公开(公告)号：US11705470B2

公开(公告)日：2023-07-18

申请号：US17219960

申请日：2021-04-01

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Sheng-Chan Li ,  Cheng-Hsien Chou ,  Cheng-Yuan Tsai ,  Keng-Yu Chou ,  Yeur-Luen Tu

IPC: H01L27/146

CPC classification number: H01L27/14629 ,  H01L27/14607

Abstract: The present disclosure, in some embodiments, relates to an integrated chip. The integrated chip includes a photodetector arranged within a substrate. The substrate has surfaces defining one or more protrusions arranged along a first side of the substrate over the photodetector. One or more isolation structures are arranged within one or more trenches defined by sidewalls of the substrate arranged on opposing sides of the photodetector. The one or more trenches extend from the first side of the substrate to within the substrate. The one or more isolation structures respectively include a reflective medium configured to reflect electromagnetic radiation.

公开(公告)号：US11211419B2

公开(公告)日：2021-12-28

申请号：US16521876

申请日：2019-07-25

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wei Chuang Wu ,  Dun-Nian Yaung ,  Feng-Chi Hung ,  Jen-Cheng Liu ,  Jhy-Jyi Sze ,  Keng-Yu Chou ,  Yen-Ting Chiang ,  Ming-Hsien Yang ,  Chun-Yuan Chen

IPC: H01L27/146

Abstract: Various embodiments of the present application are directed towards image sensors including composite backside illuminated (CBSI) structures to enhance performance. In some embodiments, a first trench isolation structure extends into a backside of a substrate to a first depth and comprises a pair of first trench isolation segments. A photodetector is in the substrate, between and bordering the first trench isolation segments. A second trench isolation structure is between the first trench isolation segments and extends into the backside of the substrate to a second depth less than the first depth. The second trench isolation structure comprises a pair of second trench isolation segments. An absorption enhancement structure overlies the photodetector, between the second trench isolation segments, and is recessed into the backside of the semiconductor substrate. The absorption enhancement structure and the second trench isolation structure collectively define a CBSI structure.

公开(公告)号：US10991740B2

公开(公告)日：2021-04-27

申请号：US16837351

申请日：2020-04-01

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Cheng Yu Huang ,  Chun-Hao Chuang ,  Chien-Hsien Tseng ,  Kazuaki Hashimoto ,  Keng-Yu Chou ,  Wei-Chieh Chiang ,  Wen-Hau Wu

IPC: H01L27/146

Abstract: Various embodiments of the present application are directed to a narrow band filter with high transmission and an image sensor comprising the narrow band filter. In some embodiments, the filter comprises a first distributed Bragg reflector (DBR), a second DBR, a defect layer between the first and second DBRs, and a plurality of columnar structures. The columnar structures extend through the defect layer and have a refractive index different than a refractive index of the defect layer. The first and second DBRs define a low transmission band, and the defect layer defines a high transmission band dividing the low transmission band. The columnar structures shift the high transmission band towards lower or higher wavelengths depending upon a refractive index of the columnar structures and a fill factor of the columnar structures.

公开(公告)号：US10672812B2

公开(公告)日：2020-06-02

申请号：US16505487

申请日：2019-07-08

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Wei-Chieh Chiang ,  Keng-Yu Chou ,  Chun-Hao Chuang ,  Chien-Hsien Tseng ,  Kazuaki Hashimoto

IPC: H01L27/146 ,  H04N9/04 ,  H04N5/369

Abstract: An image sensor includes a color filter array and a light receiving element. The color filter array includes plural repeating unit cells including first, second, and third unit cells. The first and second unit cells are adjacent to each other in a first direction, the second and third unit cells are adjacent to each other in a second direction transverse to the first direction. Each of the first, second, and third unit cells includes at least one first yellow filter configured to transmit a green component and a red component of incident light, and each of the first, second, and third unit cells does not comprise a red filter configured to transmit the red component of the incident light. The light receiving element is configured to convert the incident light transmitted by the color filter array into electric signals.

公开(公告)号：US10651225B2

公开(公告)日：2020-05-12

申请号：US16163908

申请日：2018-10-18

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Cheng Yu Huang ,  Chun-Hao Chuang ,  Chien-Hsien Tseng ,  Kazuaki Hashimoto ,  Keng-Yu Chou ,  Wei-Chieh Chiang ,  Wen-Hau Wu

IPC: H01L27/146 ,  H01L23/552 ,  H01L25/04 ,  H01L23/64

Abstract: In some embodiments, the present disclosure relates to a three-dimensional integrated chip. The three-dimensional integrated chip includes a first integrated chip (IC) die and a second IC die. The first IC die has a first image sensor element configured to generate electrical signals from electromagnetic radiation within a first range of wavelengths. The second IC die has a second image sensor element configured to generate electrical signals from electromagnetic radiation within a second range of wavelengths that is different than the first range of wavelengths. A first band-pass filter is arranged between the first IC die and the second IC die and is configured to reflect electromagnetic radiation that is within the first range of wavelengths.

