公开(公告)号：US20060163684A1

公开(公告)日：2006-07-27

申请号：US11387819

申请日：2006-03-24

申请人： Nobuo Nakamura ,  Hisanori Ihara ,  Ikuko Inoue ,  Hidenori Shibata ,  Akiko Nomachi ,  Yoshiyuki Shioyama ,  Hidetoshi Nozaki ,  Masako Hori ,  Akira Makabe ,  Hiroshi Naruse ,  Hideki Inokuma ,  Seigo Abe ,  Hirofumi Yamashita ,  Tetsuya Yamaguchi

发明人： Nobuo Nakamura ,  Hisanori Ihara ,  Ikuko Inoue ,  Hidenori Shibata ,  Akiko Nomachi ,  Yoshiyuki Shioyama ,  Hidetoshi Nozaki ,  Masako Hori ,  Akira Makabe ,  Hiroshi Naruse ,  Hideki Inokuma ,  Seigo Abe ,  Hirofumi Yamashita ,  Tetsuya Yamaguchi

IPC分类号： H01L31/06

CPC分类号： H01L27/14621 ,  H01L27/14601 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14643 ,  H01L27/14685 ,  H01L31/035236 ,  Y10S257/927

摘要： The present invention provides a solid-state image pickup apparatus which is able to easily discharge signal charges in a signal accumulating section and which is free from reduction in the dynamic range of the element, thermal noise in a dark state, an image-lag and so forth even if the pixel size of the MOS solid-state image pickup apparatus is reduced, the voltage of a reading gate is lowered and the concentration in the well is raised. The solid-state image pickup apparatus according to the present invention incorporates a p-type silicon substrate having a surface on which a p+ diffusion layer for constituting a photoelectric conversion region and a drain of a reading MOS field effect transistor are formed. A signal accumulating section formed by an n-type diffusion layer is formed below the p+ diffusion layer. A gate electrode of the MOS field effect transistor is, on the surface of the substrate, formed between the p+ diffusion layer and the drain. The position of an end of the signal accumulating section adjacent to the gate electrode of the MOS transistor extends over the end of the reading gate electrode of the p+ diffusion layer to a position below the gate electrode.

公开(公告)号：US5513343A

公开(公告)日：1996-04-30

申请号：US217703

申请日：1994-03-25

申请人： Hiroshi Sakano ,  Hiroshi Naruse ,  Akihiko Masubuchi ,  Ikuko Tachibana

发明人： Hiroshi Sakano ,  Hiroshi Naruse ,  Akihiko Masubuchi ,  Ikuko Tachibana

IPC分类号： G06F13/00 ,  G06F11/25 ,  G06F11/32 ,  H04L12/24 ,  H04L29/14 ,  G06F11/00

CPC分类号： H04L41/16 ,  G06F11/2257 ,  G06F11/327 ,  H04L41/0631 ,  H04L41/0686

摘要： The present invention relates to a network management system, and more particularly to a network management system for managing the states of plural alarm information generating from each one of the objects, which are to be managed, and stored in a state management area.Detailed information storage program of agents stores into detailed information files detailed information contained in alarm information transmitted from objects; alarm information coding program of a manager converts alarm information into alarm codes; and state management program stores the alarm codes into a state management area. A knowledge base enters combinations of alarm codes and effects of alarm information as decision patterns, and failure decision program decides upon failures by matching, at the time of receiving alarm information, the knowledge base and the state management area with each other.

