公开(公告)号：US12034009B2

公开(公告)日：2024-07-09

申请号：US17463022

申请日：2021-08-31

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Chih-Yu Lai ,  Chih-Liang Chen ,  Ching-Wei Tsai ,  Shang-Wen Chang ,  Li-Chun Tien

IPC分类号： H01L27/12 ,  H01L21/768 ,  H01L21/822 ,  H01L21/8234 ,  H01L23/48 ,  H01L23/528 ,  H01L23/535 ,  H01L27/06 ,  H01L27/088 ,  H01L29/423 ,  H01L29/786

CPC分类号： H01L27/124 ,  H01L21/76898 ,  H01L23/481 ,  H01L27/1259

摘要： A semiconductor device includes a base isolation layer, a first transistor with a first source electrode at a first side of the base isolation layer. A bridge pillar extends through the base isolation layer, and a metal electrode electrically connects the bridge pillar to the first source electrode. The metal electrode and the first source electrode are at the same side of the base isolation layer. A second metal electrode at an opposite side of the base isolation layer electrically connects to the bridge pillar and to a conductive line at the second side of the base isolation layer.

公开(公告)号：US12009304B2

公开(公告)日：2024-06-11

申请号：US18334136

申请日：2023-06-13

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Chih-Liang Chen ,  Li-Chun Tien

IPC分类号： H01L23/528 ,  H01L21/02 ,  H01L21/285 ,  H01L21/306 ,  H01L29/06 ,  H01L29/423 ,  H01L29/45 ,  H01L29/66 ,  H01L29/786

CPC分类号： H01L23/5286 ,  H01L21/02603 ,  H01L21/28518 ,  H01L21/30604 ,  H01L21/30625 ,  H01L29/0673 ,  H01L29/42392 ,  H01L29/45 ,  H01L29/66545 ,  H01L29/66553 ,  H01L29/66742 ,  H01L29/78618 ,  H01L29/78696

摘要： A semiconductor device includes a substrate, a gate structure, source/drain structures, a backside via, and a power rail. The gate structure extends along a first direction parallel with a front-side surface of the substrate. The backside via extends along a second direction parallel with the front-side surface of the substrate but perpendicular to the first direction, the backside via has a first portion aligned with one of the source/drain structures along the first direction and a second portion aligned with the gate structure along the first direction, the first portion of the backside via has a first width along the first direction, and the second portion of the backside via has a second width along the first direction, in which the first width is greater than the second width. The power rail is on a backside surface of the substrate and in contact with the backside via.

公开(公告)号：US11983475B2

公开(公告)日：2024-05-14

申请号：US18165411

申请日：2023-02-07

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Pin-Dai Sue ,  Po-Hsiang Huang ,  Fong-Yuan Chang ,  Chi-Yu Lu ,  Sheng-Hsiung Chen ,  Chin-Chou Liu ,  Lee-Chung Lu ,  Yen-Hung Lin ,  Li-Chun Tien ,  Yi-Kan Cheng

IPC分类号： G06F30/00 ,  G06F30/373 ,  G06F30/392 ,  G06F30/394 ,  G06F111/20

CPC分类号： G06F30/392 ,  G06F30/373 ,  G06F30/394 ,  G06F2111/20

摘要： A semiconductor device includes: M*1st conductors in a first layer of metallization (M*1st layer) and being aligned correspondingly along different corresponding ones of alpha tracks and representing corresponding inputs of a cell region in the semiconductor device; and M*2nd conductors in a second layer of metallization (M*2nd layer) aligned correspondingly along beta tracks, and the M*2nd conductors including at least one power grid (PG) segment and one or more of an output pin or a routing segment; and each of first and second ones of the input pins having a length sufficient to accommodate at most two access points; each of the access points of the first and second input pins being aligned to a corresponding different one of first to fourth beta tracks; and the PG segment being aligned with one of the first to fourth beta tracks.

