公开(公告)号：US07508849B2

公开(公告)日：2009-03-24

申请号：US11020241

申请日：2004-12-27

申请人： Shinsuke Tanaka ,  Ken Morito

发明人： Shinsuke Tanaka ,  Ken Morito

IPC分类号： H01S3/10 ,  H01S3/13 ,  H01S3/00 ,  H01S3/04

CPC分类号： H01S5/141 ,  G02B5/284 ,  H01S3/1068 ,  H01S5/0612 ,  H01S5/0687 ,  H01S5/1071 ,  H01S5/142

摘要： A semiconductor optical amplifier, an acousto-optic tunable filter, a phase shifter, a lens, and an internal etalon are arranged in a resonator. Outside the resonator, two lenses, two beam splitters, two photo-detectors, and an external etalon are arranged. The internal etalon is a quartz etalon and the external etalon is a crystal etalon. Therefore, the rate of change in transmission peak wavelength of the internal etalon to a temperature change is greater than that of the external etalon.

摘要翻译： 谐振器中布置有半导体光放大器，声光可调滤波器，移相器，透镜和内标准器。 在谐振器外部，布置了两个透镜，两个分束器，两个光电检测器和外部标准具。 内部标准具是石英标准具，外部标准具是一种水晶标准具。 因此，内部标准具的透射峰值波长与温度变化的变化率大于外部标准具的变化率。

公开(公告)号：US20080199128A1

公开(公告)日：2008-08-21

申请号：US12071007

申请日：2008-02-14

申请人： Shinsuke Tanaka ,  Ken Morito

发明人： Shinsuke Tanaka ,  Ken Morito

IPC分类号： G02B6/12

CPC分类号： G02B6/125 ,  G02B6/2821

摘要： Aiming at realizing a semiconductor integrated optical element comprising a single semiconductor substrate, and first and second optical waveguides differed in the equivalent refractive index from each other on the semiconductor substrate, allowing light signal to propagate from the first optical waveguide to the second optical waveguide, in which the first and second optical waveguides are provided side-by-side on the semiconductor substrate to form a directional coupler allowing optical coupling between the first and second optical waveguides, and a first-guiding-mode optical signal in the first optical waveguide is output after being converted into a second-guiding-mode optical signal in second optical waveguide, which makes possible to suppress generation of reflection loss and emission loss in optical coupling, and obtain extremely desirable optical coupling characteristics, without causing reflection of optical signal, between different types of optical waveguides differed from each other in the equivalent refractive index.

摘要翻译： 为了实现包括单个半导体衬底和第一和第二光波导的半导体集成光学元件在半导体衬底上的等效折射率彼此不同，允许光信号从第一光波导传播到第二光波导， 其中所述第一和第二光波导在所述半导体衬底上并排设置以形成允许所述第一和第二光波导之间的光耦合的定向耦合器，并且所述第一光波导中的第一引导模式光信号是 在第二光波导中被转换为第二引导模式光信号之后，输出可以抑制光耦合中的反射损耗和发射损耗的产生，并且获得非常期望的光耦合特性，而不引起光信号的反射 不同类型的光波导与e不同 ach其他在等效折射率。

公开(公告)号：US07112827B2

公开(公告)日：2006-09-26

申请号：US10690469

申请日：2003-10-22

申请人： Akinori Hayakawa ,  Yoshihiro Sato ,  Ken Morito ,  Norihiko Sekine

发明人： Akinori Hayakawa ,  Yoshihiro Sato ,  Ken Morito ,  Norihiko Sekine

IPC分类号： H01L29/74 ,  H01L31/111 ,  H01S3/10 ,  H01S3/17

CPC分类号： H01S5/0607 ,  H01S5/026 ,  H01S5/0265 ,  H01S5/028 ,  H01S5/042 ,  H01S5/0425 ,  H01S5/06206 ,  H01S5/06258 ,  H01S5/1014 ,  H01S5/2206 ,  H01S5/227 ,  H01S5/32333 ,  H01S5/4012 ,  H01S5/4087 ,  H01S2301/173

摘要： A light oscillation part including an active layer for generating light by current injection, a tuning layer with an intermediate layer formed between the active layer and the tuning layer, for varying an oscillation wavelength by current injection and a diffraction grating formed near the active layer and the tuning layer, and a light amplification part including an active layer for amplifying light by current injection are formed on a semiconductor substrate. Light oscillation elements having wide wavelength variation ranges and the light amplification are integrated on a semiconductor substrate, whereby wide wavelength variation ranges can be obtained and the output light can be much increased.