摘要翻译： 网络管理系统技术领域本发明涉及一种网络管理系统，更具体地说，涉及一种网络管理系统，用于管理从待管理的每个对象生成的多个报警信息的状态，并存储在状态管理区域中。 代理商的详细信息存储程序存储到详细信息文件中，包含在从对象传输的报警信息中的详细信息; 管理员的报警信息编码程序将报警信息转换为报警代码; 状态管理程序将报警代码存储到状态管理区域。 知识库将报警代码和报警信息的效果组合作为决策模式，故障决策程序通过匹配，在接收到报警信息时知识库和状态管理区域进行匹配来决定故障。

公开(公告)号：US5476813A

公开(公告)日：1995-12-19

申请号：US340361

申请日：1994-11-14

申请人： Hiroshi Naruse

发明人： Hiroshi Naruse

IPC分类号： H01L29/73 ,  H01L21/02 ,  H01L21/18 ,  H01L21/331 ,  H01L21/762 ,  H01L21/84 ,  H01L27/12 ,  H01L21/20

CPC分类号： H01L21/76243 ,  H01L21/76256 ,  Y10S148/012 ,  Y10S148/051 ,  Y10S148/058 ,  Y10S148/15 ,  Y10S438/97 ,  Y10S438/977

摘要： In a method of manufacturing a bonded semiconductor substrate, a SiGe mixed crystal layer, a silicon layer containing N-type impurities, a SiGe mixed crystal layer containing N-type impurities of high concentration, and a silicon layer containing N-type impurities of high concentration are formed in this order on a top surface of a silicon substrate by an epitaxial growth process to form a first semiconductor substrate. A silicon oxide film is formed on a surface of a silicon substrate to form a second semiconductor substrate. The first and second semiconductor substrates are bonded to each other by heat treatment, with their top surfaces contacting each other. The first semiconductor substrate is etched from the back surface thereof until the SiGe mixed crystal layer is exposed, and the SiGe mixed crystal layer is etched until the silicon layer containing N-type impurities is exposed. This method prevents the thickness of the element forming layer from varying.

摘要翻译： 在制造接合半导体衬底的方法中，SiGe混晶层，含有N型杂质的硅层，含有高浓度N型杂质的SiGe混合层和含有高浓度N型杂质的硅层 通过外延生长工艺在硅衬底的顶表面上依次形成浓度以形成第一半导体衬底。 在硅衬底的表面上形成氧化硅膜以形成第二半导体衬底。 第一和第二半导体衬底通过热处理彼此接合，并且它们的顶表面彼此接触。 从其背面蚀刻第一半导体衬底，直到暴露SiGe混晶层，并且蚀刻SiGe混晶层，直到暴露含有N型杂质的硅层。 该方法防止元件形成层的厚度变化。

公开(公告)号：US5365090A

公开(公告)日：1994-11-15

申请号：US45707

申请日：1993-04-14

申请人： Shin-ichi Taka ,  Kouji Kimura ,  Hiroshi Naruse ,  Kuniaki Kumamaru

发明人： Shin-ichi Taka ,  Kouji Kimura ,  Hiroshi Naruse ,  Kuniaki Kumamaru

IPC分类号： H01L29/165 ,  H01L21/331 ,  H01L29/205 ,  H01L29/73 ,  H01L29/737 ,  H01L29/72

CPC分类号： H01L29/66242 ,  H01L29/7378

摘要： The specification discloses a hetero bipolar transistor which comprises a semiconductor substrate, a first silicon layer serving as a collector, a first silicon-germanium layer serving as a base, a second silicon layer serving as a collector, and a second silicon-germanium layer. A side wall of the second silicon-germanium layer is in contact with side walls of the first silicon layer, the first silicon-germanium layer and the second silicon layer. The second silicon-germanium layer is disposed to surround the first silicon layer, the first silicon-germanium layer, and the second silicon layer, and has an energy band gap substantially the same as that of the first silicon-germanium layer.

