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公开(公告)号：US20050048604A1
公开(公告)日：2005-03-03
申请号：US10485395
申请日：2002-08-01
IPC分类号： C12N15/09 , C12N1/15 , C12N1/19 , C12N1/21 , C12N5/10 , C12N9/10 , C12P19/26 , C12P19/28 , C12Q1/68 , C07H21/04
CPC分类号： C12N9/1051 , C12P19/26
摘要： A vector of the present invention has DNA encoding a protein or a product having the same effect as the protein, the protein containing an amino acid sequence from amino acid numbers 47 to 802 in SEQ. ID. NO:2. Expression of the DNA gives human chondroitin synthase. By using human chondroitin synthase, it is possible to produce a saccharide chain having a repeating disaccharide unit of chondroitin. The DNA or part thereof may be used as a probe for hybridization for the human chondroitin synthase.
摘要翻译： 本发明的载体具有编码蛋白质或具有与蛋白质相同效果的产物的DNA，该蛋白质含有SEQ ID NO：47至802的氨基酸序列。 ID。 NO：2。 DNA的表达给人软骨素合成酶。 通过使用人软骨素合成酶，可以生成具有软骨素重复二糖单元的糖链。 DNA或其部分可以用作人类软骨素合酶杂交的探针。
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公开(公告)号：US06841879B2
公开(公告)日：2005-01-11
申请号：US09970771
申请日：2001-10-05
IPC分类号： H01L21/28 , H01L21/336 , H01L29/45 , H01L29/78 , H01L23/48
CPC分类号： H01L29/66659 , H01L29/456 , H01L29/665 , H01L29/7835
摘要： A field-effect transistor including N−-extension regions, an N+-drain region, an N+-source region and a gate electrode at a surface of a silicon substrate. A sidewall insulating film on one of the side surfaces of the gate electrode partially covers the surface of the N−-extension region, and a sidewall insulating film on the other side surface entirely covers the N−-extension region. Further, a silicon oxide film covers the surface of N−-extension region not covered by the sidewall insulating film. Thereby, resistances of the gate electrode, source region, and drain region can be easily reduced in a transistor having extension regions, which are asymmetrical with respect to the gate electrode.
摘要翻译： 在硅衬底的表面具有N + - 延伸区域，N + - 漏极区域，N + - 源区域和栅电极的场效应晶体管。 栅电极的一个侧表面上的侧壁绝缘膜部分地覆盖N' - 延伸区域的表面，另一侧表面上的侧壁绝缘膜完全覆盖N' - 延伸区域。 此外，氧化硅膜覆盖未被侧壁绝缘膜覆盖的N - 延伸区域的表面。 因此，在具有相对于栅电极不对称的延伸区域的晶体管中，可以容易地减小栅电极，源极区和漏极区的电阻。
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23.发明授权Process for producing single crystal semiconductor layer and semiconductor device produced by said process 失效通过所述方法制造单晶半导体层和半导体器件的制造方法
公开(公告)号：US5371381A
公开(公告)日：1994-12-06
申请号：US587500
申请日：1990-09-24
IPC分类号： H01L21/20 , H01L21/268 , H01L21/822 , H01L29/04 , H01L27/04
CPC分类号： H01L21/8221 , H01L21/2026 , H01L21/268 , H01L29/045 , Y10S117/904 , Y10S148/09 , Y10S148/091 , Y10S148/093
摘要： Disclosed herein is a process for producing a single crystal layer of a semiconductor device, which comprises the steps of providing an oxide insulator layer separated by an opening part for seeding, on a major surface of a single crystal semiconductor substrate of the cubic system, providing a polycrystalline or amorphous semiconductor layer on the entire surface of the insulator layer inclusive of the opening part, then providing a protective layer comprising at least a reflective or anti-reflection film comprising stripes of a predetermined width, in a predetermined direction relative to the opening part and at a predetermined interval, the protective layer capable of controlling the temperature distributions in the semiconductor layer at the parts corresponding to the stripes or the parts not corresponding to the stripes, thereby completing a base for producing a semiconductor device, thereafter the surface of the base is irradiated with an energy beam through the striped reflective or anti-reflection film to melt the polycrystalline or amorphous semiconductor and scanning the energy beam in a predetermined direction such that the direction of the crystal of the semiconductor re-solidified and converted into a single crystal accords with a {111} plane, to produce the single crystal of the semiconductor device. Also disclosed is a semiconductor device produced by the method, which comprises a single crystal layer having a wide range of a crystal in a predetermined direction relative to the facial orientation of the major surface of the substrate, and has a three-dimensional semiconductor circuit element construction.