摘要翻译： 一种光振荡部分，包括通过电流注入产生光的有源层，在有源层和调谐层之间形成中间层的调谐层，用于通过电流注入改变振荡波长，以及在有源层附近形成衍射光栅; 调谐层和包括用于通过电流注入来放大光的有源层的光放大部分形成在半导体衬底上。 具有宽波长变化范围的光振荡元件和光放大集成在半导体衬底上，由此可以获得宽的波长变化范围，并且输出光可以大大增加。

公开(公告)号：US06487007B1

公开(公告)日：2002-11-26

申请号：US09585323

申请日：2000-06-02

申请人： Ken Morito

发明人： Ken Morito

IPC分类号： H01S325

CPC分类号： H01S5/5009 ,  H01S5/028 ,  H01S5/1014 ,  H01S5/1085 ,  H01S5/3201

摘要： A polarization independent-type semiconductor optical amplifier comprises: a strained bulk active layer having a 20 nm to 90 nm-thick and having a tensile strain of a −0.10% to −0.60% strain amount; clad layers provided, sandwiching the strained bulk active layer; and a resonance suppressing means for suppressing resonance of light due to reflection on a light incident end face and a light exit end face of the strained bulk active layer, incident signal light entering at the light incident end face being amplified and exiting at the light exit end face, and an individual transmission gain of the exit signal light being substantially constant independent of a polarization state of the incident signal light. Whereby drastically increased fiber out saturation powers can be obtained with polarization independence retained.

摘要翻译： 偏振无关型半导体光放大器包括：具有20nm至90nm厚并且具有-0.10％至-0.60％应变量的拉伸应变的应变体活性层; 提供包覆层，夹持应变体活性层; 以及谐振抑制装置，用于抑制由于在受光体积活性层的光入射端面和光出射端面上的反射引起的光的共振，入射在光入射端面的入射信号光在光出射处被放大和离开 端面，并且出射信号光的单独透射增益基本上恒定，而与入射信号光的偏振状态无关。 由此可以在保持极化独立性的情况下获得明显增加的光纤饱和功率。

公开(公告)号：US08073033B2

公开(公告)日：2011-12-06

申请号：US12617637

申请日：2009-11-12

申请人： Akinori Hayakawa ,  Ken Morito

发明人： Akinori Hayakawa ,  Ken Morito

IPC分类号： H01S5/00

CPC分类号： H01S5/06256 ,  H01S5/026 ,  H01S5/0425 ,  H01S5/0602 ,  H01S5/06206 ,  H01S5/06258 ,  H01S5/4031 ,  H01S5/50

摘要： Objects are achieved by an optical semiconductor device comprising: a structure 61 including a substrate 50, a diffraction grating 52a, an active layer 54 and a refractive index control layer 60; and an laser element 100 including an electrode 92a for the active layer, an electrode 92b for the refractive index control layer and an electrode 92c for switching, wherein a pre-bias current is previously supplied from the electrode 92a for the active layer to the active layer 54 in a state where a switching current is not supplied from the electrode 92c for switching to the active layer 54, and then while a current Idrive for activation is supplied from the electrode 92a for the active layer to the active layer 54, the laser element 100 is turned on by supplying the switching current Isw from the electrode 92c for switching to a part of the active layer 54, as well as turning off the laser element 100 by halting the supply of the switching current Isw.