摘要翻译： 该说明书公开了一种异质双极晶体管，其包括半导体衬底，用作集电极的第一硅层，用作基极的第一硅 - 锗层，用作集电极的第二硅层和第二硅 - 锗层。 第二硅 - 锗层的侧壁与第一硅层，第一硅 - 锗层和第二硅层的侧壁接触。 第二硅锗层被设置为围绕第一硅层，第一硅 - 锗层和第二硅层，并且具有与第一硅 - 锗层基本相同的能带隙。

公开(公告)号：US09504632B2

公开(公告)日：2016-11-29

申请号：US13471765

申请日：2012-05-15

申请人： Hiroshi Naruse ,  Yoshimitsu Tanabe ,  Osamu Kohgo ,  Masataka Miyasato ,  Hideyuki Ueki ,  Chidzuru Inami ,  Shunsuke Miyata

发明人： Hiroshi Naruse ,  Yoshimitsu Tanabe ,  Osamu Kohgo ,  Masataka Miyasato ,  Hideyuki Ueki ,  Chidzuru Inami ,  Shunsuke Miyata

IPC分类号： A61K6/09 ,  C07C271/10 ,  C07C271/24 ,  C07C271/28 ,  C07C271/34 ,  C07C271/38 ,  C08L33/08 ,  C07C271/36 ,  C08G18/67 ,  C08G18/75 ,  C08G18/76 ,  C08G18/00

CPC分类号： A61K6/09 ,  C07C271/10 ,  C07C271/24 ,  C07C271/28 ,  C07C271/34 ,  C07C271/36 ,  C07C271/38 ,  C07C2601/14 ,  C07C2603/66 ,  C08G18/003 ,  C08G18/672 ,  C08G18/755 ,  C08G18/758 ,  C08G18/7621 ,  C08G18/7671 ,  C08L33/08 ,  C08L33/04

摘要： The present invention provides a novel compound and a composition including the compound that exhibit small polymerization shrinkage particularly during curing and are producible at low cost on the industrial scale. The compound of the present invention is represented by Formula (1):

公开(公告)号：US07951968B2

公开(公告)日：2011-05-31

申请号：US12823650

申请日：2010-06-25

申请人： Hiroshi Naruse ,  Atsuo Otsuji ,  Mitsuo Nakamura

发明人： Hiroshi Naruse ,  Atsuo Otsuji ,  Mitsuo Nakamura

IPC分类号： C07F7/00 ,  C07F1/00 ,  C07F3/00 ,  C08G79/00

CPC分类号： C08G18/3874 ,  C08G18/3855 ,  C08G18/3863 ,  C08G18/3876 ,  C08G18/7642 ,  C08G18/791 ,  C08G18/8125 ,  C08G75/00 ,  C08G75/04 ,  C08G75/045 ,  C08G79/00

摘要： A compound having two or more thiol groups and an atom selected from metal atoms in a molecule, a polythiol composition containing such a compound, a polymerizable composition containing such a polythiol composition, a resin obtained by polymerization of such a polymerizable composition, and an optical component obtained from such a resin are provided. The polymerizable composition can be a raw material for a resin having high transparency, good heat resistance and mechanical strength required for optical components such as plastic lenses and the like, while attaining a high refractive index (nd) exceeding 1.7.

摘要翻译： 具有两个以上硫醇基和选自分子中的金属原子的原子的化合物，含有该化合物的多硫醇组合物，含有这种多硫醇组合物的聚合性组合物，通过聚合该聚合性组合物得到的树脂和光学 提供了由这种树脂获得的组分。 聚合性组合物可以是获得高于1.7的高折射率（nd）的树脂的原料，其具有高透明性，良好的耐热性和诸如塑料透镜等的光学部件所需的机械强度。

公开(公告)号：US07928247B2

公开(公告)日：2011-04-19

申请号：US12305536

申请日：2007-06-14

申请人： Mitsuo Nakamura ,  Shinichi Usugi ,  Hiroshi Naruse ,  Atsuo Otsuji

发明人： Mitsuo Nakamura ,  Shinichi Usugi ,  Hiroshi Naruse ,  Atsuo Otsuji

IPC分类号： C07D327/00

CPC分类号： C07F9/655327 ,  C07F9/655309 ,  C08G75/06 ,  C08G75/08

摘要： Disclosed is a polymerizable composition containing a compound represented by the following general formula (1), wherein, in the formula, M represents P, P═O or P═S; X1 and X2 each independently represent a sulfur atom or an oxygen atom; R1 represents a divalent organic group; m represents 0 or an integer of not less than 1; n represents an integer of not less than 1 but not more than 3; p and q represent (1, 0) or (0, 1); and Y represents an inorganic or organic residue.

