公开(公告)号：US20210366715A1

公开(公告)日：2021-11-25

申请号：US17396948

申请日：2021-08-09

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ta-Chun Ma ,  Yi-Cheng Li ,  Pin-Ju Liang ,  Cheng-Po Chau ,  Jung-Jen Chen ,  Pei-Ren Jeng ,  Chii-Horng Li ,  Kei-Wei Chen ,  Cheng-Hsiung Yen

IPC: H01L21/223 ,  H01L29/66 ,  H01L21/311 ,  H01L21/324 ,  H01L21/8238 ,  H01L29/78 ,  H01L27/092

Abstract: In an embodiment, a method includes: forming a first fin extending from a substrate, the substrate including silicon, the first fin including silicon germanium; forming an isolation region around the first fin, an oxide layer being formed on the first fin during formation of the isolation region; removing the oxide layer from the first fin with a hydrogen-based etching process, silicon at a surface of the first fin being terminated with hydrogen after the hydrogen-based etching process; desorbing the hydrogen from the silicon at the surface of the first fin to depassivate the silicon; and exchanging the depassivated silicon at the surface of the first fin with germanium at a subsurface of the first fin.

公开(公告)号：US20210280414A1

公开(公告)日：2021-09-09

申请号：US17329477

申请日：2021-05-25

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Szu-Ying Chen ,  Ya-Wen Chiu ,  Cheng-Po Chau ,  Yi Che Chan ,  Chih Ping Liao ,  YungHao Wang ,  Sen-Hong Syue

IPC: H01L21/02 ,  H01L29/66 ,  H01L21/8234 ,  H01L21/768 ,  H01L21/762

Abstract: Embodiment methods for performing a high pressure anneal process during the formation of a semiconductor device, and embodiment devices therefor, are provided. The high pressure anneal process may be a dry high pressure anneal process in which a pressurized environment of the anneal includes one or more process gases. The high pressure anneal process may be a wet anneal process in which a pressurized environment of the anneal includes steam.

公开(公告)号：US20210202255A1

公开(公告)日：2021-07-01

申请号：US17201073

申请日：2021-03-15

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hongfa Luan ,  Yi-Fan Chen ,  Chun-Yen Peng ,  Cheng-Po Chau ,  Wen-Yu Ku ,  Huicheng Chang

IPC: H01L21/28 ,  H01L29/78 ,  H01L29/66 ,  H01L21/225 ,  H01L29/51 ,  H01L21/306 ,  H01L21/3105 ,  H01L21/8234 ,  H01L29/08 ,  H01L29/40 ,  H01L29/423

Abstract: Embodiment described herein provide a thermal treatment process following a high-pressure anneal process to keep hydrogen at an interface between a channel region and a gate dielectric layer in a field effect transistor while removing hydrogen from the bulk portion of the gate dielectric layer. The thermal treatment process can reduce the amount of threshold voltage shift caused by a high-pressure anneal. The high-pressure anneal and the thermal treatment process may be performed any time after formation of the gate dielectric layer, thus, causing no disruption to the existing process flow.

公开(公告)号：US20200013623A1

公开(公告)日：2020-01-09

申请号：US16568585

申请日：2019-09-12

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hongfa Luan ,  Yi-Fan Chen ,  Chun-Yen Peng ,  Cheng-Po Chau ,  Wen-Yu Ku ,  Huicheng Chang

IPC: H01L21/28 ,  H01L29/51 ,  H01L29/423 ,  H01L29/78 ,  H01L29/66 ,  H01L21/8234 ,  H01L29/40 ,  H01L29/08 ,  H01L21/306 ,  H01L21/3105

Abstract: Embodiment described herein provide a thermal treatment process following a high-pressure anneal process to keep hydrogen at an interface between a channel region and a gate dielectric layer in a field effect transistor while removing hydrogen from the bulk portion of the gate dielectric layer. The thermal treatment process can reduce the amount of threshold voltage shift caused by a high-pressure anneal. The high-pressure anneal and the thermal treatment process may be performed any time after formation of the gate dielectric layer, thus, causing no disruption to the existing process flow.