摘要翻译： 目标通过光学半导体器件实现，包括：包括衬底50，衍射光栅52a，有源层54和折射率控制层60的结构61; 以及激光元件100，其包括用于有源层的电极92a，用于折射率控制层的电极92b和用于切换的电极92c，其中预先从用于有源层的电极92a向活性层提供预偏置电流 在没有从用于切换到有源层54的电极92c提供开关电流的状态下，然后当从用于有源层的电极92a向活性层54提供用于激活的电流Idrive时，激光器 通过从用于切换的电极92c向有源层54的一部分提供开关电流Isw来接通元件100，并且通过停止切换电流Isw的供应来关闭激光元件100。

公开(公告)号：US07859746B2

公开(公告)日：2010-12-28

申请号：US12191418

申请日：2008-08-14

申请人： Ken Morito ,  Susumu Yamazaki ,  Shinsuke Tanaka

发明人： Ken Morito ,  Susumu Yamazaki ,  Shinsuke Tanaka

IPC分类号： H01S5/343

CPC分类号： H01S5/1082 ,  H01S5/1014 ,  H01S5/1085 ,  H01S5/32366 ,  H01S5/50 ,  H01S5/5009 ,  H01S2301/02

摘要： A polarization-independent SOA is provided which uses an InP substrate (11) as a semiconductor substrate and uses GaInNAs having introduced tensile strain as an active layer (14). With this configuration, the polarization independence is achieved by introducing the tensile strain, and high saturation optical output power is realized by reducing the film thickness of the active layer (14) as well as the gain peak wavelength is increased by reducing the band gap of the active layer (14) through use of GaInNAs made by adding nitrogen (N) to GaInAs as a material of the active layer (14) so as to achieve high gain especially in C-band and L-band even when band filling exits at the time of injecting a high current into the active layer (14).

摘要翻译： 提供了使用InP衬底（11）作为半导体衬底并且使用具有引入的拉伸应变的GaInNA作为有源层（14）的偏振无关的SOA。 通过这种结构，通过引入拉伸应变来实现极化独立性，并且通过降低有源层（14）的膜厚度来实现高饱和光输出功率，并且通过降低有源层（14）的带隙来增加增益峰值波长 通过使用通过将氮（N）添加到GaInAs作为有源层（14）的材料而制成的GaInNA，以便即使在带填充离开时也实现高增益，特别是在C带和L带中，有源层（14） 将高电流注入有源层（14）的时间。

公开(公告)号：US20050063042A1

公开(公告)日：2005-03-24

申请号：US10959507

申请日：2004-10-07

申请人： Ken Morito

发明人： Ken Morito

IPC分类号： H01S3/063 ,  H01S5/026 ,  H01S5/10 ,  H01S5/227 ,  H01S5/40 ,  H01S5/50 ,  H01S3/00

CPC分类号： H01S5/50 ,  H01S5/026 ,  H01S5/1032 ,  H01S5/227 ,  H01S5/4031 ,  H01S5/5063 ,  H01S5/5072

摘要： The optical amplifying device comprises a DFB laser 22 formed on an n type InP substrate 10, for outputting control light; a symmetrical Mach-Zehnder interferometer 12 formed on the n type InP substrate 10 and including 3 dB optical couplers 14, 16 having 2 input ports and 2 output ports, and optical waveguides 24a, 24b which optically interconnect the output port of the 3 dB optical coupler 14 and the input port of the 3 dB optical coupler 16; and SOAs 24a, 24b respectively formed in the optical waveguides 24a, 24b.

摘要翻译： 光放大装置包括：形成在n型InP基板10上的DFB激光器22，用于输出控制光; 形成在n型InP衬底10上并且包括具有2个输入端口和2个输出端口的3dB光耦合器14,16的对称的Mach-Zehnder干涉仪12以及将3dB光学器件的输出端口光学地互连的光波导24a，24b 耦合器14和3dB光耦合器16的输入端口; 以及分别形成在光波导24a，24b中的SOA 24a，24b。

公开(公告)号：US06847662B2

公开(公告)日：2005-01-25

申请号：US10352044

申请日：2003-01-28

申请人： Martin Bouda ,  Ken Morito ,  Kazumasa Takabayashi ,  Tadao Nakazawa ,  Naoki Hashimoto ,  Hiroshi Onaka ,  Yuji Kotaki

发明人： Martin Bouda ,  Ken Morito ,  Kazumasa Takabayashi ,  Tadao Nakazawa ,  Naoki Hashimoto ,  Hiroshi Onaka ,  Yuji Kotaki