摘要翻译： 本发明公开了一种制造半导体器件的单晶层的方法，其包括以下步骤：在立方晶系的单晶半导体衬底的主表面上提供由用于接种的开口部分开的氧化物绝缘体层，提供 在包括开口部分的绝缘体层的整个表面上的多晶或非晶半导体层，然后提供保护层，该保护层至少包括反射膜或防反射膜，该反射膜或防反射膜包含预定宽度的条，相对于开口 部分并且以预定间隔，保护层能够控制对应于条纹的部分或不对应于条纹的部分的半导体层中的温度分布，从而完成用于制造半导体器件的基底，之后， 通过条纹反射照射能量束 e或抗反射膜，以熔化多晶或非晶半导体并沿预定方向扫描能量束，使得半导体晶体的方向重新固化并转换成单晶符合{111}面，至 产生半导体器件的单晶。 还公开了一种通过该方法制造的半导体器件，该半导体器件包括相对于衬底的主表面的面取向在预定方向上具有宽范围的晶体的单晶层，并且具有三维半导体电路元件 施工。
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公开(公告)号：US5070030A
公开(公告)日：1991-12-03
申请号：US606828
申请日：1990-10-31
IPC分类号： H01L21/285 , H01L21/331 , H01L29/73
CPC分类号： H01L29/7317 , H01L21/28525 , Y10S148/011
摘要： Disclosed herein is a bipolar transistor and a method of manufacturing the same. The present invention provides a bipolar transistor in which a collector layer, a base layer and an emitter layer are transversely arranged in sequence through a monocrystal silicon layer formed on an insulation layer of a semiconductor substrate and a method of manufacturing the same. According to the present invention, parasitic capacity between a base and a collector can be reduced and p-n junction capacity between the collector and the substrate can be removed, thereby to achieve high-speed operation.
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公开(公告)号：US4787740A
公开(公告)日：1988-11-29
申请号：US11329
申请日：1987-02-05
CPC分类号： G01N21/65 , G01N2021/656 , G01N2021/8477 , G01N21/21 , G01N21/658
摘要： An apparatus for determining crystal orientation comprises: a polarizer for polarizing an incident light beam; a polarization analyzer for selecting light having a selected polarization direction in Raman scattered light; and a synchronizer for enabling synchronous rotations of the polarizer and the polarization analyzer.
摘要翻译： 一种用于确定晶体取向的装置包括：用于偏振入射光束的偏振器; 偏振分析器，用于选择拉曼散射光中具有所选偏振方向的光; 以及用于实现偏振器和偏振分析器的同步旋转的同步器。
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26.发明授权Zone melting apparatus for monocrystallizing semiconductor layer on insulator layer 失效绝缘体层上半导体层单晶区域熔融装置
公开(公告)号：US4694143A
公开(公告)日：1987-09-15
申请号：US815069
申请日：1985-12-31
CPC分类号： C30B13/28 , H05B3/0047
摘要： A zone melting apparatus, in accordance with the present invention for monocrystallizing a semiconductor layer in a layered substance, includes: an upper elongated heater for zone melting of the semiconductor layer, the upper heater being disposed above and parallel to the semiconductor layer; a plurality of lower elongated heaters for heating the whole layered substance, the lower heaters being disposed in a plane below and parallel to the layered substance and the axis of each of the lower heaters being substantially perpendicular to the axis of the upper heater; a plurality of power suppliers for supplying electric power to the lower heaters; one or more temperature sensors for estimating the temperature of the layered substance; and a controller for controlling the power suppliers in response to the output of the temperature sensor(s), the controller making control so that the temperature of the central portion of the layered substance is slightly lower than that of the outer portions thereof.
摘要翻译： 根据本发明的用于使层状物质中的半导体层单晶化的区域熔化装置包括：用于半导体层的区域熔化的上部细长加热器，上部加热器设置在半导体层的上方并平行; 多个下部细长加热器，用于加热整个层状物质，下部加热器设置在层叠物质下方并平行的平面中，并且每个下部加热器的轴线基本上垂直于上部加热器的轴线; 用于向下部加热器供电的多个供电装置; 用于估计分层物质的温度的一个或多个温度传感器; 以及控制器，用于响应于温度传感器的输出来控制供电器，控制器进行控制，使得层状物质的中心部分的温度略低于其外部部分的温度。
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27.发明授权Chondroitin synthase, method for producing the same and method for producing saccharide chain-extended chondroitin 失效软骨素合成酶，其生产方法和生产糖链延长软骨素的方法公开(公告)号：US07947481B2
公开(公告)日：2011-05-24
申请号：US12010856
申请日：2008-01-30
CPC分类号： C12N9/1051 , C12P19/26
摘要： A vector of the present invention has DNA encoding a protein or a product having the same effect as the protein, the protein containing an amino acid sequence from amino acid numbers 47 to 802 in SEQ. ID. NO:2. Expression of the DNA gives human chondroitin synthase. By using human chondroitin synthase, it is possible to produce a saccharide chain having a repeating disaccharide unit of chondroitin. The DNA or part thereof may be used as a probe for hybridization for the human chondroitin synthase.
