Lithography device and apparatus and method for lithography device

    公开(公告)号:US10088761B1

    公开(公告)日:2018-10-02

    申请号:US15471170

    申请日:2017-03-28

    IPC分类号: G03B27/52 G03B27/62 G03F7/20

    摘要: An apparatus for a lithography device is provided, which includes a laser-based particle eliminating component and a particle collector. The laser-based particle eliminating component includes a laser emitter and a laser absorbing member. The laser emitter is configured to emit laser beams for irradiating particles in a space near a photomask of the lithography device. The laser absorbing member is disposed opposite to the laser emitter for absorbing the laser beams. The particle collector is configured for collecting the irradiated particles.

    System and method of cleaning FOUP
    23.
    发明授权
    System and method of cleaning FOUP 有权
    FOUP清洗系统及方法

    公开(公告)号:US09579697B2

    公开(公告)日:2017-02-28

    申请号:US13706403

    申请日:2012-12-06

    摘要: A system for cleaning a container such as semiconductor wafer carrier includes a housing, a cleaning unit in the housing, an analyzing unit within the housing, and a vacuum unit within the housing. The cleaning unit comprises a cleaning chamber, and is configured to spray a cleaning medium into the container in the cleaning chamber and dry the container. The analyzing unit is configured to analyze air inside the container coming out of the cleaning chamber, and provide a testing result for each ingredient of possible airborne molecular contamination (AMC) and humidity. The vacuum unit comprises a vacuum chamber configured to apply vacuum onto a container when the testing result for an ingredient is higher than a respective threshold.

    摘要翻译: 用于清洁诸如半导体晶片载体的容器的系统包括壳体,壳体中的清洁单元,壳体内的分析单元以及壳体内的真空单元。 清洁单元包括清洁室,并且构造成将清洁介质喷射到清洁室中的容器中并干燥容器。 分析单元被配置为分析来自清洁室的容器内的空气,并且为每种可能的空气分子污染(AMC)和湿度的成分提供测试结果。 真空单元包括真空室,其构造成当成分的测试结果高于相应的阈值时将真空施加到容器上。

    SYSTEM AND METHOD OF CLEANING FOUP
    24.
    发明申请
    SYSTEM AND METHOD OF CLEANING FOUP 有权
    清洗FOUP的系统和方法

    公开(公告)号:US20140158172A1

    公开(公告)日:2014-06-12

    申请号:US13706403

    申请日:2012-12-06

    IPC分类号: B08B9/46

    摘要: A system for cleaning a container such as semiconductor wafer carrier includes a housing, a cleaning unit in the housing, an analyzing unit within the housing, and a vacuum unit within the housing. The cleaning unit comprises a cleaning chamber, and is configured to spray a cleaning medium into the container in the cleaning chamber and dry the container. The analyzing unit is configured to analyze air inside the container coming out of the cleaning chamber, and provide a testing result for each ingredient of possible airborne molecular contamination (AMC) and humidity. The vacuum unit comprises a vacuum chamber configured to apply vacuum onto a container when the testing result for an ingredient is higher than a respective threshold.

    摘要翻译: 用于清洁诸如半导体晶片载体的容器的系统包括壳体,壳体中的清洁单元,壳体内的分析单元以及壳体内的真空单元。 清洁单元包括清洁室,并且构造成将清洁介质喷射到清洁室中的容器中并干燥容器。 分析单元被配置为分析来自清洁室的容器内的空气,并且为每种可能的空气分子污染(AMC)和湿度的成分提供测试结果。 真空单元包括真空室,其构造成当成分的测试结果高于相应的阈值时将真空施加到容器上。

    Wafer pod handling method
    26.
    发明授权

    公开(公告)号:US10978329B2

    公开(公告)日:2021-04-13

    申请号:US16677626

    申请日:2019-11-07

    IPC分类号: H01L21/677

    摘要: A method for wafer pod handling includes at least the following steps. A wafer pod is moved into a load chamber by conveying the wafer pod to the load chamber via one side of a track and removing a cover of the load chamber via an opposing side of the track. The wafer pod that is inside the load chamber is coupled to a port of a platform that is linked to the load chamber. A wafer to be processed is moved from the wafer pod and out of the load chamber to the platform for performing a semiconductor process. Other methods for wafer pod handling are also provided.

    METHOD OF PATTERNING MATERIAL LAYER

    公开(公告)号:US20210035804A1

    公开(公告)日:2021-02-04

    申请号:US16931459

    申请日:2020-07-17

    IPC分类号: H01L21/033 H01L21/3213

    摘要: A method of patterning a material layer includes the following steps. A first material layer is formed over a substrate, and the first material layer includes a first metal compound. Through a first photomask, portions of the first material layer is exposed with a gamma ray, wherein a first metal ion of the first metal compound in the portions of the first material layer is chemically reduced to a first metal grain. Other portions of the first material layer are removed to form a plurality of first hard mask patterns including the first metal grain.

    PHOTOMASK AND METHOD OF FORMING THE SAME
    29.
    发明申请

    公开(公告)号:US20180284602A1

    公开(公告)日:2018-10-04

    申请号:US15471151

    申请日:2017-03-28

    摘要: A method for forming a photomask includes the following steps. A substrate is provided, which has a pattern region and a peripheral region surrounding the pattern region. A first etching operation is performed on a first surface of the substrate to remove first portions of the substrate in the pattern region, so as to form recesses in the pattern region of the substrate. A blasting operation is performed on the first surface of the substrate. A BARC layer is formed filling the recesses and over the first surface of the substrate. A second etching operation is performed on a second surface of the substrate opposite to the first surface until portions of the BARC layer in the recesses are exposed. The BARC layer is removed after the second etching operation, so as to form openings in the substrate in the pattern region.