摘要翻译： 公开了含有下述通式（1）表示的化合物的聚合性组合物，式中，M表示P，P = O或P = S; X1和X2各自独立地表示硫原子或氧原子; R1表示二价有机基团; m表示0或1以上的整数， n表示1以上3以下的整数， p和q表示（1,0）或（0,1）; Y表示无机或有机残基。

公开(公告)号：US20090076208A1

公开(公告)日：2009-03-19

申请号：US12280853

申请日：2007-02-27

申请人： Shinichi Usugi ,  Mitsuo Nakamura ,  Hiroshi Naruse

发明人： Shinichi Usugi ,  Mitsuo Nakamura ,  Hiroshi Naruse

IPC分类号： C08K3/06 ,  C08G79/12 ,  C08G75/00

CPC分类号： C08G75/06 ,  C08L81/02 ,  G02B1/04 ,  C08L81/00

摘要： A polymerizable composition including a compound represented by the following formula (1) and elemental sulfur. (In the following formula (1), M represents a metal atom; X1 and X2 each independently represent a sulfur atom or an oxygen atom; R1 represents a divalent organic group; m represents an integer of 0 or 1 or more; p represents an integer of 1 or more and n or less; n represents the valency of the metal atom M; Y each independently represent an inorganic or organic residue; and when n−p is 2 or more, Y's may bind to each other to form a ring containing the metal atom M.)

摘要翻译： 一种包含由下式（1）表示的化合物和元素硫的可聚合组合物。 （在下式（1）中，M表示金属原子; X1和X2各自独立地表示硫原子或氧原子; R1表示二价有机基团，m表示0以上1以上的整数，p表示 1以上且n以下的整数; n表示金属原子M的化合价; Y各自独立地表示无机或有机残基;当np为2以上时，Y可以相互结合形成含有 金属原子M.）

公开(公告)号：US07224003B2

公开(公告)日：2007-05-29

申请号：US11387819

申请日：2006-03-24

申请人： Nobuo Nakamura ,  Hisanori Ihara ,  Ikuko Inoue ,  Hidenori Shibata ,  Akiko Nomachi ,  Yoshiyuki Shioyama ,  Hidetoshi Nozaki ,  Masako Hori ,  Akira Makabe ,  Hiroshi Naruse ,  Hideki Inokuma ,  Seigo Abe ,  Hirofumi Yamashita ,  Tetsuya Yamaguchi

发明人： Nobuo Nakamura ,  Hisanori Ihara ,  Ikuko Inoue ,  Hidenori Shibata ,  Akiko Nomachi ,  Yoshiyuki Shioyama ,  Hidetoshi Nozaki ,  Masako Hori ,  Akira Makabe ,  Hiroshi Naruse ,  Hideki Inokuma ,  Seigo Abe ,  Hirofumi Yamashita ,  Tetsuya Yamaguchi

IPC分类号： H01L31/0328

CPC分类号： H01L27/14621 ,  H01L27/14601 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14643 ,  H01L27/14685 ,  H01L31/035236 ,  Y10S257/927

摘要： The present invention provides a solid-state image pickup apparatus which is able to easily discharge signal charges in a signal accumulating section and which is free from reduction in the dynamic range of the element, thermal noise in a dark state, an image-lag and so forth even if the pixel size of the MOS solid-state image pickup apparatus is reduced, the voltage of a reading gate is lowered and the concentration in the well is raised. The solid-state image pickup apparatus according to the present invention incorporates a p-type silicon substrate having a surface on which a p+ diffusion layer for constituting a photoelectric conversion region and a drain of a reading MOS field effect transistor are formed. A signal accumulating section formed by an n-type diffusion layer is formed below the p+ diffusion layer. A gate electrode of the MOS field effect transistor is, on the surface of the substrate, formed between the p+ diffusion layer and the drain. The position of an end of the signal accumulating section adjacent to the gate electrode of the MOS transistor extends over the end of the reading gate electrode of the p+ diffusion layer to a position below the gate electrode.

