摘要:
A hardenable molding composition comprising hydratable gypsum, a vinyl monomer, a source of hydrogen sulfite ions and water is disclosed. With this molding composition a hardened product can be obtained having high strength due to the combined effect of the hydraulic reaction of the gypsum and the polymerization reaction of the vinyl monomer.
摘要:
Metal powder is suspended in an aqueous medium containing a radical-polymerizable monomer and polymerization is conducted in the presence of an acidic sulfite ion to produce a plastic coated metal powder which is effectively used for forming conductive plastics, molded articles for sintering, pressed powder magnetic cores and the like.
摘要:
[PROBLEM] To enable confirmation of whether a substrate processing system is being illicitly used and preventing that use when there is the fact of illicit use.[MEANS FOR SOLUTION] A license file LF is a file encrypting license information L including usage terms of a substrate processing system for a specific user. A match confirmation program P2 confirms the match between the content of the license file LF decrypted by a decryption program P1 and device information DI, network information NI, and current time CT obtained from the substrate processing system to confirm the existence of the fact of illicit use. If there is illicit use, the control program P3 stops operation of the substrate processing system until predetermined action is taken based on the information from the match confirmation program P2.
摘要:
A hollow core body for signal transmission cable comprises an inner conductor that employs a compressed bunched conductor formed by bunching and compressing plural strands such that a cross-section of the compressed bunched conductor is substantially circular, and a hollow insulating core that includes an inner annular member, rib members, an outer annular member; and hollow members. Accordingly, as almost no recesses are produced on the circumferential surface of the compressed bunched conductor, weakening of the mechanical strength due to presence of recesses on the circumferential surface of the inner conductor can be suppressed.
摘要:
A semiconductor device in which a metal silicide layer is formed by a salicide process is improved in reliability. By a salicide process according to a partial reaction method, metal silicide layers are formed over respective surfaces of gate electrodes, n+-type semiconductor regions, and p+-type semiconductor regions. In a first heat treatment when the metal silicide layers are formed, a heat-conduction type anneal apparatus is used for the heat treatment of a semiconductor wafer. In a second heat treatment, a microwave anneal apparatus is used for the heat treatment of the semiconductor wafer, thereby reducing the temperature of the second heat treatment and preventing abnormal growth of the metal silicide layers. Thus, a junction leakage current in the metal silicide layers is reduced.
摘要:
The present invention improves the performance of a semiconductor device wherein a metal silicide layer is formed through a salicide process. A metal silicide layer is formed over the surfaces of first and second gate electrodes, n+-type semiconductor regions, and p+-type semiconductor regions through a salicide process of a partial reaction type without the use of a salicide process of a whole reaction type. In a heat treatment for forming the metal silicide layer, by heat-treating a semiconductor wafer not with an annealing apparatus using lamps or lasers but with a thermal conductive annealing apparatus using carbon heaters, a thin metal silicide layer is formed with a small thermal budget and a high degree of accuracy and microcrystals of NiSi are formed in the metal silicide layer through a first heat treatment.
摘要:
In a CMIS device, to improve the operating characteristics of an n-channel electric field transistor that is formed by using a strained silicon technique, without degrading the operating characteristics of a p-channel field effect transistor. After forming a source/drain (an n-type extension region and an n-type diffusion region) of an nMIS and a source/drain (a p-type extension region and a p-type diffusion region) of a pMIS, the each source/drain having a desired concentration profile and resistance, a Si:C layer having a desired amount of strain is formed in the n-type diffusion region, and thus the optimum parasitic resistance and the optimum amount of strain in the Si:C layer are obtained in the source/drain of the nMIS. Moreover, by performing a heat treatment in forming the Si:C layer in a short time equal to or shorter than 1 millisecond, a change in the concentration profile of the respective p-type impurities of the already-formed p-type extension region and p-type diffusion region is suppressed.
摘要:
An imaging device includes: a first imaging unit which does not include a phase difference detecting pixel on an imaging element; a second imaging unit which includes a phase difference detecting pixel on an imaging element; a pixel comparing unit which compares first obtained image obtained by the first imaging unit with a second obtained image obtained by the second imaging unit; a correcting unit which corrects phase difference information obtained by the second imaging unit based on a comparison result by the image comparing unit; a phase difference applying unit which applies the phase difference information corrected by the correcting unit to the first obtained image; and a recording unit which records image information.
摘要:
In order to block hydrogen ions produced when forming an interlayer insulating film by HDP-CVD or the like to thereby suppress an adverse effect of the hydrogen ions on a device, in a semiconductor device including a contact layer, a metal interconnection and an interlayer insulating film on a semiconductor substrate having a gate electrode formed thereon, the interlayer insulating film is formed on the metal interconnection by bias-applied plasma CVD using source gas containing hydrogen atoms, and a silicon oxynitride film is provided in the underlayer of the metal interconnection and the interlayer insulating film.
摘要:
There is provided a semiconductor device including: an insulating layer provided on a substrate and formed with plural cavities; wiring lines provided on the insulating layer; plural branched wiring lines that branch from the wiring lines so as to respectively overlap with the plural cavities when seen in plan view; a conductive portion formed on the wiring lines; an external terminal formed on the conductive portion; and a sealing resin layer that seals the wiring lines and the conductive portion.