公开(公告)号：US09536715B2

公开(公告)日：2017-01-03

申请号：US14234699

申请日：2012-09-14

Applicant: Shiro Tsukamoto

Inventor： Shiro Tsukamoto

IPC: C23C14/00 ,  H01J37/34 ,  C23C14/34 ,  C23C14/56 ,  H01J37/32

CPC classification number: H01J37/3476 ,  C23C14/34 ,  C23C14/564 ,  H01J37/32853 ,  H01J37/3288 ,  H01J37/34 ,  H01J37/3447 ,  Y10T29/49748

Abstract: The present invention relates to a method for recycling a tantalum coil for sputtering that is disposed between a substrate and a sputtering target. The method for recycling a tantalum coil for sputtering is characterized in that the whole or partial surface of a spent tantalum coil is subject to cutting (cutting is performed until a re-deposited film and knurling traces are eliminated) so as to eliminate the re-deposited film that was formed during sputtering, and knurling is newly performed to the cut portion. While sputtered grains are accumulated (re-deposited) on the surface of the tantalum coil disposed between the substrate and the sputtering target during sputtering, by eliminating the sputtered grains accumulated on the spent coil by way of cutting after the sputtering is complete, the tantalum coil can be efficiently recycled. Thus, provided is technology capable of lean manufacturing of new coils, improving productivity, and stably providing such coils.

Abstract translation: 本发明涉及设置在基板和溅射靶之间的用于再循环用于溅射的钽线圈的方法。 用于再循环用于溅射的钽线圈的方法的特征在于，废钽线圈的整个或部分表面被切割（进行切割直到重新淀积的膜和滚花痕迹被消除），以便消除重新 在溅射期间形成的沉积膜，并且对切割部分新进行滚花。 当在溅射期间溅射的晶粒在设置在衬底和溅射靶之间的钽线圈的表面上积累（重新沉积）时，通过在溅射完成之后通过切割消除积聚在废线圈上的溅射晶粒，钽 线圈可以有效回收。 因此，提供了能够精密制造新线圈的技术，提高生产率并稳定地提供这种线圈。

公开(公告)号：US20130220805A1

公开(公告)日：2013-08-29

申请号：US13881510

申请日：2011-10-25

Applicant: Shiro Tsukamoto ,  Kazumasa Ohashi

Inventor： Shiro Tsukamoto ,  Kazumasa Ohashi

IPC: C23C14/34 ,  B23K1/20

CPC classification number: C23C14/34 ,  B23K1/20 ,  C23C14/3407 ,  H01J37/3426 ,  H01J37/3435

Abstract: Provided is a sputtering target-backing plate assembly wherein a Cu—Cr alloy backing plate is bonded to a Ti target via a layer of a strain absorbing material placed at an interface between the Ti target and the Cu—Cr alloy backing plate. In particular, the present invention relates to a sputtering target-backing plate assembly and a production method thereof, the assembly being capable of absorbing strain at the interface between the target and the backing plate in order to prevent deformation (displacement) during sputtering. An object of the present invention is to solve a problem inherent to Titanium (Ti) and a problem in selecting a backing plate compatible with it.

Abstract translation: 提供了一种溅射靶 - 背板组件，其中通过位于Ti靶和Cu-Cr合金背板之间的界面处的应变吸收材料层将Cu-Cr合金背板结合到Ti靶上。 特别地，本发明涉及一种溅射靶 - 背板组件及其制造方法，该组件能够在靶材和背板之间的界面处吸收应变，以防止溅射期间的变形（位移）。 本发明的目的是解决钛（Ti）固有的问题以及选择与其兼容的背板的问题。

公开(公告)号：US20120318668A1

公开(公告)日：2012-12-20

申请号：US13581843

申请日：2011-03-14

Applicant: Shiro Tsukamoto

Inventor： Shiro Tsukamoto

IPC: C23C14/34 ,  B23P9/02

CPC classification number: C23C14/564 ,  C23C14/34 ,  C23C14/3471 ,  H01J37/34 ,  H01J37/3447

Abstract: Provided is a tantalum coil for sputtering disposed between a substrate and a sputtering target, wherein the tantalum coil has irregularities so that the surface roughness Rz of the tantalum coil is 150 μm or more and the number of threads is 15 to 30 TPI (Threads per inch) in a transverse direction and 10 to 30 TPI in a vertical direction. An object of the present invention is to take measures to prevent the sputtered grains accumulated on the surface of a tantalum coil from flaking so as to prevent the generation of particles and arcing that is caused by the flaking of the sputtered grains accumulated on the surface of the coil disposed between a substrate and a sputtering target, and the adhesion of the scattered flakes onto the substrate surface; and thereby to provide a technology of improving the quality and productivity of electronic components and stably providing semiconductor elements and devices.

