中的载流子的密度，以便降低增益，但由于载流子寿命的降低，SOA的饱和光输出功率增加。