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36 条记录 (耗时 0.031 秒)

    Oligomer Probe Array with Improved Signal-to-Noise Ratio and Detection Sensitivity and Method of Manufacturing the Same
    22.
    发明申请
    Oligomer Probe Array with Improved Signal-to-Noise Ratio and Detection Sensitivity and Method of Manufacturing the Same 审中-公开
    具有改进的信噪比和检测灵敏度的低聚物探针阵列及其制造方法

    公开(公告)号：US20080038712A1

    公开(公告)日：2008-02-14

    申请号：US11686492

    申请日：2007-03-15

    申请人： Jung-hwan Hah ,  Sung-min Chi ,  Kyoung-seon Kim ,  Won-sun Kim

    发明人： Jung-hwan Hah ,  Sung-min Chi ,  Kyoung-seon Kim ,  Won-sun Kim

    IPC分类号： G01N33/53

    CPC分类号： B01J19/0046 ,  B01J2219/00317 ,  B01J2219/00605 ,  B01J2219/00662 ,  B01J2219/00722

    摘要： An oligomer probe array with improved signal-to-noise ratio and desired detection sensitivity ever when a reduced design rule is employed includes a substrate, a plurality of probe cell active regions formed on or in the substrate, each of the plurality of probe cell active regions having a three-dimensional surface and being coupled, with at least one oligomer probe with its own sequence, and a probe cell isolation region defining the probe cell active regions and having no functional groups for coupling with the oligomer probes on a surface.

    摘要翻译： 当采用减少的设计规则时，具有改进的信噪比和期望的检测灵敏度的低聚物探针阵列包括：衬底，形成在衬底上或衬底中的多个探针单元有源区，多个探针单元中的每个探针单元活性 具有三维表面并与其自身序列的至少一个低聚物探针偶联的区域和限定探针细胞活性区并且不具有用于与表面上的低聚物探针偶联的官能团的探针细胞隔离区。

    Mask patterns for semiconductor device fabrication and related methods and structures
    27.
    发明申请
    Mask patterns for semiconductor device fabrication and related methods and structures 失效
    半导体器件制造的掩模图案及相关方法和结构

    公开(公告)号：US20060063384A1

    公开(公告)日：2006-03-23

    申请号：US11232703

    申请日：2005-09-22

    申请人： Jung-hwan Hah ,  Hyun-woo Kim ,  Mitsuhiro Hata ,  Sang-gyun Woo

    发明人： Jung-hwan Hah ,  Hyun-woo Kim ,  Mitsuhiro Hata ,  Sang-gyun Woo

    IPC分类号： G03F1/00 ,  H01L21/302

    CPC分类号： H01L21/0274 ,  G03F7/405 ,  H01L21/0273 ,  H01L21/31144

    摘要： Methods of forming an integrated circuit device may include forming a resist pattern on a layer of an integrated circuit device with portions of the layer being exposed through openings of the resist pattern. An organic-inorganic hybrid siloxane network film may be formed on the resist pattern. Portions of the layer exposed through the resist pattern and the organic-inorganic hybrid siloxane network film may then be removed. Related structures are also discussed.

    摘要翻译： 形成集成电路器件的方法可以包括在集成电路器件的层上形成抗蚀剂图案，其中该层的部分通过抗蚀剂图案的开口露出。 可以在抗蚀剂图案上形成有机 - 无机杂化硅氧烷网膜。 然后可以去除通过抗蚀剂图案暴露的层的部分和有机 - 无机杂化硅氧烷网膜。 还讨论了相关结构。

    Mask patterns for semiconductor device fabrication and related methods
    28.
    发明授权
    Mask patterns for semiconductor device fabrication and related methods 失效
    半导体器件制造的掩模图案及相关方法

    公开(公告)号：US07361609B2

    公开(公告)日：2008-04-22

    申请号：US11232703

    申请日：2005-09-22

    申请人： Jung-hwan Hah ,  Hyun-woo Kim ,  Mitsuhiro Hata ,  Sang-gyun Woo

    发明人： Jung-hwan Hah ,  Hyun-woo Kim ,  Mitsuhiro Hata ,  Sang-gyun Woo

    IPC分类号： H01L21/302

    CPC分类号： H01L21/0274 ,  G03F7/405 ,  H01L21/0273 ,  H01L21/31144

    摘要： Methods of forming an integrated circuit device may include forming a resist pattern on a layer of an integrated circuit device with portions of the layer being exposed through openings of the resist pattern. An organic-inorganic hybrid siloxane network film may be formed on the resist pattern. Portions of the layer exposed through the resist pattern and the organic-inorganic hybrid siloxane network film may then be removed. Related structures are also discussed.

    摘要翻译： 形成集成电路器件的方法可以包括在集成电路器件的层上形成抗蚀剂图案，其中该层的部分通过抗蚀剂图案的开口露出。 可以在抗蚀剂图案上形成有机 - 无机杂化硅氧烷网膜。 然后可以去除通过抗蚀剂图案暴露的层的部分和有机 - 无机杂化硅氧烷网膜。 还讨论了相关结构。

    MASK SET FOR MICROARRAY, METHOD OF FABRICATING MASK SET, AND METHOD OF FABRICATING MICROARRAY USING MASK SET
    30.
    发明申请
    MASK SET FOR MICROARRAY, METHOD OF FABRICATING MASK SET, AND METHOD OF FABRICATING MICROARRAY USING MASK SET 审中-公开
    用于微阵列的掩模设置，制作掩模组的方法以及使用掩模设置微阵列的方法

    公开(公告)号：US20080193863A1

    公开(公告)日：2008-08-14

    申请号：US12030647

    申请日：2008-02-13

    申请人： Jae-pil Shin ,  Jin-sook Choi ,  Jung-hwan Hah ,  Moon-hyun Yoo ,  Jong-bae Lee

    发明人： Jae-pil Shin ,  Jin-sook Choi ,  Jung-hwan Hah ,  Moon-hyun Yoo ,  Jong-bae Lee

    IPC分类号： G03F7/00 ,  G03F1/00

    CPC分类号： G03F1/36 ,  G03F1/00

    摘要： Provided are a mask set for in-situ synthesizing probes of a microarray, a method of fabricating the mask set, and a method of fabricating the microarray using the mask set. A mask set for a microarray includes a plurality of masks for in-situ synthesizing probes onto a substrate which includes an array of a plurality of probe cells, wherein each mask includes light-transmitting regions and light-blocking regions, each probe cell corresponds to a light-transmitting region or a light-blocking region, and a pattern of each light-transmitting region is corrected for an optical proximity effect.

    摘要翻译： 提供了用于原位合成微阵列探针的掩模组，制造掩模组的方法，以及使用掩模组制造微阵列的方法。 用于微阵列的掩模组包括多个掩模，用于在包括多个探针单元的阵列的基板上原位合成探针，其中每个掩模包括透光区域和遮光区域，每个探针单元对应于 光透射区域或遮光区域以及每个透光区域的图案被校正为光学邻近效应。