Abstract translation: 提供一种设置在基板和溅射靶之间的用于溅射的钽线圈，其中钽线圈具有不规则性，使得钽线圈的表面粗糙度Rz为150μm以上，线数为15〜30TPI（线数 英寸），在垂直方向上为10〜30TPI。 本发明的目的是采取措施来防止积聚在钽线圈表面上的溅射的颗粒剥落，以防止由堆积在表面上的溅射的颗粒的剥落引起的颗粒和电弧的产生 设置在基板和溅射靶之间的线圈以及散射的薄片粘附到基板表面上; 从而提供提高电子部件的质量和生产率并稳定地提供半导体元件和装置的技术。

公开(公告)号：US08183073B2

公开(公告)日：2012-05-22

申请号：US12926893

申请日：2010-12-16

Applicant: Yasuhiko Arakawa ,  Denis Guimard ,  Shiro Tsukamoto ,  Hiroji Ebe ,  Mitsuru Sugawara

Inventor： Yasuhiko Arakawa ,  Denis Guimard ,  Shiro Tsukamoto ,  Hiroji Ebe ,  Mitsuru Sugawara

IPC: H01L21/00

CPC classification number: H01L29/127 ,  B82Y10/00 ,  B82Y20/00 ,  H01L21/02395 ,  H01L21/02463 ,  H01L21/02491 ,  H01L21/02546 ,  H01L21/02549 ,  H01L21/0262 ,  H01L21/02658 ,  H01L21/02664 ,  H01L29/66977 ,  H01L33/06 ,  H01S5/305 ,  H01S5/3054 ,  H01S5/3412 ,  H01S2304/04

Abstract: The method of manufacturing the semiconductor device comprises the step of forming quantum dots 16 on a base layer 10 by self-assembled growth; the step of irradiating Sb or GaSb to the surface of the base layer 10 before or in the step of forming quantum dots 16; the step of etching the surfaces of the quantum dots 16 with an As raw material gas to thereby remove an InSb layer 18 containing Sb deposited on the surfaces of the quantum dots 16; and growing a capping layer 22 on the quantum dots 16 with the InSb layer 18 removed.

Abstract translation: 制造半导体器件的方法包括通过自组装生长在基底层10上形成量子点16的步骤; 在形成量子点16之前或阶段中将Sb或GaSb照射到基底层10的表面的步骤; 用As原料气体蚀刻量子点16的表面，从而除去沉积在量子点16的表面上的含有Sb的InSb层18; 并且在去除了InSb层18的量子点16上生长封盖层22。

公开(公告)号：US20110134950A1

公开(公告)日：2011-06-09

申请号：US12926893

申请日：2010-12-16

Applicant: Yasuhiko Arakawa ,  Denis Guimard ,  Shiro Tsukamoto ,  Hiroji Ebe ,  Mitsuru Sugawara

Inventor： Yasuhiko Arakawa ,  Denis Guimard ,  Shiro Tsukamoto ,  Hiroji Ebe ,  Mitsuru Sugawara

IPC: H01S5/30 ,  H01L21/20

CPC classification number: H01L29/127 ,  B82Y10/00 ,  B82Y20/00 ,  H01L21/02395 ,  H01L21/02463 ,  H01L21/02491 ,  H01L21/02546 ,  H01L21/02549 ,  H01L21/0262 ,  H01L21/02658 ,  H01L21/02664 ,  H01L29/66977 ,  H01L33/06 ,  H01S5/305 ,  H01S5/3054 ,  H01S5/3412 ,  H01S2304/04

Abstract: The method of manufacturing the semiconductor device comprises the step of forming quantum dots 16 on a base layer 10 by self-assembled growth; the step of irradiating Sb or GaSb to the surface of the base layer 10 before or in the step of forming quantum dots 16; the step of etching the surfaces of the quantum dots 16 with an As raw material gas to thereby remove an InSb layer 18 containing Sb deposited on the surfaces of the quantum dots 16; and growing a capping layer 22 on the quantum dots 16 with the InSb layer 18 removed.