摘要翻译： 本发明的载体具有编码蛋白质或具有与蛋白质相同效果的产物的DNA，该蛋白质含有SEQ ID NO：47至802的氨基酸序列。 ID。 NO：2。 DNA的表达给人软骨素合成酶。 通过使用人软骨素合成酶，可以生成具有软骨素重复二糖单元的糖链。 DNA或其部分可以用作人类软骨素合酶杂交的探针。
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28.发明授权Method for producing a semiconductor device including crystallizing an amphorous semiconductor film 失效一种半导体器件的制造方法，包括使两相半导体膜结晶化公开(公告)号：US07553778B2
公开(公告)日：2009-06-30
申请号：US11356288
申请日：2006-02-17
IPC分类号： H01L21/00
CPC分类号： H01L21/02686 , H01L21/02422 , H01L21/02691 , H01L21/2026 , H01L27/1285 , H01L27/1296
摘要： A method for producing a semiconductor device includes irradiating an amorphous semiconductor film on an insulating material with a pulsed laser beam having a rectangular irradiation area, while scanning in a direction intersecting a longitudinal direction of the irradiation area, thereby forming a first polycrystalline semiconductor film, and irradiating a part of the amorphous semiconductor film with the laser beam, while scanning in a longitudinal direction intersecting the irradiation area, the part superposing the first polycrystalline semiconductor film and being adjacent to the first polycrystalline semiconductor film, thereby forming a second polycrystalline semiconductor film. The laser beam has a wavelength in a range from 390 nm to 640 nm, and the amorphous semiconductor film has a thickness in a range from 60 nm to 100 nm.
摘要翻译： 一种制造半导体器件的方法包括：在具有矩形照射区域的脉冲激光束的绝缘材料上照射非晶半导体膜，同时沿与照射区域的纵向相交的方向扫描，从而形成第一多晶半导体膜， 以及在与所述照射区域交叉的纵向方向上扫描所述非晶半导体膜的一部分，所述半导体膜与所述第一多晶半导体膜重叠，并且与所述第一多晶半导体膜相邻，从而形成第二多晶半导体膜 。 激光束的波长为390nm〜640nm，非晶半导体膜的厚度为60nm〜100nm。
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公开(公告)号：US20060183304A1
公开(公告)日：2006-08-17
申请号：US11356288
申请日：2006-02-17
CPC分类号： H01L21/02686 , H01L21/02422 , H01L21/02691 , H01L21/2026 , H01L27/1285 , H01L27/1296
摘要： A method for producing a semiconductor device includes irradiating an amorphous semiconductor film on an insulating material with a pulsed laser beam having a rectangular irradiation area, while scanning in a direction intersecting a longitudinal direction of the irradiation area, thereby forming a first polycrystalline semiconductor film, and irradiating a part of the amorphous semiconductor film with the laser beam, while scanning in a longitudinal direction intersecting the irradiation area, the part superposing the first polycrystalline semiconductor film and being adjacent to the first polycrystalline semiconductor film, thereby forming a second polycrystalline semiconductor film. The laser beam has a wavelength in a range from 390 nm to 640 nm, and the amorphous semiconductor film has a thickness in a range from 60 nm to 100 nm.
摘要翻译： 一种制造半导体器件的方法包括：在具有矩形照射区域的脉冲激光束的绝缘材料上照射非晶半导体膜，同时沿与照射区域的纵向相交的方向扫描，从而形成第一多晶半导体膜， 以及在与所述照射区域交叉的纵向方向上扫描所述非晶半导体膜的一部分，所述半导体膜与所述第一多晶半导体膜重叠，并且与所述第一多晶半导体膜相邻，从而形成第二多晶半导体膜 。 激光束的波长为390nm〜640nm，非晶半导体膜的厚度为60nm〜100nm。
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公开(公告)号：US5094714A
公开(公告)日：1992-03-10
申请号：US607800
申请日：1990-10-31
IPC分类号： H01L21/20 , C30B13/00 , H01L21/762
CPC分类号： C30B29/06 , C30B13/00 , H01L21/76297 , Y10T428/31504
摘要： A wafer structure for forming a semiconductor single crystal film comprises a semiconductor single crystal substrate, a plurality of recesses formed in a grooved shape to one main surface of the semiconductor single crystal substrate, insulation material embedded to the inside of these recesses, an insulation layer deposited over the insulation material and the semiconductor single crystal substrate and integrated with the insulation material and a polycrystalline or amorphous semiconductor layer to be recrystallized disposed over the insulation layer.A wafer structure with no or less grain boundaries can be obtained. Further, polycrystalline or amorphous semiconductor layer can be prevented from peeling off the substrate by the additional layering of a protecting insulation layer.
摘要翻译： 用于形成半导体单晶膜的晶片结构包括半导体单晶衬底，形成为半导体单晶衬底的一个主表面的沟槽形状的多个凹槽，嵌入到这些凹部内部的绝缘材料，绝缘层 沉积在绝缘材料和半导体单晶衬底上并与绝缘材料一体化，并且将多晶或非晶半导体层重结晶设置在绝缘层上。 可以获得没有或没有晶界的晶片结构。 此外，通过附加的保护绝缘层的分层，可以防止多晶或非晶半导体层从基板上剥离。
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