公开(公告)号：US11855068B2

公开(公告)日：2023-12-26

申请号：US17213980

申请日：2021-03-26

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Guo-Huei Wu ,  Chih-Liang Chen ,  Li-Chun Tien

IPC分类号： H01L27/02 ,  H01L27/092 ,  H01L23/528 ,  H01L29/06 ,  H01L29/423 ,  H01L29/775 ,  H01L29/786 ,  G06F30/392 ,  G06F30/394

CPC分类号： H01L27/0207 ,  G06F30/392 ,  G06F30/394 ,  H01L23/5286 ,  H01L27/092 ,  H01L29/0673 ,  H01L29/42392 ,  H01L29/775 ,  H01L29/78696

摘要： A semiconductor cell structure includes first-type transistors aligned within a first-type active zone, second-type transistors aligned within a second-type active zone, a first power rail and a second power rail. Each of the first-type active zone and the second-type active zone is between a first alignment boundary and a second alignment boundary extending in a first direction which is perpendicular to a second direction. A first distance along the second direction between the long edge of the first power rail and the first alignment boundary of the first-type active zone is different from a second distance along the second direction between the long edge of the second power rail and the first alignment boundary of the second-type active zone by a predetermined distance.

公开(公告)号：US11854966B2

公开(公告)日：2023-12-26

申请号：US18156711

申请日：2023-01-19

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Ta-Pen Guo ,  Chien-Ying Chen ,  Li-Chun Tien ,  Lee-Chung Lu

IPC分类号： H01L23/522 ,  G06F30/394

CPC分类号： H01L23/5226 ,  G06F30/394

摘要： A method of manufacturing a semiconductor device includes forming via structures in a first via layer over a transistor layer, the forming the via structures in the first via layer including forming a first via structure in the first via layer, the first via structure being included in a first deep via arrangement; forming conductive segments in a first metallization layer over the first via layer, the forming the conductive segments in the first metallization layer including forming M_1st routing segments at least a majority of which, relative to a first direction, have corresponding long axes with lengths which at least equal if not exceed a first permissible minimum value for routing segments in the first metallization layer; and forming an M_1st interconnection segment having a long axis which is less than the first permissible minimum value, the M_1st interconnection segment being included in the first deep via arrangement.

公开(公告)号：US11790148B2

公开(公告)日：2023-10-17

申请号：US17117986

申请日：2020-12-10

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Hui-Zhong Zhuang ,  Ting-Wei Chang ,  Lee-Chung Lu ,  Li-Chun Tien ,  Shun Li Chen

IPC分类号： G06F30/398 ,  H01L27/02 ,  H01L27/118 ,  G06F30/392

CPC分类号： G06F30/398 ,  G06F30/392 ,  H01L27/0207 ,  H01L27/11807 ,  H01L2027/11881

摘要： An IC structure includes a first cell and a first and second rail. The first cell includes a first and second active region and a first, a second and a third gate structure. The first active region having a first dopant type. The second active region having a second dopant type. The first gate structure extending in a second direction, overlapping the first or the second active region. The second gate structure extending in the second direction, and overlapping a first edge of the first or second active region. The third gate structure extending in the second direction, and overlapping at least a second edge of the first or second active region. The first rail extending in the first direction and overlapping a middle portion of the first active region. The second rail extending in the first direction and overlapping a middle portion of the second active region.

公开(公告)号：US11764154B2

公开(公告)日：2023-09-19

申请号：US17390177

申请日：2021-07-30

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Chih-Liang Chen ,  Guo-Huei Wu ,  Ching-Wei Tsai ,  Shang-Wen Chang ,  Li-Chun Tien

IPC分类号： H01L23/528 ,  H01L27/088 ,  H01L29/06 ,  H01L21/8234

CPC分类号： H01L23/5286 ,  H01L21/823475 ,  H01L27/088 ,  H01L29/0665 ,  H01L29/0669

摘要： An integrated circuit device includes a first-type active-region semiconductor structure, a first gate-conductor, a second-type active-region semiconductor structure that is stacked with the first-type active-region semiconductor structure, and a second gate-conductor. The integrated circuit device also includes a front-side conductive layer above the two active-region semiconductor structures and a back-side conductive layer below the two active-region semiconductor structures. The integrated circuit device also includes a front-side power rail and a front-side signal line in the front-side conductive layer and includes a back-side power rail and a back-side signal line in the back-side conductive layer. The integrated circuit device also includes a first source conductive segment connected to the front-side power rail and a second source conductive segment connected to the back-side power rail. The integrated circuit device further includes a drain conductive segment connected to either the front-side signal line or the back-side signal line.