Abstract translation: 制造半导体器件的方法包括通过自组装生长在基底层10上形成量子点16的步骤; 在形成量子点16之前或阶段中将Sb或GaSb照射到基底层10的表面的步骤; 用As原料气体蚀刻量子点16的表面，从而除去沉积在量子点16的表面上的含有Sb的InSb层18; 并且在去除了InSb层18的量子点16上生长封盖层22。

公开(公告)号：US07892871B2

公开(公告)日：2011-02-22

申请号：US11798627

申请日：2007-05-15

Applicant: Yasuhiko Arakawa ,  Denis Guimard ,  Shiro Tsukamoto ,  Hiroji Ebe ,  Mitsuru Sugawara

Inventor： Yasuhiko Arakawa ,  Denis Guimard ,  Shiro Tsukamoto ,  Hiroji Ebe ,  Mitsuru Sugawara

IPC: H01L21/00

CPC classification number: H01L29/127 ,  B82Y10/00 ,  B82Y20/00 ,  H01L21/02395 ,  H01L21/02463 ,  H01L21/02491 ,  H01L21/02546 ,  H01L21/02549 ,  H01L21/0262 ,  H01L21/02658 ,  H01L21/02664 ,  H01L29/66977 ,  H01L33/06 ,  H01S5/305 ,  H01S5/3054 ,  H01S5/3412 ,  H01S2304/04

Abstract: The method of manufacturing the semiconductor device comprises the step of forming quantum dots 16 on a base layer 10 by self-assembled growth; the step of irradiating Sb or GaSb to the surface of the base layer 10 before or in the step of forming quantum dots 16; the step of etching the surfaces of the quantum dots 16 with an As raw material gas to thereby remove an InSb layer 18 containing Sb deposited on the surfaces of the quantum dots 16; and growing a capping layer 22 on the quantum dots 16 with the InSb layer 18 removed.

Abstract translation: 制造半导体器件的方法包括通过自组装生长在基底层10上形成量子点16的步骤; 在形成量子点16之前或阶段中将Sb或GaSb照射到基底层10的表面的步骤; 用As原料气体蚀刻量子点16的表面，从而除去沉积在量子点16的表面上的含有Sb的InSb层18; 并且在去除了InSb层18的量子点16上生长封盖层22。

公开(公告)号：US20090057139A1

公开(公告)日：2009-03-05

申请号：US11909471

申请日：2006-02-08

Applicant: Atsushi Fukushima ,  Shiro Tsukamoto

Inventor： Atsushi Fukushima ,  Shiro Tsukamoto

IPC: C23C14/34

CPC classification number: C23C14/34 ,  C23C14/3407 ,  C23C14/3414 ,  H01J37/3414

Abstract: Provided is a pot-shaped copper sputtering target manufactured with die forging, wherein the Vickers hardness Hv at all locations of the inner surface of the pot-shaped target is 70 or greater. With this pot-shaped copper sputtering target, the average crystal grain size in the target structure is 65 μm or less. Further, the inner surface of the pot-shaped target comprises crystalline orientations of (220), (111), (200), (311) obtained by X-ray diffraction, and the crystalline orientation of the face subject to erosion of the pot-shaped target is of a (220) primary orientation. An object of the present invention is to obtain a manufacturing method of a high quality sputtering target by improving and devising the forging process and heat treatment process to make the crystal grain size refined and uniform, and to obtain a high-quality sputtering target.

Abstract translation: 提供了一种用模锻制造的盆形铜溅射靶，其中罐形靶的内表面的所有位置处的维氏硬度Hv为70以上。 利用该盆形铜溅射靶，靶结构中的平均结晶粒径为65μm以下。 此外，盆形靶的内表面包含通过X射线衍射获得的（220），（111），（200），（311）的结晶取向，并且受到锅腐蚀的面的结晶取向 形状的目标是（220）的主要方向。 本发明的目的是通过改进和设计锻造工艺和热处理工艺来获得高品质溅射靶的制造方法，以使晶粒细化和均匀，并获得高质量的溅射靶。