IPC分类号： H01S3/106 ,  H01S5/062 ,  H01S5/14 ,  H01S3/10

CPC分类号： H01S5/141 ,  H01S3/0632 ,  H01S3/082 ,  H01S3/1068 ,  H01S5/06226 ,  H01S5/101 ,  H01S5/1085 ,  H01S5/142

摘要： A wavelength-selectable laser with a resonance region formed by two reflecting surfaces include a gain medium generating a laser beam, a first filter, and a second filter. The first filter has a first controllable transmission region and transmits a first predetermined wavelength region of the laser beam generated in the gain medium, the first predetermined wavelength region matching the first controllable transmission region. The second filter has a plurality of periodically arranged second transmission regions and transmits a second predetermined wavelength region of the laser beam transmitted by the first filter, the second predetermined wavelength region matching one of the second transmission regions.

摘要翻译： 具有由两个反射表面形成的谐振区域的波长可选择激光器包括产生激光束，第一滤光器和第二滤光器的增益介质。 第一滤波器具有第一可控传输区域，并且透射在增益介质中产生的激光束的第一预定波长区域，第一预定波长区域与第一可控传输区域匹配。 第二滤光器具有多个周期性排列的第二透射区域，并且透射由第一滤光器透射的激光束的第二预定波长区域，第二预定波长区域与第二透射区域中的一个匹配。

公开(公告)号：US07542201B2

公开(公告)日：2009-06-02

申请号：US11360660

申请日：2006-02-24

申请人： Shinsuke Tanaka ,  Ken Morito

发明人： Shinsuke Tanaka ,  Ken Morito

IPC分类号： H01S5/00 ,  H01S5/343

CPC分类号： H01S5/34313 ,  B82Y20/00 ,  H01S5/026 ,  H01S5/2222 ,  H01S5/2224 ,  H01S5/2275 ,  H01S5/3201 ,  H01S5/34366 ,  H01S5/34386 ,  H01S5/5009 ,  H01S5/509 ,  H01S2301/14

摘要： A semiconductor optical amplification device is disclosed that has a gain spectrum of a wide bandwidth. The semiconductor optical amplification device includes an InP substrate and an active layer on the InP substrate. The active layer has a quantum well structure formed by alternately stacking a barrier layer and a well layer, the barrier layer is formed from a tensile-strained InGaAs film, and the well layer is formed from a compressively-strained InGaAs film.

摘要翻译： 公开了一种具有宽带宽增益谱的半导体光放大装置。 半导体光放大装置包括InP衬底和InP衬底上的有源层。 活性层具有通过交替层叠阻挡层和阱层而形成的量子阱结构，阻挡层由拉伸应变InGaAs膜形成，阱层由压缩应变的InGaAs膜形成。

公开(公告)号：US20070258681A1

公开(公告)日：2007-11-08

申请号：US11826592

申请日：2007-07-17

申请人： Kazumasa Takabayashi ,  Ken Morito

发明人： Kazumasa Takabayashi ,  Ken Morito

IPC分类号： G02B6/26

CPC分类号： G02F1/025 ,  B82Y20/00 ,  G02B6/14 ,  G02B6/2813 ,  G02B2006/12152 ,  G02F1/01708 ,  G02F2001/217 ,  H01S5/026 ,  H01S5/0265 ,  H01S5/028 ,  H01S5/06206 ,  H01S5/101 ,  H01S5/1014 ,  H01S5/12 ,  H01S5/20 ,  H01S5/50

摘要： In order to make it possible to suppress the influence of reflected light on a connection interface easily and with certainty, an optical waveguide device includes a first optical waveguide (1), a second optical waveguide (2) formed from a material or in a structure different from that of the first optical waveguide (1) and connected to the first optical waveguide (1), and a 1×1 multimode interference waveguide (3) formed by increasing the widths of the first optical waveguide (1) and the second optical waveguide (2) in the proximity of a connection interface between the first optical waveguide (1) and the second optical waveguide (2).

摘要翻译： 为了能够容易地且可靠地抑制反射光对连接界面的影响，光波导装置包括第一光波导（1），由材料或结构形成的第二光波导（2） 与第一光波导（1）的不同，并且连接到第一光波导（1），以及通过增加第一光波导（1）和第二光波导（1）的宽度形成的1x1多模干涉波导（3） 2）在第一光波导（1）和第二光波导（2）之间的连接接口附近。