摘要翻译： 本发明提供一种固态摄像装置，其能够容易地放大信号存储部中的信号电荷，并且不会降低元件的动态范围，处于黑暗状态的热噪声，图像滞后和 所以即使MOS固态摄像装置的像素尺寸减小，读门电压降低，也增加了阱中的浓度。 根据本发明的固态图像拾取装置包括具有用于构成光电转换区域的用于扩散层的表面的p型硅衬底和读取MOS场效应的漏极 形成晶体管。 由p型扩散层的下方形成由n型扩散层形成的信号累积部。 MOS场效应晶体管的栅电极在衬底的表面上形成在扩散层和漏极之间。 与MOS晶体管的栅电极相邻的信号累积部分的端部的位置在p0 +扩散层的读取栅电极的末端延伸到栅电极下方的位置。

公开(公告)号：US07042061B2

公开(公告)日：2006-05-09

申请号：US10727515

申请日：2003-12-05

申请人： Nobuo Nakamura ,  Hisanori Ihara ,  Ikuko Inoue ,  Hidenori Shibata ,  Akiko Nomachi ,  Yoshiyuki Shioyama ,  Hidetoshi Nozaki ,  Masako Hori ,  Akira Makabe ,  Hiroshi Naruse ,  Hideki Inokuma ,  Seigo Abe ,  Hirofumi Yamashita ,  Tetsuya Yamaguchi

发明人： Nobuo Nakamura ,  Hisanori Ihara ,  Ikuko Inoue ,  Hidenori Shibata ,  Akiko Nomachi ,  Yoshiyuki Shioyama ,  Hidetoshi Nozaki ,  Masako Hori ,  Akira Makabe ,  Hiroshi Naruse ,  Hideki Inokuma ,  Seigo Abe ,  Hirofumi Yamashita ,  Tetsuya Yamaguchi

IPC分类号： H01L31/06 ,  H01L27/148

CPC分类号： H01L27/14621 ,  H01L27/14601 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14643 ,  H01L27/14685 ,  H01L31/035236 ,  Y10S257/927

摘要： The present invention provides a solid-state image pickup apparatus which is able to easily discharge signal charges in a signal accumulating section and which is free from reduction in the dynamic range of the element, thermal noise in a dark state, an image-lag and so forth even if the pixel size of the MOS solid-state image pickup apparatus is reduced, the voltage of a reading gate is lowered and the concentration in the well is raised. The solid-state image pickup apparatus according to the present invention incorporates a p-type silicon substrate having a surface on which a p+ diffusion layer for constituting a photoelectric conversion region and a drain of a reading MOS field effect transistor are formed. A signal accumulating section formed by an n-type diffusion layer is formed below the p+ diffusion layer. A gate electrode of the MOS field effect transistor is, on the surface of the substrate, formed between the p+ diffusion layer and the drain. The position of an end of the signal accumulating section adjacent to the gate electrode of the MOS transistor extends over the end of the reading gate electrode of the p+ diffusion layer to a position below the gate electrode.

摘要翻译： 本发明提供一种固态摄像装置，其能够容易地放大信号存储部中的信号电荷，并且不会降低元件的动态范围，处于黑暗状态的热噪声，图像滞后和 所以即使MOS固态摄像装置的像素尺寸减小，读门电压降低，也增加了阱中的浓度。 根据本发明的固态图像拾取装置包括具有用于构成光电转换区域的用于扩散层的表面的p型硅衬底和读取MOS场效应的漏极 形成晶体管。 由p型扩散层的下方形成由n型扩散层形成的信号累积部。 MOS场效应晶体管的栅电极在衬底的表面上形成在扩散层和漏极之间。 与MOS晶体管的栅电极相邻的信号累积部分的端部的位置在p0 +扩散层的读取栅电极的末端延伸到栅电极下方的位置。