公开(公告)号：US07122848B2

公开(公告)日：2006-10-17

申请号：US11105293

申请日：2005-04-11

Applicant: Atsushi Nishida ,  Mitsuhiro Arisawa ,  Shiro Tsukamoto ,  Masahiko Shimoda

Inventor： Atsushi Nishida ,  Mitsuhiro Arisawa ,  Shiro Tsukamoto ,  Masahiko Shimoda

IPC: H01L31/072 ,  H01L31/109 ,  H01L31/0328 ,  H01L31/0336

CPC classification number: B01J31/1616 ,  B01J31/24 ,  B01J37/0238 ,  B01J2231/4211 ,  B01J2231/4261 ,  B01J2531/824 ,  Y02P20/582

Abstract: The present invention relates to a substrate having an organic metal complex bonded on the surface thereof, which is prepared by the vapor deposition of a sulfur atom onto a substrate followed by bonding of an organic metal complex such as tetrakis-triphenylphosphine palladium [Pd(PPh3)4] to the surface of the substrate; a substrate bonded transition metal catalyst using said substrate; and a method for the preparation thereof. The above substrate and metal catalyst allow the solution of some problems with respect to the safety and stability of an organic metal complex in its use, the removal of trace amounts of metals in a reaction product, waste water treatment and the like.

Abstract translation: 本发明涉及通过将硫原子气相沉积到基底上，然后将有机金属络合物如四 - 三苯基膦钯[Pd（PPh） 3 4 <4>]到衬底的表面; 使用所述衬底的基底键合过渡金属催化剂; 及其制备方法。 上述底物和金属催化剂允许解决有机金属络合物在使用中的安全性和稳定性的一些问题，在反应产物中除去微量的金属，废水处理等。

公开(公告)号：US10167547B2

公开(公告)日：2019-01-01

申请号：US13517208

申请日：2010-12-21

Applicant: Shiro Tsukamoto

Inventor： Shiro Tsukamoto

IPC: C23C14/34 ,  C23C14/14 ,  H01J37/34 ,  H01J37/32 ,  B23K20/02

Abstract: An assembly of a gadolinium target and a titanium backing plate, wherein the gadolinium target-titanium backing plate assembly has a solid-phase diffusion-bonded interface at a bonding interface between the gadolinium target and the titanium backing plate. An object of the present invention is to discover a backing plate that is suitable for the gadolinium sputtering target, explore the optimal bonding conditions, improve the deposition rate, stabilize the sputtering process, and prevent the occurrence of warpage and separation of the target material and the backing plate by increasing the bonding strength between the target material and the backing plate, as well as inhibit the generation of particles during sputtering.

公开(公告)号：US09382612B2

公开(公告)日：2016-07-05

申请号：US13148324

申请日：2010-03-17

Applicant: Shiro Tsukamoto ,  Tomio Otsuki

Inventor： Shiro Tsukamoto ,  Tomio Otsuki

IPC: C23C14/14 ,  B22D21/00 ,  B22D7/00 ,  B22D25/02 ,  C23C14/34 ,  B21J1/02 ,  B21J1/04 ,  C22F1/16 ,  H01J37/34

CPC classification number: C23C14/3414 ,  B21J1/025 ,  B21J1/04 ,  C22F1/16 ,  H01J37/3426

Abstract: Provided are a lanthanum target for sputtering which has a recrystallized structure with an average crystal grain size of 100 μm or less and has no spotty macro patterns on the surface; and a method of producing a lanthanum target for sputtering, wherein lanthanum is melted and cast to produce an ingot, the ingot is subject to knead forging at a temperature of 300 to 500° C. and subsequently subject to hot upset forging to form the shape into a rough target shape, and this is additionally subject to machining to obtain a target. This invention aims to offer technology for efficiently and stably providing a lanthanum target for sputtering which has no spotty macro patterns on the surface, and a method of producing the same.

Abstract translation: 提供了具有平均晶粒尺寸为100μm以下的再结晶结构的溅射用镧靶，​​并且在表面上没有斑点的宏观图案; 以及制造用于溅射的镧靶的方法，其中熔融并铸造镧以制造锭，将锭在300至500℃的温度下进行揉搓锻造，随后经受热镦锻以形成形状 成为粗略的目标形状，并且另外需要加工以获得目标。 本发明的目的在于提供一种用于有效且稳定地提供表面上没有斑点的宏观图案的用于溅射的镧靶的技术及其制造方法。