公开(公告)号：US20200098813A1

公开(公告)日：2020-03-26

申请号：US16416583

申请日：2019-05-20

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Cheng Yu Huang ,  Chun-Hao Chuang ,  Chien-Hsien Tseng ,  Kazuaki Hashimoto ,  Keng-Yu Chou ,  Wei-Chieh Chiang ,  Wen-Chien Yu ,  Ting-Cheng Chang ,  Wen-Hau Wu ,  Chih-Kung Chang

IPC: H01L27/146

Abstract: In some embodiments, an image sensor is provided. The image sensor includes a photodetector disposed in a semiconductor substrate. A wave guide filter having a substantially planar upper surface is disposed over the photodetector. The wave guide filter includes a light filter disposed in a light filter grid structure. The light filter includes a first material that is translucent and has a first refractive index. The light filter grid structure includes a second material that is translucent and has a second refractive index less than the first refractive index.

公开(公告)号：US20200058684A1

公开(公告)日：2020-02-20

申请号：US16521876

申请日：2019-07-25

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wei Chuang Wu ,  Dun-Nian Yaung ,  Feng-Chi Hung ,  Jen-Cheng Liu ,  Jhy-Jyi Sze ,  Keng-Yu Chou ,  Yen-Ting Chiang ,  Ming-Hsien Yang ,  Chun-Yuan Chen

IPC: H01L27/146

Abstract: Various embodiments of the present application are directed towards image sensors including composite backside illuminated (CBSI) structures to enhance performance. In some embodiments, a first trench isolation structure extends into a backside of a substrate to a first depth and comprises a pair of first trench isolation segments. A photodetector is in the substrate, between and bordering the first trench isolation segments. A second trench isolation structure is between the first trench isolation segments and extends into the backside of the substrate to a second depth less than the first depth. The second trench isolation structure comprises a pair of second trench isolation segments. An absorption enhancement structure overlies the photodetector, between the second trench isolation segments, and is recessed into the backside of the semiconductor substrate. The absorption enhancement structure and the second trench isolation structure collectively define a CBSI structure.

公开(公告)号：US10347675B2

公开(公告)日：2019-07-09

申请号：US15596085

申请日：2017-05-16

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Wei-Chieh Chiang ,  Keng-Yu Chou ,  Chun-Hao Chuang ,  Chien-Hsien Tseng ,  Kazuaki Hashimoto

IPC: H01L27/146 ,  H04N9/04 ,  H04N5/374

Abstract: An image sensor includes a color filter array and a light receiving element. The color filter array includes plural repeating unit cells, and at least one of the unit cells includes at least a yellow filter, at least one green filter, and at least one blue filter. The yellow filter is configured to transmit a green component and a red component of incident light. The green filter is configured to transmit the green component of the incident light. The blue filter is configured to transmit a blue component of the incident light. Each of the unit cells does not comprise a red filter configured to transmit the red component of the incident light. The light receiving element is configured to convert the incident light transmitted by the color filter array into electric signals.

公开(公告)号：US10002899B2

公开(公告)日：2018-06-19

申请号：US14855429

申请日：2015-09-16

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Keng-Yu Chou ,  Chien-Hsien Tseng ,  Wei-Chieh Chiang ,  Wen-I Hsu ,  Yuichiro Yamashita

IPC: H01L27/146 ,  H04N5/232

CPC classification number: H01L27/14627 ,  H01L27/14605 ,  H01L27/14607 ,  H01L27/14621 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14645 ,  H01L27/14685 ,  H01L27/14698 ,  H04N5/23212 ,  H04N5/3696

Abstract: An image sensor for high angular response discrimination is provided. A plurality of pixels comprises a phase detection autofocus (PDAF) pixel and an image capture pixel. Pixel sensors of the pixels are arranged in a semiconductor substrate. A grid structure is arranged over the semiconductor substrate, laterally surrounding color filters of the pixels. Microlenses of the pixels are arranged over the grid structure, and comprise a PDAF microlens of the PDAF pixel and an image capture microlens of the image capture pixel. The PDAF microlens comprises a larger optical power than the image capture microlens, or comprises a location or shape so a PDAF receiving surface of the PDAF pixel has an asymmetric profile. A method for manufacturing the image sensor is also provided.

公开(公告)号：US09929198B2

公开(公告)日：2018-03-27

申请号：US14505340

申请日：2014-10-02

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Keng-Yu Chou ,  Kazuaki Hashimoto ,  Jen-Cheng Liu ,  Jhy-Jyi Sze ,  Wei-Chieh Chiang ,  Pao-Tung Chen

IPC: H01L27/146 ,  H04N5/225 ,  H04N5/33

CPC classification number: H01L27/14621 ,  H01L27/1462 ,  H01L27/14627 ,  H01L27/14649 ,  H01L27/14685 ,  H04N5/2257 ,  H04N5/332

Abstract: An image sensor includes a substrate, dual-waveband photosensitive devices, at least one infrared photosensitive device, a transparent dielectric layer, at least one infrared band-pass filter, a color filter layer and a micro-lens layer. The dual-waveband photosensitive devices are disposed in the substrate, and each dual-waveband photosensitive device is configured to sense an infrared light and one visible light. The infrared photosensitive device is disposed in the substrate, in which the dual-waveband photosensitive devices and the infrared photosensitive device are arranged in an array. The transparent dielectric layer is disposed over the dual-waveband photosensitive devices and the infrared photosensitive device. The infrared band-pass filter is disposed in the transparent dielectric layer and corresponds to the infrared photosensitive device. The color filter layer is disposed to cover the transparent dielectric layer and the infrared band-pass filter. The micro-lens layer is disposed on the color filter layer.