公开(公告)号：US11694013B2

公开(公告)日：2023-07-04

申请号：US17860985

申请日：2022-07-08

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Ting-Wei Chiang ,  Hui-Zhong Zhuang ,  Li-Chun Tien

IPC分类号： G06F30/392 ,  H01L27/02 ,  H01L27/092

CPC分类号： G06F30/392 ,  H01L27/0207 ,  H01L27/092

摘要： An integrated circuit includes a first and a set of conductive traces, and a first conductive feature. The second set of conductive traces includes a first conductive trace of the second set of conductive traces corresponding to a gate terminal of a first p-type transistor, and a second conductive trace of the second set of conductive traces corresponding to a gate terminal of a first n-type transistor. The first conductive feature corresponds to at least a first contact of a first dummy transistor. The first conductive trace of the second set of conductive traces is electrically coupled to the second conductive trace of the second set of conductive traces by at least the first conductive feature. The first n-type transistor being part of a first transmission gate. The first p-type transistor being part of a second transmission gate.

公开(公告)号：US11675961B2

公开(公告)日：2023-06-13

申请号：US17670370

申请日：2022-02-11

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Shun Li Chen ,  Li-Chun Tien ,  Ting Yu Chen ,  Wei-Ling Chang

IPC分类号： G06F30/398 ,  G06F30/392 ,  G06F30/394 ,  G06F30/3947 ,  G06F30/3953 ,  G03F1/36 ,  H01L21/70 ,  H01L25/00 ,  H03K19/00

CPC分类号： G06F30/398 ,  G03F1/36 ,  G06F30/392 ,  G06F30/394 ,  G06F30/3947 ,  G06F30/3953 ,  H01L21/70 ,  H01L25/00 ,  H03K19/00

摘要： A semiconductor cell structure includes four pairs of conductive segments, a first gate-strip, and a second gate-strip. A first conductive segment is configured to have a first supply voltage, and a second conductive segment is configured to have a second supply voltage. Each of the first gate-strip and the second gate-strip intersects an active zone over a channel region of a transistor. The first gate-strip is conductively connected to the second conductive segment. The semiconductor cell structure also includes a first dummy gate-strip and a second dummy gate-strip. The first dummy gate-strip separates from the first gate-strip by one CPP. The second dummy gate-strip separates from the second gate-strip by one CPP. The first gate-strip and the second gate-strip are separated from each other by two CPPs. The dummy gate-strip and the second dummy gate-strip are separated from each other by four CPPs.

公开(公告)号：US11631661B2

公开(公告)日：2023-04-18

申请号：US17317216

申请日：2021-05-11

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Tung-Heng Hsieh ,  Ting-Wei Chiang ,  Chung-Te Lin ,  Hui-Zhong Zhuang ,  Li-Chun Tien ,  Sheng-Hsiung Wang

IPC分类号： H01L27/02 ,  G06F30/39 ,  G06F30/392 ,  G06F30/398 ,  H01L23/528 ,  H01L27/092

摘要： An integrated circuit includes a first gate electrode structure extending in a first direction and having a first portion and a second portion separated from each other. The integrated circuit further includes a second gate electrode structure extending in the first direction and separated in a second direction from the first gate electrode structure. The integrated circuit further includes a conductive feature. The conductive feature includes a first section electrically connected to the second portion, wherein the first section extends in the second direction. The conductive feature further includes a second section electrically connected to the second gate electrode structure, wherein the second section extends in the second direction. The conductive feature further includes a third section electrically connecting the first section and the second section, wherein the third section extends in a third direction angled with respect to both the first direction and the second direction.